{"id":56943,"date":"2023-03-23T12:50:57","date_gmt":"2023-03-23T10:50:57","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=56943"},"modified":"2023-03-23T12:50:57","modified_gmt":"2023-03-23T10:50:57","slug":"these-brezza-e-developpement-et-evaluation-dune-nouvelle-architecture-de-transistor-bipolaire-a-heterojonction-si-sige-pour-technologie-bicmos-55nm-haute-performance-et-faible-cout","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/theses-2022\/these-brezza-e-developpement-et-evaluation-dune-nouvelle-architecture-de-transistor-bipolaire-a-heterojonction-si-sige-pour-technologie-bicmos-55nm-haute-performance-et-faible-cout.html","title":{"rendered":"THESE BREZZA E. \u00ab\u00a0D\u00e9veloppement et Evaluation d\u2019une Nouvelle Architecture de Transistor Bipolaire \u00e0 H\u00e9t\u00e9rojonction Si\/SiGe pour Technologie BiCMOS 55nm haute-performance et faible-co\u00fbt \u00ab\u00a0"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_8gd20j6u02ns\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-56943'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-lfkzr5fl-7d90a60382c05b1029c83257cc877706\">\n#top .av-special-heading.av-lfkzr5fl-7d90a60382c05b1029c83257cc877706{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-lfkzr5fl-7d90a60382c05b1029c83257cc877706 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-lfkzr5fl-7d90a60382c05b1029c83257cc877706 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-lfkzr5fl-7d90a60382c05b1029c83257cc877706 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE BREZZA E. \u00ab\u00a0D\u00e9veloppement et Evaluation d\u2019une Nouvelle Architecture de Transistor Bipolaire \u00e0 H\u00e9t\u00e9rojonction Si\/SiGe pour Technologie BiCMOS 55nm haute-performance et faible-co\u00fbt \u00ab\u00a0<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>E. BREZZA<br \/>\n<\/strong><\/p>\n<p>Soutenance : 16 D\u00e9cembre 2022<strong><br \/>\n<\/strong>PhD thesis in Electronics, Microelectronics, Nanoelectronics and Microwaves, University of Lille, ENGSYS Engineering and Systems Sciences, 16 December 2022<br \/>\nProjet associ\u00e9 : Laboratoire commun STMicroelectronics-IEMN<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5>Summary:<\/h5>\n<p>Le d\u00e9veloppement de la technologie BiCMOS055X de STMicroelectronics, une technologie BiCMOS bas\u00e9 sur un noeud CMOS 55 nm compatible avec une ligne de production 300 mm, requiert le d\u00e9veloppement d\u2019une nouvelle architecture de Transistor Bipolaire \u00e0 H\u00e9t\u00e9rojonction (TBH). L\u2019architecture Epitaxial eXtrinsic Base Isolated from the Collector (EXBIC) a \u00e9t\u00e9 choisie en visant des valeurs de fT = 400 GHz et fMAX = 500 GHz avec une tension de claquage \u00e9metteur-collecteur BVCEo &gt;= 1.35 V pour cette technologie. Apr\u00e8s la r\u00e9alisation d\u2019un premier dispositif fonctionnel, un plan d\u2019am\u00e9lioration est d\u00e9fini. Les diff\u00e9rents aspects de la fabrication sont consid\u00e9r\u00e9s afin de r\u00e9duire la complexit\u00e9 du dispositif et am\u00e9liorer sa robustesse. La performance \u00e9lectrique est am\u00e9lior\u00e9e \u00e0 chaque introduction d\u2019une nouvelle modification. Des nouvelles int\u00e9grations de collecteur et base extrins\u00e8que sont propos\u00e9es, ainsi d\u00e9finissant une nouvelle version de TBH EXBIC. Sur l\u2019architecture EXBIC am\u00e9lior\u00e9e, un proc\u00e9d\u00e9 d\u2019optimisation a \u00e9t\u00e9 men\u00e9 afin de r\u00e9gler les param\u00e8tres de chaque partie du composant. Les \u00e9tudes ciblent l\u2019am\u00e9lioration des profils de dopage et la r\u00e9duction des r\u00e9sistances parasites. Les valeurs de fT = 380 GHz et fMAX 390 GHz avec BVCEo = 1.4 V atteintes sur le meilleur dispositif produit sont encore insuffisantes pour les exigences de la technologie BiCMOS055X. Des \u00e9tudes futures sont d\u00e9finies afin de pouvoir atteindre et d\u00e9passer les performances souhait\u00e9es.<\/p>\n<h5>Abstract:<\/h5>\n<p>The development of STMicroelectronics\u2019 BiCMOS055X technology, a BiCMOS technology based on a 55 nm CMOS node compatible with a 300 mm production line, requires the development of a new Bipolar Heterojunction Transistor (BHT) architecture. The Epitaxial eXtrinsic Base Isolated from the Collector (EXBIC) architecture has been chosen by targeting values of fT = 400 GHz and fMAX = 500 GHz with an emitter-collector breakdown voltage BVCEo &gt;= 1.35 V for this technology. After the realization of a first functional device, an improvement plan is defined. The different aspects of the fabrication are considered in order to reduce the complexity of the device and improve its robustness. The electrical performance is improved with each new modification. New integrations of collector and extrinsic base are proposed, defining a new version of TBH EXBIC. On the improved EXBIC architecture, an optimization process has been carried out to adjust the parameters of each part of the component. The studies target the improvement of doping profiles and the reduction of parasitic resistances. The values of fT = 380 GHz and fMAX 390 GHz with BVCEo = 1.4 V reached on the best device produced are still insufficient for the requirements of the BiCMOS055X technology. Future studies are defined in order to reach and exceed the desired performances.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[316],"tags":[],"class_list":["post-56943","post","type-post","status-publish","format-standard","hentry","category-theses-2022"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/56943","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=56943"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/56943\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=56943"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=56943"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=56943"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}