{"id":65982,"date":"2024-06-21T16:35:45","date_gmt":"2024-06-21T14:35:45","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=65982"},"modified":"2024-07-23T16:05:47","modified_gmt":"2024-07-23T14:05:47","slug":"these-jash-mehta-developpement-de-fet-bases-sur-des-materiaux-a-bande-interdite-ultra-large-pour-lelectronique-de-puissance-haute-tension","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/actualites\/these-jash-mehta-developpement-de-fet-bases-sur-des-materiaux-a-bande-interdite-ultra-large-pour-lelectronique-de-puissance-haute-tension.html","title":{"rendered":"THESIS: Jash MEHTA- \"Development of FETs based on ultra-wide bandgap materials for high-voltage power electronics\"."},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_1lbyf2xfmdq6c\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-65982'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-k5dohoxw-6151d5122c14e59f9e71a805bb8849c5\">\n#top .av-special-heading.av-k5dohoxw-6151d5122c14e59f9e71a805bb8849c5{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-k5dohoxw-6151d5122c14e59f9e71a805bb8849c5 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-k5dohoxw-6151d5122c14e59f9e71a805bb8849c5 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-k5dohoxw-6151d5122c14e59f9e71a805bb8849c5 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first  av-linked-heading'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESIS: Jash MEHTA- \"Development of FETs based on ultra-wide bandgap materials for high-voltage power electronics\".<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2271122c13c04ea783daa51e49a51efc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>Jash MEHTA<\/strong><\/p>\n<p>Soutenance : 25 Juin \u00e0 10H<strong><br \/>\n<\/strong>IEMN Amphitheatre - Central Laboratory - Villeneuve d'Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-9fec7348e3988ab1a6ae2de54500dd60'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<ul>\n<li>Reviewer:<br \/>\nM. Fr\u00e9deric MORANCHO \u2013 Professor of universities (Universit\u00e9 de Toulouse)<br \/>\nM. Jer\u00f4me BILLOUE \u2013 Professor (Universit\u00e9 de Tours)Examiners:<br \/>\nMme. Marie-Paule BESLAND \u2013 CNRS research director (IMN, Nantes)<br \/>\nM. Gaudenzio MENEGHESSO \u2013 Professor (Universit\u00e0 di Padova)<br \/>\nM. Tuami LASRI \u2013 Professor (Universit\u00e9 de Lille)Thesis Director:<br \/>\nM. Farid MEDJDOUB \u2013 CNRS senior scientist (IEMN)Invited:<br \/>\nM. Yvon CORDIER \u2013 CNRS research director (CRHEA)<\/li>\n<\/ul>\n<h5>Summary:<\/h5>\n<p>Les semi-conducteurs \u00e0 large bande interdite (WBG) tels que le SiC et le GaN pr\u00e9sentent des propri\u00e9t\u00e9s physiques sup\u00e9rieures \u00e0 celles du silicium. Cependant, les mat\u00e9riaux ou di\u00e9lectriques \u00e0 bande interdite encore plus large, tels que le nitrure d\u2019aluminium et de gallium (AlGaN) ou le nitrure d\u2019aluminium (AlN), permettent de cr\u00e9er des h\u00e9t\u00e9rojonctions tout en \u00e9largissant consid\u00e9rablement les possibilit\u00e9s de conception des dispositifs pour les syst\u00e8mes de conversion d\u2019\u00e9nergie \u00e0 moyenne\/haute puissance. Cette th\u00e8se se concentre sur la d\u00e9monstration de semi-conducteurs \u00e0 bande passante ultra-large (UWBG) pour le d\u00e9veloppement de transistors \u00e0 effet de champ (FET) \u00e0 haute tension. Dans ce contexte, une approche bas\u00e9e sur la r\u00e9duction de l\u2019\u00e9paisseur du canal GaN a \u00e9t\u00e9 d\u00e9velopp\u00e9e sur des substrats d\u2019AlN. L\u2019\u00e9volution de la densit\u00e9 de courant \u00e0 l\u2019\u00e9tat passant et de la tension de claquage a \u00e9t\u00e9 r\u00e9alis\u00e9e avec diff\u00e9rentes \u00e9paisseurs de canaux GaN. Un champ de claquage lat\u00e9ral \u00e9lev\u00e9 de l\u2019AlN allant jusqu\u2019\u00e0 10MV\/cm a \u00e9t\u00e9 d\u00e9montr\u00e9 exp\u00e9rimentalement. D\u2019autre part, l\u2019int\u00e9gration de substrats d\u2019AlN dans les fonderies de silicium actuelles est un d\u00e9fi. On peut donc dire que \u00ab\u00a0ce qui peut \u00eatre d\u00e9velopper sur silicium sera d\u00e9velopper sur silicium\u00a0\u00bb. Pour relever ce d\u00e9fi, nous avons adopt\u00e9 une approche visant \u00e0 d\u00e9montrer de nouveaux HFET \u00e0 base de canaux AlGaN sur substrat de silicium pour des applications \u00e0 haute tension. L\u2019impact de la composition en Al des couches de barri\u00e8re et du canal sur les performances \u00e9lectriques et thermiques de divers HFET AlGaN\/AlGaN a \u00e9t\u00e9 \u00e9tudi\u00e9. Par la suite, nous avons d\u00e9montr\u00e9 la robustesse des HFET \u00e0 canal AlGaN sur AlN massif, appropri\u00e9s \u00e0 l\u2019\u00e9lectronique de puissance en conditions extremes et une tension d\u2019operation sup\u00e9rieure \u00e0 2 kV. Le principal d\u00e9fi pour les HFET \u00e0 base d\u2019AlGaN est de minimiser les r\u00e9sistances de contacts de source et de drain. Nous avons pu d\u00e9montrer une densit\u00e9 de courant \u00e9lev\u00e9e (&gt; 0,2 A\/mm) ainsi que des transistors \u00e0 canal AlGaN riche en Al sur substrat de silicium avec un champ \u00e9lectrique de claquage moyen sup\u00e9rieur \u00e0 4 MV\/cm. Ces r\u00e9sultats mettent en evidence une approche prometteuse qui pourrait potentiellement conduire \u00e0 des solutions pour une \u00e9lectronique de puissance plus durable et plus efficace avec des dimensions de dispositifs r\u00e9duites ainsi que des capacit\u00e9s de fonctionnement \u00e0 haute tension\/haute temperature accrues.<\/p>\n<h5>Abstract:<\/h5>\n<p>Abstract : Wide Bandgap Semiconductors (WBG) such as SiC and GaN show superior material properties to Silicon. However, the even wider bandgap material or dielectric such as Aluminum Gallium Nitride (AlGaN) or Aluminium Nitride (AlN) material system gives the flexibility of creating heterojunctions while dramatically broadening the device design space for medium\/high power conversion systems. This thesis will focus on the demonstration of Ultrawide Bandgap (UWBG) semiconductors for developing high-voltage FETs. In this context, an approach based on downsizing GaN channel thickness grown on bulk AlN substrates has been developed. The evolution of on-state current density and breakdown voltage has been realized with different GaN channel thicknesses. A high AlN lateral breakdown field of up to 10MV\/cm has been experimentally demonstrated. On the other hand, the integration of bulk AlN substrates to current silicon foundries is challenging. Thus, it can be said that \u201c What can be done on silicon, will be done on Silicon.\u201d Addressing this challenge, we took an approach toward the demonstration of novel AlGaN channel-based HFETs on Silicon for high-voltage applications. The impact of Al composition in the barrier and channel layers on the electrical and thermal performance of various AlGaN\/AlGaN HFETs has been studied. Later, we demonstrate robust AlGaN channel HFETs on bulk AlN suitable for extreme power electronics with more than 2kV breakdown voltage. The major challenge for AlGaN-based HFETs is to develop ohmic contact to the channel which we addressed by demonstrating high current density (&gt;0.2 A\/mm) Al-rich AlGaN channel HFETs on silicon with more than 4 MV\/cm average transistor breakdown electric field. This ongoing development in AlGaN HFETs highlights a promising direction that potentially leads to more sustainable and efficient power electronic solutions with smaller device dimensions along with better high voltage\/high-temperature operation capabilities.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":69376,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[8],"tags":[],"class_list":["post-65982","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/65982","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=65982"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/65982\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/69376"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=65982"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=65982"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=65982"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}