{"id":61236,"date":"2023-12-05T10:31:37","date_gmt":"2023-12-05T08:31:37","guid":{"rendered":"https:\/\/www.iemn.fr\/articles-temporaires-anglais\/un-materiau-bidimensionnel-a-grande-echelle-pour-des-applications-neuromorphiques-2.html"},"modified":"2024-01-11T12:49:43","modified_gmt":"2024-01-11T10:49:43","slug":"a-large-scale-two-dimensional-material-for-neuromorphic-applications","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/newsletter\/a-large-scale-two-dimensional-material-for-neuromorphic-applications.html","title":{"rendered":"A large-scale two-dimensional material for neuromorphic applications"},"content":{"rendered":"<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-p6o77r-7bd154b309bd749cbb57f5c600a2b602\">\n.flex_column.av-p6o77r-7bd154b309bd749cbb57f5c600a2b602{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-p6o77r-7bd154b309bd749cbb57f5c600a2b602 av_one_full  avia-builder-el-0  el_before_av_hr  avia-builder-el-first  first flex_column_div av-zero-column-padding'     ><section  class='av_textblock_section av-lps37bux-f03c8f1be205157f60a780272dda9a9a'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><h1 style=\"text-align: center;\"><\/h1>\n<h1 style=\"text-align: center;\"><b><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel3-1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-61233 size-full aligncenter\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel3-1.jpg\" alt=\"\" width=\"800\" height=\"75\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel3-1.jpg 800w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel3-1-300x28.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel3-1-768x72.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel3-1-18x2.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel3-1-705x66.jpg 705w\" sizes=\"auto, (max-width: 800px) 100vw, 800px\" \/><\/a><\/b><b>A large-scale two-dimensional material<br \/>\nfor neuromorphic applications<\/b><\/h1>\n<h1 style=\"text-align: center;\"><\/h1>\n<\/div><\/section><\/div>\n<div  class='hr av-lps4coye-15e16a2c112b56ec7e309787651112a8 hr-default  avia-builder-el-2  el_after_av_one_full  el_before_av_textblock'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-lps3ct08-6a2ca5ecc4eaa06a740dabcdee350aad'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><blockquote>\n<p><strong><span style=\"color: #993300;\">Mott materials are quantum materials whose resistive switching properties are analogous to the electrical response of biological neurons. A two-dimensional Mott material, TaSe2, recently discovered in its monolayer form, has been fabricated at IEMN by epitaxy on an industrial gallium phosphide (GaP) substrate. The electrical continuity of the monosheet has been demonstrated on a macroscopic scale, and the resistive switching property has been detected on a nanometric scale. This result opens up promising prospects for low-impact, energy-efficient electronics.<\/span><\/strong><\/p>\n<\/blockquote>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-61195 size-full aligncenter\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel.jpg\" alt=\"\" width=\"800\" height=\"241\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel.jpg 800w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel-300x90.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel-768x231.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel-18x5.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/12\/materiau_bidimensionnel-705x212.jpg 705w\" sizes=\"auto, (max-width: 800px) 100vw, 800px\" \/><\/a><\/p>\n<\/div><\/section>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-135tmjr-d659c804c48744acbee5fd7d5972710f\">\n.flex_column.av-135tmjr-d659c804c48744acbee5fd7d5972710f{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-135tmjr-d659c804c48744acbee5fd7d5972710f av_one_half  avia-builder-el-4  el_after_av_textblock  el_before_av_one_half  first flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-lps3un2v-5f018424476dc271da813aabb37e500e'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><p style=\"text-align: left;\"><strong>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-wzsvks-517bfaf9893ade785ca8d3206b5187d8\">\n.av_font_icon.av-wzsvks-517bfaf9893ade785ca8d3206b5187d8{\ncolor:#993300;\nborder-color:#993300;\n}\n.av_font_icon.av-wzsvks-517bfaf9893ade785ca8d3206b5187d8 .av-icon-char{\nfont-size:25px;\nline-height:25px;\n}\n<\/style>\n<span  class='av_font_icon av-wzsvks-517bfaf9893ade785ca8d3206b5187d8 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue889' data-av_iconfont='entypo-fontello' ><\/span><\/span> Quantum materials<\/strong> represent a broad class of materials in which strong electron interactions give rise to collective quantum electronic effects such as superconductivity, magnetism or resistive switching.<br \/>\nTo enhance electronic interactions, we can typically use materials where the atoms have a large number of valence electrons (transition metals), or limit the dimensionality of the crystal to confine the electrons (2D materials, 1D materials, quantum dots).<br \/>\nThe properties of quantum materials hold great potential for the development of innovative electronic components. In particular, electrical pulse-induced resistive switching in so-called Mott materials can mimic certain neuromorphic functions: the change in resistance state obtained following a series of electrical pulses is analogous to the response of a biological neuron <em>[1]<\/em>.<\/p>\n<p><strong>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-wzsvks-517bfaf9893ade785ca8d3206b5187d8\">\n.av_font_icon.av-wzsvks-517bfaf9893ade785ca8d3206b5187d8{\ncolor:#993300;\nborder-color:#993300;\n}\n.av_font_icon.av-wzsvks-517bfaf9893ade785ca8d3206b5187d8 .av-icon-char{\nfont-size:25px;\nline-height:25px;\n}\n<\/style>\n<span  class='av_font_icon av-wzsvks-517bfaf9893ade785ca8d3206b5187d8 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue889' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/strong><strong>One of today&rsquo;s major challenges is to integrate these materials into the existing large-scale microelectronics industry<\/strong>, based on technologies specific to silicon substrates and III-V semiconductors such as GaAs and GaP. The challenge lies in both manufacturing and controlling the electronic properties of these materials on a large scale.<br \/>\nAt the IEMN, an equipment dedicated to the synthesis of chalcogenide materials by molecular jet epitaxy, installed in 2020, has made it possible to fabricate layers of a two-dimensional Mott material discovered in 2021, 1T-TaSe2. Until now, this two-dimensional material, which is difficult to fabricate in crystalline form, had only been obtained on metal substrates. These substrates considerably reduce application possibilities, since they short-circuit the active material. Against this background, <strong>the EPIPHY group succeeded in fabricating TaSe2 monolayers on a III-V semiconductor substrate, gallium phosphide. These layers have been multi-scale characterized by the PHYSIQUE group.<\/strong><\/p>\n<\/div><\/section><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-p8zsh3-6f007c292b31cefb8678f038cdc94986\">\n.flex_column.av-p8zsh3-6f007c292b31cefb8678f038cdc94986{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-p8zsh3-6f007c292b31cefb8678f038cdc94986 av_one_half  avia-builder-el-8  el_after_av_one_half  avia-builder-el-last  flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-lps3un2v-5f018424476dc271da813aabb37e500e'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><p><strong>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-wzsvks-517bfaf9893ade785ca8d3206b5187d8\">\n.av_font_icon.av-wzsvks-517bfaf9893ade785ca8d3206b5187d8{\ncolor:#993300;\nborder-color:#993300;\n}\n.av_font_icon.av-wzsvks-517bfaf9893ade785ca8d3206b5187d8 .av-icon-char{\nfont-size:25px;\nline-height:25px;\n}\n<\/style>\n<span  class='av_font_icon av-wzsvks-517bfaf9893ade785ca8d3206b5187d8 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue889' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/strong>Crystalline quality was confirmed by tunnel microscopy measurements. The expected crystal structure was observed, as was the charge density wave-like electronic modulation characteristic of this compound. In addition, a Moir\u00e9 effect between the TaSe2 and the GaP substrate has been demonstrated, attesting to the fact that the layer is indeed a single layer of the material composed of a Ta atom between two Se atoms.<br \/>\nThe Mott phase is at the origin of a bandgap of around one hundred millielectronvolts, which has been detected both at nanoscale by tunneling spectroscopy, and by cryogenic transport measurements. This study benefits from the acquisition in 2022 at IEMN of a cryogenic device enabling rapid characterization of electrical transport properties.<br \/>\nGenerally speaking, it is currently difficult to obtain the extensive crystalline atomic layers required for industrialization. <strong>Monolayers of 1T-TaSe2 exhibit homogeneous electrical properties over several millimeters. Finally, we have observed the first signature of a resistive switching effect under the effect of an electric field, on a nanometric scale.<\/strong> These results <em>[2] <\/em>pave the way for the use of TaSe2 atomic layers in the large-scale production of ultra-compact neuromorphic components.<\/p>\n<p><span style=\"color: #993300;\"><em>References<\/em><\/span><br \/>\n<em> [1] Stoliar, P.; Tranchant, J.; Corraze, B.; Janod, E.; Besland, M.-P.; Tesler, F.; Rozenberg, M.; Cario, L. A Leaky-Integrate-and-Fire Neuron Analog Realized with a Mott Insulator. <i>Adv. Funct. Mater.<\/i> <b>2017<\/b>, <i>27<\/i>\u00a0(11), 1604740. <a id=\"OWA5fc5d72b-b494-bce5-9d09-7432c0807584\" class=\"OWAAutoLink\" href=\"https:\/\/doi.org\/10.1002\/adfm.201604740\">https:\/\/doi.org\/10.1002\/adfm.201604740<\/a>.<\/em><\/p>\n<p><em>[2] Koussir, H.; Chernukha, Y.; Sthioul, C.; Haber, E.; Peric, N.; Biadala, L.; Capiod, P.; Berthe, M.; Lefebvre, I.; Wallart, X.; Grandidier, B.; Diener, P. Large-Area Epitaxial Mott Insulating 1T-TaSe2 Monolayer on GaP(111)B. <i>Nano Lett.<\/i> <b>2023<\/b>. <a id=\"OWAebe91f2f-69df-5993-1124-41990544568a\" class=\"OWAAutoLink\" href=\"https:\/\/doi.org\/10.1021\/acs.nanolett.3c02813\">https:\/\/doi.org\/10.1021\/acs.nanolett.3c02813<\/a>.<\/em><\/p>\n<div  class='avia-button-wrap av-rpqvoq-14cdd2ef6a58b771db0a163a5de0f5c1-wrap avia-button-left  avia-builder-el-11  el_after_av_font_icon  el_before_av_font_icon'><a href='mailto:pascale.diener@junia.com'  class='avia-button av-rpqvoq-14cdd2ef6a58b771db0a163a5de0f5c1 av-link-btn avia-icon_select-yes-left-icon avia-size-small avia-position-left avia-color-silver'   aria-label=\"pascale.diener@junia.com\"><span class='avia_button_icon avia_button_icon_left' aria-hidden='true' data-av_icon='\ue805' data-av_iconfont='entypo-fontello'><\/span><span class='avia_iconbox_title' >pascale.diener@junia.com<\/span><\/a><\/div>\n<p><strong>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-wzsvks-3ddca1b12a3d1f6a2d2e6788089b34df\">\n.av_font_icon.av-wzsvks-3ddca1b12a3d1f6a2d2e6788089b34df{\ncolor:#993300;\nborder-color:#993300;\n}\n.av_font_icon.av-wzsvks-3ddca1b12a3d1f6a2d2e6788089b34df .av-icon-char{\nfont-size:25px;\nline-height:25px;\n}\n<\/style>\n<span  class='av_font_icon av-wzsvks-3ddca1b12a3d1f6a2d2e6788089b34df avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue826' data-av_iconfont='entypo-fontello' ><\/span><\/span><span style=\"color: #993300;\">Website links:<\/span><\/strong><br \/>\n<a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/epiphy\/\">https:\/\/www.iemn.fr\/la-recherche\/les-groupes\/epiphy<\/a><br \/>\n<a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/epiphy\/\">https:\/\/www.iemn.fr\/la-recherche\/les-groupes\/physique<\/a><\/p>\n<\/div><\/section><\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[297],"tags":[],"class_list":["post-61236","post","type-post","status-publish","format-standard","hentry","category-newsletter"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/61236","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=61236"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/61236\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=61236"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=61236"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=61236"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}