{"id":56950,"date":"2023-03-23T12:59:41","date_gmt":"2023-03-23T10:59:41","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=56950"},"modified":"2023-03-23T12:59:41","modified_gmt":"2023-03-23T10:59:41","slug":"these-v-fiorese-nano-sonde-active-intelligente-pour-mesures-de-bruit-et-de-puissance-dans-la-bande-de-frequence-130-260-ghz","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/theses-2022\/these-v-fiorese-nano-sonde-active-intelligente-pour-mesures-de-bruit-et-de-puissance-dans-la-bande-de-frequence-130-260-ghz.html","title":{"rendered":"THESE V. FIORESE : \u00ab\u00a0Nano sonde active intelligente pour mesures de bruit et de puissance dans la bande de fr\u00e9quence 130-260 GHz \u00ab\u00a0"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_1solxdqxqr3vy\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-56950'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-lfl02k7u-46b747a9e041226a8ed342fc0af3c614\">\n#top .av-special-heading.av-lfl02k7u-46b747a9e041226a8ed342fc0af3c614{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-lfl02k7u-46b747a9e041226a8ed342fc0af3c614 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-lfl02k7u-46b747a9e041226a8ed342fc0af3c614 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-lfl02k7u-46b747a9e041226a8ed342fc0af3c614 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE V. FIORESE : \u00ab\u00a0Nano sonde active intelligente pour mesures de bruit et de puissance dans la bande de fr\u00e9quence 130-260 GHz \u00ab\u00a0<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>V. FIORESE<br \/>\n<\/strong><\/p>\n<p>Soutenance : 8 septembre 2022<strong><br \/>\n<\/strong>Th\u00e8se de doctorat en Electronique, micro\u00e9lectronique, nano\u00e9lectronique et micro-ondes, Universit\u00e9 de Lille, ENGSYS Sciences de l\u2019ing\u00e9nierie et des syst\u00e8mes<\/p>\n<p>Projets associ\u00e9s : Laboratoire commun STMicroelectronics-IEMN T1, RENATECH, Laboratoire commun STMicroelectronics-IEMN<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5>Summary:<\/h5>\n<p>Les technologies avanc\u00e9es sur silicium visant des Ft\/Fmax sup\u00e9rieures \u00e0 400 GHz permettent la conception de circuits sur silicium dans la plage de fr\u00e9quence 130-260 GHz. Afin de pousser le d\u00e9veloppement de ces technologies et l\u2019extraction des facteurs de m\u00e9rite des transistors tels que le facteur de bruit, l\u2019efficacit\u00e9 en puissance et leur mod\u00e9lisation, il est n\u00e9cessaire de disposer de moyens de caract\u00e9risation hyperfr\u00e9quences associ\u00e9s. \u00c0 ces fr\u00e9quences, les outils large bande tels que les sources de bruit, les r\u00e9cepteurs de bruit, les adaptateurs d\u2019imp\u00e9dances et les sondes de puissance ne sont pour l\u2019instant pas disponibles pour faire ces \u00e9tudes \u00e0 une \u00e9chelle industrielle. Plusieurs th\u00e8ses ont prouv\u00e9 la possibilit\u00e9 de placer ces fonctions de caract\u00e9risation au plus proche du composant en technologie BiCMOS 55 nm de STMicroelectronics \u00e0 tester, directement sur Silicium. Cette approche in situ montre certaines limitations notamment en termes de surface de Silicium allou\u00e9e aux seuls circuits de tests et \u00e0 la r\u00e9p\u00e9tabilit\u00e9 des mesures pour diff\u00e9rents composants. Une industrialisation des mesures est vis\u00e9e dans le cadre de cette th\u00e8se, poussant l\u2019int\u00e9gration des fonctions circuits associ\u00e9es \u00e0 la caract\u00e9risation dans des boitiers de type split blocks. Pour mener ces travaux, 3 axes d\u2019\u00e9tudes ont \u00e9t\u00e9 d\u00e9velopp\u00e9s visant la r\u00e9alisation d\u2019un bo\u00eetier fonctionnalis\u00e9 en source de bruit bande G : la conception de circuits silicium en bande G utilis\u00e9s dans la fonctionnalisation de ce bo\u00eeter, la conception de substrats organiques accueillant par assemblage flip chip les circuits silicium, enfin la conception des split blocks int\u00e9grant ces substrats. Au sujet des boitiers, les principales transitions mises en jeu ont pu \u00eatre caract\u00e9ris\u00e9es \u00e0 l\u2019aide de prototypes en configuration back-to-back. La transition de type E-plane entre la ligne strip-line suspendue du substrat et la cavit\u00e9 WR5 a pu \u00eatre caract\u00e9ris\u00e9e en bande G, mettant en \u00e9vidence un niveau de pertes d\u2019insertion moyen de 2,5 dB dans cette plage de fr\u00e9quence. De nouveaux essais d\u2019impression 3D m\u00e9tallique utilisant le proc\u00e9d\u00e9 MLS ont \u00e9galement \u00e9t\u00e9 r\u00e9alis\u00e9 au-del\u00e0 de 110 GHz pour l\u2019usinage d\u2019un guide d\u2019ondes WR5. Les pertes d\u2019insertion mesur\u00e9es en bande G sont de l\u2019ordre de 90 dB\/m contre 20 dB\/m pour des guides WR5 commerciaux. Cependant, un d\u00e9p\u00f4t de cuivre par \u00e9lectrolyse sur les faces internes de la cavit\u00e9 est rendu possible apr\u00e8s usinage et permet de rivaliser avec les guides d\u2019ondes du commerce avec des niveaux de pertes d\u2019insertion simul\u00e9es de 15 dB\/m. Cette int\u00e9gration en boitier repose sur un assemblage de type flip chip des diff\u00e9rents circuits en technologie SiGe BiCMOS 55 nm (Source de bruit, LNA, adaptation d\u2019imp\u00e9dance) sur un substrat organique multicouches ins\u00e9r\u00e9 dans des cavit\u00e9s r\u00e9alis\u00e9es par micro-usinage. Une source de bruit active a \u00e9t\u00e9 r\u00e9alis\u00e9e et mesur\u00e9e en bruit et en param\u00e8tres S en bande G, mettant en \u00e9vidence des niveaux d\u2019ENR disponibles s\u2019\u00e9chelonnant entre 0 et 37 dB. Cette source de bruit en technologie SiGe BiCMOS 55 nm pr\u00e9sente l\u2019avantage de la facilit\u00e9 d\u2019int\u00e9gration en boitier et une adaptation d\u2019imp\u00e9dance de sortie meilleure que -8 dB dans la bande de fr\u00e9quence consid\u00e9r\u00e9e, quel que soit le courant de polarisation de la diode. Finalement, des essais d\u2019assemblages de source de bruit SiGe BiCMOS 55 nm \u00e0 large gamme d\u2019ENR ont \u00e9t\u00e9 men\u00e9s. Plusieurs prototypes de boitier ont \u00e9t\u00e9 r\u00e9alis\u00e9s ainsi que les substrats d\u2019accueil des fonctions circuits associ\u00e9es. Une connectique de type bride WR5 permet de relier le boitier \u00e0 des pointes de mesures commerciales de type Infinity Waveguide Probe et cela permet d\u2019envisager la mesure des param\u00e8tres de bruit d\u2019un transistor HBT et du facteur de bruit d\u2019un LNA sous pointes. Il devient alors possible d\u2019envisager ce type de mesure \u00e0 l\u2019\u00e9chelle industrielle pour de nombreuses technologies de circuits en bande G avec ces d\u00e9veloppements propos\u00e9s de bo\u00eetier fonctionnalis\u00e9 en source de bruit.<\/p>\n<h5>Abstract:<\/h5>\n<p>Advanced silicon technologies targeting Ft\/Fmax above 400 GHz allow the design of silicon circuits in the 130-260 GHz frequency range. In order to push the development of these technologies and the extraction of transistor merit factors such as noise figure, power efficiency and their modeling, it is necessary to have associated microwave characterization tools. At these frequencies, broadband tools such as noise sources, noise receivers, impedance adapters and power probes are currently not available to perform these studies on an industrial scale. Several theses have demonstrated the possibility of placing these characterization functions as close as possible to the STMicroelectronics 55 nm BiCMOS technology device to be tested, directly on silicon. This in situ approach has some limitations, especially in terms of the Silicon area allocated to the test circuits and the repeatability of measurements for different components. An industrialization of the measurements is aimed in the framework of this thesis, pushing the integration of the circuit functions associated with the characterization in split block type boxes. To carry out these works, 3 axes of studies were developed aiming at the realization of a functionalized box in G-band noise source: the design of silicon circuits in G-band used in the functionalization of this box, the design of organic substrates hosting by flip chip assembly the silicon circuits, finally the design of split blocks integrating these substrates. Concerning the packages, the main transitions involved have been characterized with the help of prototypes in back-to-back configuration. The E-plane transition between the suspended strip-line of the substrate and the WR5 cavity has been characterized in G-band, showing an average insertion loss level of 2.5 dB in this frequency range. New metallic 3D printing tests using the MLS process have also been performed above 110 GHz for the machining of a WR5 waveguide. The measured insertion losses in G-band are of the order of 90 dB\/m against 20 dB\/m for commercial WR5 waveguides. However, an electrolytic copper deposit on the internal faces of the cavity is made possible after machining and allows to compete with commercial waveguides with simulated insertion loss levels of 15 dB\/m. This integration is based on a flip chip assembly of different circuits in 55 nm SiGe BiCMOS technology (noise source, LNA, impedance matching) on a multilayer organic substrate inserted in cavities produced by micromachining. An active noise source has been realized and measured in noise and S-parameters in G-band, showing available LNA levels ranging from 0 to 37 dB. This noise source in 55 nm SiGe BiCMOS technology has the advantage of easy integration in the package and an output impedance matching better than -8 dB in the considered frequency band, whatever the bias current of the diode. Finally, tests of 55 nm SiGe BiCMOS noise source assemblies with a wide ENR range have been conducted. Several prototypes of the package have been realized as well as the substrates for the associated circuit functions. A WR5 flange type connector allows to connect the box to commercial measurement tips such as Infinity Waveguide Probe and this allows to consider the measurement of the noise parameters of a HBT and the noise factor of an LNA under tips. It becomes then possible to consider this type of measurement on an industrial scale for many G-band circuit technologies with these proposed developments of functionalized noise source package.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[316],"tags":[],"class_list":["post-56950","post","type-post","status-publish","format-standard","hentry","category-theses-2022"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/56950","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=56950"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/56950\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=56950"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=56950"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=56950"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}