III-V semiconductors (arsenides, phosphides, antimonides)

III-V semiconductors (arsenides, phosphides, antimonides)

Materials
Wafer scale epitaxy : GaAs, AlAs, GaInAs, InAlAs, GaAlAs, InP, GaP, GaInP, InAlP, GaSb, InSb, AlSb, GaInSb, InAlSb  Ternaries AsP et AsSb, GaInAsP, InAlAsSb
Selective Area Epitaxy : InAs, InSb, InP, GaInAs, GaSb, GaAsSb, GaAs

Synthesis
MBE C21 Riber – 3’‘ wafers – 2’‘ homogeneity – UHV – 350 to 650°C

Mastering
Complete for wafer scale epitaxy
Partial for Selective Area Epitaxy

Applications
HF electronics (HEMTs, TFETs, HBTs)
Optoelectronics (UTC PDs, thermionicdiodes)
THz (High speed photodetectors, IR modulators)
Ballistic transport, spin orbitronics, quantum simulators

Characterisation
Raman, µPL, DRX, XPS, Hall Effect, SEM,  SIMS, AFM, FIB STEM

Partnership
Riber, C2N, LETI, MIT, IMEC, NEEL, CINTRA, IAF, TU Berlin, IAF, INSP, Renatech, …

Semiconducting nanocrystals and molecular networks

Semiconducting nanocrystals and molecular networks

Materials
Silicene, Germanene, CdSe/CdS, PbSe

Synthesis
Vapor Phase Deposition under UHV from – 160 to 400°C
Chemical synthesis based on organometallics under UHV or in liquid phase from 100 to 250°C

Mastering
Exploratory

Applications
Photodetection, optical emitters, high electron mobility, (electro)luminescence

Characterisation
STM, optical spectroscopy,  SEM

Partnership
Horiba, STMicroelectronics

Polysilicon

Polysilicon

Synthesis
LPCVD using SiH4– Tempress tubular furnace from 580 to 700°C – Pressure from 100 to 300mTorr
Up to 25 x 2,3 or 4 inch wafers

Mastering
Partial

Applications
Electrodes, SOI

Characterisation
Ellipsometry,  SEM

Partnership
Vmicro