{"id":60797,"date":"2023-10-30T15:45:06","date_gmt":"2023-10-30T13:45:06","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=60797"},"modified":"2023-10-30T16:25:07","modified_gmt":"2023-10-30T14:25:07","slug":"these-rita-younes-inp-hemt-pour-les-applications-thz","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/agenda\/these-rita-younes-inp-hemt-pour-les-applications-thz.html","title":{"rendered":"THESE RITA YOUNES - InP-HEMT for THz applications"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_vqjhia76ofnx\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-60797'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-locy1pkt-5d2a082f4c133d3b59b6982c793dc04d\">\n#top .av-special-heading.av-locy1pkt-5d2a082f4c133d3b59b6982c793dc04d{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-locy1pkt-5d2a082f4c133d3b59b6982c793dc04d .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-locy1pkt-5d2a082f4c133d3b59b6982c793dc04d .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-locy1pkt-5d2a082f4c133d3b59b6982c793dc04d av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE RITA YOUNES - InP-HEMT for THz applications<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>Rita Younes<br \/>\n<\/strong><\/p>\n<p>Soutenance : 27 Octobre 2023 \u00e0 10h30 <strong><br \/>\n<\/strong>IEMN Amphitheatre - Central Laboratory - Villeneuve d'Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury<\/span><\/strong><\/h5>\n<div class=\"\">Pr.<span class=\"\">\u00a0<\/span> Sylvain BOLLAERT<span class=\"\">\u00a0<\/span><span class=\"\"> Directeur de th\u00e8se<\/span><\/div>\n<div class=\"\">Dr.<span class=\"\">\u00a0<\/span> Nicolas WICHMANN<span class=\"\">\u00a0<\/span> Co-Encadrant<\/div>\n<div class=\"\">Pr.<span class=\"\">\u00a0<\/span> Guillaume DUCOURNAU<span class=\"\">\u00a0<\/span> Examinateur<\/div>\n<div class=\"\">Dr.<span class=\"\">\u00a0<\/span> Marina DENG<span class=\"\">\u00a0<\/span> \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0<span class=\"\">\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0<\/span>Examinateur<\/div>\n<div class=\"\">Pr.<span class=\"\">\u00a0<\/span> Philippe FERRARI<span class=\"\">\u00a0<\/span> \u00a0 \u00a0 \u00a0 \u00a0<span class=\"\">\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0\u00a0<\/span>Rapporteur<\/div>\n<div class=\"\">Dr. HDR<span class=\"\">\u00a0<\/span> Bassem SALEM<span class=\"\">\u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0 \u00a0\u00a0<\/span> Rapporteur<\/div>\n<div><\/div>\n<h5>Summary:<\/h5>\n<p>Le d\u00e9veloppement de technologies III-V devrait permettre de r\u00e9pondre aux besoins du march\u00e9 qui n\u00e9cessite la conception de composants \u00e9lectriques fonctionnant dans les gammes millim\u00e9triques et submillim\u00e9triques (fr\u00e9quences THz). On peut citer par exemple le d\u00e9veloppement de cam\u00e9ra utilisant les ondes millim\u00e9triques pour la s\u00e9curit\u00e9 et le contr\u00f4le d\u2019acc\u00e8s (stade, concert, enregistrement en a\u00e9roport\u2026), le spatial, la spectroscopie\u2026Un autre champ d\u2019application important concerne les communications ultra-haut d\u00e9bit sans fil pour la t\u00e9l\u00e9phonie mobile actuelle (5G) et surtout future (6G). Il s\u2019av\u00e8re donc n\u00e9cessaire de d\u00e9velopper des transistors ayant des fr\u00e9quences de fonctionnement au THz. Les transistors HEMTs sont les meilleurs candidats en termes de performances pour le d\u00e9veloppement de circuits int\u00e9gr\u00e9s de r\u00e9ception d\u2019ondes submillim\u00e9triques. La fr\u00e9quence maximale d\u2019oscillation fmax est un param\u00e8tre important pour l\u2019amplification de ces signaux analogiques. Cette fr\u00e9quence doit \u00eatre dans la gamme du THz. Des premiers r\u00e9sultats obtenus \u00e0 l\u2019IEMN indiquent une fr\u00e9quence maximale d\u2019oscillation de 1,1THz pour des transistors HEMT InAlAs\/InGaAs\/InAs sur substrat InP. Cette fr\u00e9quence a \u00e9t\u00e9 obtenue par extrapolation du gain unilat\u00e9ral de Mason U mesur\u00e9 jusque 110GHz. Afin de valider ce r\u00e9sultat \u00e0 l\u2019\u00e9tat de l\u2019art, il est n\u00e9cessaire de le confirmer par des mesures audel\u00e0 de 110GHz, dans les gammes d\u2019ondes submillim\u00e9triques. Dans ces travaux de th\u00e8se, nous proposons une caract\u00e9risation hyperfr\u00e9quence sous pointes d\u2019un m\u00eame transistor jusque 1,1 THz. Cette caract\u00e9risation n\u00e9cessite l\u2019utilisation de plusieurs bancs de mesures sous pointes : 0.25-110GHz, 140-220GHz, 220-325GHz, 325-500GHz, 500-750GHz et 750-1100GHz. Pour cela, nous avons con\u00e7us une m\u00e9thodologie de caract\u00e9risation on-wafer large bande (250 MHz \u2013 1,1 THz) bas\u00e9e sur la m\u00e9thode d\u2019\u00e9talonnage multiline Thru-Reflect-Line (mTRL). Un kit d\u2019\u00e9talonnage mTRL a \u00e9t\u00e9 d\u00e9velopp\u00e9 \u00e0 l\u2019aide de l\u2019outils de simulation \u00e9lectromagn\u00e9tique HFSS-Ansys ; les transistors HEMTs InAlAs\/InGaAs\/InAs sur substrat InP ont \u00e9t\u00e9 optimis\u00e9s et adapt\u00e9s pour permettre cette mesure large bande. Afin de valider cette conception, le kit mTRL large bande ainsi que des HEMTs ont \u00e9t\u00e9 fabriqu\u00e9s sur substrat d\u2019InP. Les param\u00e8tres petit signal Scattering S d\u2019un transistor HEMT ont \u00e9t\u00e9 mesur\u00e9s de 250MHz \u00e0 1.1THz. A partir de ces param\u00e8tres S, nous avons pu d\u00e9terminer les principaux gains du transistor jusque 1.1THz et extraire plus pr\u00e9cis\u00e9ment les valeurs des fr\u00e9quences de coupures fT\/fmax du HEMT.<\/p>\n<h5>Abstract:<\/h5>\n<p>The development of III-V technologies should make it possible to meet market needs for electrical components operating in the millimeter and submillimeter ranges (THz frequencies). Examples include the development of cameras using millimeter waves for security and access control (stadiums, concerts, airport check-in, etc.), space applications, spectroscopy, etc. Another important field of application concerns ultra-high-speed wireless communications for current (5G) and future (6G) mobile telephony. This calls for the development of transistors with THz operating frequencies. HEMT transistors are the best candidates in terms of performance for the development of integrated circuits for receiving submillimeter waves. The maximum oscillation frequency fmax is an important parameter for amplifying these analog signals. This frequency must be in the THz range. Initial results obtained at IEMN indicate a maximum oscillation frequency of 1.1 THz for InAlAs\/InGaAs\/InAs HEMT transistors on InP substrates. This frequency was obtained by extrapolating the measured one-sided Mason U gain up to 110GHz. In order to validate this state-of-the-art result, it needs to be confirmed by measurements beyond 110GHz, in the submillimeter wave ranges. In this thesis, we are proposing a microwave characterization of a single transistor up to 1.1 THz. This characterization requires the use of several spike measurement benches: 0.25-110GHz, 140-220GHz, 220-325GHz, 325-500GHz, 500-750GHz and 750-1100GHz. To this end, we have designed a broadband (250 MHz \u2013 1.1 THz) on-wafer characterization methodology based on the multiline Thru-Reflect-Line (mTRL) calibration method. An mTRL calibration kit was developed using the HFSS-Ansys electromagnetic simulation tool; InAlAs\/InGaAs\/InAs HEMT transistors on an InP substrate were optimized and adapted to enable this broadband measurement. To validate this design, the mTRL broadband kit and HEMTs were fabricated on an InP substrate. The small signal Scattering S parameters of a HEMT transistor were measured from 250MHz to 1.1THz. From these S parameters, we were able to determine the transistor\u2019s main gains up to 1.1THz and extract more precisely the values of the HEMT\u2019s fT\/fmax cutoff frequencies.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":60798,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[87,65,84,187,318],"tags":[],"class_list":["post-60797","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-agenda-en","category-agenda","category-agenda-en-en","category-annonces-these","category-these-2023"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/60797","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=60797"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/60797\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/60798"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=60797"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=60797"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=60797"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}