{"id":76659,"date":"2025-12-22T11:45:41","date_gmt":"2025-12-22T09:45:41","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=76659"},"modified":"2025-12-22T11:51:18","modified_gmt":"2025-12-22T09:51:18","slug":"lyes-ben-hammou-etude-de-la-linearite-et-de-la-fiabilite-de-composants-hemt-gan","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/a-la-une\/lyes-ben-hammou-etude-de-la-linearite-et-de-la-fiabilite-de-composants-hemt-gan.html","title":{"rendered":"Lyes Ben Hammou  11\/12\/2025 &#8211; \u00ab\u00c9tude de la lin\u00e9arit\u00e9 et de la fiabilit\u00e9 de composants HEMT GaN pour des applications en gamme d\u2019ondes millim\u00e9triques\u00bb"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_1duliop7n6eie\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-76659'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-mih9a83v-bc64ad99d1a58397b253399abb53700a\">\n#top .av-special-heading.av-mih9a83v-bc64ad99d1a58397b253399abb53700a{\nmargin:0 0 10px 0;\npadding-bottom:4px;\ncolor:#e58302;\n}\nbody .av-special-heading.av-mih9a83v-bc64ad99d1a58397b253399abb53700a .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-mih9a83v-bc64ad99d1a58397b253399abb53700a .special-heading-inner-border{\nborder-color:#e58302;\n}\n.av-special-heading.av-mih9a83v-bc64ad99d1a58397b253399abb53700a .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-mih9a83v-bc64ad99d1a58397b253399abb53700a av-special-heading-h2 custom-color-heading  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first  av-linked-heading'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >Lyes Ben Hammou &#8211; 11\/12\/2025 &#8211; \u00ab\u00c9tude de la lin\u00e9arit\u00e9 et de la fiabilit\u00e9 de composants HEMT GaN pour des applications en gamme d\u2019ondes millim\u00e9triques\u00bb<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-fd5f2e9d63bf552d6910d12f255eb26e'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a\">\n.av_font_icon.av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a{\ncolor:#e58302;\nborder-color:#e58302;\n}\n.av_font_icon.av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-649e41ac67c26b53aa0b3d91d18e5f5a avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<h4>Lyes Ben Hammou<\/h4>\n<p><strong>Le 11 d\u00e9cembre 2025 \u00e0 14h00<br \/>\n<\/strong>Amphith\u00e9\u00e2tre LCI<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-26fa44c544b10063385818eda37e027b'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<p>M. Jean-Pierre Raskin, Professeur (Universit\u00e9 catholique de Louvain)<br \/>\nM. Raphael Sommet, Charg\u00e9 de recherche CNRS (XLIM)<\/p>\n<p>Examiners :<br \/>\nMme. Kathia Harrouche , Ing\u00e9nieur (SOITEC)<br \/>\nM. Didier THERON, Directeur de recherche CNRS (IEMN)<\/p>\n<p>Directeurs de th\u00e8se :<br \/>\nM. Farid MEDJDOUB, Charg\u00e9 de recherche CNRS (IEMN)<br \/>\nM. Katir ZIOUCHE, Professeur (Universit\u00e9 de Lille)<\/p>\n<p>Invit\u00e9s :<br \/>\nM. Didier Floriot, Directeur technique (UMS)<br \/>\nM. Guillaume MOUGINOT, Ing\u00e9nieur (DGA)<\/p>\n<h5><span style=\"color: #800000;\">Summary:<\/span><\/h5>\n<div class=\"elementToProof\">\u00ab\u00a0Les transistors HEMT \u00e0 base de nitrure de gallium (GaN) ont d\u00e9montr\u00e9 d\u2019excellentes performances RF en game d&rsquo;ondes millim\u00e9triques, s\u2019imposant comme une technologie de r\u00e9f\u00e9rence pour les applications \u00e0 forte puissance et haut rendement telles que le radar, les syst\u00e8mes spatiaux et les communications 5G\/6G. Ces performances \u00e9tant d\u00e9sormais \u00e9tablies, la recherche se concentre sur deux verrous majeurs au niveau du composant : la fiabilit\u00e9 et la lin\u00e9arit\u00e9. La fiabilit\u00e9 reste critique pour les dispositifs \u00e0 courte grille (~100 nm), dont les m\u00e9canismes de d\u00e9gradation sont encore mal caract\u00e9ris\u00e9s. En parall\u00e8le, la lin\u00e9arit\u00e9 est devenue un param\u00e8tre d\u00e9terminant pour les modulations complexes modernes, au m\u00eame titre que le rendement. Les effets de pi\u00e9geage jouent un r\u00f4le central dans ces ph\u00e9nom\u00e8nes, car ils impactent la puissance, le rendement, la fiabilit\u00e9 et potentiellement la lin\u00e9arit\u00e9.<br \/>\nDans ce travail, des tests HTOL sous pointes et sous charge active ont \u00e9t\u00e9 r\u00e9alis\u00e9s pour \u00e9valuer la fiabilit\u00e9 \u00e0 court terme de diff\u00e9rentes technologies GaN HEMT millim\u00e9triques. Un banc load-pull actif deux-tons \u00e0 40 GHz a \u00e9t\u00e9 con\u00e7u et d\u00e9velopp\u00e9, un dispositif exp\u00e9rimental tr\u00e8s rare \u00e0 ces fr\u00e9quences, permettant la premi\u00e8re caract\u00e9risation intrins\u00e8que de la lin\u00e9arit\u00e9 de HEMT GaN \u00e0 courte grille en bande Ka. En parall\u00e8le, un syst\u00e8me de spectroscopie du courant de drain transitoire (DCT) a \u00e9t\u00e9 mis au point pour \u00e9tudier la dynamique des pi\u00e8ges, et des simulations TCAD calibr\u00e9es ont \u00e9t\u00e9 employ\u00e9es pour appuyer l\u2019analyse physique.<br \/>\nLes travaux ont port\u00e9 sur des dispositifs GaN HEMT \u00e0 l\u2019\u00e9tat de l\u2019art : structures AlN\/GaN dop\u00e9es carbone avec back-barri\u00e8re AlGaN et technologie QuanFINE sans couche tampon. Des niveaux profonds li\u00e9s au carbone ont \u00e9t\u00e9 identifi\u00e9s dans le GaN et l\u2019AlGaN, pr\u00e9sentant un comportement non-Arrhenius. Dans les dispositifs \u00e0 back-barri\u00e8re AlGaN, un canal parasite a \u00e9t\u00e9 mis en \u00e9vidence et son origine physique expliqu\u00e9e, tandis que le m\u00e9canisme de l\u2019effet \u00ab kink \u00bb a \u00e9t\u00e9 clarifi\u00e9. Dans les structures QuanFINE, des pi\u00e8ges \u00e0 l\u2019interface GaN\/AlN ont \u00e9t\u00e9 observ\u00e9s et supprim\u00e9s par ing\u00e9nierie de l\u2019\u00e9pitaxie.<br \/>\nLes \u00e9tudes de fiabilit\u00e9 ont montr\u00e9 une corr\u00e9lation directe entre les charges pi\u00e9g\u00e9es et la d\u00e9gradation du dispositif, ainsi qu\u2019une d\u00e9pendance nette \u00e0 la temp\u00e9rature. Dans les transistors QuanFINE, des m\u00e9canismes de d\u00e9gradation sp\u00e9cifiques ont \u00e9t\u00e9 identifi\u00e9s et des strat\u00e9gies de mitigation propos\u00e9es. Enfin, les mesures de lin\u00e9arit\u00e9 obtenues \u00e0 40 GHz placent les dispositifs \u00e9tudi\u00e9s au niveau de l\u2019\u00e9tat de l\u2019art international en termes de comportement IM3 et OIP3, confirmant leur fort potentiel pour les futures applications millim\u00e9triques.\u00a0\u00bb<\/div>\n<h5><span style=\"color: #800000;\">Abstract:<\/span><\/h5>\n<div class=\"elementToProof\">\u00ab\u00a0Gallium Nitride (GaN) HEMTs have demonstrated outstanding RF performance at millimeter-wave frequencies, positioning them as the leading technology for high-power and high-efficiency applications such as radar, space systems, and 5G\/6G communications. With these capabilities now well established, research is increasingly focused on two remaining challenges: reliability and linearity at the device level. Reliability is a major concern for short gate-length devices (\u2248100 nm), where degradation mechanisms and qualification protocols remain insufficiently understood. In parallel, linearity has become essential for modern modulation schemes, which demand high linearity alongside efficiency. Trapping effects lie at the center of both issues, influencing key figures of merit such as output power, efficiency, reliability, and potentially linearity.<br \/>\nIn this work, on-wafer short-term HTOL tests using active load-pull were performed to assess the early reliability of various mmWave GaN HEMT technologies. To investigate linearity, a custom two-tone active load-pull bench at 40 GHz was designed and implemented, a rare experimental platform at these frequencies. For trapping studies, a dedicated drain current transient (DCT) spectroscopy system was also developed, enabling precise characterization of trap dynamics. These measurements were complemented by TCAD-calibrated simulations for deeper physical insight.<br \/>\nThe experimental study focused on state-of-the-art carbon-doped AlN\/GaN devices with AlGaN back-barriers and buffer-free QuanFINE structures. Broader device sets were analyzed for trapping effects, revealing carbon-related deep levels in both GaN and AlGaN with similar characteristics. The non-Arrhenius behavior of carbon-related traps was elucidated, and in AlGaN back-barrier devices, a parasitic channel was identified and its physical origin determined. The mechanism responsible for the kink effect in carbon-doped devices was clarified, while in QuanFINE devices, traps at the GaN\/AlN interface were revealed and successfully mitigated through stack engineering.<br \/>\nReliability studies revealed degradation correlated with trapped charge accumulation and a clear temperature dependence. In QuanFINE devices, distinct degradation mechanisms were identified and mitigation strategies proposed. Finally, the developed 40 GHz two-tone bench enabled benchmark linearity measurements, showing comparable or superior IM3 and OIP3 performance to current mmWave GaN state-of-the-art, thus confirming the technological maturity of the evaluated devices.<\/div>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":71083,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[3,8,199],"tags":[],"class_list":["post-76659","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-a-la-une","category-actualites","category-these"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/76659","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=76659"}],"version-history":[{"count":4,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/76659\/revisions"}],"predecessor-version":[{"id":76663,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/76659\/revisions\/76663"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/71083"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=76659"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=76659"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=76659"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}