{"id":71464,"date":"2024-11-15T10:31:29","date_gmt":"2024-11-15T08:31:29","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=71464"},"modified":"2024-11-15T10:31:29","modified_gmt":"2024-11-15T08:31:29","slug":"these-youssef-hamdaoui","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/a-la-une\/these-youssef-hamdaoui.html","title":{"rendered":"Thesis by Youssef HAMDAOUI: \"Development of Novel GaN-on-Silicon Vertical Power Devices,\" 20\/11 at 10 a.m."},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_6joet044cvcg\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-71464'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-k5dohoxw-9c58789e4f17ff33d56bb1f6c5a1edfb\">\n#top .av-special-heading.av-k5dohoxw-9c58789e4f17ff33d56bb1f6c5a1edfb{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-k5dohoxw-9c58789e4f17ff33d56bb1f6c5a1edfb .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-k5dohoxw-9c58789e4f17ff33d56bb1f6c5a1edfb .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-k5dohoxw-9c58789e4f17ff33d56bb1f6c5a1edfb av-special-heading-h4  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first  av-linked-heading'><h4 class='av-special-heading-tag'  itemprop=\"headline\"  >Thesis by Youssef HAMDAOUI: \"Development of Novel GaN-on-Silicon Vertical Power Devices,\" 20\/11 at 10 a.m. <\/h4><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-fd5f2e9d63bf552d6910d12f255eb26e'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>Thesis Youssef HAMDAOUI<br \/>\n<\/strong><\/p>\n<p>Defence: 20 November 10H00<strong><br \/>\n<\/strong>IEMN Amphitheatre<\/p>\n<\/div><\/section>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-jtefqx33-6db969b2e204313ebd62331ed4fc69ec\">\n#top .av_textblock_section.av-jtefqx33-6db969b2e204313ebd62331ed4fc69ec .avia_textblock{\nfont-size:15px;\n}\n<\/style>\n<section  class='av_textblock_section av-jtefqx33-6db969b2e204313ebd62331ed4fc69ec'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury<\/span><\/strong><i><\/i><\/h5>\n<p>Thesis Director<br \/>\nMr. Farid MEDJDOUB CNRS scientist(IEMN, France)<br \/>\nMr. Christophe Detavernier Professor (University of Ghent, Belgium)<\/p>\n<p>Reviewers<br \/>\nMr Rachid Driad Senior scientist (IAF, Germany)<br \/>\nMr Jerome Billoue Professor (University of Tours, France)<\/p>\n<p>Examiners<br \/>\nMrs. Nathalie Malbert Professor (IMS, France)<br \/>\nMr. Benoit Bakeroot Professor (University of Ghent, Belgium)<\/p>\n<p>Invited<br \/>\nJean-Francois Rolinat Program manager (STMicroelectronics, France)<br \/>\nThierry Boudet Program manager (Soitec, France)<\/p>\n<h5><strong><span style=\"color: #800000;\">\u00a0<\/span><\/strong><\/h5>\n<h5>Summary:<\/h5>\n<p align=\"justify\"><span style=\"font-size: small;\">This thesis explores the development of new GaN-on-silicon vertical power devices, aiming to achieve high performance in the 600 to 1200 V range with operational reliability, including avalanche breakdown capability. With the increasing energy demands of modern society, it is becoming imperative to develop more efficient power electronics. Traditional silicon-based devices have reached their physical limits, prompting the search for alternative materials. Gallium nitride (GaN) is proving to be a promising solution due to its superior physical properties and reduced manufacturing cost when grown on a silicon substrate. The research begins with a comprehensive review of the current state of the art of GaN devices on silicon, highlighting the need for vertical architectures over traditional lateral designs. The use of vertical devices is motivated by their ability to improve reliability, particularly with respect to high-voltage breakdown behaviour.<br \/>\nSimulation studies using Silvaco software were carried out to optimise the design of GaN P-I-N diodes on silicon, in order to improve on- and off-state performance. The thesis also addresses the fabrication processes, discussing the optimisation of ohmic contacts, mesa formation, edge termination and buffer layer etching. Techniques such as polyimide passivation and thick copper heat sinks were employed to improve thermal management and mechanical stability.<br \/>\nKey results include a significant reduction in leakage current and improved diode off-state performance thanks to advanced epitaxial growth techniques and innovative buffer layer designs. The first demonstration of avalanche breakdown in vertical GaN devices on silicon substrate is presented, achieving a high voltage withstand of up to 1200 V. In addition, a TMOSFET pseudo-vertical transistor in GaN on silicon has been developed, demonstrating promising preliminary performance.<br \/>\nThis work lays the foundations for future progress in GaN technology on vertical silicon, highlighting its potential in terms of the performance\/cost ratio for future applications in power electronics.<\/span><\/p>\n<p align=\"justify\"><strong>Abstract:<\/strong><\/p>\n<p>This thesis explores the development of novel vertical GaN-on-Silicon power devices, aiming to achieve high performance in the 600-1200 V range with reliable operation, including avalanche capability. As modern society's demand for energy grows, there is an urgent need for more efficient power electronics. Traditional silicon-based devices have reached their physical limits, driving the search for alternative materials. Gallium Nitride (GaN) presents a promising solution due to its superior physical properties and cost-effectiveness when grown on silicon substrates.<br \/>\nThe research begins with a comprehensive review of the current state of GaN-on-Silicon devices, highlighting the need for vertical configurations over traditional lateral designs. The use of vertical designs is motivated by their ability to enhance reliability, particularly in terms of breakdown behavior at high voltages.<br \/>\nSimulation studies using Silvaco software were conducted to optimize the design of GaN-on-Silicon P-I-N diodes, targeting improved performance in both on-state and off-state conditions. The thesis also delves into the fabrication processes, discussing the optimization of ohmic contacts, mesa formation, edge termination, and buffer layer etching. Techniques such as polyimide passivation and thick copper heatsinks were employed to enhance thermal management and mechanical stability.<br \/>\nKey findings include a significant reduction in leakage current and improved off-state performance through advanced epitaxial growth techniques and innovative buffer designs. The first demonstration of avalanche capability in vertical GaN devices on silicon substrates, achieving high breakdown voltages up to 1200 V, is presented. Additionally, a pseudo-vertical GaN-on-Silicon trench MOSFET was developed, demonstrating promising initial performance metrics.<br \/>\nThis work lays the groundwork for further advancements in GaN-on-Silicon technology, highlighting its potential as a cost-effective, high-performance solution for future power electronic applications.<br \/>\n&#8212;&#8212;&#8212;&#8212;&#8212;&#8212;&#8212;&#8212;&#8212;&#8212;&#8212;&#8212;&#8212;&#8212;-<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":71447,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[3,8,319,65,87,84],"tags":[],"class_list":["post-71464","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-a-la-une","category-actualites","category-actualites2022","category-agenda","category-agenda-en","category-agenda-en-en"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/71464","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=71464"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/71464\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/71447"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=71464"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=71464"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=71464"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}