{"id":64851,"date":"2024-06-13T10:47:29","date_gmt":"2024-06-13T08:47:29","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=64851"},"modified":"2024-07-23T16:06:20","modified_gmt":"2024-07-23T14:06:20","slug":"these-elodie-carneiro-optimization-of-gan-on-silicon-technology-for-rf-power-applications","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/a-la-une\/these-elodie-carneiro-optimization-of-gan-on-silicon-technology-for-rf-power-applications.html","title":{"rendered":"THESIS: ELODIE CARNEIRO - \"Optimization of GaN on Silicon Technology for RF Power Applications"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_1i9mazziytagc\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-64851'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-lxd0gkm3-764d9abddbcf5cd48c39a0b63c9d40df\">\n#top .av-special-heading.av-lxd0gkm3-764d9abddbcf5cd48c39a0b63c9d40df{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-lxd0gkm3-764d9abddbcf5cd48c39a0b63c9d40df .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-lxd0gkm3-764d9abddbcf5cd48c39a0b63c9d40df .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-lxd0gkm3-764d9abddbcf5cd48c39a0b63c9d40df av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first  av-linked-heading'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESIS: ELODIE CARNEIRO - \"Optimization of GaN on Silicon Technology for RF Power Applications<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2271122c13c04ea783daa51e49a51efc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p>ELODIE CARNEIRO<\/p>\n<p><strong>Le 18 Juin 2024 \u00e0 13h30<br \/>\n<\/strong>Amphitheatre of the IEMN-Laboratoire central - Villeneuve d'Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-9fec7348e3988ab1a6ae2de54500dd60'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<ul>\n<li>Reviewer:<br \/>\n\u2022 Prof. Andrei VESCAN (Aachen University)<br \/>\n\u2022 Prof. Bertrand BOUDART (University of Caen Normandy)<br \/>\nThesis Directors:<br \/>\n\u2022 Dr. Farid MEDJDOUB (CNRS Researcher, HDR at IEMN)<br \/>\n\u2022 Dr. Fabrice SEMOND (CNRS Research Director at CRHEA)<br \/>\nExaminers:<br \/>\n\u2022 Dr. Magali MORALES (Associate Professor at CIMAP-ENSICAEN)<br \/>\n\u2022 Dr. St\u00e9phanie RENNESSON (Engineer at EasyGaN)<br \/>\n\u2022 Dr. Philippe FELLON (Engineer at UMS)<br \/>\n\u2022 Prof. Katir ZIOUCHE (University of Lille)<\/li>\n<\/ul>\n<h5>Summary:<\/h5>\n<p>L\u2019av\u00e8nement des t\u00e9l\u00e9communications 5G et au-del\u00e0 exige des \u00e9quipements robustes capables de fournir une densit\u00e9 de puissance de sortie sup\u00e9rieure \u00e0 des fr\u00e9quences \u00e9lev\u00e9es, en particulier dans le spectre des ondes millim\u00e9triques allant de 24 GHz \u00e0 94 GHz et au-del\u00e0. Cela n\u00e9cessite des amplificateurs de puissance bas\u00e9s sur le nitrure de gallium (GaN) au lieu des traditionnels silicium (Si) et ars\u00e9niure de gallium (GaAs) utilis\u00e9s dans les g\u00e9n\u00e9rations pr\u00e9c\u00e9dentes. Le succ\u00e8s du GaN dans l\u2019\u00e9clairage et son potentiel dans les microLED, l\u2019\u00e9lectronique de puissance et les technologies micro-ondes, y compris les r\u00e9seaux 5G, soulignent son importance. Le SiC est g\u00e9n\u00e9ralement le substrat pr\u00e9f\u00e9r\u00e9 en raison de sa conductivit\u00e9 thermique \u00e9lev\u00e9e, mais il n\u2019est pas adapt\u00e9 aux applications \u00e0 haut volume en raison de son co\u00fbt et de sa faible disponibilit\u00e9. Bien que plus difficile du point de vue de la croissance, l\u2019utilisation d\u2019un substrat Si rentable r\u00e9soudrait le probl\u00e8me de l\u2019\u00e9quilibre performance\/fiabilit\u00e9\/co\u00fbt. Habituellement, des couches tampons \u00e9paisses (plusieurs \u00b5m) sont utilis\u00e9es pour minimiser la densit\u00e9 des d\u00e9fauts de croissance\/dislocations en raison de l\u2019important d\u00e9calage de r\u00e9seau entre le GaN et le substrat Si. Cependant, les couches tampons \u00e9paisses d\u00e9gradent la dissipation thermique et augmentent le co\u00fbt de l\u2019\u00e9pi-wafer. Par cons\u00e9quent, le d\u00e9fi r\u00e9side dans l\u2019h\u00e9t\u00e9ro-int\u00e9gration de couches minces \u00e0 base de nitrure avec des substrats de Si en raison de la complexit\u00e9 de la croissance et de l\u2019inad\u00e9quation du r\u00e9seau des mat\u00e9riaux. Malgr\u00e9 deux d\u00e9cennies de recherche, la production en masse de composants RF GaN-sur-Si reste difficile \u00e0 r\u00e9aliser. Pour y rem\u00e9dier, une nouvelle approche utilisant l\u2019\u00e9pitaxie par jets mol\u00e9culaires (MBE) sur des substrats en Si est propos\u00e9e, visant le march\u00e9 de la 5G. Cette collaboration industrielle de doctorat entre le laboratoire IEMN et EasyGaN vise \u00e0 d\u00e9velopper la technologie GaN submicronique sur Si pour des applications \u00e0 haute fr\u00e9quence jusqu\u2019\u00e0 la bande W. Le projet se concentre sur la cr\u00e9ation d\u2019une technologie robuste pour la fabrication de composants RF sur Si. Le projet se concentre sur la cr\u00e9ation d\u2019une technologie robuste avec des performances sup\u00e9rieures tout en att\u00e9nuant les effets thermiques et de pi\u00e9geage. La th\u00e8se rappelle les principes fondamentaux des HEMT \u00e0 base de GaN pour les applications \u00e0 ondes millim\u00e9triques, en mettant l\u2019accent sur les techniques de croissance et l\u2019optimisation des dispositifs. Les m\u00e9thodologies de fabrication et de caract\u00e9risation des dispositifs, y compris les tests \u00e0 haute fr\u00e9quence jusqu\u2019\u00e0 40 GHz, sont d\u00e9taill\u00e9es. Les efforts d\u2019optimisation portent notamment sur les couches tampons et les barri\u00e8res, l\u2019accent \u00e9tant mis sur l\u2019am\u00e9lioration du gain de puissance et des performances des transistors. Dans ce travail, le d\u00e9veloppement d\u2019une \u00e9paisseur totale de tampon inf\u00e9rieure \u00e0 650 nm avec des couches \u00e9tag\u00e9es riches en Al sur un substrat de Si permet une combinaison unique de faibles effets de pi\u00e9geage d\u2019\u00e9lectrons, de faibles courants de fuite et d\u2019une extr\u00eame robustesse sous un champ \u00e9lectrique \u00e9lev\u00e9. En outre, l\u2019utilisation d\u2019une barri\u00e8re d\u2019AlN ultramince combin\u00e9e \u00e0 ce tampon innovant a permis un gain de puissance \u00e9lev\u00e9 en ondes millim\u00e9triques. Ceci, \u00e0 son tour, permet un excellent fonctionnement de polarisation de classe AB \u00e0 40 GHz (jusqu\u2019\u00e0 VDS = 30 V) pour des longueurs de grille de 140 nm, promettant une fiabilit\u00e9 RF et des HEMT AlN\/GaN-sur-Si ultraminces potentiellement stables en fonctionnement \u00e0 haute puissance. Enfin, une technique de gestion thermique est introduite pour am\u00e9liorer les performances RF. Ces projets repr\u00e9sentent une \u00e9tape cruciale vers la r\u00e9alisation d\u2019une technologie GaN-sur-Si rentable, essentielle pour faire progresser les futurs composants \u00e9lectroniques dans les applications de t\u00e9l\u00e9communications.<\/p>\n<h5>Abstract:<\/h5>\n<p>The advent of 5G and beyond telecommunications demands robust equipment capable of delivering superior output power density at high frequencies, particularly within the millimeter-wave spectrum ranging from 24 GHz to 94 GHz and beyond. This requires power amplifiers based on Gallium Nitride (GaN) instead of traditional Silicon (Si) and Gallium Arsenide (GaAs) employed in previous generations. GaN success in lighting and its potential in microLEDs, power electronics, and microwave technologies, including 5G networks, emphasizes its significance. SiC is generally the preferred substrate due to its high thermal conductivity, however not suitable for high volume applications because of the cost and low availability. Although more challenging from growth point of view, the use of cost effective Si substrate would solve the performance \/ reliability \/ cost balance. Usually, thick buffer layers (several \u00b5m) are used to minimize growth defect\/dislocation density due to the large lattice mismatch between GaN and the Si substrate. However, thick buffer layers degrade the thermal dissipation and increase the epi-wafer cost. Therefore, the challenge lies in the hetero-integration of thin Nitride-based layers with Si substrates due to the growth complexity and material lattice mismatch. Despite two decades of research, mass-production of GaN-on-Si RF components remains elusive. To address this, a novel approach utilizing molecular beam epitaxy (MBE) on Si substrates is proposed, targeting the 5G market. This industrial Ph.D. collaboration between IEMN laboratory and EasyGaN aims to develop submicron GaN technology on Si for high-frequency applications up to W-band. The project focuses on creating a robust technology with superior performance while mitigating thermal and trapping effects. The thesis reminds the fundamentals of GaN-based HEMT for millimeter-wave applications, emphasizing growth techniques and device optimization. Methodologies for device fabrication and characterization, including high-frequency tests up to 40 GHz, are detailed. Optimization efforts include buffer and barrier layers, with a focus on enhancing power gain and transistor performance. In this work, the development of a total buffer thickness below 650 nm with Al-rich step-graded layers on Si substrate enables a unique combination of low electron trapping effects, low leakage current and extreme robustness under high electric field. Furthermore, the use of ultrathin AlN barrier combined with this innovative buffer allowed for high millimeter-wave power gain. This, in turn, enables excellent class AB bias operation at 40 GHz (up to VDS = 30 V) for 140 nm gate lengths, promising RF reliability and potentially stable ultrathin AlN\/GaN-on-Si HEMTs under high-power operation. Finally, a thermal management technique is introduced to enhance RF performances. These projects signify a crucial step towards realizing cost-effective GaN-on-Si technology, pivotal for advancing future electronic components in telecommunications applications.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":69361,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[3,87,65,84],"tags":[],"class_list":["post-64851","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-a-la-une","category-agenda-en","category-agenda","category-agenda-en-en"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/64851","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=64851"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/64851\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/69361"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=64851"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=64851"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=64851"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}