EPIPHY GROUP : Publications
2019
Articles
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- Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy
PASTOREK M., OLIVIER A., LECHAUX Y., WICHMANN N., KARATSORI T., FAHED M., BUCAMP A., ADDAD A., TROADEC D., GHIBAUDO G., DESPLANQUE L., WALLART X., BOLLAERT S.
Nanotechnology 30, 3 (2019) 035301
doi: 10.1088/1361-6528/aaebbd - Buffer free InGaAs quantum well and in-plane nanostructures on InP grown by atomic hydrogen assisted MBE
BUCAMP A., COINON C., CODRON J.L., TROADEC D., WALLART X., DESPLANQUE L.
J. Cryst. Growth 512 (2019) 11-15
doi: 10.1016/j.jcrysgro.2019.01.033 - Heat treatment of commercial polydimethylsiloxane PDMS precursors: Part I. Towards conversion of patternable soft gels into hard ceramics
VENKATACHALAM S., HOURLIER D.
Ceram. Int. 45 (2019) 6255-6262
doi: 10.1016/j.ceramint.2018.12.106 - Selective area molecular beam epitaxy of InSb nanostructures on mismatched substrates
DESPLANQUE L., BUCAMP A., TROADEC D., PATRIARCHE G., WALLART X.
J. Cryst. Growth 512 (2019) 6-10
doi: 10.1016/j.jcrysgro.2019.02.012 - Synthesis of T-Nb2O5 thin-films deposited by atomic layer deposition for miniaturized electrochemical energy storage devices
OUENDI S., ARICO C., BLANCHARD F., CODRON J.L., WALLART X., TABERNA P.L., ROUSSEL P., CLAVIER L., SIMON P., LETHIEN C.
Energy Storage Mater. 16 (2019) 581-588
doi: 10.1016/j.ensm.2018.08.022 - Thermal decomposition of calcium oxalate: beyond appearances
HOURLIER D.
J. Therm. Anal. Calorim. (2019) (available online november 9, 2018 ; in press)
doi: 10.1007/s10973-018-7888-1 - Thermal stability of oleate-stabilized Gd2O2S nanoplates in inert and oxidizing atmospheres
LARQUET C., HOURLIER D., NGUYEN A.M., TORRES-PARDO A., GAUZZI A., SANCHEZ C., CARENCO S.
ChemNanoMat (2019) (available online january 18, 2019 ; in press)
doi: 10.1002/cnma.201800578 - Trap-free heterostructure of PbS nanoplatelets on InP(001) by chemical epitaxy
BIADALA L., PENG W.B., LAMBERT Y., KIM J.H., CANNESON D., HOUPPE A., BERTHE M., TROADEC D., DERESMES D., PATRIARCHE G., XU T., PI X.D., WALLART X., DELERUE C., BAYER M., XU J., GRANDIDIER B.
ACS Nano 13, 2 (2019) 1961-1967
doi: 10.1021/acsnano.8b08413 - Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III-V semiconductors
POST L.C., XU T., FRANCHINA VERGEL N.A., TADJINE A., LAMBERT Y., VAURETTE F., YAREKHA D., DESPLANQUE L., STIEVENARD D., WALLART X., GRANDIDIER B., DELERUE C., VANMAEKELBERGH D.
Nanotechnology 30, 15 (2019) 155301
doi: 10.1088/1361-6528/aafd3f
- Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy
2018
Articles
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- Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field
VIGNEAU F., ZENG Z.P., ESCOFFIER W., CAROFF P., LETURCQ R., NIQUET Y.M., RAQUET B., GOIRAN M.
Phys. Rev. B 97, 12 (2018) 125308
doi: 10.1103/PhysRevB.97.125308 - In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate
DESPLANQUE L., BUCAMP A., TROADEC D., PATRIARCHE G., WALLART X.
Nanotechnology 29, 30 (2018) 305705
doi: 10.1088/1361-6528/aac321 - On the origins of transport inefficiencies in mesoscopic networks
TOUSSAINT S., MARTINS F., FANIEL S., PALA M.G., DESPLANQUE L., WALLART X., SELLIER H., HUANT S., BAYOT V., HACKENS B.
Sci. Rep. 8 (2018) 3017
doi: 10.1038/s41598-018-21250-y - Single-channel 100 Gbit/s transmission using III-V UTC-PDs for future IEEE 802.15.3d wireless links in the 300 GHz band
CHINNI V.K., LATZEL P., ZEGAOUI M., COINON C., WALLART X., PEYTAVIT E., LAMPIN J.F., ENGENHARDT K., SZRIFTGISER P., ZAKNOUNE M., DUCOURNAU G
Electron. Lett. 54, 10 (2018) 638-640
doi: 10.1049/el.2018.0905 - Static and low frequency noise characterization of ultra-thin body InAs MOSFETs
KARATSORI T.A., PASTOREK M., THEODOROU C.G., FADJIE A., WICHMANN N., DESPLANQUE L., WALLART X., BOLLAERT S., DIMITRIADIS C.A., GHIBAUDO G
Solid-State Electron. 143 (2018) 56-61
doi: 10.1016/j.sse.2017.12.001 - Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction
RAZADO-COLAMBO I., AVILA J., VIGNAUD D., GODEY S., WALLART X., WOODRUFF D.P., ASENSIO M.C.
Sci. Rep. 8, 1 (2018) 10190
doi: 10.1038/s41598-018-28402-0 - Transport mechanisms in a puckered graphene-on-lattice
XU T., DIAZ ALVAREZ A., WEI W., ESCHIMESE D., ELIET S., LANCRY O., GALOPIN E., VAURETTE F., BERTHE M., DERESMES D., WEI B., XU J., LAMPIN J.F., PALLECCHI E., HAPPY H., VIGNAUD D., GRANDIDIER B.
Nanoscale 10, 16 (2018) 7519-7525
doi: 10.1039/C8NR00678D - Chemical nature of the anion antisite in dilute phosphide GaAs1-xPx alloy grown at low temperature
DEMONCHAUX T., SOSSOE K.K., DZAGLI M.M., NYS J.P., BERTHE M., TROADEC D., ADDAD A., VEILLEROT M., PATRIARCHE G., VON BARDELEBEN H.J., SCHNEDLER M., COINON C., LEFEBVRE I., MOHOU M.A., STIEVENARD D., LAMPIN J.F., EBERT P., WALLART X., GRANDIDIER B.
Phys. Rev. Mater. 2, 10 (2018) 104601
doi: 10.1103/PhysRevMaterials.2.104601 - Two-dimensional Rutherford-like scattering in ballistic nanodevices
TOUSSAINT S., BRUN B., FANIEL S., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B.
Phys. Rev. B 98, 7 (2018) 075310
doi: 10.1103/PhysRevB.98.075310 - Study of the oxidation at the Al2O3/GaSb interface after NH4OH and HCl/(NH4)2S passivations and O2 plasma post atomic layer deposition process
LECHAUX Y., FADJIE-DJOMKAM A.B., PASTOREK M., WALLART X., BOLLAERT S., WICHMANN N.
J. Appl. Phys. 124, 17 (2018) 175302
doi: 10.1063/1.5049571
- Anisotropic transport properties of quasiballistic InAs nanowires under high magnetic field
Invited talks
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- Mesures de flux in-situ en temps réel en épitaxie par jets moléculaire par spectrocopie d’absorption atomique modulée en longueur d’onde: application à des mesures de flux de gallium
VIGNAUD D.
Atelier du GDR PULSE « Mesures in-situ pour le contrôle de la croissance épitaxiale », Toulouse, France, 1-3 octobre, 2018
https://epicaracinsitu.sciencesconf.org/data/pages/PULSE_AtelierMesuresInsitu_LAAS_Oct2018_Dominique_Vignaud.pdf - Préparation des substrats pour la croissance sélective de nanostructures III-V
DESPLANQUE L., BUCAMP A., FAHED M., TROADEC D., PASTOREK M., FADJIE A.B., WICHMANN N., BOLLAERT S., PATRIARCHE G., WALLART X.
Atelier du GDR PULSE « préparation des substrats pour l’épitaxie », Villeneuve d’Ascq, France, 22-24 mai, 2018 - Selective area growth of III-V semiconductors using atomic hydrogen during molecular beam epitaxy
WALLART X., BUCAMP A., FAHED M., TROADEC D., PATRIARCHE G., WANG Y., RUTERANA P., ADDAD A., PASTOREK M., FADJIE A.B., VIGNAUD D., WICHMANN N., BOLLAERT S., DESPLANQUE L.
7th International Conference on Nanostructures and Nanomaterials Self-Assembly, NanoSEA 2018, Carqueiranne, France, july 2-6, 2018, paper I19-2
- Mesures de flux in-situ en temps réel en épitaxie par jets moléculaire par spectrocopie d’absorption atomique modulée en longueur d’onde: application à des mesures de flux de gallium
PhD thesis
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- Étude de semi-conducteurs III-V non-stoechiométriques pour l’échantillonnage de signaux hyperfréquences
DEMONCHAUX T.
Thèse de doctorat en Électronique, Microélectronique, Nanoélectronique et Micro-ondes, Université de Lille, 16 mai 2018
http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-466824
- Étude de semi-conducteurs III-V non-stoechiométriques pour l’échantillonnage de signaux hyperfréquences
2017
Articles
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- 0-π phase transition in hybrid superconductor-InSb nanowire quantum dot devices
LI S., KANG N., CAROFF P., XU H.Q.
Phys. Rev. B 95, 1 (2017) 014515
doi: 10.1103/PhysRevB.95.014515 - Ballistic transport and quantum interference in InSb nanowire devices
LI S., HUANG G.Y., GUO J.K., KANG N., CAROFF P., XU H.Q.
Chin. Phys. B 26, 2 (2017) 027305
doi: 10.1088/1674-1056/26/2/027305 - Generation of mW level in the 300-GHz band using resonant-cavity-enhanced unitraveling carrier photodiodes
LATZEL P., PAVANELLO F., BILLET M., BRETIN S., BECK A., VANWOLLEGHEM M., COINON C., WALLART X., PEYTAVIT E., DUCOURNAU G., ZAKNOUNE M., LAMPIN J.F.
IEEE Trans. Terahertz Sci. Technol. 7, 6 (2017) 800-807
doi: 10.1109/TTHZ.2017.2756059 - High performance heterostructure low barrier diodes for sub-THz detection
NADAR S., ZAKNOUNE M., WALLART X., COINON C., PEYTAVIT E., DUCOURNAU G., GAMAND F., THIRAULT M., WERQUIN M., JONNIAU S., THOUVENIN N., GAQUIERE C., VELLAS N., LAMPIN J.F.
IEEE Trans. Terahertz Sci. Technol. 7, 6 (2017) 780-788
doi: 10.1109/TTHZ.2017.2755503 - Large area growth of vertically aligned luminescent MoS2 nanosheets
DEOKAR G., RAJPUT N.S., VANCSO P., RAVAUX F., JOUIAD M., VIGNAUD D., CECCHET F., COLOMER J.F.
Nanoscale 9, 1 (2017) 277-287
doi: 10.1039/C6NR07965B - Morphology and valence band offset of GaSb quantum dots grown on GaP (001) and their evolution upon capping
DESPLANQUE L., COINON C., TROADEC D., RUTERANA P., PATRIARCHE G., BONATO L., BIMBERG D., WALLART X.
Nanotechnology 28, 22 (2017) 225601
doi: 10.1088/1361-6528/aa6f41 - Net-shaped pyramidal carbon-based ceramic materials designed for terahertz absorbers
VENKATACHALAM S., DUCOURNAU G., LAMPIN J.F., HOURLIER D.
Mater. Des. 120 (2017) 1-9
doi: 10.1016/j.matdes.2017.02.002 - Optical imaging and characterization of graphene and other 2D materials using quantitative phase microscopy
KHADIR S., BON P., VIGNAUD D., GALOPIN E., McEVOY N., McCLOSKEY D., MONNERET S., BAFFOU G.
ACS Photonics 4, 12 (2017) 3130-3139
doi: 10.1021/acsphotonics.7b00845 - Polymer derived ceramics with β-eucryptite fillers: a novel processing route to negative and near zero expansion materials
FEDOROVA A., HOURLIER D., SCHEFFLER M.
Ceram. Int. 43, 5 (2017) 4483-4488
doi: 10.1016/j.ceramint.2016.12.099 - Pyrolytic conversion of organopolysiloxanes
HOURLIER D., VENKATACHALAM S., AMMAR M.R., BLUM Y.
J. Anal. Appl. Pyrolysis 123 (2017) 296-306
doi: 10.1016/j.jaap.2016.11.016 - Study of the contact and the evaporation kinetics of a thin water liquid bridge between two hydrophobic plates
PORTUGUEZ E., ALZINA A., MICHAUD P., HOURLIER D., SMITH A.
Adv. Mater. Phys. Chem. 7, 4 (2017) 99-112
doi: 10.4236/ampc.2017.74009 - Thermal conductivity of Kapton-derived carbon
VENKATACHALAM S., DEPRIESTER M., HADJ SAHRAOUI A., CAPOEN B., AMMAR M.R., HOURLIER D.
Carbon 114 (2017) 134-140
doi: 10.1016/j.carbon.2016.11.072 - V-shaped InAs/Al0.5Ga0.5Sb vertical tunnel FET on GaAs (001) substrate with ION=433 µA.µm-1 at VDS= 0.5V
CHINNI V.K., ZAKNOUNE M., COINON C., MORGENROTH L., TROADEC D., WALLART X., DESPLANQUE L.
IEEE J. Electron Devices Soc. 5, 1 (2017) 53-58
doi: 10.1109/JEDS.2016.2630499 - Threading dislocation free GaSb nanotemplates grown by selective molecular beam epitaxy on GaAs (001) for in-plane InAs nanowire integration
FAHED M., DESPLANQUE L., TROADEC D., PATRIARCHE G., WALLART X.
19th International Conference on Molecular Beam Epitaxy, MBE 2016, Montpellier, France, september 4-9, 2016
J. Cryst. Growth 477 (2017) 45-49
doi: 10.1016/j.jcrysgro.2016.12.029
- 0-π phase transition in hybrid superconductor-InSb nanowire quantum dot devices
Invited talks
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- Selective area molecular beam epitaxy for InAs-based FETs
DESPLANQUE L., FAHED M., PASTOREK M., COINON C., WICHMANN N., BOLLAERT S., WALLART X.
19th European Workshop on Molecular Beam Epitaxy, EuroMBE19, Korobitsyno, Saint Petersburg, Russia, march 19-22, 2017
- Selective area molecular beam epitaxy for InAs-based FETs
PhD thesis
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- AlGaSb/InAs vertical tunnel field effect transistors for low power electronics
CHINNI V.K.
Thèse de doctorat en Micro et Nanotechnologies, Acoustique et Télécommunications, Université de Lille 1, 28 mars 2017
http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-451443 - Polymer-derived carbon materials for terahertz wave absorption
VENKATACHALAM S.S.
Thèse de doctorat en Micro et Nanotechnologies, Acoustique et Télécommunications, Université de Lille 1, 10 février 2017
http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-451091
- AlGaSb/InAs vertical tunnel field effect transistors for low power electronics
Habilitation
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- Contribution à la croissance par épitaxie par jets moléculaires d’hétérostructures antimoniées pour des applications électroniques haute fréquence et faible consommation
DESPLANQUE L.
Habilitation à diriger des recherches en Sciences Physiques, Université de Lille 1, 19 janvier 2017
http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-462563
- Contribution à la croissance par épitaxie par jets moléculaires d’hétérostructures antimoniées pour des applications électroniques haute fréquence et faible consommation
2016
Articles
- Branched polyesters from germylated and fatty compounds
KATIR N., ANDRADE D., DAHROUCH M., DÍAZ E., GATICA N., HOURLIER D., REYES N., ZARRAGA M.
J. Chil. Chem. Soc. 61, 1 (2016) 2784-2787
doi: 10.4067/S0717-97072016000100008 - Coherent charge transport in ballistic InSb nanowire Josephson junctions
LI S., KANG N., FAN D.X., WANG L.B., HUANG Y.Q., CAROFF P., XU H.Q.
Sci. Rep. 6 (2016) 24822, 8 pages
doi: 10.1038/srep24822 - Hole localization energy of 1.18 eV in GaSb quantum dots embedded in GaP
BONATO L., FIRAT ARIKAN I., DESPLANQUE L., COINON C., WALLART X., WANG Y., RUTERANA P., BIMBERG D.
Phys. Status Solidi B-Basic Solid State Phys. 253, 10 (2016) 1877-1881
doi: 10.1002/pssb.201600274 - Kapton-derived carbon as efficient terahertz absorbers
VENKATACHALAM S., BERTIN D., DUCOURNAU G., LAMPIN J.F., HOURLIER D.
Carbon 100 (2016) 158-164
doi: 10.1016/j.carbon.2016.01.003 - Lazarevicite-type short-range ordering in ternary III-V nanowires
SCHNEDLER M., LEFEBVRE I., XU T., PORTZ V., PATRIARCHE G., NYS J.P., PLISSARD S.R., CAROFF P., BERTHE M., EISELE H., DUNIN-BORKOWSKI R.E., EBERT P., GRANDIDIER B.
Phys. Rev. B 94, 19 (2016) 195306
doi: 10.1103/PhysRevB.94.195306 - NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles
RAZADO-COLAMBO I., AVILA J., NYS J.P., CHEN C., WALLART X., ASENSIO M.C., VIGNAUD D.
Sci. Rep. 6 (2016) 27261
doi: 10.1038/srep27261 - Selective area heteroepitaxy of GaSb on GaAs (001) for in-plane InAs nanowire achievement
FAHED M., DESPLANQUE L., TROADEC D., PATRIARCHE G., WALLART X.
Nanotechnology 27, 50 (2016) 505301
doi: 10.1088/0957-4484/27/50/505301 - Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters
GIORGIS V., MORINI F., ZHU T.Q., ROBILLARD J.F., WALLART X., CODRON J.L., DUBOIS E.
J. Appl. Phys. 120, 20 (2016) 205108
doi: 10.1063/1.4968532 - Synthesis and characterization of MoS2 nanosheets
DEOKAR G., VIGNAUD D., ARENAL R., LOUETTE P., COLOMER J.F.
Nanotechnology 27, 7 (2016) 075604
doi: 10.1088/0957-4484/27/7/075604 - Twin-induced InSb nanosails: a convenient high mobility quantum system
DE LA MATA M., LETURCQ R., PLISSARD S.R., ROLLAND C., MAGEN C., ARBIOL J., CAROFF P.
Nano Lett. 16, 2 (2016) 825-833
doi: 10.1021/acs.nanolett.5b05125 - Understanding the growth mechanism of graphene on Ge/Si(001) surfaces
DABROWSKI J., LIPPERT G., AVILA J., BARINGHAUS J., COLAMBO I., DEDKOV Y.S., HERZIGER F., LUPINA G., MAULTZSCH J., SCHAFFUS T., SCHROEDER T., KOT M., TEGENKAMP C., VIGNAUD D., ASENSIO M.C.
Sci. Rep. 6 (2016) 31639
doi: 10.1038/srep31639
Invited talks
- Molecular beam epitaxy of single to few layer graphene on SiC, growth and electronic properties
VIGNAUD D., WALLART X., RAZADO-COLAMBO I., AVILA J., ASENSIO M.C.
International Conference « Graphene and Related Materials : Properties and Applications », GM 2016, Paestum, Italy, may 23-27, 2016
PhD thesis
- Selective area growth of in-plane III-V nanostructures using molecular beam epitaxy
FAHED M.
Thèse de doctorat en Micro et Nanotechnologies, Acoustique et Télécommunications, Université de Lille 1, 24 novembre 2016
http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-445799
2015
Articles
- Charge blinking statistics of semiconductor nanocrystals revealed by carbon nanotube single charge sensors
ZBYDNIEWSKA E., DUZYNSKA A., POPOFF M., HOURLIER D., LENFANT S., JUDEK J., ZDROJEK M., MELIN T.
Nano Lett. 15, 10 (2015) 6349-6356
doi: 10.1021/acs.nanolett.5b01338 - Erratum: “On the effect of δ-doping in self-switching diodes” [Appl. Phys. Lett. 105, 093505 (2014)]
WESTLUND A., IÑIGUEZ-DE-LA-TORRE I., NILSSON P.Å., GONZALEZ T., MATEOS J., SANGARE P., DUCOURNAU G., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J.
Appl. Phys. Lett. 106, 19 (2015) 199902
doi: 10.1063/1.4919884 - Formation of long single quantum dots in InSb nanowires grown by molecular beam epitaxy
FAN D.X., LI S., KANG N., CAROFF P., WANG L.B., HUANG Y.Q., DENG M.T., YU C.L., XU H.Q.
Nanoscale 7, 36 (2015) 14822-14828
doi: 10.1039/C5NR04273A - Formation of quantum dots in the potential fluctuations of InGaAs heterostructures probed by scanning gate microscopy
LIU P., MARTINS F., HACKENS B., DESPLANQUE L., WALLART X., PALA M.G., HUANT S., BAYOT V., SELLIER H.
Phys. Rev. B 91, 7 (2015) 075313
doi: 10.1103/PhysRevB.91.075313 - Graphene FETs with aluminum bottom-gate electrodes and its natural oxide as dielectrics
WEI W., ZHOU X., DEOKAR G., KIM H., BELHAJ M.M., GALOPIN E., PALLECCHI E., VIGNAUD D., HAPPY H.
IEEE Trans. Electron Devices 62, 9 (2015) 2769-2773
doi: 10.1109/TED.2015.2459657 - Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy
FAHED M., DESPLANQUE L., COINON C., TROADEC D., WALLART X.
Nanotechnology 26 , 29 (2015) 295301, 8 pages
doi: 10.1088/0957-4484/26/29/295301 - Nanochannel diodes based on InAs/Al80Ga20Sb heterostructures : fabrication and zero-bias detector properties
WESTLUND A., NILSSON P.Å., SANGARE P., DUCOURNAU G., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J.
J. Vac. Sci. Technol. B 33, 2 (2015) 021207
doi: 10.1116/1.4914314 - Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors
WESTLUND A., SANGARÉ P., DUCOURNAU G., IÑIGUEZ-DE-LA-TORRE I., NILSSON P.Å., GAQUIÈRE C., DESPLANQUE L., WALLART X., MILLITHALER J.F., GONZÁLEZ T., MATEOS J., GRAHN J.
Solid-State Electron. 104 (2015) 79-85
doi: 10.1016/j.sse.2014.11.014 - Probing the electronic properties of graphene on C-face SiC down to single domains by nanoresolved photoelectron spectroscopies
RAZADO-COLAMBO I., AVILA J., CHEN C., NYS J.P., WALLART X., ASENSIO M.C., VIGNAUD D.
Phys. Rev. B 92 , 3 (2015) 035105
doi: 10.1103/PhysRevB.92.035105 - Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires
DUBROVSKII V.G., XU T., DIAZ ALVAREZ A., LARRIEU G., PLISSARD S.R., CAROFF P., GLAS F., GRANDIDIER B.
Nano Lett. 15, 8 (2015) 5580-5584
doi: 10.1021/acs.nanolett.5b02226 - Towards high quality CVD graphene growth and transfer
DEOKAR G., AVILA J., RAZADO-COLAMBO I., CODRON J.L., BOYAVAL C., GALOPIN E., ASENSIO M.C., VIGNAUD D.
Carbon 89 (2015) 82-92
doi: 10.1016/j.carbon.2015.03.017 - Tunnel junctions in a III-V nanowire by surface engineering
NADAR S., ROLLAND C., LAMPIN J.F., WALLART X., CAROFF P., LETURCQ R.
Nano Res. 8, 3 (2015) 980-989
doi: 10.1007/s12274-014-0579-8 - Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires
XU T., WEI M.J., CAPIOD P., DIAZ ALVAREZ A., HAN X.L., TROADEC D., NYS J.P., BERTHE M., LEFEBVRE I., PATRIARCHE G., PLISSARD S.R., CAROFF P., EBERT P., GRANDIDIER B.
Appl. Phys. Lett. 107, 11 (2015) 112102
doi: 10.1063/1.4930991
Invited talks
- Optically-pumped continuous-wave terahertz sources
LATZEL P., PAVANELLO F., PEYTAVIT E., ZAKNOUNE M., DUCOURNAU G., WALLART X., LAMPIN J.F.
SPIE Photonics West 2015, Optoelectronics and Photonics Conference, OPTO 2015, Conference 9370 – Quantum Sensing and Nanophotonic Devices XII, San Francisco, CA, USA, february 7-12, 2015, Session 3 – THz Sources, paper [9370-7]
Proc. SPIE-Int. soc. opt. eng. 9370 (2015) 937008, 6 pages, ISBN 9781628414608
doi: 10.1117/12.2080756
2014
Articles
- 100nm AlSb/InAs HEMT for ultra-low-power consumption, low-noise applications
GARDÈS C., BAGUMAKO S., DESPLANQUE L., WICHMANN N., BOLLAERT S., DANNEVILLE F., WALLART X., ROELENS Y.
Sci. World J. 2014 (2014) 136340
doi: 10.1155/2014/136340 - Carbohydrate-lectin interaction on graphene-coated surface plasmon resonance (SPR) interfaces
PENEZIC A., DEOKAR G., VIGNAUD D., PICHONAT E., HAPPY H., SUBRAMANIAN P., GASPAROVIC B., BOUKHERROUB R., SZUNERITS S.
Plasmonics 9, 3 (2014) 677-683
doi: 10.1007/s11468-014-9686-3 - Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation
LEFEBVRE E., MOSCHETTI G., MALMKVIST M., DESPLANQUE L., WALLART X., GRAHN J.
Semicond. Sci. Technol. 29, 3 (2014) 035010
doi: 10.1088/0268-1242/29/3/035010 - Gold-free ternary III-V antimonide nanowire arrays on silicon: twin-free down to the first bilayer
CONESA-BOJ S., KRIEGNER D., HAN X.L., PLISSARD S.R., WALLART X., STANGL J., FONTCUBERTA I MORRAL A., CAROFF P.
Nano Lett. 14, 1 (2014) 326-332
doi: 10.1021/nl404085a - Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy
DESPLANQUE L., FAHED M., HAN X., CHINNI V.K., TROADEC D., CHAUVAT M.P., RUTERANA P., WALLART X.
Nanotechnology 25, 46 (2014) 465302
doi: 10.1088/0957-4484/25/46/465302 - InP HBT thermal management by transferring to high thermal conductivity silicon substrate
THIAM A., ROELENS Y., COINON C., AVRAMOVIC V., GRANDCHAMP B., DUCATTEAU D., WALLART X., MANEUX C., ZAKNOUNE M.
IEEE Electron Device Lett. 35, 10 (2014) 1010-1012
doi: 10.1109/LED.2014.2347256 - Magnetotransport subband spectroscopy in InAs nanowires
VIGNEAU F., PRUDKOVKIY V., DUCHEMIN I., ESCOFFIER W., CAROFF P., NIQUET Y.M., LETURCQ R., GOIRAN M., RAQUET B.
Phys. Rev. Lett. 112, 7 (2014) 076801
doi: 10.1103/PhysRevLett.112.076801 - On the effect of δ-doping in self-switching diodes
WESTLUND A., INIGUEZ-DE-LA-TORRE I., NILSSON P.A., GONZALEZ T., MATEOS J., SANGARE P., DUCOURNAU G., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J.
Appl. Phys. Lett. 105, 9 (2014) 093505
doi: 10.1063/1.4894806
Invited talks
- Carbon hybrids with polymer-derived ceramics
BLUM Y., HOURLIER D., SORRARU G.D.
38th International Conference and Expo on Advanced Ceramics and Composites, ICACC 2014, 8th International Symposium on Advanced Processing and Manufacturing Technologies for Structural and Multifunctional Materials and Systems, APMT8, Daytona Beach, FL, USA, january 27-31, 2014, paper ICACC-S8-062-2014 - Electrical characterization of semiconductor nanowires by scanning tunneling microscopy
DURAND C., CAPIOD P., BERTHE M., XU T., NYS J.P., LETURCQ R., CAROFF P., GRANDIDIER B.
SPIE Photonics West, OPTO, Conference 8996 – Quantum Dots and Nanostructures : Synthesis, Characterization, and Modeling XI, San Francisco, CA, USA, februay 1-6, 2014, session 4, paper 8996-11
Proc. SPIE-Int. soc. opt. eng. 8996 (2014) 89960E, 10 pages
doi: 10.1117/12.2042767 - High frequency electronic devices : impact of beyond graphene materials
HAPPY H., MELE D., COLAMBO I., KHENISSA M.S., BELHAJ M.M., PALLECCHI E., OUERGHI A., VIGNAUD D., DAMBRINE G.
62nd IEEE MTT-S International Microwave Symposium, IMS 2014, Workshop WFK – Beyond Graphene Electronic Devices and their Potential for High-Frequency Applications, Tampa, FL, USA, june 1-6, 2014
2013
Articles
- Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface
WANG Y., RUTERANA P., CHEN J., KRET S., EL KAZZI S., GENEVOIS C., DESPLANQUE L., WALLART X.
ACS Appl. Mater. Interfaces 5, 19 (2013) 9760-9764
doi: 10.1021/am4028907 - Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
CAPIOD P., XU T., NYS J.P., BERTHE M., PATRIARCHE G., LYMPERAKIS L., NEUGEBAUER J., CAROFF P., DUNIN-BORKOWSKI R.E., EBERT P., GRANDIDIER B.
Appl. Phys. Lett. 103, 12 (2013) 122104
doi: 10.1063/1.4821293 - Coherent tunnelling across a quantum point contact in the quantum Hall regime
MARTINS F., FANIEL S., ROSENOW B., SELLIER H., HUANT S., PALA M.G., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B.
Sci. Rep. 3 (2013) 1416
doi: 10.1038/srep01416 - DC, RF and noise performance of InAs/AlSb HEMTs with in situ CVD SiNx-film for early-protection against oxidation
MOSCHETTI G., LEFEBVRE E., FAGERLIND M., NILSSON P.A., DESPLANQUE L., WALLART X., GRAHN J.
Solid-State Electron. 87 (2013) 85-89
doi: 10.1016/j.sse.2013.06.008 - Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene
GODEL F., PICHONAT E., VIGNAUD D., MAJJAD H., METTEN D., HENRY Y., BERCIAUD S., DAYEN J.F., HALLEY D.
Nanotechnology 24, 47 (2013) 475708
doi: 10.1088/0957-4484/24/47/475708 - Exploring electronic structure of one-atom thick polycrystalline graphene films: a nano angle resolved photoemission study
AVILA J., RAZADO I., LORCY S., FLEURIER R., PICHONAT E., VIGNAUD D., WALLART X., ASENSIO M.C.
Sci. Rep. 3 (2013) 2439
doi: 10.1038/srep02439 - High-resolution angle-resolved photoemission spectroscopy study of monolayer and bilayer graphene on the C-face of SiC
MOREAU E., GODEY S., WALLART X., RAZADO-COLAMBO I., AVILA J., ASENSIO M.C., VIGNAUD D.
Phys. Rev. B 88, 7 (2013) 075406
doi: 10.1103/PhysRevB.88.075406 - Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
ROLLAND C., CAROFF P., COINON C., WALLART X., LETURCQ R.
Appl. Phys. Lett. 102, 22 (2013) 223105
doi: 10.1063/1.4809576 - Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor
SHI M., SAINT-MARTIN J., BOURNEL A., QUERLIOZ D., DOLLFUS P., MO J.J., WICHMANN N., DESPLANQUE L., WALLART X., DANNEVILLE F., BOLLAERT S.
J. Nanosci. Nanotechnol. 13, 2 (2013) 771-775
doi: 10.1166/jnn.2013.6115 - Persistent enhancement of the carrier density in electron irradiated InAs nanowires
DURAND C., BERTHE M., MAKOUDI Y., NYS J.P., LETURCQ R., CAROFF P., GRANDIDIER B.
Nanotechnology 24, 27 (2013) 275706
doi: 10.1088/0957-4484/24/27/275706 - Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon
ALARCON-LLADO E., CONESA-BOJ S., WALLART X., CAROFF P., FONTCUBERTA I MORRAL A.
Nanotechnology 24, 40 (2013) 405707
doi: 10.1088/0957-4484/24/40/405707 - Scanning gate spectroscopy of transport across a quantum Hall nano-island
MARTINS F., FANIEL S., ROSENOW B., PALA M.G., SELLIER H., HUANT S., DESPLANQUE L., WALLART X., BAYOT V., HACKENS B.
New J. Phys. 15, 1 (2013) 013049
doi: 10.1088/1367-2630/15/1/013049 - Terahertz detection in zero-bias InAs self-switching diodes at room temperature
WESTLUND A., SANGARE P., DUCOURNAU G., NILSSON P.A., GAQUIERE C., DESPLANQUE L., WALLART X., GRAHN J.
Appl. Phys. Lett. 103, 13 (2013) 133504
doi: 10.1063/1.4821949 - The source of the threading dislocation in GaSb/GaAs hetero-structures and their propagation mechanism
WANG Y., RUTERANA P., KRET S., EL KAZZI S., DESPLANQUE L., WALLART X.
Appl. Phys. Lett. 102, 5 (2013) 052102
doi: 10.1063/1.4790296 - True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications
MOSCHETTI G., ABBASI M., NILSSON P.A., HALLEN A., DESPLANQUE L., WALLART W., GRAHN J.
Solid-State Electron. 79 (2013) 268-273
doi: 10.1016/j.sse.2012.06.013
Invited talks
- Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces
CAPIOD P., XU T., NYS J.P., BERTHE M., PATRIARCHE G., LYMPERAKIS L., NEUGEBAUER J., CAROFF P., DUNIN-BORKOWSKI R., EBERT P., GRANDIDIER B.
4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, SemiconNano 2013, Lake Arrowhead, CA, USA, september 29-october 4, 2013 - MBE of graphene
VIGNAUD D.
17th European Molecular Beam Epitaxy Workshop, Euro MBE 2013, Levi, Finland, march 10-13, 2013
Books (or book chapters)
- Graphene growth by molecular beam epitaxy
VIGNAUD D., MOREAU E.
in Molecular beam epitaxy, Henini M. (Ed)
ISBN 978-0-12-387839-7
Elsevier (2013) chapter 23, 547-557
doi: 10.1016/B978-0-12-387839-7.00023-3
2012
Articles
-
- AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
DESPLANQUE L., EL KAZZI S., CODRON J.L., WANG Y., RUTERANA P., MOSCHETTI G., GRAHN J., WALLART X.
Appl. Phys. Lett. 100, 26 (2012) 262103-1-4
doi: 10.1063/1.4730958 - Anomalous zero-bias conductance peak in a Nb-InSb nanowire-Nb hybrid device
DENG M.T., YU C.L., HUANG G.Y., LARSSON M., CAROFF P., XU H.Q.
Nano Lett. 12, 12 (2012) 6414-6419
doi: 10.1021/nl303758w - Combinatorial approaches to understanding polytypism in III-V nanowires
JOHANSSON J., BOLINSSON J., EK M., CAROFF P., DICK K.A.
ACS Nano 6, 7 (2012) 6142-6149
doi: 10.1021/nn301477x - Cryogenic InAs/AlSb HEMT wideband low-noise IF amplifier for ultra-low-power applications
MOSCHETTI G., WADEFALK N., NILSSON P.A., ABBASI M., DESPLANQUE L., WALLART X., GRAHN J.
IEEE Microw. Wirel. Compon. Lett. 22, 3 (2012) 144-146
doi: 10.1109/LMWC.2011.2182637 - Demonstration of defect-free and composition tunable GaxIn1-xSb nanowires
GHALAMESTANI S.G., EK M., GANJIPOUR B., THELANDER C., JOHANSSON J., CAROFF P., DICK K.A.
Nano Lett. 12, 9 (2012) 4914-4919
doi: 10.1021/nl302497r - Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy
THELANDER C., CAROFF P., PLISSARD S., DICK K.A.
Appl. Phys. Lett. 100, 23 (2012) 232105-1-4
doi: 10.1063/1.4726037 - Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques
XU T., DICK K.A., PLISSARD S., NGUYEN T.H., MAKOUDI Y., BERTHE M., NYS J.P., WALLART X., GRANDIDIER B., CAROFF P.
Nanotechnology 23, 9 (2012) 095702-1-9
doi: 10.1088/0957-4484/23/9/095702 - Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces
WANG Y., RUTERANA P., DESPLANQUE L., EL KAZZI S., WALLART X.
EPL-Europhys. Lett. 97, 6 (2012) 68011-1-6
doi: 10.1209/0295-5075/97/68011 - Interplay between Sb flux and growth temperature during the formation of GaSb islands on GaP
EL KAZZI S., DESPLANQUE L., WALLART X., WANG Y., RUTERANA P.
J. Appl. Phys. 111, 12 (2012) 123506-1-5
doi: 10.1063/1.4729548 - Investigation of indium nitride for micro-nanotechnology
GOKARNA A., LAMPIN J.F., VIGNAUD D., DOGHECHE E., DECOSTER D., RUFFENACH S., BRIOT O., MORET M.
Int. J. Nanotechnol. 9 , 10-12 (2012) 900-906
doi: 10.1504/IJNT.2012.049454 - Mechanism of formation of the misfit dislocations at the cubic materials interfaces
WANG Y., RUTERANA P., KRET S., CHEN J., EL KAZZI S., DESPLANQUE L., WALLART X.
Appl. Phys. Lett. 100 , 26 (2012) 262110-1-5
doi: 10.1063/1.4731787 - Monolithic integration of high electron mobility InAs-based heterostructure on exact (001) silicon using a GaSb/GaP accommodation layer
DESPLANQUE L., EL KAZZI S., COINON C., ZIEGLER S., KUNERT B., BEYER A., VOLZ K., STOLZ W., WANG Y., RUTERANA P., WALLART X.
Appl. Phys. Lett. 101, 14 (2012) 142111-1-4
doi: 10.1063/1.4758292 - Planar InAs/AlSb HEMTs with ion-implanted isolation
MOSCHETTI G., NILSSON P.A., HALLEN A., DESPLANQUE L., WALLART X., GRAHN J.
IEEE Electron Device Lett. 33, 4 (2012) 510-512
doi: 10.1109/LED.2012.2185480 - Polarization-dependent light extinction in ensembles of polydisperse vertical semiconductor nanowires: a Mie scattering effective medium
GRZELA G., HOURLIER D., GOMEZ-RIVAS J.
Phys. Rev. B 86, 4 (2012) 045305-1-7
doi: 10.1103/PhysRevB.86.045305 - Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy
WANG Y., RUTERANA P., CHEN J., DESPLANQUE L., EL KAZZI S., WALLART X.
J. Phys.-Condens. Matter 24, 33 (2012) 335802-1-7
doi: 10.1088/0953-8984/24/33/335802 - Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction
NILSSON H., SAMUELSSON P., CAROFF P., XU H.Q.
Nano Lett. 12, 1 (2012) 228-233
doi: 10.1021/nl203380w - Surface and intrinsic conduction properties of Au-catalyzed Si nanowires
BOROWIK L., FLOREA I., DERESMES D., ERSEN O., HOURLIER D., MELIN T.
J. Phys. Chem. C 116, 11 (2012) 6601-6607
doi: 10.1021/jp300816e - Transport inefficiency in branched-out mesoscopic networks: an analog of the Braess paradox
PALA M.G., BALTAZAR S., LIU P., SELLIER H., HACKENS B., MARTINS F., BAYOT V., WALLART X., DESPLANQUE L., HUANT S.
Phys. Rev. Lett. 108, 7 (2012) 076802-1-5
doi: 10.1103/PhysRevLett.108.076802 - Vertical III-V V-shaped nanomembranes epitaxially grown on a patterned Si[001] substrate and their enhanced light scattering
CONESA-BOJ S., RUSSO-AVERCHI E., DALMAU-MALLORQUI A., TREVINO J., PECORA E.F., FORESTIERE C., HANDIN A., EK M., ZWEIFEL L., WALLENBERG L.R., RÜFFER D., HEISS M., TROADEC D., DAL NEGRO L., CAROFF P., FONTCUBERTA I MORRAL A.
ACS Nano 6, 12 (2012) 10982-10991
doi: 10.1021/nn304526k
- AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
Invited talks
-
- Carbon electronics for high frequency applications
HAPPY H., MENG N., PICHONAT E., LEPILLIET S., DAMBRINE G., VIGNAUD D., SIRE C., ARDIACA F., DERYCKE D.
2nd International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2012, Xi’an, China, august 29-september 1, 2012 - Graphene growth and synthesis
VIGNAUD D.
European Microwave Week, EuMC/EuMIC, Workshop W16 : Graphene RF Nanoelectronics, Amsterdam, The Netherlands, october 28-november 2, 2012 - Graphene on SiC : from graphitization to molecular beam epitaxy
VIGNAUD D.
21st European Workshop on Heterostructure Technology, HeTech 2012, Barcelona, Spain, november 5-7, 2012 - Inorganic one-dimensional nanostructured materials
HOURLIER D.
2nd International Conference on Competitive Materials and Technology Processes, IC-CMTP2, Miskolc-Lillafüred, Hungary, october 8-12, 2012, 16-16, ISBN 978-963-08-4874-9 - LT GaAs nanophotoswitches for microwave sampling
DECOSTER D., PAGIES A., LAMPIN J.F., WALLART X., MAGNIN V., HARARI J., TRIPON-CANSELIET C., FACI S., FORMONT S., MENAGER L., CHAZELAS J., JESTIN G.
SPIE 2012 Photonics West, Quantum Sensing and Nanophotonic Devices IX, San Francisco, CA, USA, january 21-26, 2012, Paper 8268-83
- Carbon electronics for high frequency applications
Books (or book chapters)
-
- Carbon electronics for high-frequency applications
HAPPY H., NOUGARET L., MENG N., PICHONAT E., DERYCKE V., VIGNAUD D., DAMBRINE G.
in Carbon nanotubes and their applications, Zhang Q. (Ed)
ISBN 978-981-4241-90-8 ; e-ISBN 978-981-4303-18-7
Pan Stanford Publishing (2012) chapter 6, 203-220
http://books.google.fr/books?isbn=9814241903
- Carbon electronics for high-frequency applications
PhD thesis
-
- Croissance épitaxiale d’hétérostructures antimoniées sur substrats fortement désadaptés en maille pour application aux transistors à effet de champ
EL KAZZI S.
Thèse de doctorat en Micro et Nanotechnologies, Acoustique et Télécommunications, Université de Lille 1, 13 novembre 2012
http://ori.univ-lille1.fr/notice/view/univ-lille1-ori-117932
- Croissance épitaxiale d’hétérostructures antimoniées sur substrats fortement désadaptés en maille pour application aux transistors à effet de champ
2011
Articles
-
- [Invited paper] Crystal phases in III-V nanowires: from random toward engineered polytypism
CAROFF P., BOLINSSON J., JOHANSSON J.
IEEE J. Sel. Top. Quantum Electron. 17, 4 (2011) 829-846
doi: 10.1109/JSTQE.2010.2070790 - [Invited paper] InSb nanowire field-effect transistors and quantum-dot devices
NILSSON H.A., DENG M.T., CAROFF P., THELANDER C., SAMUELSON L., WERNERSSON L.E., XU H.Q.
IEEE J. Sel. Top. Quantum Electron. 17, 4 (2011) 907-914
doi: 10.1109/JSTQE.2010.2090135 - [Invited] Scanning-gate microscopy of semiconductor nanostructures : an overview
MARTINS F., HACKENS B., SELLIER H., LIU P., PALA M.G., BALTAZAR S., DESPLANQUE L., WALLART X., BAYOT V., HUANT S.
Acta Phys. Pol. A 119, 5 (2011) 569-575
http://przyrbwn.icm.edu.pl/APP/ABSTR/119/a119-5-1.html - Characterization of ion/electron beam induced deposition of electrical contacts at the sub-μm scale
BRUNEL D., TROADEC D., HOURLIER D., DERESMES D., ZDROJEK M., MELIN T.
Microelectron. Eng. 88, 7 (2011) 1569-1572
doi: 10.1016/j.mee.2011.03.011 - Effects of crystal phase mixing on the electrical properties of InAs nanowires
THELANDER C., CAROFF P., PLISSARD S., DEY A.W., DICK K.A.
Nano Lett. 11, 6 (2011) 2424-2429
doi: 10.1021/nl2008339 - Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor
MENG N., FERNANDEZ J.F., VIGNAUD D., DAMBRINE G., HAPPY H.
IEEE Trans. Electron Devices 58, 6 (2011) 1594-1596
doi: 10.1109/TED.2011.2119486 - High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning
PLISSARD S., LARRIEU G., WALLART X., CAROFF P.
Nanotechnology 22, 27 (2011) 275602-1-7
doi: 10.1088/0957-4484/22/27/275602 - InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
MOSCHETTI G., WADEFALK N., NILSSON P.A., ROELENS Y., NOUDEVIWA A., DESPLANQUE L., WALLART X., DANNEVILLE F., DAMBRINE G., BOLLAERT S., GRAHN J.
Solid-State Electron. 64, 1 (2011) 47-53
doi: 10.1016/j.sse.2011.06.048 - Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy
FERRER F.J., MOREAU E., VIGNAUD D., DERESMES D., GODEY S., WALLART X.
J. Appl. Phys. 109, 5 (2011) 054307-1-6
doi: 10.1063/1.3560896 - Investigation of the anisotropic strain relaxation in GaSb islands on GaP
WANG Y., RUTERANA P., LEI H.P., CHEN J., KRET S., EL KAZZI S., DESPLANQUE L., WALLART X.
J. Appl. Phys. 110, 4 (2011) 043509-1-8
doi: 10.1063/1.3622321 - On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations
SELLIER H., HACKENS B., PALA M.G., MARTINS F., BALTAZAR S., WALLART X., DESPLANQUE L., BAYOT V., HUANT S.
Semicond. Sci. Technol. 26, 06 (2011) 064008-1-10
doi: 10.1088/0268-1242/26/6/064008 - Size-dependent catalytic and melting properties of platinum-palladium nanoparticles
GUISBIERS G., ABUDUKELIMU G., HOURLIER D.
Nanoscale Res. Lett. 6, 1 (2011) 396-1-5
doi: 10.1186/1556-276X-6-396 - Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness
WANG Y., RUTERANA P., DESPLANQUE L., EL KAZZI S., WALLART X.
J. Appl. Phys. 109, 2 (2011) 023509-1-6
doi: 10.1063/1.3532053 - Thermal conductivity of indium arsenide nanowires with wurtzite and zinc blende phases
ZHOU F., MOORE A.L., BOLINSSON J., PERSSON A., FRÖBERG L., PETTES M.T., KONG H., RABENBERG L., CAROFF P., STEWART D.A., MINGO N., DICK K.A., SAMUELSON L., LINKE H., SHI L.
Phys. Rev. B 83, 20 (2011) 205416-1-10
doi: 10.1103/PhysRevB.83.205416 - Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors
NILSSON H.A., CAROFF P., LIND E., PISTOL M.E., THELANDER C., WERNERSSON L.E.
J. Appl. Phys. 110, 6 (2011) 064510-1-4
doi: 10.1063/1.3633742 - Unit cell structure of crystal polytypes in InAs and InSb nanowires
KRIEGNER D., PANSE C., MANDL B., DICK K.A., KEPLINGER M., PERSSON J.M., CAROFF P., ERCOLANI D., SORBA L., BECHSTEDT F., STANGL J., BAUER G.
Nano Lett. 11, 4 (2011) 1483-1489
doi: 10.1021/nl1041512 - Wurtzite-zincblende superlattices in InAs nanowires using a supply interruption method
BOLINSSON J., CAROFF P., MANDL B., DICK K.A.
Nanotechnology 22, 26 (2011) 265606-1-10
doi: 10.1088/0957-4484/22/26/265606 - Compliance at the GaSb/GaP interface by misfit dislocations array
EL KAZZI S., DESPLANQUE L., COINON C., WANG Y., RUTERANA P., WALLART X.
1st Mediterranean Conference on Innovative Materials and Applications, CIMA 2011, Beirut, Lebanon, march 15-17, 2011
Adv. Mater. Res. 324 (2011) 85-88
doi: 10.4028/www.scientific.net/AMR.324.85 - Parameter space mapping of InAs nanowire crystal structure
DICK K.A., BOLINSSON J., MESSING M.E., LEHMANN S., JOHANSSON J., CAROFF P.
38th Conference on the Physics and Chemistry of Surfaces and Interfaces, PCSI-38, San Diego, CA, USA, january 16-20, 2011
J. Vac. Sci. Technol. B 29, 4 (2011) 04D103-1-9
doi: 10.1116/1.3593457 - Scanning confocal Raman spectroscopy of silicon phase distribution in individual Si nanowires
NIKOLENKO A., STRELCHUK V., KLIMOVSKAYA A., LYTVYN P., VALAKH M., PEDCHENKO Y., VOROSCHENKO A., HOURLIER D.
European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium J : Silicon-based nanophotonics, Strasbourg, France, june 7-11, 2010
Phys. Status Sol. C, Curr. Top. Solid State Phys. 8, 3 (2011) 1012-1016
doi: 10.1002/pssc.201000409 - Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
ASTROMSKAS G., STORM K., CAROFF P., BORGSTRÖM M., LIND E., WERNERSSON L.E.
European Materials Research Society Spring Meeting, E-MRS Spring 2010, Symposium H : Post-Si-CMOS electronic devices : the role of Ge and III-V materials, Strasbourg, France, june 7-11, 2010
Microelectron. Eng. 88, 4 (2011) 444-447
doi: 10.1016/j.mee.2010.08.010
- [Invited paper] Crystal phases in III-V nanowires: from random toward engineered polytypism
Invited talks
-
- Crystal phase engineering in III-As(-Sb) single nanowires
CAROFF P., PLISSARD D., BOLINSSON J., DICK K.A.
Villa Conference on Interactions among Nanostructures, VCIAN 2011, Las Vegas, NV, USA, april 21-25, 2011 - Polytypism in III-V nanowires
LEHMANN S., DICK K.A., JOHANSSON J., CAROFF P., BOLINSSON J., MESSING M.E., JACOBSSON D., DEPPERT K., SAMUELSON L.
3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, SemiconNano 2011, Traunkirchen, Austria, september 11-16, 2011 - Graphene growth (for device applications)
VIGNAUD D.
41st European Solid-State Device Research Conference, ESSDERC 2011, Tutorial on Graphene and its Potential Applications, Helsinki, Finland, september 12-16, 2011
- Crystal phase engineering in III-As(-Sb) single nanowires
PhD thesis
-
- Elaboration de graphène par épitaxie par jets moléculaires et caractérisations
MOREAU E.
Thèse de doctorat en Micro et Nanotechnologies, Acoustique et Télécommunication, Université de Lille 1, 9 décembre 2011
http://tel.archives-ouvertes.fr/tel-00665851
- Elaboration de graphène par épitaxie par jets moléculaires et caractérisations
2010
Articles
- [Invited paper] Control of III-V nanowire crystal structure by growth parameter tuning
DICK K.A., CAROFF P., BOLINSSON J., MESSING M.E., JOHANSSON J., DEPPERT K., WALLENBERG L.R., SAMUELSON L.
Semicond. Sci. Technol. 25, 2 (2010) 024009-1-1
doi: 10.1088/0268-1242/25/2/024009 - 60 GHz current gain cut-off frequency graphene nanoribbon FET
MENG N., FERRER F.J., VIGNAUD D., DAMBRINE G., HAPPY H.
Int. J. Microw. Wirel. Technol. 2, 5 (2010) 441-444
doi: 10.1017/S175907871000070X - Anisotropic transport properties in InAs/AlSb heterostructures
MOSCHETTI G., ZHAO H., NILSSON P.A., WANG S., KALABUKHOV A., DAMBRINE G., BOLLAERT S., DESPLANQUE L., WALLART X., GRAHN J.
Appl. Phys. Lett. 97, 24 (2010) 243510-1-3
doi: 10.1063/1.3527971 - Au-Si and Au-Ge phases diagrams for nanosytems
HOURLIER D., PERROT P.
Mater. Sci. Forum 653 (2010) 77-85
doi: 10.4028/www.scientific.net/MSF.653.77 - Correlation-induced conductance suppression at level degeneracy in a quantum dot
NILSSON H.A., KARLSTRÖM O., LARSSON M., CAROFF P., PEDERSEN J.N., SAMUELSON L., WACKER A., WERNERSSON L.E., XU H.Q.
Phys. Rev. Lett. 104, 18 (2010) 186804-1-4
doi: 10.1103/PhysRevLett.104.186804 - Crystal phase engineering in single InAs nanowires
DICK K.A., THELANDER C., SAMUELSON L., CAROFF P.
Nano Lett. 10, 9 (2010) 3494-3499
doi: 10.1021/nl101632a - Diameter dependence of the wurtzite-zinc blende transition in InAs nanowires
JOHANSSON J., DICK K.A., CAROFF P., MESSING M.E., BOLINSSON J., DEPPERT K., SAMUELSON L.
J. Phys. Chem. C 114, 9 (2010) 3837-3842
doi: 10.1021/jp910821e - Doping incorporation in InAs nanowires characterized by capacitance measurements
ASTROMSKAS G., STORM K., KARLSTRÖM O., CAROFF P., BORGSTRÖM M., WERNERSSON L.E.
J. Appl. Phys. 108, 5 (2010) 054306-1-5
doi: 10.1063/1.3475356 - Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure
DESPLANQUE L., VIGNAUD D., GODEY S., CADIO E., PLISSARD S., WALLART X., LIU P., SELLIER H.
J. Appl. Phys. 108, 4 (2010) 043704-1-6
doi: 10.1063/1.3475709 - Frequency dependent rotation and translation of nanowires in liquid environment
MARCZAK M., HOURLIER D., MELIN T., ADAMOWICZ L., DIESINGER H.
Appl. Phys. Lett. 96, 23 (2010) 233502-1-3
doi: 10.1063/1.3430738 - Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer
PLISSARD S., COINON C., ANDROUSSI Y., WALLART X.
J. Appl. Phys. 107, 1 (2010) 016102-1-3
doi: 10.1063/1.3275872 - GaSb/GaP compliant interface for high electron mobility AlSb/InAs heterostructures on (001) GaP
EL KAZZI S., DESPLANQUE L., COINON C., WANG Y., RUTERANA P., WALLART X.
Appl. Phys. Lett. 97, 19 (2010) 192111-1-3
doi: 10.1063/1.3515867 - Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
PLISSARD S., DICK K.A., WALLART X., CAROFF P.
Appl. Phys. Lett. 96, 12 (2010) 121901-1-3
doi: 10.1063/1.3367746 - Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
PLISSARD S., DICK K.A., LARRIEU G., GODEY S., ADDAD A., WALLART X., CAROFF P.
Nanotechnology 21, 38 (2010) 385602-1-8
doi: 10.1088/0957-4484/21/38/385602 - Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential
LAMPIN E., PRIESTER C., KRZEMINSKI C., MAGAUD L.
J. Appl. Phys. 107, 10 (2010) 103514-1-7
doi: 10.1063/1.3357297 - Graphene growth by molecular beam epitaxy on the carbon-face of SiC
MOREAU E., GODEY S., FERRER F.J., VIGNAUD D., WALLART X., AVILA J., ASENSIO M.C., BOURNEL F., GALLET J.J.
Appl. Phys. Lett. 97, 24 (2010) 241907-1-3
doi: 10.1063/1.3526720 - Imaging Coulomb islands in a quantum Hall interferometer
HACKENS B., MARTINS F., FANIEL S., DUTU C.A., SELLIER H., HUANT S., PALA M., DESPLANQUE L., WALLART X., BAYOT V.
Nat. Commun. 1 (2010) 39-1-6
doi: 10.1038/ncomms1038 - Improvement of ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 Å heterojunction bipolar transistors
MAIRIAUX E., DESPLANQUE L., WALLART X., ZAKNOUNE M.
J. Vac. Sci. Technol. B 28, 1 (2010) 17-20
doi: 10.1116/1.3268134 - Microwave performance of InAlAsSb/In0.35Ga0.65Sb/InAlAsSb double heterojunction bipolar transistors
MAIRIAUX E., DESPLANQUE L., WALLART X., ZAKNOUNE M.
IEEE Electron Device Lett. 31, 4 (2010) 299-301
doi: 10.1109/LED.2010.2040241 - Picosecond carrier lifetime in low-temperature-grown GaAsSb
WALLART X., COINON C., PLISSARD S., GODEY S., OFFRANC O., ANDROUSSI Y., MAGNIN V., LAMPIN J.F.
Appl. Phys. Express 3, 11 (2010) 111202-1-3
doi: 10.1143/APEX.3.111202 - Sb-HEMT: toward 100-mV cryogenic electronics
NOUDEVIWA A., ROELENS Y., DANNEVILLE F., OLIVIER A., WICHMANN N., WALDHOFF N., LEPILLIET S., DAMBRINE G., DESPLANQUE L., WALLART X., MOSCHETTI G., GRAHN J., BOLLAERT S.
IEEE Trans. Electron Devices 57, 8 (2010) 1903-1909
doi: 10.1109/TED.2010.2050109 - Temperature dependent properties of InSb and InAs nanowire field-effect transistors
NILSSON H.A., CAROFF P., THELANDER C., LIND E., KARLSTRÖM O., WERNERSSON L.E.
Appl. Phys. Lett. 96, 15 (2010) 153505-1-3
doi: 10.1063/1.3402760 - The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors
THELANDER C., DICK K.A., BORGSTRÖM M.T., FRÖBERG L.E., CAROFF P., NILSSON H.A., SAMUELSON L.
Nanotechnology 21, 20 (2010) 205703-1-9
doi: 10.1088/0957-4484/21/20/205703 - Graphene growth by molecular beam epitaxy using a solid carbon source
MOREAU E., FERRER F.J., VIGNAUD D., GODEY S., WALLART X.
12th International Conference on the Formation of Semiconductor Interfaces, ICFSI-12, Weimar, Germany, july 5-10, 2009
Phys. Status Solidi A-Appl. Mat. Sci. 207, 2 (2010) 300-303
doi: 10.1002/pssa.200982412 - Towards the 3-D microfabrication and integration of a complete power unit used for energy autonomous wireless system
PICHONAT T., LETHIEN C., HOURLIER D., TIERCELIN N., TROADEC D., ROLLAND P.A.
216th Electrochemical Sociaty Meeting, Battery/Energy Technology Joint General Session, Vienna, Austria, october 4-9, 2009
ECS Trans. 25, 35 (2010) 11-21
doi: 10.1149/1.3414000
Invited talks
- MBE growth of antimony-based heterostructures for microelectronic applications
WALLART X., DESPLANQUE L., VIGNAUD D., PLISSARD S., DELHAYE G., YAREKHA D., BOLLAERT S., ROELENS Y., NOUDEVIWA A., DANNEVILLE F., OLIVIER A., WICHMANN N., ZAKNOUNE M., MAIRIAUX E., DAMBRINE G., GRAHN J., MOSCHETTI G., NILSSON P.A., MALMKVIST M., LEFEBVRE E.
10th Expert Evaluation & Control of Compound Semiconductor Materials & Technologies, EXMATEC 2010, Darmstadt/Seeheim, Germany, may 19-21, 2010 - Scanning-gate microscopy of semiconductor nanostructures : an overview
MARTINS F., HACKENS B., SELLIER H., LIU P., PALA M.G., BALTAZAR S., DESPLANQUE L., WALLART X., BAYOT V., HUANT S.
XXXIX ‘Jaszowiec’ International School and Conference on the Physics of Semiconductors, Krynica-Zdrój, Poland, june 19-24, 2010 - Wurtzite-zinc blende transition in InAs nanowires
JOHANSSON J., DICK K., CAROFF P., MESSING M., BOLINSSON J., DEPPERT K., SAMUELSON L.
15th International Conference on Metal Organic Vapor Phase Epitaxy, ICMOVPE-XV, Incline Village, NV, USA, may 23-28, 2010
2009
Articles
- 2×2 InP optical switching matrix based on carrier-induced effects for 1.55-µm applications
ZEGAOUI M., CHOUEIB N., HARARI J., DECOSTER D., MAGNIN V., WALLART X., CHAZELAS J.
IEEE Photonics Technol. Lett. 21, 19 (2009) 1357-1359
doi: 10.1109/LPT.2009.2026484 - A new low crosstalk InP digital optical switch based on carrier-induced effects for 1.55-µm applications
ZEGAOUI M., DECOSTER D., HARARI J., MAGNIN V., WALLART X., CHAZELAS J.
IEEE Photonics Technol. Lett. 21, 8 (2009) 546-548
doi: 10.1109/LPT.2009.2014646 - Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux
FERRER F.J., MOREAU E., VIGNAUD D., GODEY S., WALLART X.
Semicond. Sci. Technol. 24, 12 (2009) 125014-1-4
doi: 10.1088/0268-1242/24/12/125014 - Controlled polytypic and twin-plane superlattices in III-V nanowires
CAROFF P., DICK K.A., JOHANSSON J., MESSING M.E., DEPPERT K., SAMUELSON L.
Nat. Nanotechnol. 4, 1 (2009) 50-55
doi: 10.1038/nnano.2008.359 - Critical thickness for InAs quantum dot formation on (311)B InP substrates
CAROFF P., BERTRU N., LU W., ELIAS G., DEHAESE O., LETOUBLON A., LE CORRE A.
J. Cryst. Growth 311, 9 (2009) 2626-2629
doi: 10.1016/j.jcrysgro.2009.02.048 - Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor
WICHMANN N., VASALLO B.G., BOLLAERT S., ROELENS Y., WALLART X., CAPPY A., GONZALEZ T., PARDO D., MATEOS J.
Appl. Phys. Lett. 94, 10 (2009) 103504-1-3
doi: 10.1063/1.3095482 - Gate-recess technology for InAs/AlSb HEMTs
LEFEBVRE E., MALMKVIST M., BORG M., DESPLANQUE L., WALLART X., DAMBRINE G., BOLLAERT S., GRAHN J.
IEEE Trans. Electron Devices 56, 9 (2009) 1904-1911
doi: 10.1109/TED.2009.2026123 - Giant, level-dependent g factors in InSb nanowire quantum dots
NILSSON H.A., CAROFF P., THELANDER C., LARSSON M., WAGNER J.B., WERNERSSON L.E., SAMUELSON L., XU H.Q.
Nano Lett. 9, 9 (2009) 3151-3156
doi: 10.1021/nl901333a - Growth of vertical InAs nanowires on heterostructured substrates
RODDARO S., CAROFF P., BIASIOL G., ROSSI F., BOCCHI C., NILSSON K., FRÖBERG L., WAGNER J.B., SAMUELSON L., WERNERSSON L.E., SORBA L.
Nanotechnology 20, 28 (2009) 285303-1-6
doi: 10.1088/0957-4484/20/28/285303 - High thermally induced index variations with short response time in InP/GaInAsP/InP waveguide Schottky diodes
SAADSAOUD N., ZEGAOUI M., DECOSTER D., DOGHECHE E., WALLART X., CHAZELAS J.
Electron. Lett. 45, 15 (2009) 802-803
doi: 10.1049/el.2009.0696 - InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch
CAROFF P., MESSING M.E., BORG B.M., DICK K.A., DEPPERT K., WERNERSSON L.E.
Nanotechnology 20, 49 (2009) 495606-1-7
doi: 10.1088/0957-4484/20/49/495606 - Multiple scattering effects in strain and composition analysis of nanoislands by grazing incidence x rays
RICHARD M.I., FAVRE-NICOLIN V., RENAUD G., SCHUELLI T.U., PRIESTER C., ZHONG Z., METZGER T.H.
Appl. Phys. Lett. 94, 1 (2009) 013112-1-3
doi: 10.1063/1.3064157 - Nanowire biocompatibility in the brain – Looking for a needle in a 3D stack
ERIKSON-LINSMEIER C., PRINZ C.N., PETTERSSON L.M.E., CAROFF P., SAMUELSON L., SCHOUENBORG J., MONTELIUS L., DADIELSEN N.
Nano Lett. 9, 12 (2009) 4184-4190
doi: 10.1021/nl902413x - Schottky barrier lowering with the formation of crystalline Er silicide on n-Si upon thermal annealing
RECKINGER N., TANG X.H., BAYOT V., YAREKHA D.A., DUBOIS E., GODEY S., WALLART X., LARRIEU G., LASZCZ A., RATAJCZAK J., JACQUES P.J., RASKIN J.P.
Appl. Phys. Lett. 94, 19 (2009) 191913-1-3
doi: 10.1063/1.3136849 - The interaction particularities of nanoobjects on a solid state surface
MARCZAK M., HOURLIER D.
Tribologia 40, 3 (2009) 139-152 - Towards silicon-nanowire-structured materials by the intimate mixing of patterning the solid state and chemical reactions
HOURLIER D., LEGRAND B., BOYAVAL C., PERROT P.
J. Nano Res. 6 (2009) 215-224
doi: 10.4028/www.scientific.net/JNanoR.6.215 - The individual core/shell silicon nanowire structure probed by Raman spectroscopy
MARCZAK M., JUDEK J., KOZAK A., GEBICKI W., JASTREZEBKSI C., ADAMOWCIZ L., LUXEMBOURG D., HOURLIER D., MELIN T.
European Materials Research Society Fall Meeting, E-MRS Fall 2008, Symposium J : New Opportunities and Challenges in Material Research using Phonon and Vibrational Spectra, Warsaw, Poland, september 15-19, 2008
Phys. Status Sol. C, Curr. Top. Solid State Phys. 6, 9 (2009) 2053-2055
doi: 10.1002/pssc.200881758 - UHV fabrication of the ytterbium silicide as potential low schottky barrier S/D contact material for N-type MOSFET
YAREKHA D.A., LARRIEU G., BREIL N., DUBOIS E., GODEY S., WALLART X., SOYER C., REMIENS D., RECKINGER N., TANG X., LASZCZ A., RATAJCZAK J., HALIMAOUI A.
215th ECS Meeting , Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS, San Francisco, CA, USA, may 24-29, 2009
ECS Trans. 19, 1 (2009) 339-344
doi: 10.1149/1.3118961
Invited talks
- Metallic source/drain architecture for advanced MOS technology : an overview of METAMOS results
DUBOIS E., LARRIEU G., BREIL N., VALENTIN R., DANNEVILLE F., YAREKHA D., RECKINGER N., TANG X., HALIMAOUI A., RENGEL R., PASCUAL E., POUYDEBASQUE A., WALLART X., GODEY S., RATAJCZAK J., LASZCZ A., KATCKI J., RASKIN J.P., DAMBRINE G., CROS A., SKOTNICKI T.
8th Symposium Diagnostics & Yield : Advanced Silicon Devices and Technologies for ULSI Era, Warsaw, Poland, june 22-24, 2009 - Narrow band gap III-V based-FET for ultra low power high frequency analog applications
DAMBRINE G., BOLLAERT S., ROELENS Y., NOUDEVIWA A., DANNEVILLE F., OLIVIER A., WICHMANN N., DESPLANQUE L., WALLART X., GRAHN J., MOSCHETTI G., NILSSON P.A., MALMKVIST M., LEFEBVRE E.
Proceedings of the 67th Device Research Conference, State College, PA, USA, june 22-24, 2009, 149-151, ISBN 978-1-4244-3528-9
doi: 10.1109/DRC.2009.5354961 - Tuning crystal structure in III-V nanowires
CAROFF P.
4th Nanowire Growth Workshop 2009, NWG2009, Paris, France, october 26-27, 2009
Books (or book chapters)
- Dispositifs à matériaux petit gap pour électronique ultra-faible consommation
BOLLAERT S., OLIVIER A., WICHMANN N., ROELENS Y., DESPLANQUE L., WALLART X., CAPPY A., DAMBRINE G.
in La micro-nano électronique, enjeux et mutations, Leray J.L., Boudenot J.C., Gautier J. (Eds)
ISBN 978-2-271-06829-3
CNRS ÉDITIONS (2009) 183-186 - Vers l’intégration monolithique d’hétérostructures et de nanostructures III-V et Ge sur silicium pour la microélectronique et l’optoélectronique
SAINT-GIRONS G., GENDRY M., DUMONT H., REGRENY P., CHENG J., NAJI K., VILQUIN B., NIU G., GRENET G., ROBACH Y., HOLLINGER G., PATRIARCHE G., LARGEAU L., PRIESTER C., DEVOS I.
in La micro-nano électronique, enjeux et mutations, Leray J.L., Boudenot J.C., Gautier J. (Eds)
ISBN 978-2-271-06829-3
CNRS ÉDITIONS (2009) 179-182
2008
Articles
- Ballistic nanodevices for high frequency applications
GARDES C., ROELENS Y., BOLLAERT S., GALLOO J.S., WALLART X., CURUTCHET A., GAQUIERE C., MATEOS J., GONZALEZ T., VASALLO B.G., BEDNARZ L., HUYNEN I.
Int. J. Nanotechnol. 5, 6/7/8 (2008) 796-808, Special Issue on Nanotechnology in France. Part I : Cnano Nord-Ouest
doi: 10.1504/IJNT.2008.018698 - Comparative Sb and As segregation at the InP on GaAsSb interface
WALLART X., GODEY S., DOUVRY Y., DESPLANQUE L.
Appl. Phys. Lett. 93, 12 (2008) 123119-1-3
doi: 10.1063/1.2991299 - Effect of gate length in InAs/AlSb HEMTs biased for low power or high gain
BORG M., LEFEBVRE E., MALMKVIST M., DESPLANQUE L., WALLART X., ROELENS Y., DAMBRINE G., CAPPY A., BOLLAERT S., GRAHN J.
Solid-State Electron. 52, 5 (2008) 775-781
doi: 10.1016/j.sse.2007.12.002 - Electrical characterization and small-signal modeling of InAs/AlSb HEMTs for low-noise and high-frequency applications
MALMKVIST M., LEFEBVRE E., BORG M., DESPLANQUE L., WALLART X., DAMBRINE G., BOLLAERT S., GRAHN J.
IEEE Trans. Microw. Theory Tech. 56, 12 (2008) 2685-2691
doi: 10.1109/TMTT.2008.2006798 - Electro-absorption sampling at terahertz frequencies in III-V semiconductors
LAMPIN J.F., DESPLANQUE L., MOLLOT F.
C. R. Phys. 9, 2 (2008) 153-160
doi: 10.1016/j.crhy.2008.02.001 - High-efficiency uni-travelling-carrier photomixer at 1.55 µm and spectroscopy application up to 1.4 THz
BECK A., DUCOURNAU G., ZAKNOUNE M., PEYTAVIT E., AKALIN T., LAMPIN J.F., MOLLOT F., HINDLE F., YANG C., MOURET G.
Electron. Lett. 44, 22 (2008) 1320-1322
doi: 10.1049/el:20082219 - Low Schottky barrier height for ErSi2-x/n-Si contacts formed with a Ti cap
RECKINGER N., TANG X., BAYOT V., YAREKHA D.A., DUBOIS E., GODEY S., WALLART X., LARRIEU G., LASZCZ A., RATAJCZAK J., JACQUES P.J., RASKIN J.P.
J. Appl. Phys. 104, 10 (2008) 103523-1-9
doi: 10.1063/1.3010305 - Metamorphic high electron mobility Te-doped AlInSb/GaInSb heterostructures on InP (001)
DELHAYE G., DESPLANQUE L., WALLART X.
J. Appl. Phys. 104, 6 (2008) 066105-1-3
doi: 10.1063/1.2978365 - Silicon micromachined W-band hybrid coupler and power divider using DRIE technique
LI Y., KIRBY P.L., OFFRANC O., PAPAPOLYMEROU J.
IEEE Microw. Wirel. Compon. Lett. 18, 1 (2008) 22-24
doi: 10.1109/LMWC.2007.911978 - Spontaneous compliance of the InP/SrTiO3 heterointerface
SAINT-GIRONS G., PRIESTER C., REGRENY P., PATRIARCHE G., LARGEAU L., FAVRE-NICOLIN V., XU G., ROBACH Y., GENDRY M., HOLLINGER G.
Appl. Phys. Lett. 92, 24 (2008) 241907-1-3
doi: 10.1063/1.2944140 - The answer to the challenging question : is there any limit size of nanowires ?
HOURLIER D., PERROT P.
J. Nano Res. 4 (2008) 135-144
doi: 10.4028/www.scientific.net/JNanoR.4.135 - Growth of arrays of silicon nanowires with centrosymmetric distribution over silicon substrate
HOURLIER D., KLIMOVSKAYA A., EFREMOV A., GRIGOREV N., MOKLYAK Y., PROKOPENKO I.
European Materials Research Society Spring Meeting, Symposium K : Nanoscale Self-Assembly and Patterning, Strasbourg, France, may 28-june 1, 2007
Superlattices Microstruct. 44, 4-5 (2008) 362-373
doi: 10.1016/j.spmi.2008.01.008 - Multilevel modeling of the influence of surface transport peculiarities on growth, shaping, and doping of Si nanowires
EFREMOV A., KLIMOVSKAYA A., PROKOPENKO I., MOKLYAK Y., HOURLIER D.
European Materials Research Society Spring Meeting, Symposium M : Science and Technology of Nanotubes and Nanowires, Strasbourg, France, may 28-june 1, 2007
Physica E 40, 7 (2008) 2446-2453
doi: 10.1016/j.physe.2008.01.015 - TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography
LINDNER J.K.N., HOURLIER D., KRAUS D., WEINL M., MELIN T., STRITZKER B.
European Materials Research Society Spring Meeting, E-MRS Spring 2008, Symposium J : Beyond silicon technology : materials and devices for post-Si CMOS, Strasbourg, France, may 26-30, 2008
Mater. Sci. Semicond. Process. 11, 5-6 (2008) 169-174
doi: 10.1016/j.mssp.2008.09.016
Invited talks
- The growth of semiconductor nanowires for research or industrial purposes
HOURLIER D., PERROT P.
TMS 2008 Annual Meeting, Symposium : Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials VII, New Orleans, LA, USA, march 9-13, 2008
PhD thesis
- Réalisation et caractérisation de photodiodes à transport unipolaire pour la génération d’ondes terahertz
BECK A.
Thèse de doctorat en Microondes et Microtechnologies, Université de Lille 1, 3 décembre 2008
http://tel.archives-ouvertes.fr/tel-00366728/fr/
