{"id":60899,"date":"2023-11-21T16:20:05","date_gmt":"2023-11-21T14:20:05","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=60899"},"modified":"2024-06-21T16:50:39","modified_gmt":"2024-06-21T14:50:39","slug":"these-hafsa-ikzibane-dispositifs-de-metrologie-integree-pour-letude-des-proprietes-de-transport-dans-les-nanostructures-en-silicium-vers-une-metrologie-directe-de-zt-basee-sur-la-technique-tran","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/actualites\/these-hafsa-ikzibane-dispositifs-de-metrologie-integree-pour-letude-des-proprietes-de-transport-dans-les-nanostructures-en-silicium-vers-une-metrologie-directe-de-zt-basee-sur-la-technique-tran.html","title":{"rendered":"THESIS: Hafsa IKZIBANE- \"Integrated Metrology Devices for the Study of Transport Properties in Silicon Nanostructures Towards a direct metrology of zT based on the Harman transient technique\"."},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_1t6a9l4c8ajn1\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-60899'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-lp8ecpwm-cdb25c834df5ebc9c88f25a79c9301db\">\n#top .av-special-heading.av-lp8ecpwm-cdb25c834df5ebc9c88f25a79c9301db{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-lp8ecpwm-cdb25c834df5ebc9c88f25a79c9301db .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-lp8ecpwm-cdb25c834df5ebc9c88f25a79c9301db .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-lp8ecpwm-cdb25c834df5ebc9c88f25a79c9301db av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : Hafsa IKZIBANE- \u00ab\u00a0Dispositifs de M\u00e9trologie Int\u00e9gr\u00e9e pour l\u2019Etude des Propri\u00e9t\u00e9s de Transport dans les Nanostructures en Silicium Vers une m\u00e9trologie directe de zT bas\u00e9e sur la technique transitoire de Harman\u00a0\u00bb <\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>Hafsa IKZIBANE<br \/>\n<\/strong><\/p>\n<p>Defense: November 29, 2023 at 10 a.m.<strong><br \/>\n<\/strong>IRCICA Amphitheatre - Villeneuve d'Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<br \/>\n<\/span><\/strong><\/h5>\n<p>Masahiro NOMURA, Professor, Tokyo-University, Japan, Rapporteur<\/p>\n<p>Nicolas STEIN, Senior Lecturer, Institut Jean Lamour, Nancy, Rapporteur<\/p>\n<p>Olivier BOURGEOIS, CNRS Research Director, Institut N\u00e9el, Grenoble, Examiner<\/p>\n<p>Sylvie HEBERT, CNRS Research Director, CRISMAT, Caen, Examiner<\/p>\n<p>Katir ZIOUCHE, Professor, IUT Universit\u00e9 de Lille, Lille, Examiner<\/p>\n<p>Nolwenn FLEURENCE, Ing\u00e9nieur R&amp;D, LNE, Trappes, Invit\u00e9e<\/p>\n<p>Jean-Fran\u00e7ois ROBILLARD, Lecturer-Researcher, Junia, Lille, Thesis supervisor<\/p>\n<p>Emmanuel DUBOIS, CNRS Research Director, Lille, Thesis Director<\/p>\n<h5><strong><span style=\"color: #800000;\">\u00a0<\/span><\/strong><\/h5>\n<h5>Summary:<\/h5>\n<p>In thermoelectricity, silicon nanostructures represent an attractive alternative to conventional thermoelectric materials due to their abundance, non-toxic nature and compatibility with CMOS technology. Researchers have investigated various methods for improving the zT figure of merit of silicon by increasing the \u03c3\/\u03ba ratio; decreasing the thermal conductivity \u03ba using (i) nanometric structures such as thin membranes or nanowires, (ii) using surface roughness, (iii) oxidising the surface, which results in a low value of \u03ba. However, few experimental measurements of zT on crystalline silicon nano-objects have been presented, and these data show significant scatter. Usually, the figure of merit is obtained by an independent measurement of the transport properties of the materials (\u03ba, \u03c3 and S). The uncertainty of zT can easily reach 50 %, given that each parameter has an uncertainty of 5 % to 20 %. The Harman technique is a simple and fast method for directly measuring zT in bulk materials. This thesis proposes an adaptation of the transient Harman technique for suspended crystalline nano-membranes. A correction factor is introduced to take into account the effects of radiation, contact resistances and Joule heating. In addition, an implementation of the device is presented, allowing direct access to zT through purely electrical measurements, thus eliminating the need for separate measurements of transport parameters. In addition, elementary devices are examined for determining the thermal properties of silicon, including thermal conductivity, Seebeck coefficient and electrical conductivity. The measured Seebeck coefficient, showing a similarity with bulk Si near room temperature, raises a fundamental question about the relative contributions of electron diffusion and phonon transport.<\/p>\n<h5>Abstract:<\/h5>\n<p>In thermoelectricity, silicon nanostructures represent an interesting alternative to conventional thermoelectric materials due to Si abundance, non-toxic nature, and its compatibility with CMOS technology. Researchers have investigated methods to enhance the silicon figure of merit zT by increasing the \u03c3\/\u03ba ratio; decreasing the thermal conductivity \u03ba by (i) using nanometric structure such as thin membranes or nanowires, (ii) roughening, (iii) oxidation of the surface achieved relatively low value of \u03ba. Yet, few experimental measurements of zT in crystalline silicon nano-objects were presented with important data dispersion. Usually, the thermoelectric figure of merit is obtained through independent measurement of materials transport properties (\u03ba, \u03c3 and S). The uncertainty of zT can easily reach 50% considering that each parameter has an uncertainty of 5% to 20%. Harman's technique is a simple and rapid method to measure zT directly in bulk materials. This thesis proposes an adaptation of the transient Harman technique for suspended crystalline nano-membranes. A correction factor is introduced to account for radiation, contact resistances, and Joule heating effects. Furthermore, a device implementation is presented, enabling direct access to zT through purely electrical measurements, eliminating the need for separate measurements of transport parameters. Additionally, elementary devices are examined to determine the transport properties of silicon, including thermal conductivity, Seebeck coefficient, and electrical conductivity. The measured Seebeck coefficient, showing similarity to Bulk Si near room temperature, raises a fundamental question concerning the relative contributions of electron diffusion and phonon transport.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":65998,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[8],"tags":[],"class_list":["post-60899","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/60899","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=60899"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/60899\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/65998"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=60899"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=60899"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=60899"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}