{"id":56920,"date":"2023-03-23T12:33:02","date_gmt":"2023-03-23T10:33:02","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=56920"},"modified":"2023-03-23T12:33:02","modified_gmt":"2023-03-23T10:33:02","slug":"these-chanuel-a-transistor-gan-sur-si-compatible-cmos-pour-lamplification-de-puissance-en-bande-ka-optimisation-de-lempilement-de-grille","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/theses-2022\/these-chanuel-a-transistor-gan-sur-si-compatible-cmos-pour-lamplification-de-puissance-en-bande-ka-optimisation-de-lempilement-de-grille.html","title":{"rendered":"THESE CHANUEL A. \u00ab\u00a0Transistor GaN sur Si compatible CMOS pour l&rsquo;amplification de puissance en bande Ka: optimisation de l&#8217;empilement de grille \u00ab\u00a0"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_16uftahz751ax\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-56920'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-lfkz42h4-83fcc630c22cb50daff0848fd600353e\">\n#top .av-special-heading.av-lfkz42h4-83fcc630c22cb50daff0848fd600353e{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-lfkz42h4-83fcc630c22cb50daff0848fd600353e .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-lfkz42h4-83fcc630c22cb50daff0848fd600353e .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-lfkz42h4-83fcc630c22cb50daff0848fd600353e av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE CHANUEL A. \u00ab\u00a0Transistor GaN sur Si compatible CMOS pour l\u2018amplification de puissance en bande Ka: optimisation de l\u2019empilement de grille \u00ab\u00a0<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>A. CHANUEL<br \/>\n<\/strong><\/p>\n<p>Le 13 d\u00e9cembre 2022<\/p>\n<p>Th\u00e8se de doctorat en Electronique, micro\u00e9lectronique, nano\u00e9lectronique et micro-ondes, Universit\u00e9 de Lille, ENGSYS Sciences de l\u2019ing\u00e9nierie et des syst\u00e8mes,<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5>Summary:<\/h5>\n<p>La brique de grille des transistors GaN n\u00e9cessite un dimensionnement plus compact avec une longueur plus courte (Lg~150 nm) et une barri\u00e8re plus fine (&lt;10 nm) pour le fonctionnement en bande Ka (~30 GHz). De plus, la compatibilit\u00e9 de fabrication avec les technologies CMOS implique de modifier les techniques de fabrications et les m\u00e9tallisations sans d\u00e9grader les performances. Apr\u00e8s avoir rappel\u00e9 les enjeux du d\u00e9veloppement des technologies GaN\/Si compatibles CMOS autour de 30 GHz, le proc\u00e9d\u00e9 de fabrication des premiers transistors GaN sur substrat silicium 200 mm pour les applications radiofr\u00e9quence d\u00e9velopp\u00e9 au CEA Leti est pr\u00e9sent\u00e9. L\u2019influence des proc\u00e9d\u00e9s de fabrications sur les performances \u00e9lectriques est ensuite \u00e9tudi\u00e9e en comparant plusieurs plaques d\u00e9montrant des r\u00e9sultats d\u2019amplification encourageants (PAE=40 % and Pout=2,4 W\/mm \u00e0 30 GHz). Une analyse des facteurs limitant le fonctionnement en fr\u00e9quence du transistor est ensuite men\u00e9e \u00e0 l\u2019aide de caract\u00e9risations petit-signal r\u00e9alis\u00e9es \u00e0 l\u2019IEMN. Finalement, des aspects pr\u00e9liminaires sur la fiabilit\u00e9 des composants sont abord\u00e9s en observant les variations des performances \u00e9lectriques apr\u00e8s des recuits successifs ainsi qu\u2019en extrayant la r\u00e9sistance thermique de deux empilements GaN\/Si.<\/p>\n<h5>Abstract:<\/h5>\n<p>The gate brick of GaN transistors requires a more compact design with a shorter length (Lg~150 nm) and a thinner barrier (&lt;10 nm) for Ka-band operation (~30 GHz). Moreover, manufacturing compatibility with CMOS technologies implies modifying manufacturing techniques and metallizations without degrading performance. After recalling the challenges of developing CMOS-compatible GaN\/Si technologies around 30 GHz, the fabrication process of the first GaN transistors on a 200 mm silicon substrate for radio frequency applications developed at CEA Leti is presented. The influence of the fabrication process on the electrical performance is then studied by comparing several wafers showing encouraging amplification results (PAE=40% and Pout=2.4 W\/mm at 30 GHz). An analysis of the factors limiting the frequency operation of the transistor is then conducted using small-signal characterizations performed at IEMN. Finally, preliminary aspects on the reliability of the components are addressed by observing the variations of the electrical performances after successive annealing and by extracting the thermal resistance of two GaN\/Si stacks.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[316],"tags":[],"class_list":["post-56920","post","type-post","status-publish","format-standard","hentry","category-theses-2022"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/56920","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=56920"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/56920\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=56920"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=56920"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=56920"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}