{"id":62557,"date":"2024-02-13T13:06:55","date_gmt":"2024-02-13T11:06:55","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=62557"},"modified":"2024-02-13T13:10:24","modified_gmt":"2024-02-13T11:10:24","slug":"62557","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/agenda\/62557.html","title":{"rendered":"THESE Wijden Khelifi \u00ab\u00a0Selective Growth and Characterization of InAs and InSb Nanostructures\u00a0\u00bb"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_1soxldyhw00x9\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" 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0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-62557'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-lsk8x1me-61e2a93690b9cda067b4f3e7859609e5\">\n#top .av-special-heading.av-lsk8x1me-61e2a93690b9cda067b4f3e7859609e5{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-lsk8x1me-61e2a93690b9cda067b4f3e7859609e5 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-lsk8x1me-61e2a93690b9cda067b4f3e7859609e5 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-lsk8x1me-61e2a93690b9cda067b4f3e7859609e5 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : Wijden Khelifi \u2013 Selective Growth and Characterization of InAs and InSb Nanostructures<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-jriy64i8-4dda451bdbdd11e25604daa907558144\">\n#top .av_textblock_section.av-jriy64i8-4dda451bdbdd11e25604daa907558144 .avia_textblock{\nfont-size:15px;\n}\n<\/style>\n<section  class='av_textblock_section av-jriy64i8-4dda451bdbdd11e25604daa907558144'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>Wijden Khelifi<\/strong><\/p>\n<p>Soutenance : 15 f\u00e9vrier 2024 \u00e0 10h00<strong><br \/>\n<\/strong>IEMN Amphitheatre - Central Laboratory - Villeneuve d'Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<ul>\n<li>Yamina Andr\u00e9 (Ma\u00eetre de conf\u00e9rences, Institut Pascal, Universit\u00e9 Clermont-Ferrand) : rapporteure<\/li>\n<li>Bertrand Kierren (Professeur, Institut Jean Lamour, Universit\u00e9 de Lorraine) : rapporteur<\/li>\n<li>Hermann Sellier (Ma\u00eetre de conf\u00e9rences, Institut N\u00e9el, Universit\u00e9 Joseph Fourrier) : examinateur<\/li>\n<li>Xavier Wallart (DR, IEMN CNRS) : examinateur<\/li>\n<li>Bruno Grandidier (DR IEMN, CNRS) : co-encadrant<\/li>\n<li>Ludovic Desplanque (Ma\u00eetre de conf\u00e9rences, IEMN Univ. Lille) : directeur de th\u00e8se<\/li>\n<\/ul>\n<h5>Summary:<\/h5>\n<p>Les compos\u00e9s d\u2019ars\u00e9niure et d\u2019antimoniure d\u2019indium figurent parmi les candidats les plus prometteurs pour la conception de dispositifs quantiques, gr\u00e2ce \u00e0 leurs propri\u00e9t\u00e9s \u00e9lectroniques sup\u00e9rieures telles que la haute mobilit\u00e9 des \u00e9lectrons et le faible gap \u00e9nerg\u00e9tique. Cependant, leur d\u00e9ploiement est souvent entrav\u00e9 par le d\u00e9saccord de maille qu\u2019ils poss\u00e8dent avec les substrats III-V conventionnels et qui les rend d\u00e9fectueux. Cette th\u00e8se propose une solution pour fabriquer des nanostructures d\u2019InAs et d\u2019InSb de bonne qualit\u00e9, gr\u00e2ce \u00e0 une croissance s\u00e9lective par \u00e9pitaxie par jets mol\u00e9culaires dans des ouvertures de SiO2.<br \/>\nUne \u00e9tude structurale et morphologique de couches bi-dimensionnelles et de nanofils d\u2019InAs et InSb sur des substrats de GaAs ou d\u2019InP orient\u00e9s suivant les directions [001] et [111] a \u00e9t\u00e9 r\u00e9alis\u00e9e. L\u2019optimisation des param\u00e8tres de croissance a conduit \u00e0 la fabrication de nanostructures planaires continues et facett\u00e9es avec une minimisation des d\u00e9fauts d\u2019interface. Ces syst\u00e8mes ont ensuite \u00e9t\u00e9 \u00e9tudi\u00e9s\u00a0 par microscopie \u00e0 effet tunnel \u00e0 quatre pointes en ultravide, technique qui permet de s\u2019astreindre de la fabrication d\u2019\u00e9lectrodes pour caract\u00e9riser les propri\u00e9t\u00e9s de transport. La comparaison du transport dans des nanofils InAs reconstruits en surface et des nanofils c\u0153ur-coquille InAs\/GaSb a r\u00e9v\u00e9l\u00e9 l\u2019int\u00e9r\u00eat d\u2019une encapsulation des nanofils d\u2019InAs pour augmenter sensiblement la mobilit\u00e9 \u00e9lectronique dans les nanofils.<br \/>\nContrairement aux nanofils d\u2019InAs, qui peuvent \u00eatre prot\u00e9g\u00e9s par une fine couche d\u2019arsenic pour \u00e9viter l\u2019oxydation de leur surface pendant leurs transferts \u00e0 l\u2019air, il n\u2019existe pas de protection efficace pour l\u2019InSb. Aussi, la derni\u00e8re partie de la th\u00e8se porte sur la caract\u00e9risation de la d\u00e9soxydation des surface d\u2019InSb (001) et (111) en combinant la spectroscopie Raman et la microscopie \u00e0 effet tunnel. Cette derni\u00e8re \u00e9tude ouvre la voie \u00e0 des mesures ult\u00e9rieures de transport de nanofils InSb par microscopie \u00e0 effet tunnel \u00e0 quatre pointes.<br \/>\nEn conclusion, la qualit\u00e9 structurale et \u00e9lectronique des nanofils d\u2019InAs et InSb r\u00e9alis\u00e9e dans ce travail est compatible avec le r\u00e9gime de transport balistique. Ces r\u00e9sultats jettent les bases \u00e0 la fabrication de structures III-V plus complexes actuellement recherch\u00e9es pour la conception de dispositifs quantiques.<\/p>\n<p><em>Mots cl\u00e9s : InAs et InSb, h\u00e9t\u00e9rostructures III-V, nanofils, \u00e9pitaxie par jets mol\u00e9culaires par croissance s\u00e9lective, microscopie \u00e0 effet tunnel \u00e0 pointes multiples, transport \u00e9lectronique.<\/em><\/p>\n<h5>Abstract:<\/h5>\n<p>In the landscape of quantum device fabrication, the semiconductor compounds indium arsenide (InAs) and indium antimonide (InSb) have emerged as materials of significant interest for telecommunications and optoelectronics. More recently, their excellent electron transport characteristics, characterized by high mobility and a narrow energy bandgap, render them highly conducive for applications that exploit quantum transport phenomena. However, their deployment is often hampered by the lattice mismatch they possess with conventional III-V substrates, making them defective. This thesis proposes a solution for fabricating good-quality in-plane InAs and InSb nanostructures, using selective area growth by molecular beam epitaxy in SiO2 apertures.<br \/>\nA structural and morphological study of InAs and InSb two-dimensional layers and nanowires on GaAs and InP substrates oriented along the [001] and [111] directions has been carried out. The optimization of the growth parameters led to the fabrication of continuous and faceted planar nanostructures with minimized interfacial defects. These systems were then studied by four-tip scanning tunnelling microscopy in ultra-high vacuum, a technique that eliminates the need for electrode fabrication to characterize the transport properties. The comparison of transport in surface-reconstructed InAs nanowires and core-shell InAs\/GaSb nanowires revealed the benefits of embedding the InAs nanowires to significantly increase the electron mobility in the nanowires.<br \/>\nUnlike the InAs nanowires, which can be protected by a thin layer of arsenic to prevent their surface oxidation during their transfer to air, there is no effective protection for InSb. The final part of the thesis therefore focuses on characterizing the deoxidation of InSb (001) and (111) surfaces using a combination of Raman spectroscopy and scanning tunnelling microscopy. This latter study paves the way for subsequent measurements of the transport in InSb nanowires by four-tip scanning tunnelling microscopy.<br \/>\nIn conclusion, the structural and electronic quality of the InAs and InSb nanowires produced in this work is compatible with the ballistic transport regime. These results lay down the foundations for the fabrication of the more complex III-V structures, highly prized for the design of quantum devices.<\/p>\n<p><em>Key words: InAs, InSb, III-V heterostructures, nanowires, quantum transport, selective area epitaxial growth, multiple-tip scanning tunneling microscopy, transport measurements.<\/em><\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":62562,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[65,87,84,187,318],"tags":[],"class_list":["post-62557","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-agenda","category-agenda-en","category-agenda-en-en","category-annonces-these","category-these-2023"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/62557","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=62557"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/62557\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/62562"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=62557"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=62557"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=62557"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}