{"id":76677,"date":"2025-12-22T08:25:13","date_gmt":"2025-12-22T06:25:13","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=76677"},"modified":"2025-12-22T12:25:30","modified_gmt":"2025-12-22T10:25:30","slug":"adrien-bidaud-gan","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/a-la-une\/adrien-bidaud-gan.html","title":{"rendered":"Adrien Bidaud 8\/12\/2025 &#8211; \u00ab\u00a0Optimisation des proc\u00e9d\u00e9s de fabrication pour le d\u00e9veloppement de transistors de puissance en GaN\u00a0\u00bb"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_cg8o3vdj6ppw\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-76677'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-mih9a83v-c4418dbb92049d858cdd7b8464952e5a\">\n#top .av-special-heading.av-mih9a83v-c4418dbb92049d858cdd7b8464952e5a{\nmargin:0 0 10px 0;\npadding-bottom:4px;\ncolor:#e58302;\n}\nbody .av-special-heading.av-mih9a83v-c4418dbb92049d858cdd7b8464952e5a .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-mih9a83v-c4418dbb92049d858cdd7b8464952e5a .special-heading-inner-border{\nborder-color:#e58302;\n}\n.av-special-heading.av-mih9a83v-c4418dbb92049d858cdd7b8464952e5a .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-mih9a83v-c4418dbb92049d858cdd7b8464952e5a av-special-heading-h2 custom-color-heading  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first  av-linked-heading'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >Adrien Bidaud 8\/12\/2025 &#8211; \u00ab\u00a0Optimisation des proc\u00e9d\u00e9s de fabrication pour le d\u00e9veloppement de transistors de puissance en GaN\u00a0\u00bb <\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-fd5f2e9d63bf552d6910d12f255eb26e'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a\">\n.av_font_icon.av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a{\ncolor:#e58302;\nborder-color:#e58302;\n}\n.av_font_icon.av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<h4>Adrien BIDAUD<\/h4>\n<p><strong>Le 8 d\u00e9cembre 2025 \u00e0 14h00<br \/>\n<\/strong>Amphith\u00e9\u00e2tre LCI<\/p>\n<\/div><\/section>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-jtefqx33-e91575393b713d2b7f933b9ae63e865f\">\n#top .av_textblock_section.av-jtefqx33-e91575393b713d2b7f933b9ae63e865f .avia_textblock{\nfont-size:13px;\n}\n<\/style>\n<section  class='av_textblock_section av-jtefqx33-e91575393b713d2b7f933b9ae63e865f'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<ul>\n<li>\n<p role=\"presentation\">Rapporteur : J\u00e9r\u00f4me Billoue, Professeur des universit\u00e9s, Universit\u00e9 de Tours<\/p>\n<\/li>\n<li>\n<p role=\"presentation\">Rapporteur : Fr\u00e9d\u00e9ric Morancho, Professeur des universit\u00e9s, Universit\u00e9 Paul Sabatier Toulouse<\/p>\n<\/li>\n<li>\n<p role=\"presentation\">Examinatrice:\u00a0 Isabelle Sagnes, Directrice de la recherche CNRS, C2N<\/p>\n<\/li>\n<li>\n<p role=\"presentation\">Examinateur:\u00a0 Thierry Boudet, Expert technologies semiconducteurs WBG, Soitec<\/p>\n<\/li>\n<li>\n<p role=\"presentation\">Directeur de th\u00e8se : Farid Medjdoub, Charg\u00e9 de recherche CNRS, IEMN<\/p>\n<\/li>\n<li>\n<p role=\"presentation\">Co-directeur de th\u00e8se : Katir Ziouche, Professeur des universit\u00e9s, Universit\u00e9 de Lille<\/p>\n<\/li>\n<\/ul>\n<h5><span style=\"color: #800000;\">Summary:<\/span><\/h5>\n<div class=\"elementToProof\">\n<div class=\"elementToProof\">La demande en \u00e9nergie \u00e9lectrique et en densit\u00e9 de conversion de puissance ne cesse de cro\u00eetre, les dispositifs en silicium conventionnels atteignent leurs limites physiques et de performance. Les semiconducteurs \u00e0 large bande interdite offrent une voie d\u2019\u00e9volution. Parmi eux, le GaN combine un champ \u00e9lectrique critique \u00e9lev\u00e9 et une grande mobilit\u00e9 \u00e9lectronique avec des architectures de dispositifs permettant des convertisseurs compacts, haute fr\u00e9quence et \u00e9conomes en \u00e9nergie. Ma th\u00e8se \u00e9tudie la conception et l\u2019optimisation des transistors de puissance au nitrure de gallium (GaN), en se concentrant sur les transistors lat\u00e9raux \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMTs) et les MOSFETs verticaux \u00e0 tranch\u00e9e (V-T-MOSFETs). L\u2019objectif est d\u2019obtenir un fonctionnement robuste et fiable dans la gamme 600\u20131200 V tout en maintenant une haute efficacit\u00e9 et une commutation rapide.<\/div>\n<div class=\"elementToProof\">Le chapitre 1 pr\u00e9sentera les technologies de la conversion de puissance actuelles, bas\u00e9 sur le silicium, et expliquera en quoi de nouveaux mat\u00e9riaux, en particulier le GaN, permettrait d&rsquo;am\u00e9liorer les perfomances de ces composants gr\u00e2ce \u00e0 ses propri\u00e9t\u00e9s exceptionnelles en termes de champ de claquage, de mobilit\u00e9 des porteurs et de capacit\u00e9 en fr\u00e9quence. Je pr\u00e9senterai \u00e9galement l&rsquo;\u00e9tat actuel du march\u00e9 et de la recherche sur les composants GaN pour la conversion, en passant en revue l\u2019\u00e9tat de l\u2019art des familles de dispositifs lat\u00e9raux et verticaux.<\/div>\n<div class=\"elementToProof\">Le chapitre 2 se concentrera sur l\u2019optimisation des HEMTs GaN lat\u00e9raux. En combinant des simulations TCAD et la fabrication de prototypes, l\u2019influence de param\u00e8tres cl\u00e9s de conception \u2014 tels que la concentration en carbone dans le buffer et la composition de la back barri\u00e8re \u2014 est \u00e9tudi\u00e9e. Une attention particuli\u00e8re est port\u00e9e aux HEMTs GaN sur substrats saphir, optimis\u00e9s en vue d\u2019une voie d\u2019int\u00e9gration verticale innovante bas\u00e9e sur la technique d\u2019exfoliation \u00e9tudi\u00e9e par simulation. La caract\u00e9risation exp\u00e9rimentale valide les tendances simul\u00e9es et propose des lignes directrices de conception pour att\u00e9nuer le pi\u00e9geage et am\u00e9liorer les performances dynamiques.<\/div>\n<div class=\"elementToProof\">Le chapitre 3 traite du d\u00e9veloppement des architectures GaN verticales, en pr\u00e9sentant la conception, la fabrication et la caract\u00e9risation de V-T-MOSFETs GaN sur silicium. Des techniques de terminaison de bord, incluant l\u2019implantation de fluor et la recroissance de p-GaN, sont \u00e9valu\u00e9es par simulation. Un proc\u00e9d\u00e9 complet de fabrication d\u2019un transistor vertical GaN-on-Si est d\u00e9velopp\u00e9, et les dispositifs obtenus sont \u00e9valu\u00e9s \u00e9lectriquement afin de mettre en \u00e9vidence \u00e0 la fois leur potentiel et leurs limitations actuelles.<\/div>\n<div class=\"elementToProof\">Le chapitre 4 explore des strat\u00e9gies d\u2019optimisation futures pour les dispositifs GaN verticaux, incluant la gravure \u00e0 faible endommagement, l\u2019arrondissement des angles et l\u2019ing\u00e9nierie du di\u00e9lectrique de grille pour supprimer la concentration du champ \u00e9lectrique et le pi\u00e9geage d\u2019interface. Des m\u00e9thodes visant \u00e0 am\u00e9liorer la robustesse, telles que les grilles prot\u00e9g\u00e9es par une r\u00e9gion p (p-shielded gates) et les anneaux de garde (guard rings), sont \u00e9galement discut\u00e9es. Ces approches d\u00e9crivent les exigences n\u00e9cessaires pour des transistors GaN fiables et haute tension destin\u00e9s aux applications automobiles, aux \u00e9nergies renouvelables et aux r\u00e9seaux \u00e9lectriques.\u00a0\u00bb<\/div>\n<p><span style=\"font-family: 'Trebuchet MS Bold', Verdana, Arial; font-size: 13.3333px; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: justify; text-indent: 0px; text-transform: none; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; white-space: normal; background-color: #ffffff; text-decoration-thickness: initial; text-decoration-style: initial; text-decoration-color: initial; float: none; display: inline !important;\">\u00a0\u00a0<\/span><\/p>\n<\/div>\n<h5><strong><span style=\"color: #800000;\">Abstract:<\/span><\/strong><\/h5>\n<div class=\"elementToProof\">\n<div>\n<div class=\"elementToProof\">\u00ab\u00a0As the demand for electrical energy and power-conversion density continues to increase, conventional silicon devices are reaching their physical and performance limits. Wide bandgap semiconductors offer a path forward. Among them, GaN combines a high critical electric field and high electron mobility with device architectures that enable compact, high-frequency, and energy-efficient converters. My thesis investigates the design and optimization of gallium nitride (GaN) power transistors, focusing on lateral high-electron-mobility transistors (HEMTs) and vertical trench MOSFETs (V-T-MOSFETs). The objective is to achieve robust and reliable operation in the 600\u20131200 V range while maintaining high efficiency and fast switching.<\/div>\n<div class=\"elementToProof\">Chapter 1 will present current power-conversion technologies based on silicon and explain how new materials\u2014particularly GaN\u2014can improve device performance thanks to their exceptional properties in terms of breakdown field, carrier mobility, and frequency capability. I will also present the current state of the market and research on GaN power devices for conversion, reviewing the state of the art for both lateral and vertical device families.<\/div>\n<div class=\"elementToProof\">Chapter 2 will focus on the optimization of lateral GaN HEMTs. Combining TCAD simulations with prototype fabrication, the influence of key design parameters\u2014such as buffer carbon concentration and back-barrier composition\u2014is investigated. Particular attention is given to GaN HEMTs on sapphire substrates, optimized with a view to an innovative vertical-integration pathway based on an exfoliation technique studied through simulation. Experimental characterization validates the simulated trends and provides design guidelines to mitigate trapping and improve dynamic performance.<\/div>\n<div class=\"elementToProof\">Chapter 3 addresses the development of vertical GaN architectures, presenting the design, fabrication, and characterization of GaN V-T-MOSFETs on silicon. Edge-termination techniques, including fluorine implantation and p-GaN regrowth, are evaluated through simulation. A complete fabrication process for a vertical GaN-on-Si transistor is developed, and the resulting devices are electrically benchmarked to highlight both their potential and their current limitations.<\/div>\n<div class=\"elementToProof\">Chapter 4 explores future optimization strategies for vertical GaN devices, including low-damage etching, corner rounding, and gate-dielectric engineering to suppress electric-field crowding and interface trapping. Methods aiming to improve device ruggedness, such as p-shielded gates and guard rings, are also discussed. These approaches outline the requirements for reliable, high-voltage GaN transistors intended for automotive, renewable-energy, and grid applications.\u00a0\u00bb<\/div>\n<\/div>\n<\/div>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":71083,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[3,8,199],"tags":[],"class_list":["post-76677","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-a-la-une","category-actualites","category-these"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/76677","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=76677"}],"version-history":[{"count":3,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/76677\/revisions"}],"predecessor-version":[{"id":76680,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/76677\/revisions\/76680"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/71083"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=76677"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=76677"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=76677"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}