{"id":77224,"date":"2026-02-24T12:14:19","date_gmt":"2026-02-24T10:14:19","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=77224"},"modified":"2026-02-26T10:15:07","modified_gmt":"2026-02-26T08:15:07","slug":"microcavites-pour-composant-rf-soi-cmos-ultra-rapides-pour-application-5g-et-au-dela","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/a-la-une\/microcavites-pour-composant-rf-soi-cmos-ultra-rapides-pour-application-5g-et-au-dela.html","title":{"rendered":"Daniel GHEYSENS 26\/02\/2026 &#8211; \u00ab\u00a0Microcavit\u00e9s pour composant RF- SOI-CMOS ultra-rapides pour application 5G et au-del\u00e0\u00a0\u00bb"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_ng5ygjp51kjt\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-77224'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-mih9a83v-897308c2f789e2c9bdea845bc9ac4340\">\n#top .av-special-heading.av-mih9a83v-897308c2f789e2c9bdea845bc9ac4340{\nmargin:0 0 10px 0;\npadding-bottom:4px;\ncolor:#e58302;\n}\nbody .av-special-heading.av-mih9a83v-897308c2f789e2c9bdea845bc9ac4340 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-mih9a83v-897308c2f789e2c9bdea845bc9ac4340 .special-heading-inner-border{\nborder-color:#e58302;\n}\n.av-special-heading.av-mih9a83v-897308c2f789e2c9bdea845bc9ac4340 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-mih9a83v-897308c2f789e2c9bdea845bc9ac4340 av-special-heading-h2 custom-color-heading  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first  av-linked-heading'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >Daniel GHEYSENS 26\/02\/2026 &#8211; \u00ab\u00a0Microcavit\u00e9s pour composant RF- SOI-CMOS ultra-rapides pour application 5G et au-del\u00e0\u00a0\u00bb <\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-fd5f2e9d63bf552d6910d12f255eb26e'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a\">\n.av_font_icon.av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a{\ncolor:#e58302;\nborder-color:#e58302;\n}\n.av_font_icon.av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<h4>Daniel GHEYSENS<\/h4>\n<p><strong>Le 26 F\u00e9vrier 2026 \u00e0 9h30<br \/>\n<\/strong>Amphith\u00e9\u00e2tre LCI<\/p>\n<p>La soutenance sera accessible \u00e0 distance via le lien de visioconf\u00e9rence suivant:<br \/>\n<a class=\"moz-txt-link-freetext\" href=\"https:\/\/teams.microsoft.com\/meet\/39628230188219?p=lbDRxycb8d7eqZIAGK\">https:\/\/teams.microsoft.com\/meet\/39628230188219?p=lbDRxycb8d7eqZIAGK<\/a><\/p>\n<\/div><\/section>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-jtefqx33-e91575393b713d2b7f933b9ae63e865f\">\n#top .av_textblock_section.av-jtefqx33-e91575393b713d2b7f933b9ae63e865f .avia_textblock{\nfont-size:13px;\n}\n<\/style>\n<section  class='av_textblock_section av-jtefqx33-e91575393b713d2b7f933b9ae63e865f'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<p><b>M. Fr\u00e9d\u00e9ric ANIEL<\/b>, Professeur des Universit\u00e9, Universit\u00e9 Paris-Saclay, C2N UMR 9001, <b>Rapporteur<\/b><br \/>\n<b>M. Pascal MASSON<\/b>, Professeur des Universit\u00e9, Universit\u00e9 de C\u00f4tes d\u2019Azur, Polytech\u2019Lab UPR 7498, <b>Rapporteur<\/b><br \/>\n<b>M. St\u00e9phane BILA<\/b>, Directeur de Recherche CNRS, XLIM UMR 7252, <b>Examinateur<\/b><br \/>\n<b>Mme Marina DENG<\/b>, Ma\u00eetresse de Conf\u00e9rences, Universit\u00e9 de Bordeaux, IMS UMR 5218, <b>Examinatrice<\/b><br \/>\n<b>M. Jean-Fran\u00e7ois ROBILLARD<\/b>, Enseignant\/Chercheur Junia, IEMN UMR 8520, <b>Examinateur<\/b><br \/>\n<b>M. Emmanuel DUBOIS<\/b>, Directeur de recherche CNRS, IEMN UMR 8520, <b>Directeur de th\u00e8se<\/b><br \/>\n<b>M. Alain FLEURY<\/b>, Senior Program Manager, STMicroelectronics Crolles, <b>Invit\u00e9<\/b><br \/>\n<b>M. St\u00e9phane MONFRAY<\/b>, Senior Member of Technical Staff, STMicroelectronics Crolles, <b>Invit\u00e9<\/b><\/p>\n<h5><span style=\"color: #800000;\">Summary:<img decoding=\"async\" id=\"&lt;part1.GaTwRkwE.KnOKVmgN@univ-lille.fr&gt;\" class=\"Apple-web-attachment Apple-edge-to-edge-visual-media Singleton\" style=\"caret-color: #000000; color: #000000; font-family: Helvetica; font-size: 13px; font-style: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: auto; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: auto; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration: none; opacity: 1;\" src=\"cid:part1.GaTwRkwE.KnOKVmgN@univ-lille.fr\" alt=\"\" \/><\/span><\/h5>\n<h5><strong>Microcavit\u00e9s pour composant RF-SOI_CMOS ultra-rapides pourapplication 5 G et au-del\u00e0<\/strong><\/h5>\n<p>Le d\u00e9veloppement de chaque nouveau standard de communication mobile s&rsquo;accompagne de sp\u00e9cifications de plus en plus strictes en ce qui concerne la bande passante, les pertes, la lin\u00e9arit\u00e9 et le bruit dans les commutateurs radiofr\u00e9quence (RF). Actuellement la technologie RF SOI-CMOS partiellement d\u00e9pl\u00e9t\u00e9e constitue la technologie de commutateurs la plus r\u00e9pandue pour le meilleur compromis atteint en termes de i) r\u00e9sistance \u00e0 l&rsquo;\u00e9tat passant Ron, ii) de capacit\u00e9 \u00e0 l&rsquo;\u00e9tat bloqu\u00e9 Coff, iii) de bande passante Ron.CoFf, iv) de tension de claquage BVos sous forte puissance RF et v) de rapport co\u00fbt\/performance. Apr\u00e8s avoir \u00e9puis\u00e9 les meilleures options d&rsquo;architecture de transistor et de conception de masques, toute am\u00e9lioration suppl\u00e9mentaire des performances requiert d\u00e9sormais des approches de rupture, d\u00e9passant le cadre des techniques conventionnelles. Dans ce contexte, cette th\u00e8se propose l&rsquo;introduction d&rsquo;une innovation technologique consistant \u00e0 r\u00e9duire le couplage capacitif parasite (CofF) par l&rsquo;introduction de microcavit\u00e9s d&rsquo;air dans le r\u00e9seau d&rsquo;interconnexion (back-end-of-the-line &#8211; BEOL), des technologies MOS.<br \/>\nEn premier lieu, une m\u00e9thodologie originale de mod\u00e9lisation a d&rsquo;abord \u00e9t\u00e9 d\u00e9velopp\u00e9e afin de quantifier l&rsquo;impact de ces microcavit\u00e9s sur la figure de m\u00e9rite Ron-Coff. Deux approches de simulation compl\u00e9mentaires ont \u00e9t\u00e9 mises en \u0153uvre : la premi\u00e8re traite le couplage \u00e9lectrostatique tridimensionnel au sein du BEOL, tandis que la seconde analyse le transport de charge et le couplage capacitif dans la structure intrins\u00e8que du transistor en 2 dimensions (front-end-of-the-line, FEOL). Les r\u00e9sultats obtenus d\u00e9montrent une r\u00e9duction de CofF d&rsquo;environ 30 % sans d\u00e9gradation de Ron, et ce pour deux g\u00e9n\u00e9rations de commutateurs diff\u00e9renci\u00e9es par leur dessin de masque (Tweeny et Nightingale). Sur le plan quantitatif, l&rsquo;introduction de microcavit\u00e9s permet d&rsquo;atteindre une valeur th\u00e9orique de RoN-Coff = 55 fs, surpassant nettement l&rsquo;\u00e9tat de l&rsquo;art des commutateurs RF actuels. Enfin, une \u00e9tude approfondie a montr\u00e9 pour la premi\u00e8re fois que l&rsquo;effet principal des microcavit\u00e9s d&rsquo;air sur la r\u00e9duction de Corf est obtenu lorsque leur p\u00e9n\u00e9tration s&rsquo;\u00e9tend jusqu&rsquo;au premier niveau d&rsquo;interconnexion m\u00e9tallique (M1).<br \/>\nEn second lieu, des proc\u00e9d\u00e9s de gravure n\u00e9cessaires \u00e0 la formation de microcavit\u00e9s dans les structures CMOS SOl ont \u00e9t\u00e9 d\u00e9velopp\u00e9s et optimis\u00e9s. Plusieurs approches ont \u00e9t\u00e9 \u00e9tudi\u00e9es, combinant la gravure \u00e0 faisceau d&rsquo;ions focalis\u00e9s (FIB), pr\u00e9cise mais g\u00e9n\u00e9rant une implantation de gallium limitant la gravure ult\u00e9rieure par d&rsquo;autres techniques telles que, la gravure RIE, contr\u00f4lable mais peu s\u00e9lective en l&rsquo;absence de masque et enfin la gravure \u00e0 base d&rsquo;acide fluorhydrique anhydre (HF) en phase vapeur, permettant une \u00e9vacuation profonde et s\u00e9lective de l&rsquo;oxyde. Cette derni\u00e8re a n\u00e9cessit\u00e9 l&rsquo;ajout d&rsquo;une couche protectrice d&rsquo;alumine d\u00e9pos\u00e9e par ALD (Atomic Layer Deposition), dont une \u00e9paisseur minimale de 40 m a \u00e9t\u00e9 identifi\u00e9e pour r\u00e9sister \u00e0 la gravure. Des solutions compl\u00e9mentaires, telles que l&rsquo;ajout d&rsquo;une couche d&rsquo;AIN au-dessus de la couche de mise en contrainte du canal (CESL), ont \u00e9t\u00e9 propos\u00e9es pour prot\u00e9ger le transistor intrins\u00e8que (FEOL) des effets parasites de gravure par HF vapeur. Bien que ces optimisations n\u00e9cessitent une adaptation du flot technologique industriel, elles valident la faisabilit\u00e9 exp\u00e9rimentale du concept de microcavit\u00e9s compl\u00e8tes au sein des dispositifs RF SOI.<br \/>\nEnfin, la caract\u00e9risation \u00e9lectrique et radiofr\u00e9quence des structures CMOS SOl int\u00e9grant des microcavit\u00e9s permet de conclure les travaux r\u00e9alis\u00e9s. Les mesures statiques ont d&rsquo;abord permis de v\u00e9rifier la fonctionnalit\u00e9 des dispositifs apr\u00e8s gravure, certaines d\u00e9gradations ayant pu \u00eatre corrig\u00e9es par un recuit thermique mod\u00e9r\u00e9 (300-400 \u00b0C) sous atmosph\u00e8re d&rsquo;azote hydrog\u00e9n\u00e9. Les mesures RF ont ensuite permis d&rsquo;extraire les param\u00e8tres S, puis les valeurs de Ron et CorF sur une large bande de fr\u00e9quences (150 MHz \u00e0 18 GHz). Les r\u00e9sultats montrent une r\u00e9duction moyenne de CoFf de 12 \u00e0 18% pour les structures grav\u00e9es, sans d\u00e9gradation du Ron, voire avec une am\u00e9lioration de 5 \u00e0 10 %. Les tests de tenue en puissance RF confirment \u00e9galement l&rsquo;absence d&rsquo;impact des cavit\u00e9s sur la fiabilit\u00e9 \u00e9lectrique des dispositifs. Enfin, la combinaison des mesures exp\u00e9rimentales positionne les structures Nightingale grav\u00e9es par FIB parmi les meilleures de leur cat\u00e9gorie, atteignant des produits RoN-CoFF inf\u00e9rieurs \u00e0 70 fs, proches des valeurs simul\u00e9es et se situant \u00e0 la pointe de l&rsquo;\u00e9tat de l&rsquo;art.<br \/>\nCes r\u00e9sultats valident exp\u00e9rimentalement l&rsquo;int\u00e9r\u00eat des microcavit\u00e9s pour l&rsquo;optimisation des commutateurs RF CMOS, confirmant les tendances pr\u00e9dites par la simulation. N\u00e9anmoins, la ma\u00eetrise compl\u00e8te du proc\u00e9d\u00e9, notamment la gravure s\u00e9lective et la passivation des cavit\u00e9s, demeure un enjeu majeur. Les perspectives de ce travail r\u00e9sident ainsi dans la transposition du proc\u00e9d\u00e9 vers une fili\u00e8re industrielle et l&rsquo;am\u00e9lioration de la reproductibilit\u00e9 afin d&rsquo;accro\u00eetre encore la tenue en puissance et de r\u00e9duire le produit Ron CoFF vers les valeurs th\u00e9oriques cibl\u00e9es.<\/p>\n<h5><strong>Microcavities engineering applied to ultra-fast SOI-RFCMOS devices for 5G and beyond<\/strong><\/h5>\n<p>The development of each new mobile communication standard is accompanied by increasingly strict specifications regarding bandwidth, losses, linearity and noise in radio frequency (RF) switches. Currently, partially depleted SOI-CMOS RF technology is the most widely used switch technology because it offers the best compromise in terms of i) on-state resistance (RON), ii) off-state capacitance (COFF), iii) RON.COFF bandwidth, iv) breakdown voltage (BVDS) under high RF power, and v) cost\/performance ratio. Having exhausted the best transistor architecture and mask design options, any further improvement in performance now requires disruptive approaches that go beyond conventional techniques. In this context, this thesis proposes the introduction of a technological innovation consisting of reducing parasitic capacitive coupling (COFF) by introducing air microcavities into the back-end-of-the-line (BEOL) interconnect network of MOS technologies.<br \/>\nFirst, an original modelling methodology was developed to quantify the impact of these microcavities on the RON\u2022COFF figure of merit. Two complementary simulation approaches were implemented: the first deals with three-dimensional electrostatic coupling within the BEOL, while the second analyses charge transport and | capacitive coupling in the intrinsic structure of the transistor in two dimensions (front-end-of-the-line, FEOL).<br \/>\nThe results obtained show a reduction in COFF of approximately 30% without degradation of RON for two generations of switches differentiated by their mask design (Tweeny and Nightingale). Quantitatively, the<br \/>\nintroduction of microcavities makes it possible to achieve a theoretical value of RON-COFF = 55 fs, significantly<br \/>\nsurpassing the state of the art of current RF switches. Finally, an in-depth study has shown for the first time that the main effect of air microcavities on COFF reduction is achieved when their penetration extends to the first level of metallic interconnection (M1).<br \/>\nSecondly, etching processes necessary for the formation of microcavities in CMOS SOl structures were developed and optimised. Several approaches were studied, combining focused ion beam (FIB) etching, which is precise but generates gallium implantation that limits subsequent etching by other techniques such as RIE etching, which is controllable but not very selective in the absence of a mask, and finally etching based on anhydrous hydrofluoric acid (HF) in the vapour phase, which allows deep and selective oxide removal. The latter required the addition of a protective layer of alumina deposited by ALD (Atomic Layer Deposition), with a minimum thickness of 40 nm identified as necessary to resist etching. Additional solutions, such as the addition of an AlN layer above the channel stress layer (CESL), were proposed to protect the intrinsic transistor (FEOL) from the parasitic effects of HF vapour etching. Although these optimisations require adaptation of the industrial technology flow, they validate the experimental feasibility of the concept of complete microcavities within RF SOl devices.<br \/>\nFinally, the electrical and radiofrequency characterisation of CMOS SOl structures incorporating microcavities allows us to conclude the work carried out. Static measurements were first used to verify the functionality of the devices after etching, with some damage being corrected by moderate thermal annealing (300-400 \u00b0C) in a hydrogenated nitrogen atmosphere. RF measurements were then used to extract the S parameters, followed by the RON and COFF values over a wide frequency band (150 MHz to 18 GHz). The results show an average reduction in COFF of 12 to 18% for the etched structures, with no degradation in RON and even an improvement of 5 to 10%. RF power handling tests also confirm that the cavities have no impact on the electrical reliability of the devices. Finally, the combination of experimental measurements places FIB-etched Nightingale structures among the best in their class, achieving RON-COFF products of less than 70 fs, close to simulated values and at the cutting edge of the state of the art. These results experimentally validate the value of microcavities for optimising CMOS RF switches, confirming the trends predicted by simulation. Nevertheless, complete mastery of the process, particularly selective etching and cavity passivation, remains a major challenge. The prospects for this work therefore lie in transferring the process to industrial production and improving reproducibility in order to further increase power handling and reduce the RON\u2022COFF product to the targeted theoretical values.<\/p>\n<p><img decoding=\"async\" id=\"&lt;part1.GaTwRkwE.KnOKVmgN@univ-lille.fr&gt;\" class=\"Apple-web-attachment Apple-edge-to-edge-visual-media Singleton\" style=\"caret-color: #000000; color: #000000; font-family: Helvetica; font-size: 13px; font-style: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: auto; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: auto; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration: none; opacity: 1;\" src=\"cid:part1.GaTwRkwE.KnOKVmgN@univ-lille.fr\" alt=\"\" \/><\/p>\n<\/div><\/section>\n<div  class='flex_column av-tio3nu-e0c56d167bb169129cf50bc504dc9cfe av_two_third  avia-builder-el-6  el_after_av_textblock  avia-builder-el-last  first flex_column_div  column-top-margin'     ><\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":71083,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[3,8,199],"tags":[],"class_list":["post-77224","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-a-la-une","category-actualites","category-these"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/77224","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=77224"}],"version-history":[{"count":7,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/77224\/revisions"}],"predecessor-version":[{"id":77243,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/77224\/revisions\/77243"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/71083"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=77224"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=77224"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=77224"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}