{"id":76682,"date":"2025-12-22T14:07:23","date_gmt":"2025-12-22T12:07:23","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=76682"},"modified":"2025-12-22T14:07:58","modified_gmt":"2025-12-22T12:07:58","slug":"yassine-fouzi-these","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/a-la-une\/yassine-fouzi-these.html","title":{"rendered":"YASSINE FOUZI  18\/12\/2025 &#8211; \u00ab\u00a0Caract\u00e9risation \u00e9lectrique &#038; mod\u00e9lisation non-lin\u00e9aire de HEMTs GaN en technologie compatible CMOS : \u00e9valuation des performances pour la conception de MMIC en bande Ka\u00a0\u00bb"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_10a7poxr5ifr4\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-76682'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-mih9a83v-028d3e175bb97ee538b227604d0f00ce\">\n#top .av-special-heading.av-mih9a83v-028d3e175bb97ee538b227604d0f00ce{\nmargin:0 0 10px 0;\npadding-bottom:4px;\ncolor:#e58302;\n}\nbody .av-special-heading.av-mih9a83v-028d3e175bb97ee538b227604d0f00ce .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-mih9a83v-028d3e175bb97ee538b227604d0f00ce .special-heading-inner-border{\nborder-color:#e58302;\n}\n.av-special-heading.av-mih9a83v-028d3e175bb97ee538b227604d0f00ce .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-mih9a83v-028d3e175bb97ee538b227604d0f00ce av-special-heading-h2 custom-color-heading  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first  av-linked-heading'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >YASSINE FOUZI 18\/12\/2025 &#8211; \u00ab\u00a0Caract\u00e9risation \u00e9lectrique <span class='special_amp'>&amp;<\/span> mod\u00e9lisation non-lin\u00e9aire de HEMTs GaN en technologie compatible CMOS : \u00e9valuation des performances pour la conception de MMIC en bande Ka\u00a0\u00bb<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-fd5f2e9d63bf552d6910d12f255eb26e'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a\">\n.av_font_icon.av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a{\ncolor:#e58302;\nborder-color:#e58302;\n}\n.av_font_icon.av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<h4>YASSINE FOUZI<\/h4>\n<p><strong>Le 18 d\u00e9cembre 2025 \u00e0 10h00<br \/>\n<\/strong>Amphith\u00e9\u00e2tre LCI<\/p>\n<\/div><\/section>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-jtefqx33-e91575393b713d2b7f933b9ae63e865f\">\n#top .av_textblock_section.av-jtefqx33-e91575393b713d2b7f933b9ae63e865f .avia_textblock{\nfont-size:13px;\n}\n<\/style>\n<section  class='av_textblock_section av-jtefqx33-e91575393b713d2b7f933b9ae63e865f'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<ul>\n<li style=\"font-family: Aptos, Aptos_EmbeddedFont, Aptos_MSFontService, Calibri, Helvetica, sans-serif; font-size: 12pt; color: #000000; line-height: 17.12px; margin: 0cm 0cm 0cm 36pt;\"><b>Mme. Nathalie MALBERT<\/b>, Professeure &#8211; Universit\u00e9 de Bordeaux: Rapporteure<br \/>\n<b>M. Jean Guy TARTARIN<\/b>, Professeur &#8211; Universit\u00e9 de Toulouse: Rapporteur<br \/>\n<b>M. Kamel HADDADI<\/b>, Professeur &#8211; Universit\u00e9 de Lille: Examinateur<br \/>\n<b>M. Philippe ALTUNTAS<\/b>, Docteur &#8211; MACOM: Examinateur<br \/>\n<b>Mme. Valeria DI GIACOMO BRUNEL<\/b>, Docteure &#8211; UMS: Examinatrice<br \/>\n<b>M. Sylvain BOLLAERT<\/b>, Professeur &#8211; Universit\u00e9 de Lille: Directeur de th\u00e8se<br \/>\n<b>M. Nicolas DEFRANCE<\/b>, Maitre de conf\u00e9rences &#8211; Universit\u00e9 de Lille: Encadrant de th\u00e8se<br \/>\n<b>M. Erwan MORVAN<\/b>, Docteur &#8211; CEA Leti: Invit\u00e9<\/li>\n<\/ul>\n<h5><span style=\"color: #800000;\">Summary:<\/span><\/h5>\n<div>Dans le contexte de l\u2019essor des t\u00e9l\u00e9communications et de l\u2019exploitation de bandes de fr\u00e9quences toujours plus \u00e9lev\u00e9es, notamment la bande Ka, essentielle pour les syst\u00e8mes satellitaires et les futurs r\u00e9seaux mobiles. Dans ce cadre, la technologie HEMT GaN sur silicium, d\u00e9velopp\u00e9e par le CEA-Leti et compatible CMOS, a \u00e9t\u00e9 \u00e9tudi\u00e9e comme une solution prometteuse alliant performances RF, int\u00e9gration et co\u00fbts ma\u00eetris\u00e9s.<br \/>\nLes contributions de ce travail se d\u00e9clinent en plusieurs volets. Une m\u00e9thodologie compl\u00e8te de caract\u00e9risation a tout d\u2019abord \u00e9t\u00e9 propos\u00e9e afin d\u2019identifier et de quantifier les effets limitatifs li\u00e9s aux ph\u00e9nom\u00e8nes thermiques et aux pi\u00e8ges, qui d\u00e9gradent les performances dynamiques des dispositifs. Ces travaux ont permis de comparer diff\u00e9rentes variantes technologiques (MISHEMT, Recess-Gate) et de mettre en \u00e9vidence leurs points forts respectifs. Par ailleurs, un mod\u00e8le \u00e9lectrique petit signal et grand signal a \u00e9t\u00e9 \u00e9labor\u00e9, int\u00e9grant les comportements non lin\u00e9aires et offrant un outil fiable pour la conception de circuits MMIC.<br \/>\nEnfin, la conception d\u2019un amplificateur de puissance \u00e0 deux \u00e9tages op\u00e9rants entre 26 et 30 GHz, bas\u00e9 sur les transistors \u00e9tudi\u00e9s, a d\u00e9montr\u00e9 la pertinence de cette technologie pour des applications concr\u00e8tes en bande Ka. Les performances obtenues pr\u00e9sentent une Pout de 33 dBm et une PAE sup\u00e9rieur \u00e0 30% et gain petit signal sup\u00e9rieur \u00e0 15 dB, confirment le potentiel industriel du GaN sur Si pour les futures g\u00e9n\u00e9rations de syst\u00e8mes de communication.<br \/>\nEn conclusion, cette recherche a contribu\u00e9 \u00e0 la fois \u00e0 une meilleure compr\u00e9hension des m\u00e9canismes physiques des transistors GaN sur Si et \u00e0 leur mise en oeuvre dans des circuits int\u00e9gr\u00e9s \u00e0 haute fr\u00e9quence. Si des d\u00e9fis persistent, notamment en mati\u00e8re de gestion thermique et de fiabilit\u00e9, les perspectives ouvertes concernent l\u2019optimisation des proc\u00e9d\u00e9s, l\u2019\u00e9largissement de la mod\u00e9lisation et l\u2019exploration de fr\u00e9quences encore plus \u00e9lev\u00e9es, en lien avec l\u2019\u00e9volution vers les r\u00e9seaux 6G et au-del\u00e0.<\/div>\n<div><\/div>\n<div class=\"elementToProof\">\n<p><span style=\"font-family: 'Trebuchet MS Bold', Verdana, Arial; font-size: 13.3333px; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: justify; text-indent: 0px; text-transform: none; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; white-space: normal; background-color: #ffffff; text-decoration-thickness: initial; text-decoration-style: initial; text-decoration-color: initial; float: none; display: inline !important;\">\u00a0<\/span><strong><span style=\"color: #800000;\">Abstract:<\/span><\/strong><\/p>\n<\/div>\n<div class=\"elementToProof\">\n<div>\n<p style=\"margin: 0px;\">In the context of the rapid expansion of telecommunications and the exploitation of increasingly high frequency bands, particularly the Ka-band, which is essential for satellite systems and future mobile networks. In this framework, the GaN-on-silicon HEMT technology developed by CEA-Leti, and CMOS compatible, was investigated as a promising solution that combines RF performance, integration capability, and cost efficiency.<br \/>\nThe contributions of this thesis can be summarized in several key points. First, a comprehensive characterization methodology was proposed to identify and quantify the limiting effects of thermal phenomena and trapping mechanisms, which degrade the dynamic behavior of the devices. This study enabled the comparison of different technological variants (MISHEMT, Recess-Gate) and highlighted their respective advantages. In addition, a small-signal and large-signal electrical model was developed, incorporating nonlinear effects and providing a reliable tool for MMIC design.<br \/>\nFinally, the design of a two stage power amplifier operating between 26 and 30 GHz, based on the transistors studied, demonstrated the relevance of this technology for concrete Ka-band applications. The performance shows an output power of 33 dBm, a PAE greater than 30%, and a small signal gain above 15 dB confirms the industrial potential of GaN on Si for next-generations communication systems.<br \/>\nIn conclusion, this research has contributed both to a deeper understanding of the physical mechanisms in GaN on Si transistors and to their practical implementation in high-frequency integrated circuits. While challenges remain, particularly regarding thermal management and device reliability, the perspectives opened by this work include process optimization, advanced modeling approaches, and the exploration of even higher frequency bands in view of 6G networks and beyond.<\/p>\n<\/div>\n<\/div>\n<\/div><\/section>\n<div  class='flex_column av-av_two_third-ffd32c5c0f45105b246d723872274e0c av_two_third  avia-builder-el-7  el_after_av_textblock  avia-builder-el-last  first flex_column_div  column-top-margin'     ><\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":71083,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[3,8,199],"tags":[],"class_list":["post-76682","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-a-la-une","category-actualites","category-these"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/76682","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=76682"}],"version-history":[{"count":2,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/76682\/revisions"}],"predecessor-version":[{"id":76684,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/76682\/revisions\/76684"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/71083"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=76682"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=76682"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=76682"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}