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  GROUPE DE RECHERCHE : EPIPHY

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EPIPHY GROUP : Publications

2019

Articles

    1. Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy
      PASTOREK M., OLIVIER A., LECHAUX Y., WICHMANN N., KARATSORI T., FAHED M., BUCAMP A., ADDAD A., TROADEC D., GHIBAUDO G., DESPLANQUE L., WALLART X., BOLLAERT S.
      Nanotechnology 30 (2019) 035301
      doi: 10.1088/1361-6528/aaebbd
    2. Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE
      BUCAMP A., COINON C., CODRON J.L., TROADEC D., WALLART X., DESPLANQUE L.
      J. Cryst. Growth 512 (2019) 11-15
      doi: 10.1016/j.jcrysgro.2019.01.033
    3. Heat treatment of commercial polydimethylsiloxane PDMS precursors: Part I. Towards conversion of patternable soft gels into hard ceramics
      VENKATACHALAM S., HOURLIER D.
      Ceram. Int. 45 (2019) 6255-6262
      doi: 10.1016/j.ceramint.2018.12.106
    4. Heat treatment of commercial polydimethylsiloxane PDMS precursors: Part II. Thermal properties of carbon-based ceramic nanocomposites VENKATACHALAM S., LENFANT S., DEPRIESTER M., SAHRAOUI A.H., HOURLIER D
      Ceram. Int. (2019) (in press)
      doi: 10.1016/j.ceramint.2019.07.143
    5. Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls
      DIAZ ALVAREZ A., PERIC N., FRANCHINA VERGEL N.A., NYS J.P., BERTHE M., PATRIARCHE G., HARMAND J.C., CAROFF P., PLISSARD S., EBERT P., XU T., GRANDIDIER B
      Nanotechnology 30 (2019) 324002
      doi: 10.1088/1361-6528/ab1a4e
    6. InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation current
      BILLET M., BRETIN S., BAVEDILA F., AVRAMOVIC V., WALLART X., COINON C., LAMPIN J.F., DUCOURNAU G., PEYTAVIT E.
      Appl. Phys. Lett. 114 (2019) 161104
      doi: 10.1063/1.5092283
    7. Physical mechanisms involved in the formation and operation of memory devices based on a monolayer of gold nanoparticle-polythiophene hybrid materials
      ZHANG T.C., GUERIN D., ALIBART F., TROADEC D., HOURLIER D., PATRIARCHE G., YASSIN A., OÇAFRAIN M., BLANCHARD P., RONCALI J., VUILLAUME D., LMIMOUNI K., LENFANT S.
      Nanoscale Adv. 1 (2019) 2718-2726
      doi: 10.1039/C9NA00285E
    8. Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates
      DESPLANQUE L., BUCAMP A., TROADEC D., PATRIARCHE G., WALLART X.
      J. Cryst. Growth 512 (2019) 6-10
      doi: 10.1016/j.jcrysgro.2019.02.012
    9. Synthesis of T-Nb2O5 thin-films deposited by atomic layer deposition for miniaturized electrochemical energy storage devices
      OUENDI S., ARICO C., BLANCHARD F., CODRON J.L., WALLART X., TABERNA P.L., ROUSSEL P., CLAVIER L., SIMON P., LETHIEN C.
      Energy Storage Mater. 16 (2019) 581-588
      doi: 10.1016/j.ensm.2018.08.022
    10. Thermal decomposition of calcium oxalate: beyond appearances
      HOURLIER D.
      J. Therm. Anal. Calorim. (2019) (available online november 9, 2018 ; in press)
      doi: 10.1007/s10973-018-7888-1
    11. Thermal stability of oleate-stabilized Gd2O2S nanoplates in inert and oxidizing atmospheres
      LARQUET C., HOURLIER D., NGUYEN A.M., TORRES-PARDO A., GAUZZI A., SANCHEZ C., CARENCO S.
      ChemNanoMat (2019) (available online january 18, 2019 ; in press)
      doi: 10.1002/cnma.201800578
    12. Trap-free heterostructure of PbS nanoplatelets on InP(001) by chemical epitaxy
      BIADALA L., PENG W.B., LAMBERT Y., KIM J.H., CANNESON D., HOUPPE A., BERTHE M., TROADEC D., DERESMES D., PATRIARCHE G., XU T., PI X.D., WALLART X., DELERUE C., BAYER M., XU J., GRANDIDIER B.
      ACS Nano 13, 2 (2019) 1961-1967
      doi: 10.1021/acsnano.8b08413
    13. Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III-V semiconductors
      POST L.C., XU T., FRANCHINA VERGEL N.A., TADJINE A., LAMBERT Y., VAURETTE F., YAREKHA D., DESPLANQUE L., STIEVENARD D., WALLART X., GRANDIDIER B., DELERUE C., VANMAEKELBERGH D.
      Nanotechnology 30, 15 (2019) 155301
      doi: 10.1088/1361-6528/aafd3f

Invited talks

    1. Molecular beam epitaxy of single to few layer graphene on (000-1) SiC, growth and electronic properties
      VIGNAUD D., WALLART X., RAZADO-COLAMBO I., AVILA J., ASENSIO M.C.
      PDI Topical Workshop on 2D Materials Grown by MBE, Berlin, Germany, april 8-9, 2019
2018

Articles

    1. Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field
      VIGNEAU F., ZENG Z.P., ESCOFFIER W., CAROFF P., LETURCQ R., NIQUET Y.M., RAQUET B., GOIRAN M.
      Phys. Rev. B 97, 12 (2018) 125308
      doi: 10.1103/PhysRevB.97.125308
    2. In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate
      DESPLANQUE L., BUCAMP A., TROADEC D., PATRIARCHE G., WALLART X.
      Nanotechnology 29, 30 (2018) 305705
      doi: 10.1088/1361-6528/aac321
    3. On the origins of transport inefficiencies in mesoscopic networks
      TOUSSAINT S., MARTINS F., FANIEL S., PALA M.G., DESPLANQUE L., WALLART X., SELLIER H., HUANT S., BAYOT V., HACKENS B.
      Sci. Rep. 8 (2018) 3017
      doi: 10.1038/s41598-018-21250-y
    4. Single-channel 100 Gbit/s transmission using III-V UTC-PDs for future IEEE 802.15.3d wireless links in the 300 GHz band
      CHINNI V.K., LATZEL P., ZEGAOUI M., COINON C., WALLART X., PEYTAVIT E., LAMPIN J.F., ENGENHARDT K., SZRIFTGISER P., ZAKNOUNE M., DUCOURNAU G
      Electron. Lett. 54, 10 (2018) 638-640
      doi: 10.1049/el.2018.0905
    5. Static and low frequency noise characterization of ultra-thin body InAs MOSFETs
      KARATSORI T.A., PASTOREK M., THEODOROU C.G., FADJIE A., WICHMANN N., DESPLANQUE L., WALLART X., BOLLAERT S., DIMITRIADIS C.A., GHIBAUDO G
      Solid-State Electron. 143 (2018) 56-61
      doi: 10.1016/j.sse.2017.12.001
    6. Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction
      RAZADO-COLAMBO I., AVILA J., VIGNAUD D., GODEY S., WALLART X., WOODRUFF D.P., ASENSIO M.C.
      Sci. Rep. 8, 1 (2018) 10190
      doi: 10.1038/s41598-018-28402-0
    7. Transport mechanisms in a puckered graphene-on-lattice
      XU T., DIAZ ALVAREZ A., WEI W., ESCHIMESE D., ELIET S., LANCRY O., GALOPIN E., VAURETTE F., BERTHE M., DERESMES D., WEI B., XU J., LAMPIN J.F., PALLECCHI E., HAPPY H., VIGNAUD D., GRANDIDIER B.
      Nanoscale 10, 16 (2018) 7519-7525
      doi: 10.1039/C8NR00678D
    8. Chemical nature of the anion antisite in dilute phosphide GaAs1-xPx alloy grown at low temperature
      DEMONCHAUX T., SOSSOE K.K., DZAGLI M.M., NYS J.P., BERTHE M., TROADEC D., ADDAD A., VEILLEROT M., PATRIARCHE G., VON BARDELEBEN H.J., SCHNEDLER M., COINON C., LEFEBVRE I., MOHOU M.A., STIEVENARD D., LAMPIN J.F., EBERT P., WALLART X., GRANDIDIER B.
      Phys. Rev. Mater. 2, 10 (2018) 104601
      doi: 10.1103/PhysRevMaterials.2.104601
    9. Two-dimensional Rutherford-like scattering in ballistic nanodevices
      TOUSSAINT S., BRUN B., FANIEL S., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B.
      Phys. Rev. B 98, 7 (2018) 075310
      doi: 10.1103/PhysRevB.98.075310
    10. Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process
      LECHAUX Y., FADJIE-DJOMKAM A.B., PASTOREK M., WALLART X., BOLLAERT S., WICHMANN N.
      J. Appl. Phys. 124, 17 (2018) 175302
      doi: 10.1063/1.5049571

Invited talks

    1. Mesures de flux in-situ en temps réel en épitaxie par jets moléculaire par spectrocopie d’absorption atomique modulée en longueur d’onde: application à des mesures de flux de gallium
      VIGNAUD D.
      Atelier du GDR PULSE « Mesures in-situ pour le contrôle de la croissance épitaxiale », Toulouse, France, 1-3 octobre, 2018
      https://epicaracinsitu.sciencesconf.org/data/pages/PULSE_AtelierMesuresInsitu_LAAS_Oct2018_Dominique_Vignaud.pdf
    2. Préparation des substrats pour la croissance sélective de nanostructures III-V
      DESPLANQUE L., BUCAMP A., FAHED M., TROADEC D., PASTOREK M., FADJIE A.B., WICHMANN N., BOLLAERT S., PATRIARCHE G., WALLART X.
      Atelier du GDR PULSE « préparation des substrats pour l’épitaxie », Villeneuve d’Ascq, France, 22-24 mai, 2018
    3. Selective area growth of III-V semiconductors using atomic hydrogen during molecular beam epitaxy
      WALLART X., BUCAMP A., FAHED M., TROADEC D., PATRIARCHE G., WANG Y., RUTERANA P., ADDAD A., PASTOREK M., FADJIE A.B., VIGNAUD D., WICHMANN N., BOLLAERT S., DESPLANQUE L.
      7th International Conference on Nanostructures and Nanomaterials Self-Assembly, NanoSEA 2018, Carqueiranne, France, july 2-6, 2018, paper I19-2

PhD thesis

    1. Étude de semi-conducteurs III-V non-stoechiométriques pour l’échantillonnage de signaux hyperfréquences
      DEMONCHAUX T.
      Thèse de doctorat en Électronique, Microélectronique, Nanoélectronique et Micro-ondes, Université de Lille, 16 mai 2018
      http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-466824
2017

Articles

    1. 0-π phase transition in hybrid superconductor-InSb nanowire quantum dot devices
      LI S., KANG N., CAROFF P., XU H.Q.
      Phys. Rev. B 95, 1 (2017) 014515
      doi: 10.1103/PhysRevB.95.014515
    2. Ballistic transport and quantum interference in InSb nanowire devices
      LI S., HUANG G.Y., GUO J.K., KANG N., CAROFF P., XU H.Q.
      Chin. Phys. B 26, 2 (2017) 027305
      doi: 10.1088/1674-1056/26/2/027305
    3. Generation of mW level in the 300-GHz band using resonant-cavity-enhanced unitraveling carrier photodiodes
      LATZEL P., PAVANELLO F., BILLET M., BRETIN S., BECK A., VANWOLLEGHEM M., COINON C., WALLART X., PEYTAVIT E., DUCOURNAU G., ZAKNOUNE M., LAMPIN J.F.
      IEEE Trans. Terahertz Sci. Technol. 7, 6 (2017) 800-807
      doi: 10.1109/TTHZ.2017.2756059
    4. High performance heterostructure low barrier diodes for sub-THz detection
      NADAR S., ZAKNOUNE M., WALLART X., COINON C., PEYTAVIT E., DUCOURNAU G., GAMAND F., THIRAULT M., WERQUIN M., JONNIAU S., THOUVENIN N., GAQUIERE C., VELLAS N., LAMPIN J.F.
      IEEE Trans. Terahertz Sci. Technol. 7, 6 (2017) 780-788
      doi: 10.1109/TTHZ.2017.2755503
    5. Large area growth of vertically aligned luminescent MoS2 nanosheets
      DEOKAR G., RAJPUT N.S., VANCSO P., RAVAUX F., JOUIAD M., VIGNAUD D., CECCHET F., COLOMER J.F.
      Nanoscale 9, 1 (2017) 277-287
      doi: 10.1039/C6NR07965B
    6. Morphology and valence band offset of GaSb quantum dots grown on GaP (001) and their evolution upon capping
      DESPLANQUE L., COINON C., TROADEC D., RUTERANA P., PATRIARCHE G., BONATO L., BIMBERG D., WALLART X.
      Nanotechnology 28, 22 (2017) 225601
      doi: 10.1088/1361-6528/aa6f41
    7. Net-shaped pyramidal carbon-based ceramic materials designed for terahertz absorbers
      VENKATACHALAM S., DUCOURNAU G., LAMPIN J.F., HOURLIER D.
      Mater. Des. 120 (2017) 1-9
      doi: 10.1016/j.matdes.2017.02.002
    8. Optical imaging and characterization of graphene and other 2D materials using quantitative phase microscopy
      KHADIR S., BON P., VIGNAUD D., GALOPIN E., McEVOY N., McCLOSKEY D., MONNERET S., BAFFOU G.
      ACS Photonics 4, 12 (2017) 3130-3139
      doi: 10.1021/acsphotonics.7b00845
    9. Polymer derived ceramics with β-eucryptite fillers: a novel processing route to negative and near zero expansion materials
      FEDOROVA A., HOURLIER D., SCHEFFLER M.
      Ceram. Int. 43, 5 (2017) 4483-4488
      doi: 10.1016/j.ceramint.2016.12.099
    10. Pyrolytic conversion of organopolysiloxanes
      HOURLIER D., VENKATACHALAM S., AMMAR M.R., BLUM Y.
      J. Anal. Appl. Pyrolysis 123 (2017) 296-306
      doi: 10.1016/j.jaap.2016.11.016
    11. Study of the contact and the evaporation kinetics of a thin water liquid bridge between two hydrophobic plates
      PORTUGUEZ E., ALZINA A., MICHAUD P., HOURLIER D., SMITH A.
      Adv. Mater. Phys. Chem. 7, 4 (2017) 99-112
      doi: 10.4236/ampc.2017.74009
    12. Thermal conductivity of Kapton-derived carbon
      VENKATACHALAM S., DEPRIESTER M., HADJ SAHRAOUI A., CAPOEN B., AMMAR M.R., HOURLIER D.
      Carbon 114 (2017) 134-140
      doi: 10.1016/j.carbon.2016.11.072
    13. V-shaped InAs/Al0.5Ga0.5Sb vertical tunnel FET on GaAs (001) substrate with ION=433 µA.µm-1 at VDS= 0.5V
      CHINNI V.K., ZAKNOUNE M., COINON C., MORGENROTH L., TROADEC D., WALLART X., DESPLANQUE L.
      IEEE J. Electron Devices Soc. 5, 1 (2017) 53-58
      doi: 10.1109/JEDS.2016.2630499
    14. Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration
      FAHED M., DESPLANQUE L., TROADEC D., PATRIARCHE G., WALLART X.
      19th International Conference on Molecular Beam Epitaxy, MBE 2016, Montpellier, France, september 4-9, 2016
      J. Cryst. Growth 477 (2017) 45-49
      doi: 10.1016/j.jcrysgro.2016.12.029

Invited talks

    1. Selective area molecular beam epitaxy for InAs-based FETs
      DESPLANQUE L., FAHED M., PASTOREK M., COINON C., WICHMANN N., BOLLAERT S., WALLART X.
      19th European Workshop on Molecular Beam Epitaxy, EuroMBE19, Korobitsyno, Saint Petersburg, Russia, march 19-22, 2017

PhD thesis

    1. AlGaSb/InAs vertical tunnel field effect transistors for low power electronics
      CHINNI V.K.
      Thèse de doctorat en Micro et Nanotechnologies, Acoustique et Télécommunications, Université de Lille 1, 28 mars 2017
      http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-451443
    2. Polymer-derived carbon materials for terahertz wave absorption
      VENKATACHALAM S.S.
      Thèse de doctorat en Micro et Nanotechnologies, Acoustique et Télécommunications, Université de Lille 1, 10 février 2017
      http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-451091

Habilitation

    1. Contribution à la croissance par épitaxie par jets moléculaires d’hétérostructures antimoniées pour des applications électroniques haute fréquence et faible consommation
      DESPLANQUE L.
      Habilitation à diriger des recherches en Sciences Physiques, Université de Lille 1, 19 janvier 2017
      http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-462563
2016

Articles

    1. Branched polyesters from germylated and fatty compounds
      KATIR N., ANDRADE D., DAHROUCH M., DÍAZ E., GATICA N., HOURLIER D., REYES N., ZARRAGA M.
      J. Chil. Chem. Soc. 61, 1 (2016) 2784-2787
      doi: 10.4067/S0717-97072016000100008
    2. Coherent charge transport in ballistic InSb nanowire Josephson junctions
      LI S., KANG N., FAN D.X., WANG L.B., HUANG Y.Q., CAROFF P., XU H.Q.
      Sci. Rep. 6 (2016) 24822, 8 pages
      doi: 10.1038/srep24822
    3. Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP
      BONATO L., FIRAT ARIKAN I., DESPLANQUE L., COINON C., WALLART X., WANG Y., RUTERANA P., BIMBERG D.
      Phys. Status Solidi B-Basic Solid State Phys. 253, 10 (2016) 1877-1881
      doi: 10.1002/pssb.201600274
    4. Kapton-derived carbon as efficient terahertz absorbers
      VENKATACHALAM S., BERTIN D., DUCOURNAU G., LAMPIN J.F., HOURLIER D.
      Carbon 100 (2016) 158-164
      doi: 10.1016/j.carbon.2016.01.003
    5. Lazarevicite-type short-range ordering in ternary III-V nanowires
      SCHNEDLER M., LEFEBVRE I., XU T., PORTZ V., PATRIARCHE G., NYS J.P., PLISSARD S.R., CAROFF P., BERTHE M., EISELE H., DUNIN-BORKOWSKI R.E., EBERT P., GRANDIDIER B.
      Phys. Rev. B 94, 19 (2016) 195306
      doi: 10.1103/PhysRevB.94.195306
    6. NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles
      RAZADO-COLAMBO I., AVILA J., NYS J.P., CHEN C., WALLART X., ASENSIO M.C., VIGNAUD D.
      Sci. Rep. 6 (2016) 27261
      doi: 10.1038/srep27261
    7. Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement
      FAHED M., DESPLANQUE L., TROADEC D., PATRIARCHE G., WALLART X.
      Nanotechnology 27, 50 (2016) 505301
      doi: 10.1088/0957-4484/27/50/505301
    8. Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters
      GIORGIS V., MORINI F., ZHU T.Q., ROBILLARD J.F., WALLART X., CODRON J.L., DUBOIS E.
      J. Appl. Phys. 120, 20 (2016) 205108
      doi: 10.1063/1.4968532
    9. Synthesis and characterization of MoS2 nanosheets
      DEOKAR G., VIGNAUD D., ARENAL R., LOUETTE P., COLOMER J.F.
      Nanotechnology 27, 7 (2016) 075604
      doi: 10.1088/0957-4484/27/7/075604
    10. Twin-induced InSb nanosails: a convenient high mobility quantum system
      DE LA MATA M., LETURCQ R., PLISSARD S.R., ROLLAND C., MAGEN C., ARBIOL J., CAROFF P.
      Nano Lett. 16, 2 (2016) 825-833
      doi: 10.1021/acs.nanolett.5b05125
    11. Understanding the growth mechanism of graphene on Ge/Si(001) surfaces
      DABROWSKI J., LIPPERT G., AVILA J., BARINGHAUS J., COLAMBO I., DEDKOV Y.S., HERZIGER F., LUPINA G., MAULTZSCH J., SCHAFFUS T., SCHROEDER T., KOT M., TEGENKAMP C., VIGNAUD D., ASENSIO M.C.
      Sci. Rep. 6 (2016) 31639
      doi: 10.1038/srep31639

Invited talks

      1. Molecular beam epitaxy of single to few layer graphene on SiC, growth and electronic properties
        VIGNAUD D., WALLART X., RAZADO-COLAMBO I., AVILA J., ASENSIO M.C.
        International Conference « Graphene and Related Materials : Properties and Applications », GM 2016, Paestum, Italy, may 23-27, 2016

    PhD thesis

      1. Selective area growth of in-plane III-V nanostructures using molecular beam epitaxy
        FAHED M.
        Thèse de doctorat en Micro et Nanotechnologies, Acoustique et Télécommunications, Université de Lille 1, 24 novembre 2016
        http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-445799
2015

Articles

    1. Charge blinking statistics of semiconductor nanocrystals revealed by carbon nanotube single charge sensors
      ZBYDNIEWSKA E., DUZYNSKA A., POPOFF M., HOURLIER D., LENFANT S., JUDEK J., ZDROJEK M., MELIN T.
      Nano Lett. 15, 10 (2015) 6349-6356
      doi: 10.1021/acs.nanolett.5b01338
    2. Erratum: “On the effect of δ-doping in self-switching diodes” [Appl. Phys. Lett. 105, 093505 (2014)]
      WESTLUND A., IÑIGUEZ-DE-LA-TORRE I., NILSSON P.Å., GONZALEZ T., MATEOS J., SANGARE P., DUCOURNAU G., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J.
      Appl. Phys. Lett. 106, 19 (2015) 199902
      doi: 10.1063/1.4919884
    3. Formation of long single quantum dots in InSb nanowires grown by molecular beam epitaxy
      FAN D.X., LI S., KANG N., CAROFF P., WANG L.B., HUANG Y.Q., DENG M.T., YU C.L., XU H.Q.
      Nanoscale 7, 36 (2015) 14822-14828
      doi: 10.1039/C5NR04273A
    4. Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy
      LIU P., MARTINS F., HACKENS B., DESPLANQUE L., WALLART X., PALA M.G., HUANT S., BAYOT V., SELLIER H.
      Phys. Rev. B 91, 7 (2015) 075313
      doi: 10.1103/PhysRevB.91.075313
    5. Graphene FETs with aluminum bottom-gate electrodes and its natural oxide as dielectrics
      WEI W., ZHOU X., DEOKAR G., KIM H., BELHAJ M.M., GALOPIN E., PALLECCHI E., VIGNAUD D., HAPPY H.
      IEEE Trans. Electron Devices 62, 9 (2015) 2769-2773
      doi: 10.1109/TED.2015.2459657
    6. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy
      FAHED M., DESPLANQUE L., COINON C., TROADEC D., WALLART X.
      Nanotechnology 26 , 29 (2015) 295301, 8 pages
      doi: 10.1088/0957-4484/26/29/295301
    7. Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures : fabrication and zero-bias detector properties
      WESTLUND A., NILSSON P.Å., SANGARE P., DUCOURNAU G., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J.
      J. Vac. Sci. Technol. B 33, 2 (2015) 021207
      doi: 10.1116/1.4914314
    8. Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
      WESTLUND A., SANGARÉ P., DUCOURNAU G., IÑIGUEZ-DE-LA-TORRE I., NILSSON P.Å., GAQUIÈRE C., DESPLANQUE L., WALLART X., MILLITHALER J.F., GONZÁLEZ T., MATEOS J., GRAHN J.
      Solid-State Electron. 104 (2015) 79-85
      doi: 10.1016/j.sse.2014.11.014
    9. Probing the electronic properties of graphene on C-face SiC down to single domains by nanoresolved photoelectron spectroscopies
      RAZADO-COLAMBO I., AVILA J., CHEN C., NYS J.P., WALLART X., ASENSIO M.C., VIGNAUD D.
      Phys. Rev. B 92 , 3 (2015) 035105
      doi: 10.1103/PhysRevB.92.035105
    10. Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires
      DUBROVSKII V.G., XU T., DIAZ ALVAREZ A., LARRIEU G., PLISSARD S.R., CAROFF P., GLAS F., GRANDIDIER B.
      Nano Lett. 15, 8 (2015) 5580-5584
      doi: 10.1021/acs.nanolett.5b02226
    11. Towards high quality CVD graphene growth and transfer
      DEOKAR G., AVILA J., RAZADO-COLAMBO I., CODRON J.L., BOYAVAL C., GALOPIN E., ASENSIO M.C., VIGNAUD D.
      Carbon 89 (2015) 82-92
      doi: 10.1016/j.carbon.2015.03.017
    12. Tunnel junctions in a III-V nanowire by surface engineering
      NADAR S., ROLLAND C., LAMPIN J.F., WALLART X., CAROFF P., LETURCQ R.
      Nano Res. 8, 3 (2015) 980-989
      doi: 10.1007/s12274-014-0579-8
    13. Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires
      XU T., WEI M.J., CAPIOD P., DIAZ ALVAREZ A., HAN X.L., TROADEC D., NYS J.P., BERTHE M., LEFEBVRE I., PATRIARCHE G., PLISSARD S.R., CAROFF P., EBERT P., GRANDIDIER B.
      Appl. Phys. Lett. 107, 11 (2015) 112102
      doi: 10.1063/1.4930991

    Invited talks

    1. Optically-pumped continuous-wave terahertz sources
      LATZEL P., PAVANELLO F., PEYTAVIT E., ZAKNOUNE M., DUCOURNAU G., WALLART X., LAMPIN J.F.
      SPIE Photonics West 2015, Optoelectronics and Photonics Conference, OPTO 2015, Conference 9370 – Quantum Sensing and Nanophotonic Devices XII, San Francisco, CA, USA, february 7-12, 2015, Session 3 – THz Sources, paper [9370-7]
      Proc. SPIE-Int. soc. opt. eng. 9370 (2015) 937008, 6 pages, ISBN 9781628414608
      doi: 10.1117/12.2080756
2014

Articles

    1. 100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications
      GARDÈS C., BAGUMAKO S., DESPLANQUE L., WICHMANN N., BOLLAERT S., DANNEVILLE F., WALLART X., ROELENS Y.
      Sci. World J. 2014 (2014) 136340
      doi: 10.1155/2014/136340
    2. Carbohydrate-lectin interaction on graphene-coated surface plasmon resonance (SPR) interfaces
      PENEZIC A., DEOKAR G., VIGNAUD D., PICHONAT E., HAPPY H., SUBRAMANIAN P., GASPAROVIC B., BOUKHERROUB R., SZUNERITS S.
      Plasmonics 9, 3 (2014) 677-683
      doi: 10.1007/s11468-014-9686-3
    3. Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation
      LEFEBVRE E., MOSCHETTI G., MALMKVIST M., DESPLANQUE L., WALLART X., GRAHN J.
      Semicond. Sci. Technol. 29, 3 (2014) 035010
      doi: 10.1088/0268-1242/29/3/035010
    4. Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer
      CONESA-BOJ S., KRIEGNER D., HAN X.L., PLISSARD S.R., WALLART X., STANGL J., FONTCUBERTA I MORRAL A., CAROFF P.
      Nano Lett. 14, 1 (2014) 326-332
      doi: 10.1021/nl404085a
    5. Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy
      DESPLANQUE L., FAHED M., HAN X., CHINNI V.K., TROADEC D., CHAUVAT M.P., RUTERANA P., WALLART X.
      Nanotechnology 25, 46 (2014) 465302
      doi: 10.1088/0957-4484/25/46/465302
    6. InP HBT thermal management by transferring to high thermal conductivity silicon substrate
      THIAM A., ROELENS Y., COINON C., AVRAMOVIC V., GRANDCHAMP B., DUCATTEAU D., WALLART X., MANEUX C., ZAKNOUNE M.
      IEEE Electron Device Lett. 35, 10 (2014) 1010-1012
      doi: 10.1109/LED.2014.2347256
    7. Magnetotransport subband spectroscopy in InAs nanowires
      VIGNEAU F., PRUDKOVKIY V., DUCHEMIN I., ESCOFFIER W., CAROFF P., NIQUET Y.M., LETURCQ R., GOIRAN M., RAQUET B.
      Phys. Rev. Lett. 112, 7 (2014) 076801
      doi: 10.1103/PhysRevLett.112.076801
    8. On the effect of δ-doping in self-switching diodes
      WESTLUND A., INIGUEZ-DE-LA-TORRE I., NILSSON P.A., GONZALEZ T., MATEOS J., SANGARE P., DUCOURNAU G., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J.
      Appl. Phys. Lett. 105, 9 (2014) 093505
      doi: 10.1063/1.4894806

Invited talks

    1. Carbon hybrids with polymer-derived ceramics
      BLUM Y., HOURLIER D., SORRARU G.D.
      38th International Conference and Expo on Advanced Ceramics and Composites, ICACC 2014, 8th International Symposium on Advanced Processing and Manufacturing Technologies for Structural and Multifunctional Materials and Systems, APMT8, Daytona Beach, FL, USA, january 27-31, 2014, paper ICACC-S8-062-2014
    2. Electrical characterization of semiconductor nanowires by scanning tunneling microscopy
      DURAND C., CAPIOD P., BERTHE M., XU T., NYS J.P., LETURCQ R., CAROFF P., GRANDIDIER B.
      SPIE Photonics West, OPTO, Conference 8996 – Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, San Francisco, CA, USA, februay 1-6, 2014, session 4, paper 8996-11
      Proc. SPIE-Int. soc. opt. eng. 8996 (2014) 89960E, 10 pages
      doi: 10.1117/12.2042767
    3. High frequency electronic devices : impact of beyond graphene materials
      HAPPY H., MELE D., COLAMBO I., KHENISSA M.S., BELHAJ M.M., PALLECCHI E., OUERGHI A., VIGNAUD D., DAMBRINE G.
      62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK – Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications, Tampa, FL, USA, june 1-6, 2014
2013

Articles

    1. Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface
      WANG Y., RUTERANA P., CHEN J., KRET S., EL KAZZI S., GENEVOIS C., DESPLANQUE L., WALLART X.
      ACS Appl. Mater. Interfaces 5, 19 (2013) 9760-9764
      doi: 10.1021/am4028907
    2. Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
      CAPIOD P., XU T., NYS J.P., BERTHE M., PATRIARCHE G., LYMPERAKIS L., NEUGEBAUER J., CAROFF P., DUNIN-BORKOWSKI R.E., EBERT P., GRANDIDIER B.
      Appl. Phys. Lett. 103, 12 (2013) 122104
      doi: 10.1063/1.4821293
    3. Coherent tunnelling across a quantum point contact in the quantum Hall regime
      MARTINS F., FANIEL S., ROSENOW B., SELLIER H., HUANT S., PALA M.G., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B.
      Sci. Rep. 3 (2013) 1416
      doi: 10.1038/srep01416
    4. DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation
      MOSCHETTI G., LEFEBVRE E., FAGERLIND M., NILSSON P.A., DESPLANQUE L., WALLART X., GRAHN J.
      Solid-State Electron. 87 (2013) 85-89
      doi: 10.1016/j.sse.2013.06.008
    5. Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene
      GODEL F., PICHONAT E., VIGNAUD D., MAJJAD H., METTEN D., HENRY Y., BERCIAUD S., DAYEN J.F., HALLEY D.
      Nanotechnology 24, 47 (2013) 475708
      doi: 10.1088/0957-4484/24/47/475708
    6. Exploring electronic structure of one-atom thick polycrystalline graphene films: a nano angle resolved photoemission study
      AVILA J., RAZADO I., LORCY S., FLEURIER R., PICHONAT E., VIGNAUD D., WALLART X., ASENSIO M.C.
      Sci. Rep. 3 (2013) 2439
      doi: 10.1038/srep02439
    7. High-resolution angle-resolved photoemission spectroscopy study of monolayer and bilayer graphene on the C-face of SiC
      MOREAU E., GODEY S., WALLART X., RAZADO-COLAMBO I., AVILA J., ASENSIO M.C., VIGNAUD D.
      Phys. Rev. B 88, 7 (2013) 075406
      doi: 10.1103/PhysRevB.88.075406
    8. Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
      ROLLAND C., CAROFF P., COINON C., WALLART X., LETURCQ R.
      Appl. Phys. Lett. 102, 22 (2013) 223105
      doi: 10.1063/1.4809576
    9. Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor
      SHI M., SAINT-MARTIN J., BOURNEL A., QUERLIOZ D., DOLLFUS P., MO J.J., WICHMANN N., DESPLANQUE L., WALLART X., DANNEVILLE F., BOLLAERT S.
      J. Nanosci. Nanotechnol. 13, 2 (2013) 771-775
      doi: 10.1166/jnn.2013.6115
    10. Persistent enhancement of the carrier density in electron irradiated InAs nanowires
      DURAND C., BERTHE M., MAKOUDI Y., NYS J.P., LETURCQ R., CAROFF P., GRANDIDIER B.
      Nanotechnology 24, 27 (2013) 275706
      doi: 10.1088/0957-4484/24/27/275706
    11. Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon
      ALARCON-LLADO E., CONESA-BOJ S., WALLART X., CAROFF P., FONTCUBERTA I MORRAL A.
      Nanotechnology 24, 40 (2013) 405707
      doi: 10.1088/0957-4484/24/40/405707
    12. Scanning gate spectroscopy of transport across a quantum Hall nano-island
      MARTINS F., FANIEL S., ROSENOW B., PALA M.G., SELLIER H., HUANT S., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B.
      New J. Phys. 15, 1 (2013) 013049
      doi: 10.1088/1367-2630/15/1/013049
    13. Terahertz detection in zero-bias InAs self-switching diodes at room temperature
      WESTLUND A., SANGARE P., DUCOURNAU G., NILSSON P.A., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J.
      Appl. Phys. Lett. 103, 13 (2013) 133504
      doi: 10.1063/1.4821949
    14. The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism
      WANG Y., RUTERANA P., KRET S., EL KAZZI S., DESPLANQUE L., WALLART X.
      Appl. Phys. Lett. 102, 5 (2013) 052102
      doi: 10.1063/1.4790296
    15. True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
      MOSCHETTI G., ABBASI M., NILSSON P.A., HALLEN A., DESPLANQUE L., WALLART W., GRAHN J.
      Solid-State Electron. 79 (2013) 268-273
      doi: 10.1016/j.sse.2012.06.013

Invited talks

    1. Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
      CAPIOD P., XU T., NYS J.P., BERTHE M., PATRIARCHE G., LYMPERAKIS L., NEUGEBAUER J., CAROFF P., DUNIN-BORKOWSKI R., EBERT P., GRANDIDIER B.
      4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, SemiconNano 2013, Lake Arrowhead, CA, USA, september 29-october 4, 2013
    2. MBE of graphene
      VIGNAUD D.
      17th European Molecular Beam Epitaxy Workshop, Euro MBE 2013, Levi, Finland, march 10-13, 2013

Books (or book chapters)

    1. Graphene growth by molecular beam epitaxy
      VIGNAUD D., MOREAU E.
      in Molecular beam epitaxy, Henini M. (Ed)
      ISBN 978-0-12-387839-7
      Elsevier (2013) chapter 23, 547-557
      doi: 10.1016/B978-0-12-387839-7.00023-3
2012

Articles

    1. AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
      DESPLANQUE L., EL KAZZI S., CODRON J.L., WANG Y., RUTERANA P., MOSCHETTI G., GRAHN J., WALLART X.
      Appl. Phys. Lett. 100, 26 (2012) 262103-1-4
      doi: 10.1063/1.4730958
    2. Anomalous zero-bias conductance peak in a Nb-InSb nanowire-Nb hybrid device
      DENG M.T., YU C.L., HUANG G.Y., LARSSON M., CAROFF P., XU H.Q.
      Nano Lett. 12, 12 (2012) 6414-6419
      doi: 10.1021/nl303758w
    3. Combinatorial approaches to understanding polytypism in III-V nanowires
      JOHANSSON J., BOLINSSON J., EK M., CAROFF P., DICK K.A.
      ACS Nano 6, 7 (2012) 6142-6149
      doi: 10.1021/nn301477x
    4. Cryogenic InAs/AlSb HEMT wideband low-noise IF amplifier for ultra-low-power applications
      MOSCHETTI G., WADEFALK N., NILSSON P.A., ABBASI M., DESPLANQUE L., WALLART X., GRAHN J.
      IEEE Microw. Wirel. Compon. Lett. 22, 3 (2012) 144-146
      doi: 10.1109/LMWC.2011.2182637
    5. Demonstration of defect-free and composition tunable GaxIn1-xSb nanowires
      GHALAMESTANI S.G., EK M., GANJIPOUR B., THELANDER C., JOHANSSON J., CAROFF P., DICK K.A.
      Nano Lett. 12, 9 (2012) 4914-4919
      doi: 10.1021/nl302497r
    6. Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy
      THELANDER C., CAROFF P., PLISSARD S., DICK K.A.
      Appl. Phys. Lett. 100, 23 (2012) 232105-1-4
      doi: 10.1063/1.4726037
    7. Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
      XU T., DICK K.A., PLISSARD S., NGUYEN T.H., MAKOUDI Y., BERTHE M., NYS J.P., WALLART X., GRANDIDIER B., CAROFF P.
      Nanotechnology 23, 9 (2012) 095702-1-9
      doi: 10.1088/0957-4484/23/9/095702
    8. Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces
      WANG Y., RUTERANA P., DESPLANQUE L., EL KAZZI S., WALLART X.
      EPL-Europhys. Lett. 97, 6 (2012) 68011-1-6
      doi: 10.1209/0295-5075/97/68011
    9. Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP
      EL KAZZI S., DESPLANQUE L., WALLART X., WANG Y., RUTERANA P.
      J. Appl. Phys. 111, 12 (2012) 123506-1-5
      doi: 10.1063/1.4729548
    10. Investigation of indium nitride for micro-nanotechnology
      GOKARNA A., LAMPIN J.F., VIGNAUD D., DOGHECHE E., DECOSTER D., RUFFENACH S., BRIOT O., MORET M.
      Int. J. Nanotechnol. 9 , 10-12 (2012) 900-906
      doi: 10.1504/IJNT.2012.049454
    11. Mechanism of formation of the misfit dislocations at the cubic materials interfaces
      WANG Y., RUTERANA P., KRET S., CHEN J., EL KAZZI S., DESPLANQUE L., WALLART X.
      Appl. Phys. Lett. 100 , 26 (2012) 262110-1-5
      doi: 10.1063/1.4731787
    12. Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer
      DESPLANQUE L., EL KAZZI S., COINON C., ZIEGLER S., KUNERT B., BEYER A., VOLZ K., STOLZ W., WANG Y., RUTERANA P., WALLART X.
      Appl. Phys. Lett. 101, 14 (2012) 142111-1-4
      doi: 10.1063/1.4758292
    13. Planar InAs/AlSb HEMTs with ion-implanted isolation
      MOSCHETTI G., NILSSON P.A., HALLEN A., DESPLANQUE L., WALLART X., GRAHN J.
      IEEE Electron Device Lett. 33, 4 (2012) 510-512
      doi: 10.1109/LED.2012.2185480
    14. Polarization-dependent light extinction in ensembles of polydisperse vertical semiconductor nanowires: a Mie scattering effective medium
      GRZELA G., HOURLIER D., GOMEZ-RIVAS J.
      Phys. Rev. B 86, 4 (2012) 045305-1-7
      doi: 10.1103/PhysRevB.86.045305
    15. Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy
      WANG Y., RUTERANA P., CHEN J., DESPLANQUE L., EL KAZZI S., WALLART X.
      J. Phys.-Condens. Matter 24, 33 (2012) 335802-1-7
      doi: 10.1088/0953-8984/24/33/335802
    16. Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction
      NILSSON H., SAMUELSSON P., CAROFF P., XU H.Q.
      Nano Lett. 12, 1 (2012) 228-233
      doi: 10.1021/nl203380w
    17. Surface and intrinsic conduction properties of Au-catalyzed Si nanowires
      BOROWIK L., FLOREA I., DERESMES D., ERSEN O., HOURLIER D., MELIN T.
      J. Phys. Chem. C 116, 11 (2012) 6601-6607
      doi: 10.1021/jp300816e
    18. Transport inefficiency in branched-out mesoscopic networks: an analog of the Braess paradox
      PALA M.G., BALTAZAR S., LIU P., SELLIER H., HACKENS B., MARTINS F., BAYOT V., WALLART X., DESPLANQUE L., HUANT S.
      Phys. Rev. Lett. 108, 7 (2012) 076802-1-5
      doi: 10.1103/PhysRevLett.108.076802
    19. Vertical III-V V-shaped nanomembranes epitaxially grown on a patterned Si[001] substrate and their enhanced light scattering
      CONESA-BOJ S., RUSSO-AVERCHI E., DALMAU-MALLORQUI A., TREVINO J., PECORA E.F., FORESTIERE C., HANDIN A., EK M., ZWEIFEL L., WALLENBERG L.R., RÜFFER D., HEISS M., TROADEC D., DAL NEGRO L., CAROFF P., FONTCUBERTA I MORRAL A.
      ACS Nano 6, 12 (2012) 10982-10991
      doi: 10.1021/nn304526k

Invited talks

    1. Carbon electronics for high frequency applications
      HAPPY H., MENG N., PICHONAT E., LEPILLIET S., DAMBRINE G., VIGNAUD D., SIRE C., ARDIACA F., DERYCKE D.
      2nd International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2012, Xi’an, China, august 29-september 1, 2012
    2. Graphene growth and synthesis
      VIGNAUD D.
      European Microwave Week, EuMC/EuMIC, Workshop W16 : Graphene RF Nanoelectronics, Amsterdam, The Netherlands, october 28-november 2, 2012
    3. Graphene on SiC : from graphitization to molecular beam epitaxy
      VIGNAUD D.
      21st European Workshop on Heterostructure Technology, HeTech 2012, Barcelona, Spain, november 5-7, 2012
    4. Inorganic one-dimensional nanostructured materials
      HOURLIER D.
      2nd International Conference on Competitive Materials and Technology Processes, IC-CMTP2, Miskolc-Lillafüred, Hungary, october 8-12, 2012, 16-16, ISBN 978-963-08-4874-9
    5. LT GaAs nanophotoswitches for microwave sampling
      DECOSTER D., PAGIES A., LAMPIN J.F., WALLART X., MAGNIN V., HARARI J., TRIPON-CANSELIET C., FACI S., FORMONT S., MENAGER L., CHAZELAS J., JESTIN G.
      SPIE 2012 Photonics West, Quantum Sensing and Nanophotonic Devices IX, San Francisco, CA, USA, january 21-26, 2012, Paper 8268-83

Books (or book chapters)

    1. Carbon electronics for high-frequency applications
      HAPPY H., NOUGARET L., MENG N., PICHONAT E., DERYCKE V., VIGNAUD D., DAMBRINE G.
      in Carbon nanotubes and their applications, Zhang Q. (Ed)
      ISBN 978-981-4241-90-8 ; e-ISBN 978-981-4303-18-7
      Pan Stanford Publishing (2012) chapter 6, 203-220
      http://books.google.fr/books?isbn=9814241903

PhD thesis

    1. Croissance épitaxiale d’hétérostructures antimoniées sur substrats fortement désadaptés en maille pour application aux transistors à effet de champ
      EL KAZZI S.
      Thèse de doctorat en Micro et Nanotechnologies, Acoustique et Télécommunications, Université de Lille 1, 13 novembre 2012
      http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-117932
2011

Articles

    1. [Invited paper] Crystal phases in III-V nanowires: from random toward engineered polytypism
      CAROFF P., BOLINSSON J., JOHANSSON J.
      IEEE J. Sel. Top. Quantum Electron. 17, 4 (2011) 829-846
      doi: 10.1109/JSTQE.2010.2070790
    2. [Invited paper] InSb nanowire field-effect transistors and quantum-dot devices
      NILSSON H.A., DENG M.T., CAROFF P., THELANDER C., SAMUELSON L., WERNERSSON L.E., XU H.Q.
      IEEE J. Sel. Top. Quantum Electron. 17, 4 (2011) 907-914
      doi: 10.1109/JSTQE.2010.2090135
    3. [Invited] Scanning-gate microscopy of semiconductor nanostructures : an overview
      MARTINS F., HACKENS B., SELLIER H., LIU P., PALA M.G., BALTAZAR S., DESPLANQUE L., WALLART X., BAYOT V., HUANT S.
      Acta Phys. Pol. A 119, 5 (2011) 569-575
      http://przyrbwn.icm.edu.pl/APP/ABSTR/119/a119-5-1.html
    4. Characterization of ion/electron beam induced deposition of electrical contacts at the sub-μm scale
      BRUNEL D., TROADEC D., HOURLIER D., DERESMES D., ZDROJEK M., MELIN T.
      Microelectron. Eng. 88, 7 (2011) 1569-1572
      doi: 10.1016/j.mee.2011.03.011
    5. Effects of crystal phase mixing on the electrical properties of InAs nanowires
      THELANDER C., CAROFF P., PLISSARD S., DEY A.W., DICK K.A.
      Nano Lett. 11, 6 (2011) 2424-2429
      doi: 10.1021/nl2008339
    6. Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor
      MENG N., FERNANDEZ J.F., VIGNAUD D., DAMBRINE G., HAPPY H.
      IEEE Trans. Electron Devices 58, 6 (2011) 1594-1596
      doi: 10.1109/TED.2011.2119486
    7. High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning
      PLISSARD S., LARRIEU G., WALLART X., CAROFF P.
      Nanotechnology 22, 27 (2011) 275602-1-7
      doi: 10.1088/0957-4484/22/27/275602
    8. InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
      MOSCHETTI G., WADEFALK N., NILSSON P.A., ROELENS Y., NOUDEVIWA A., DESPLANQUE L., WALLART X., DANNEVILLE F., DAMBRINE G., BOLLAERT S., GRAHN J.
      Solid-State Electron. 64, 1 (2011) 47-53
      doi: 10.1016/j.sse.2011.06.048
    9. Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy
      FERRER F.J., MOREAU E., VIGNAUD D., DERESMES D., GODEY S., WALLART X.
      J. Appl. Phys. 109, 5 (2011) 054307-1-6
      doi: 10.1063/1.3560896
    10. Investigation of the anisotropic strain relaxation in GaSb islands on GaP
      WANG Y., RUTERANA P., LEI H.P., CHEN J., KRET S., EL KAZZI S., DESPLANQUE L., WALLART X.
      J. Appl. Phys. 110, 4 (2011) 043509-1-8
      doi: 10.1063/1.3622321
    11. On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
      SELLIER H., HACKENS B., PALA M.G., MARTINS F., BALTAZAR S., WALLART X., DESPLANQUE L., BAYOT V., HUANT S.
      Semicond. Sci. Technol. 26, 06 (2011) 064008-1-10
      doi: 10.1088/0268-1242/26/6/064008
    12. Size-dependent catalytic and melting properties of platinum-palladium nanoparticles
      GUISBIERS G., ABUDUKELIMU G., HOURLIER D.
      Nanoscale Res. Lett. 6, 1 (2011) 396-1-5
      doi: 10.1186/1556-276X-6-396
    13. Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness
      WANG Y., RUTERANA P., DESPLANQUE L., EL KAZZI S., WALLART X.
      J. Appl. Phys. 109, 2 (2011) 023509-1-6
      doi: 10.1063/1.3532053
    14. Thermal conductivity of indium arsenide nanowires with wurtzite and zinc blende phases
      ZHOU F., MOORE A.L., BOLINSSON J., PERSSON A., FRÖBERG L., PETTES M.T., KONG H., RABENBERG L., CAROFF P., STEWART D.A., MINGO N., DICK K.A., SAMUELSON L., LINKE H., SHI L.
      Phys. Rev. B 83, 20 (2011) 205416-1-10
      doi: 10.1103/PhysRevB.83.205416
    15. Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
      NILSSON H.A., CAROFF P., LIND E., PISTOL M.E., THELANDER C., WERNERSSON L.E.
      J. Appl. Phys. 110, 6 (2011) 064510-1-4
      doi: 10.1063/1.3633742
    16. Unit cell structure of crystal polytypes in InAs and InSb nanowires
      KRIEGNER D., PANSE C., MANDL B., DICK K.A., KEPLINGER M., PERSSON J.M., CAROFF P., ERCOLANI D., SORBA L., BECHSTEDT F., STANGL J., BAUER G.
      Nano Lett. 11, 4 (2011) 1483-1489
      doi: 10.1021/nl1041512
    17. Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method
      BOLINSSON J., CAROFF P., MANDL B., DICK K.A.
      Nanotechnology 22, 26 (2011) 265606-1-10
      doi: 10.1088/0957-4484/22/26/265606
    18. Compliance at the GaSb/GaP interface by misfit dislocations array
      EL KAZZI S., DESPLANQUE L., COINON C., WANG Y., RUTERANA P., WALLART X.
      1st Mediterranean Conference on Innovative Materials and Applications, CIMA 2011, Beirut, Lebanon, march 15-17, 2011
      Adv. Mater. Res. 324 (2011) 85-88
      doi: 10.4028/www.scientific.net/AMR.324.85
    19. Parameter space mapping of InAs nanowire crystal structure
      DICK K.A., BOLINSSON J., MESSING M.E., LEHMANN S., JOHANSSON J., CAROFF P.
      38th Conference on the Physics and Chemistry of Surfaces and Interfaces, PCSI-38, San Diego, CA, USA, january 16-20, 2011
      J. Vac. Sci. Technol. B 29, 4 (2011) 04D103-1-9
      doi: 10.1116/1.3593457
    20. Scanning confocal Raman spectroscopy of silicon phase distribution in individual Si nanowires
      NIKOLENKO A., STRELCHUK V., KLIMOVSKAYA A., LYTVYN P., VALAKH M., PEDCHENKO Y., VOROSCHENKO A., HOURLIER D.
      European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium J : Silicon-based nanophotonics, Strasbourg, France, june 7-11, 2010
      Phys. Status Sol. C, Curr. Top. Solid State Phys. 8, 3 (2011) 1012-1016
      doi: 10.1002/pssc.201000409
    21. Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
      ASTROMSKAS G., STORM K., CAROFF P., BORGSTRÖM M., LIND E., WERNERSSON L.E.
      European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium H : Post-Si-CMOS electronic devices : the role of Ge and III-V materials, Strasbourg, France, june 7-11, 2010
      Microelectron. Eng. 88, 4 (2011) 444-447
      doi: 10.1016/j.mee.2010.08.010

Invited talks

    1. Crystal phase engineering in III-As(-Sb) single nanowires
      CAROFF P., PLISSARD D., BOLINSSON J., DICK K.A.
      Villa Conference on Interactions among Nanostructures, VCIAN 2011, Las Vegas, NV, USA, april 21-25, 2011
    2. Polytypism in III-V nanowires
      LEHMANN S., DICK K.A., JOHANSSON J., CAROFF P., BOLINSSON J., MESSING M.E., JACOBSSON D., DEPPERT K., SAMUELSON L.
      3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, SemiconNano 2011, Traunkirchen, Austria, september 11-16, 2011
    3. Graphene growth (for device applications)
      VIGNAUD D.
      41st European Solid-State Device Research Conference, ESSDERC 2011, Tutorial on Graphene and its Potential Applications, Helsinki, Finland, september 12-16, 2011

PhD thesis

    1. Elaboration de graphène par épitaxie par jets moléculaires et caractérisations
      MOREAU E.
      Thèse de doctorat en Micro et Nanotechnologies, Acoustique et Télécommunication, Université de Lille 1, 9 décembre 2011
      http://tel.archives-ouvertes.fr/tel-00665851
2010

Articles

    1. [Invited paper] Control of III-V nanowire crystal structure by growth parameter tuning
      DICK K.A., CAROFF P., BOLINSSON J., MESSING M.E., JOHANSSON J., DEPPERT K., WALLENBERG L.R., SAMUELSON L.
      Semicond. Sci. Technol. 25, 2 (2010) 024009-1-1
      doi: 10.1088/0268-1242/25/2/024009
    2. 60 GHz current gain cut-off frequency graphene nanoribbon FET
      MENG N., FERRER F.J., VIGNAUD D., DAMBRINE G., HAPPY H.
      Int. J. Microw. Wirel. Technol. 2, 5 (2010) 441-444
      doi: 10.1017/S175907871000070X
    3. Anisotropic transport properties in InAs/AlSb heterostructures
      MOSCHETTI G., ZHAO H., NILSSON P.A., WANG S., KALABUKHOV A., DAMBRINE G., BOLLAERT S., DESPLANQUE L., WALLART X., GRAHN J.
      Appl. Phys. Lett. 97, 24 (2010) 243510-1-3
      doi: 10.1063/1.3527971
    4. Au-Si and Au-Ge phases diagrams for nanosytems
      HOURLIER D., PERROT P.
      Mater. Sci. Forum 653 (2010) 77-85
      doi: 10.4028/www.scientific.net/MSF.653.77
    5. Correlation-induced conductance suppression at level degeneracy in a quantum dot
      NILSSON H.A., KARLSTRÖM O., LARSSON M., CAROFF P., PEDERSEN J.N., SAMUELSON L., WACKER A., WERNERSSON L.E., XU H.Q.
      Phys. Rev. Lett. 104, 18 (2010) 186804-1-4
      doi: 10.1103/PhysRevLett.104.186804
    6. Crystal phase engineering in single InAs nanowires
      DICK K.A., THELANDER C., SAMUELSON L., CAROFF P.
      Nano Lett. 10, 9 (2010) 3494-3499
      doi: 10.1021/nl101632a
    7. Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires
      JOHANSSON J., DICK K.A., CAROFF P., MESSING M.E., BOLINSSON J., DEPPERT K., SAMUELSON L.
      J. Phys. Chem. C 114, 9 (2010) 3837-3842
      doi: 10.1021/jp910821e
    8. Doping incorporation in InAs nanowires characterized by capacitance measurements
      ASTROMSKAS G., STORM K., KARLSTRÖM O., CAROFF P., BORGSTRÖM M., WERNERSSON L.E.
      J. Appl. Phys. 108, 5 (2010) 054306-1-5
      doi: 10.1063/1.3475356
    9. Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure
      DESPLANQUE L., VIGNAUD D., GODEY S., CADIO E., PLISSARD S., WALLART X., LIU P., SELLIER H.
      J. Appl. Phys. 108, 4 (2010) 043704-1-6
      doi: 10.1063/1.3475709
    10. Frequency dependent rotation and translation of nanowires in liquid environment
      MARCZAK M., HOURLIER D., MELIN T., ADAMOWICZ L., DIESINGER H.
      Appl. Phys. Lett. 96, 23 (2010) 233502-1-3
      doi: 10.1063/1.3430738
    11. Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer
      PLISSARD S., COINON C., ANDROUSSI Y., WALLART X.
      J. Appl. Phys. 107, 1 (2010) 016102-1-3
      doi: 10.1063/1.3275872
    12. GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
      EL KAZZI S., DESPLANQUE L., COINON C., WANG Y., RUTERANA P., WALLART X.
      Appl. Phys. Lett. 97, 19 (2010) 192111-1-3
      doi: 10.1063/1.3515867
    13. Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
      PLISSARD S., DICK K.A., WALLART X., CAROFF P.
      Appl. Phys. Lett. 96, 12 (2010) 121901-1-3
      doi: 10.1063/1.3367746
    14. Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
      PLISSARD S., DICK K.A., LARRIEU G., GODEY S., ADDAD A., WALLART X., CAROFF P.
      Nanotechnology 21, 38 (2010) 385602-1-8
      doi: 10.1088/0957-4484/21/38/385602
    15. Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential
      LAMPIN E., PRIESTER C., KRZEMINSKI C., MAGAUD L.
      J. Appl. Phys. 107, 10 (2010) 103514-1-7
      doi: 10.1063/1.3357297
    16. Graphene growth by molecular beam epitaxy on the carbon-face of SiC
      MOREAU E., GODEY S., FERRER F.J., VIGNAUD D., WALLART X., AVILA J., ASENSIO M.C., BOURNEL F., GALLET J.J.
      Appl. Phys. Lett. 97, 24 (2010) 241907-1-3
      doi: 10.1063/1.3526720
    17. Imaging Coulomb islands in a quantum Hall interferometer
      HACKENS B., MARTINS F., FANIEL S., DUTU C.A., SELLIER H., HUANT S., PALA M., DESPLANQUE L., WALLART X., BAYOT V.
      Nat. Commun. 1 (2010) 39-1-6
      doi: 10.1038/ncomms1038
    18. Improvement of ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors
      MAIRIAUX E., DESPLANQUE L., WALLART X., ZAKNOUNE M.
      J. Vac. Sci. Technol. B 28, 1 (2010) 17-20
      doi: 10.1116/1.3268134
    19. Microwave performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb double heterojunction bipolar transistors
      MAIRIAUX E., DESPLANQUE L., WALLART X., ZAKNOUNE M.
      IEEE Electron Device Lett. 31, 4 (2010) 299-301
      doi: 10.1109/LED.2010.2040241
    20. Picosecond carrier lifetime in low-temperature-grown GaAsSb
      WALLART X., COINON C., PLISSARD S., GODEY S., OFFRANC O., ANDROUSSI Y., MAGNIN V., LAMPIN J.F.
      Appl. Phys. Express 3, 11 (2010) 111202-1-3
      doi: 10.1143/APEX.3.111202
    21. Sb-HEMT: toward 100-mV cryogenic electronics
      NOUDEVIWA A., ROELENS Y., DANNEVILLE F., OLIVIER A., WICHMANN N., WALDHOFF N., LEPILLIET S., DAMBRINE G., DESPLANQUE L., WALLART X., MOSCHETTI G., GRAHN J., BOLLAERT S.
      IEEE Trans. Electron Devices 57, 8 (2010) 1903-1909
      doi: 10.1109/TED.2010.2050109
    22. Temperature dependent properties of InSb and InAs nanowire field-effect transistors
      NILSSON H.A., CAROFF P., THELANDER C., LIND E., KARLSTRÖM O., WERNERSSON L.E.
      Appl. Phys. Lett. 96, 15 (2010) 153505-1-3
      doi: 10.1063/1.3402760
    23. The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors
      THELANDER C., DICK K.A., BORGSTRÖM M.T., FRÖBERG L.E., CAROFF P., NILSSON H.A., SAMUELSON L.
      Nanotechnology 21, 20 (2010) 205703-1-9
      doi: 10.1088/0957-4484/21/20/205703
    24. Graphene growth by molecular beam epitaxy using a solid carbon source
      MOREAU E., FERRER F.J., VIGNAUD D., GODEY S., WALLART X.
      12th International Conference on the Formation of Semiconductor Interfaces, ICFSI-12, Weimar, Germany, july 5-10, 2009
      Phys. Status Solidi A-Appl. Mat. Sci. 207, 2 (2010) 300-303
      doi: 10.1002/pssa.200982412
    25. Towards the 3-D microfabrication and integration of a complete power unit used for energy autonomous wireless system
      PICHONAT T., LETHIEN C., HOURLIER D., TIERCELIN N., TROADEC D., ROLLAND P.A.
      216th Electrochemical Sociaty Meeting, Battery/Energy Technology Joint General Session, Vienna, Austria, october 4-9, 2009
      ECS Trans. 25, 35 (2010) 11-21
      doi: 10.1149/1.3414000

Invited talks

    1. MBE growth of antimony-based heterostructures for microelectronic applications
      WALLART X., DESPLANQUE L., VIGNAUD D., PLISSARD S., DELHAYE G., YAREKHA D., BOLLAERT S., ROELENS Y., NOUDEVIWA A., DANNEVILLE F., OLIVIER A., WICHMANN N., ZAKNOUNE M., MAIRIAUX E., DAMBRINE G., GRAHN J., MOSCHETTI G., NILSSON P.A., MALMKVIST M., LEFEBVRE E.
      10th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, EXMATEC 2010, Darmstadt/Seeheim, Germany, may 19-21, 2010
    2. Scanning-gate microscopy of semiconductor nanostructures : an overview
      MARTINS F., HACKENS B., SELLIER H., LIU P., PALA M.G., BALTAZAR S., DESPLANQUE L., WALLART X., BAYOT V., HUANT S.
      XXXIX ‘Jaszowiec’ International School and Conference on the Physics of Semiconductors, Krynica-Zdrój, Poland, june 19-24, 2010
    3. Wurtzite-zinc blende transition in InAs nanowires
      JOHANSSON J., DICK K., CAROFF P., MESSING M., BOLINSSON J., DEPPERT K., SAMUELSON L.
      15th International Conference on Metal Organic Vapor Phase Epitaxy, ICMOVPE-XV, Incline Village, NV, USA, may 23-28, 2010
2009

Articles

    1. 2×2 InP optical switching matrix based on carrier-induced effects for 1.55-µm applications
      ZEGAOUI M., CHOUEIB N., HARARI J., DECOSTER D., MAGNIN V., WALLART X., CHAZELAS J.
      IEEE Photonics Technol. Lett. 21, 19 (2009) 1357-1359
      doi: 10.1109/LPT.2009.2026484
    2. A new low crosstalk InP digital optical switch based on carrier-induced effects for 1.55-µm applications
      ZEGAOUI M., DECOSTER D., HARARI J., MAGNIN V., WALLART X., CHAZELAS J.
      IEEE Photonics Technol. Lett. 21, 8 (2009) 546-548
      doi: 10.1109/LPT.2009.2014646
    3. Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux
      FERRER F.J., MOREAU E., VIGNAUD D., GODEY S., WALLART X.
      Semicond. Sci. Technol. 24, 12 (2009) 125014-1-4
      doi: 10.1088/0268-1242/24/12/125014
    4. Controlled polytypic and twin-plane superlattices in III-V nanowires
      CAROFF P., DICK K.A., JOHANSSON J., MESSING M.E., DEPPERT K., SAMUELSON L.
      Nat. Nanotechnol. 4, 1 (2009) 50-55
      doi: 10.1038/nnano.2008.359
    5. Critical thickness for InAs quantum dot formation on (311)B InP substrates
      CAROFF P., BERTRU N., LU W., ELIAS G., DEHAESE O., LETOUBLON A., LE CORRE A.
      J. Cryst. Growth 311, 9 (2009) 2626-2629
      doi: 10.1016/j.jcrysgro.2009.02.048
    6. Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor
      WICHMANN N., VASALLO B.G., BOLLAERT S., ROELENS Y., WALLART X., CAPPY A., GONZALEZ T., PARDO D., MATEOS J.
      Appl. Phys. Lett. 94, 10 (2009) 103504-1-3
      doi: 10.1063/1.3095482
    7. Gate-recess technology for InAs/AlSb HEMTs
      LEFEBVRE E., MALMKVIST M., BORG M., DESPLANQUE L., WALLART X., DAMBRINE G., BOLLAERT S., GRAHN J.
      IEEE Trans. Electron Devices 56, 9 (2009) 1904-1911
      doi: 10.1109/TED.2009.2026123
    8. Giant, level-dependent g factors in InSb nanowire quantum dots
      NILSSON H.A., CAROFF P., THELANDER C., LARSSON M., WAGNER J.B., WERNERSSON L.E., SAMUELSON L., XU H.Q.
      Nano Lett. 9, 9 (2009) 3151-3156
      doi: 10.1021/nl901333a
    9. Growth of vertical InAs nanowires on heterostructured substrates
      RODDARO S., CAROFF P., BIASIOL G., ROSSI F., BOCCHI C., NILSSON K., FRÖBERG L., WAGNER J.B., SAMUELSON L., WERNERSSON L.E., SORBA L.
      Nanotechnology 20, 28 (2009) 285303-1-6
      doi: 10.1088/0957-4484/20/28/285303
    10. High thermally induced index variations with short response time in InP/GaInAsP/InP waveguide Schottky diodes
      SAADSAOUD N., ZEGAOUI M., DECOSTER D., DOGHECHE E., WALLART X., CHAZELAS J.
      Electron. Lett. 45, 15 (2009) 802-803
      doi: 10.1049/el.2009.0696
    11. InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch
      CAROFF P., MESSING M.E., BORG B.M., DICK K.A., DEPPERT K., WERNERSSON L.E.
      Nanotechnology 20, 49 (2009) 495606-1-7
      doi: 10.1088/0957-4484/20/49/495606
    12. Multiple scattering effects in strain and composition analysis of nanoislands by grazing incidence x rays
      RICHARD M.I., FAVRE-NICOLIN V., RENAUD G., SCHUELLI T.U., PRIESTER C., ZHONG Z., METZGER T.H.
      Appl. Phys. Lett. 94, 1 (2009) 013112-1-3
      doi: 10.1063/1.3064157
    13. Nanowire biocompatibility in the brain – Looking for a needle in a 3D stack
      ERIKSON-LINSMEIER C., PRINZ C.N., PETTERSSON L.M.E., CAROFF P., SAMUELSON L., SCHOUENBORG J., MONTELIUS L., DADIELSEN N.
      Nano Lett. 9, 12 (2009) 4184-4190
      doi: 10.1021/nl902413x
    14. Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
      RECKINGER N., TANG X.H., BAYOT V., YAREKHA D.A., DUBOIS E., GODEY S., WALLART X., LARRIEU G., LASZCZ A., RATAJCZAK J., JACQUES P.J., RASKIN J.P.
      Appl. Phys. Lett. 94, 19 (2009) 191913-1-3
      doi: 10.1063/1.3136849
    15. The interaction particularities of nanoobjects on a solid state surface
      MARCZAK M., HOURLIER D.
      Tribologia 40, 3 (2009) 139-152
    16. Towards silicon-nanowire-structured materials by the intimate mixing of patterning the solid state and chemical reactions
      HOURLIER D., LEGRAND B., BOYAVAL C., PERROT P.
      J. Nano Res. 6 (2009) 215-224
      doi: 10.4028/www.scientific.net/JNanoR.6.215
    17. The individual core/shell silicon nanowire structure probed by Raman spectroscopy
      MARCZAK M., JUDEK J., KOZAK A., GEBICKI W., JASTREZEBKSI C., ADAMOWCIZ L., LUXEMBOURG D., HOURLIER D., MELIN T.
      European Materials Research Society Fall Meeting, E-MRS Fall 2008, Symposium J : New Opportunities and Challenges in Material Research using Phonon and Vibrational Spectra, Warsaw, Poland, september 15-19, 2008
      Phys. Status Sol. C, Curr. Top. Solid State Phys. 6, 9 (2009) 2053-2055
      doi: 10.1002/pssc.200881758
    18. UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET
      YAREKHA D.A., LARRIEU G., BREIL N., DUBOIS E., GODEY S., WALLART X., SOYER C., REMIENS D., RECKINGER N., TANG X., LASZCZ A., RATAJCZAK J., HALIMAOUI A.
      215th ECS Meeting , Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS, San Francisco, CA, USA, may 24-29, 2009
      ECS Trans. 19, 1 (2009) 339-344
      doi: 10.1149/1.3118961

Invited talks

    1. Metallic source/drain architecture for advanced MOS technology : an overview of METAMOS results
      DUBOIS E., LARRIEU G., BREIL N., VALENTIN R., DANNEVILLE F., YAREKHA D., RECKINGER N., TANG X., HALIMAOUI A., RENGEL R., PASCUAL E., POUYDEBASQUE A., WALLART X., GODEY S., RATAJCZAK J., LASZCZ A., KATCKI J., RASKIN J.P., DAMBRINE G., CROS A., SKOTNICKI T.
      8th Symposium Diagnostics & Yield : Advanced Silicon Devices and Technologies for ULSI Era, Warsaw, Poland, june 22-24, 2009
    2. Narrow band gap III-V based-FET for ultra low power high frequency analog applications
      DAMBRINE G., BOLLAERT S., ROELENS Y., NOUDEVIWA A., DANNEVILLE F., OLIVIER A., WICHMANN N., DESPLANQUE L., WALLART X., GRAHN J., MOSCHETTI G., NILSSON P.A., MALMKVIST M., LEFEBVRE E.
      Proceedings of the 67th Device Research Conference, State College, PA, USA, june 22-24, 2009, 149-151, ISBN 978-1-4244-3528-9
      doi: 10.1109/DRC.2009.5354961
    3. Tuning crystal structure in III-V nanowires
      CAROFF P.
      4th Nanowire Growth Workshop 2009, NWG2009, Paris, France, october 26-27, 2009

Books (or book chapters)

    1. Dispositifs à matériaux petit gap pour électronique ultra-faible consommation
      BOLLAERT S., OLIVIER A., WICHMANN N., ROELENS Y., DESPLANQUE L., WALLART X., CAPPY A., DAMBRINE G.
      in La micro-nano électronique, enjeux et mutations, Leray J.L., Boudenot J.C., Gautier J. (Eds)
      ISBN 978-2-271-06829-3
      CNRS ÉDITIONS (2009) 183-186
    2. Vers l’intégration monolithique d’hétérostructures et de nanostructures III-V et Ge sur silicium pour la microélectronique et l’optoélectronique
      SAINT-GIRONS G., GENDRY M., DUMONT H., REGRENY P., CHENG J., NAJI K., VILQUIN B., NIU G., GRENET G., ROBACH Y., HOLLINGER G., PATRIARCHE G., LARGEAU L., PRIESTER C., DEVOS I.
      in La micro-nano électronique, enjeux et mutations, Leray J.L., Boudenot J.C., Gautier J. (Eds)
      ISBN 978-2-271-06829-3
      CNRS ÉDITIONS (2009) 179-182
2008

Articles

    1. Ballistic nanodevices for high frequency applications
      GARDES C., ROELENS Y., BOLLAERT S., GALLOO J.S., WALLART X., CURUTCHET A., GAQUIERE C., MATEOS J., GONZALEZ T., VASALLO B.G., BEDNARZ L., HUYNEN I.
      Int. J. Nanotechnol. 5, 6/7/8 (2008) 796-808, Special Issue on Nanotechnology in France. Part I : Cnano Nord-Ouest
      doi: 10.1504/IJNT.2008.018698
    2. Comparative Sb and As segregation at the InP on GaAsSb interface
      WALLART X., GODEY S., DOUVRY Y., DESPLANQUE L.
      Appl. Phys. Lett. 93, 12 (2008) 123119-1-3
      doi: 10.1063/1.2991299
    3. Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
      BORG M., LEFEBVRE E., MALMKVIST M., DESPLANQUE L., WALLART X., ROELENS Y., DAMBRINE G., CAPPY A., BOLLAERT S., GRAHN J.
      Solid-State Electron. 52, 5 (2008) 775-781
      doi: 10.1016/j.sse.2007.12.002
    4. Electrical characterization and small-signal modeling of InAs/AlSb HEMTs for low-noise and high-frequency applications
      MALMKVIST M., LEFEBVRE E., BORG M., DESPLANQUE L., WALLART X., DAMBRINE G., BOLLAERT S., GRAHN J.
      IEEE Trans. Microw. Theory Tech. 56, 12 (2008) 2685-2691
      doi: 10.1109/TMTT.2008.2006798
    5. Electro-absorption sampling at terahertz frequencies in III-V semiconductors
      LAMPIN J.F., DESPLANQUE L., MOLLOT F.
      C. R. Phys. 9, 2 (2008) 153-160
      doi: 10.1016/j.crhy.2008.02.001
    6. High-efficiency uni-travelling-carrier photomixer at 1.55 µm and spectroscopy application up to 1.4 THz
      BECK A., DUCOURNAU G., ZAKNOUNE M., PEYTAVIT E., AKALIN T., LAMPIN J.F., MOLLOT F., HINDLE F., YANG C., MOURET G.
      Electron. Lett. 44, 22 (2008) 1320-1322
      doi: 10.1049/el:20082219
    7. Low Schottky barrier height for ErSi2-x/n-Si contacts formed with a Ti cap
      RECKINGER N., TANG X., BAYOT V., YAREKHA D.A., DUBOIS E., GODEY S., WALLART X., LARRIEU G., LASZCZ A., RATAJCZAK J., JACQUES P.J., RASKIN J.P.
      J. Appl. Phys. 104, 10 (2008) 103523-1-9
      doi: 10.1063/1.3010305
    8. Metamorphic high electron mobility Te-doped AlInSb/GaInSb heterostructures on InP (001)
      DELHAYE G., DESPLANQUE L., WALLART X.
      J. Appl. Phys. 104, 6 (2008) 066105-1-3
      doi: 10.1063/1.2978365
    9. Silicon micromachined W-band hybrid coupler and power divider using DRIE technique
      LI Y., KIRBY P.L., OFFRANC O., PAPAPOLYMEROU J.
      IEEE Microw. Wirel. Compon. Lett. 18, 1 (2008) 22-24
      doi: 10.1109/LMWC.2007.911978
    10. Spontaneous compliance of the InP/SrTiO3 heterointerface
      SAINT-GIRONS G., PRIESTER C., REGRENY P., PATRIARCHE G., LARGEAU L., FAVRE-NICOLIN V., XU G., ROBACH Y., GENDRY M., HOLLINGER G.
      Appl. Phys. Lett. 92, 24 (2008) 241907-1-3
      doi: 10.1063/1.2944140
    11. The answer to the challenging question : is there any limit size of nanowires ?
      HOURLIER D., PERROT P.
      J. Nano Res. 4 (2008) 135-144
      doi: 10.4028/www.scientific.net/JNanoR.4.135
    12. Growth of arrays of silicon nanowires with centrosymmetric distribution over silicon substrate
      HOURLIER D., KLIMOVSKAYA A., EFREMOV A., GRIGOREV N., MOKLYAK Y., PROKOPENKO I.
      European Materials Research Society Spring Meeting, Symposium K : Nanoscale Self-Assembly and Patterning, Strasbourg, France, may 28-june 1, 2007
      Superlattices Microstruct. 44, 4-5 (2008) 362-373
      doi: 10.1016/j.spmi.2008.01.008
    13. Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of Si nanowires
      EFREMOV A., KLIMOVSKAYA A., PROKOPENKO I., MOKLYAK Y., HOURLIER D.
      European Materials Research Society Spring Meeting, Symposium M : Science and Technology of Nanotubes and Nanowires, Strasbourg, France, may 28-june 1, 2007
      Physica E 40, 7 (2008) 2446-2453
      doi: 10.1016/j.physe.2008.01.015
    14. TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography
      LINDNER J.K.N., HOURLIER D., KRAUS D., WEINL M., MELIN T., STRITZKER B.
      European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium J : Beyond silicon technology : materials and devices for post-Si CMOS, Strasbourg, France, may 26-30, 2008
      Mater. Sci. Semicond. Process. 11, 5-6 (2008) 169-174
      doi: 10.1016/j.mssp.2008.09.016

Invited talks

    1. The growth of semiconductor nanowires for research or industrial purposes
      HOURLIER D., PERROT P.
      TMS 2008 Annual Meeting, Symposium : Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials VII, New Orleans, LA, USA, march 9-13, 2008

PhD thesis

    1. Réalisation et caractérisation de photodiodes à transport unipolaire pour la génération d’ondes terahertz
      BECK A.
      Thèse de doctorat en Microondes et Microtechnologies, Université de Lille 1, 3 décembre 2008
      http://tel.archives-ouvertes.fr/tel-00366728/fr/
  • Les départements de recherche
    • Physique des nanostructures
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        • Cybelle GONCALVES
        • Michael HAKL
        • Tomáš HORÁK
        • Jean-François LAMPIN
        • Quyang LIN
        • Sergey MITRYUKOVSKIY
        • Romain PERETTI
        • Emilien PEYTAVIT
        • Oleksandr STEPANENKO
        • Joan TURUT
        • Mathias VANWOLLEGHEM
      • Research
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        • Jean-Claude DE JAEGER
        • Nicolas DEFRANCE
        • Christophe GAQUIÈRE
        • Marie LESECQ
        • Michel ROUSSEAU
      • Research
        • AlGaN/GaN HEMT thermal modeling and characterization
        • Measurement above 110GHz
        • Modelling of GaN-HEMT for high efficiency power converters
        • Nanoribbon-channel AlGaN/GaN HEMTs
        • New technological routes to improve thermal managements in GaN HEMTs
        • Power performance at 40GHz of AlGaN/GaN HEMTs on silicon substrate
        • Temperature monitoring of operating AlGaN/GaN HEMTs
    • Groupe : SILPHYDE
      • Members
      • Research
        • Simulation of nitride-based electronic devices
        • Modeling of THz sources based on Quantum Cascade Lasers
        • Study of ferroelectric nanostructures
        • Monte Carlo simulation of 2D materials for electronic and spintronic applications
    • Groupe : TELICE
      • Members
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  • Dossier quadriennal

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