Sujet de thèse :

« Characterization and modeling of GaN devices dedicated to power electronics for the design of converters »

The constant growth in electric consumption leads to significant advances in power conversion. Recent studies have shown that the use of Gallium Nitride (GaN) as a technological building bloc enables the development of converters operating at high frequency with reduced volume and weight. Therefore, characterization of GaN power devices is required to provide accurate models over a wide frequency range in order to design new generations of converters. A model of GaN based power transistors (HEMT) has been developed. Meanwhile, the demand concerning GaN diodes is increasing, pushing forward the need of a dedicated electric model.

Thereby, my role as a PhD student is to develop, through S-parameters, current-voltage and current-collapse measurements, an innovative modelling method for GaN power diodes.