{"id":56851,"date":"2023-03-22T10:41:28","date_gmt":"2023-03-22T08:41:28","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=56851"},"modified":"2023-03-22T10:41:28","modified_gmt":"2023-03-22T08:41:28","slug":"these-victor-fiorese-nano-sonde-active-intelligente-pour-mesures-de-bruit-et-de-puissance-dans-la-bande-de-frequence-130-260-ghz","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/theses-2022\/these-victor-fiorese-nano-sonde-active-intelligente-pour-mesures-de-bruit-et-de-puissance-dans-la-bande-de-frequence-130-260-ghz.html","title":{"rendered":"THESE Victor FIORESE \u2013 \u00ab\u00a0Nano sonde active intelligente pour mesures de bruit et de puissance dans la bande de fr\u00e9quence 130-260 GHz\u00a0\u00bb"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_1flagtaczpxqs\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-56851'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-lfjfm024-a8ed051255c60246df1353e1ded802a9\">\n#top .av-special-heading.av-lfjfm024-a8ed051255c60246df1353e1ded802a9{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-lfjfm024-a8ed051255c60246df1353e1ded802a9 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-lfjfm024-a8ed051255c60246df1353e1ded802a9 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-lfjfm024-a8ed051255c60246df1353e1ded802a9 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE Victor FIORESE \u2013 \u00ab\u00a0Nano sonde active intelligente pour mesures de bruit et de puissance dans la bande de fr\u00e9quence 130-260 GHz\u00a0\u00bb<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>THESE Victor FIORESE<\/strong><\/p>\n<p>Soutenance : 8 semptembre 2022<strong><br \/>\n<\/strong>Laboratoire central \u2013 Villeneuve d\u2019Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<h5><\/h5>\n<p><span id=\"page10R_mcid28\" class=\"markedContent\"><\/span><span id=\"page10R_mcid29\" class=\"markedContent\"><span dir=\"ltr\" role=\"presentation\">Pr. Guillaume DUCOURNAU<\/span> <span dir=\"ltr\" role=\"presentation\">-<\/span> <span dir=\"ltr\" role=\"presentation\">IEMN Villeneuve d\u2019Ascq<\/span><\/span><span id=\"page10R_mcid30\" class=\"markedContent\"> <span dir=\"ltr\" role=\"presentation\">Pr\u00e9sident du jury<\/span><\/span><span id=\"undefined\" class=\"markedContent\"><\/span><span id=\"page10R_mcid31\" class=\"markedContent\"><br role=\"presentation\" \/><span dir=\"ltr\" role=\"presentation\">Pr. Nathalie DELTIMPLE<\/span> <span dir=\"ltr\" role=\"presentation\">-<\/span> <span dir=\"ltr\" role=\"presentation\">IMS Bordeaux<\/span><\/span><span id=\"page10R_mcid32\" class=\"markedContent\"> <span dir=\"ltr\" role=\"presentation\">Rapporteure<\/span><\/span><span id=\"undefined\" class=\"markedContent\"><\/span><span id=\"page10R_mcid33\" class=\"markedContent\"><br role=\"presentation\" \/><span dir=\"ltr\" role=\"presentation\">Pr. Pierre BLONDY<\/span> <span dir=\"ltr\" role=\"presentation\">-<\/span> <span dir=\"ltr\" role=\"presentation\">XLIM Limoges<\/span><\/span><span id=\"page10R_mcid34\" class=\"markedContent\"> <span dir=\"ltr\" role=\"presentation\">Rapporteur<\/span><\/span><span id=\"undefined\" class=\"markedContent\"><\/span><span id=\"page10R_mcid35\" class=\"markedContent\"><br role=\"presentation\" \/><span dir=\"ltr\" role=\"presentation\">Pr. Marina DENG<\/span> <span dir=\"ltr\" role=\"presentation\">-<\/span> <span dir=\"ltr\" role=\"presentation\">IMS Bordeaux<\/span><\/span><span id=\"page10R_mcid36\" class=\"markedContent\"> <span dir=\"ltr\" role=\"presentation\">Examinatrice<\/span><\/span><span id=\"undefined\" class=\"markedContent\"><\/span><span id=\"page10R_mcid37\" class=\"markedContent\"><br role=\"presentation\" \/><span dir=\"ltr\" role=\"presentation\">Pr. Dominique SCHREURS<\/span> <span dir=\"ltr\" role=\"presentation\">-<\/span> <span dir=\"ltr\" role=\"presentation\">Katholieke Universiteit Leuven<\/span><\/span><span id=\"page10R_mcid38\" class=\"markedContent\"> <span dir=\"ltr\" role=\"presentation\">Examinatrice<\/span><\/span><span id=\"undefined\" class=\"markedContent\"><\/span><span id=\"page10R_mcid39\" class=\"markedContent\"><br role=\"presentation\" \/><span dir=\"ltr\" role=\"presentation\">Mr. Daniel GLORIA<\/span> <span dir=\"ltr\" role=\"presentation\">-<\/span> <span dir=\"ltr\" role=\"presentation\">STMicroelectronics Croll<\/span><span dir=\"ltr\" role=\"presentation\">es<\/span><\/span><span id=\"page10R_mcid40\" class=\"markedContent\"> <span dir=\"ltr\" role=\"presentation\">Examinateur<\/span><\/span><span id=\"undefined\" class=\"markedContent\"><\/span><span id=\"page10R_mcid41\" class=\"markedContent\"><br role=\"presentation\" \/><span dir=\"ltr\" role=\"presentation\">Pr. Christophe GAQUIERE<\/span> <span dir=\"ltr\" role=\"presentation\">&#8211;<\/span> <span dir=\"ltr\" role=\"presentation\">IEMN Villeneuve d\u2019Ascq<\/span><\/span><span id=\"page10R_mcid42\" class=\"markedContent\"> <span dir=\"ltr\" role=\"presentation\">Co<\/span><span dir=\"ltr\" role=\"presentation\">&#8211;<\/span><span dir=\"ltr\" role=\"presentation\">directeur de th\u00e8se<\/span><\/span><span id=\"undefined\" class=\"markedContent\"><\/span><span id=\"page10R_mcid43\" class=\"markedContent\"><br role=\"presentation\" \/><span dir=\"ltr\" role=\"presentation\">Pr. Emmanuel DUBOIS<\/span> <span dir=\"ltr\" role=\"presentation\">&#8211;<\/span> <span dir=\"ltr\" role=\"presentation\">IEMN Villeneuve d\u2019Ascq<\/span><\/span><span id=\"page10R_mcid44\" class=\"markedContent\"> <span dir=\"ltr\" role=\"presentation\">Directeur de th\u00e8se<\/span><\/span><span id=\"undefined\" class=\"markedContent\"><\/span><span id=\"page10R_mcid45\" class=\"markedContent\"><br role=\"presentation\" \/><span dir=\"ltr\" role=\"presentation\">Dr. Simon BOUVOT<\/span> <span dir=\"ltr\" role=\"presentation\">-<\/span> <span dir=\"ltr\" role=\"presentation\">STMicroelectronics Crolles<\/span><\/span><span id=\"page10R_mcid46\" class=\"markedContent\"> <span dir=\"ltr\" role=\"presentation\">Invit\u00e9<\/span><\/span><span id=\"undefined\" class=\"markedContent\"><\/span><span id=\"page10R_mcid47\" class=\"markedContent\"><br role=\"presentation\" \/><span dir=\"ltr\" role=\"presentation\">Dr. Joao Carlos<\/span> <span dir=\"ltr\" role=\"presentation\">AZEVEDO GONCALVES<\/span> <span dir=\"ltr\" role=\"presentation\">-<\/span> <span dir=\"ltr\" role=\"presentation\">STMicroelectronics Crolles<\/span><\/span><span id=\"page10R_mcid48\" class=\"markedContent\"> <span dir=\"ltr\" role=\"presentation\">Invit<\/span><\/span><\/p>\n<h5>Summary:<\/h5>\n<p>Les technologies avanc\u00e9es sur silicium visant des Ft\/Fmax sup\u00e9rieures \u00e0 400 GHz permettent la conception de circuits sur silicium dans la plage de fr\u00e9quence 130-260 GHz. Afin de pousser le d\u00e9veloppement de ces technologies et l\u2019extraction des facteurs de m\u00e9rite des transistors tels que le facteur de bruit, l\u2019efficacit\u00e9 en puissance et leur mod\u00e9lisation, il est n\u00e9cessaire de disposer de moyens de caract\u00e9risation hyperfr\u00e9quences associ\u00e9s. \u00c0 ces fr\u00e9quences, les outils large bande tels que les sources de bruit, les r\u00e9cepteurs de bruit, les adaptateurs d\u2019imp\u00e9dances et les sondes de puissance ne sont pour l\u2019instant pas disponibles pour faire ces \u00e9tudes \u00e0 une \u00e9chelle industrielle. Plusieurs th\u00e8ses ont prouv\u00e9 la possibilit\u00e9 de placer ces fonctions de caract\u00e9risation au plus proche du composant en technologie BiCMOS 55 nm de STMicroelectronics \u00e0 tester, directement sur Silicium. Cette approche in situ montre certaines limitations notamment en termes de surface de Silicium allou\u00e9e aux seuls circuits de tests et \u00e0 la r\u00e9p\u00e9tabilit\u00e9 des mesures pour diff\u00e9rents composants. Une industrialisation des mesures est vis\u00e9e dans le cadre de cette th\u00e8se, poussant l\u2019int\u00e9gration des fonctions circuits associ\u00e9es \u00e0 la caract\u00e9risation dans des boitiers de type split blocks.Pour mener ces travaux, 3 axes d\u2019\u00e9tudes ont \u00e9t\u00e9 d\u00e9velopp\u00e9s visant la r\u00e9alisation d\u2019un bo\u00eetier fonctionnalis\u00e9 en source de bruit bande G : la conception de circuits silicium en bande G utilis\u00e9s dans la fonctionnalisation de ce bo\u00eeter, la conception de substrats organiques accueillant par assemblage flip chip les circuits silicium, enfin la conception des split blocks int\u00e9grant ces substrats.Au sujet des boitiers, les principales transitions mises en jeu ont pu \u00eatre caract\u00e9ris\u00e9es \u00e0 l\u2019aide de prototypes en configuration back-to-back. La transition de type E-plane entre la ligne strip-line suspendue du substrat et la cavit\u00e9 WR5 a pu \u00eatre caract\u00e9ris\u00e9e en bande G, mettant en \u00e9vidence un niveau de pertes d\u2019insertion moyen de 2,5 dB dans cette plage de fr\u00e9quence. De nouveaux essais d\u2019impression 3D m\u00e9tallique utilisant le proc\u00e9d\u00e9 MLS ont \u00e9galement \u00e9t\u00e9 r\u00e9alis\u00e9 au-del\u00e0 de 110 GHz pour l\u2019usinage d\u2019un guide d\u2019ondes WR5. Les pertes d\u2019insertion mesur\u00e9es en bande G sont de l\u2019ordre de 90 dB\/m contre 20 dB\/m pour des guides WR5 commerciaux. Cependant, un d\u00e9p\u00f4t de cuivre par \u00e9lectrolyse sur les faces internes de la cavit\u00e9 est rendu possible apr\u00e8s usinage et permet de rivaliser avec les guides d\u2019ondes du commerce avec des niveaux de pertes d\u2019insertion simul\u00e9es de 15 dB\/m. Cette int\u00e9gration en boitier repose sur un assemblage de type flip chip des diff\u00e9rents circuits en technologie SiGe BiCMOS 55 nm (Source de bruit, LNA, adaptation d\u2019imp\u00e9dance) sur un substrat organique multicouches ins\u00e9r\u00e9 dans des cavit\u00e9s r\u00e9alis\u00e9es par micro-usinage. Une source de bruit active a \u00e9t\u00e9 r\u00e9alis\u00e9e et mesur\u00e9e en bruit et en param\u00e8tres S en bande G, mettant en \u00e9vidence des niveaux d\u2019ENR disponibles s\u2019\u00e9chelonnant entre 0 et 37 dB. Cette source de bruit en technologie SiGe BiCMOS 55 nm pr\u00e9sente l\u2019avantage de la facilit\u00e9 d\u2019int\u00e9gration en boitier et une adaptation d\u2019imp\u00e9dance de sortie meilleure que -8 dB dans la bande de fr\u00e9quence consid\u00e9r\u00e9e, quel que soit le courant de polarisation de la diode.Finalement, des essais d\u2019assemblages de source de bruit SiGe BiCMOS 55 nm \u00e0 large gamme d\u2019ENR ont \u00e9t\u00e9 men\u00e9s. Plusieurs prototypes de boitier ont \u00e9t\u00e9 r\u00e9alis\u00e9s ainsi que les substrats d\u2019accueil des fonctions circuits associ\u00e9es. Une connectique de type bride WR5 permet de relier le boitier \u00e0 des pointes de mesures commerciales de type Infinity Waveguide Probe et cela permet d\u2019envisager la mesure des param\u00e8tres de bruit d\u2019un transistor HBT et du facteur de bruit d\u2019un LNA sous pointes. Il devient alors possible d\u2019envisager ce type de mesure \u00e0 l\u2019\u00e9chelle industrielle pour de nombreuses technologies de circuits en bande G avec ces d\u00e9veloppements propos\u00e9s de bo\u00eetier fonctionnalis\u00e9 en source de bruit.<\/p>\n<h5>Abstract:<\/h5>\n<div class=\"abstract col-lg-7\">\n<div class=\"abstract-content en active\" lang=\"en\">Cutting-edge Silicon technologies targeting Ft\/Fmax above 400 GHz allow circuit design in the 130-260 GHz frequency range. To enhance development of bipolar transistors in such technologies, figure of merit extraction such as noise figure, power efficiency and associated modelling require high frequency characterization tools. At hyper frequencies, wide-band circuits such as noise sources, noise receivers, impedance tuners are not industrially speaking available yet. Several thesis demonstrated the ability to place these characterization means on-wafer, close to the STMicroelectronics SiGe BiCMOS 55 nm DUT. This in situ approach shows limitations in terms of Silicon surface consumption due to design of dedicated test circuits and measurement repeatability for diverse components. This thesis aims at industrializing such measurements by packaging associated circuits functionalities in split blocks.In order to develop this approach, 3 fields have been covered to elaborate a packaged noise source in G band: design of silicon functions, design of organic substrates for flip chip circuits report and design of split blocks integrating these substrates.The key transitions at play in the packages have been characterized in back-to-back configuration in G band, such as an E-plane transition between suspended strip line and WR5 cavity. This transition has demonstrated an average insertion loss level of 2.5 dB in G band, placing it among the most promising demonstrators of millimeter-wave packaging. Moreover, low-cost considerations have to be underlined, since this package leverages low-cost materials, contrarily to traditional III-V based on quartz substrates. New trials of metallic 3D-printing using MLS process have been led above 110 GHz for WR5 waveguide machining. Measured insertion loss in G band are around 90 dB\/m against 20 dB\/m for commercial waveguides. However, a post-process copper plating by electrolysis can be performed, reducing insertion losses to a simulated 15 dB\/m.The package integration relies on flip chip assembly technique of several SiGe BiCMOS 55 nm (noise source, LNA, impedance matching) on a multi-layer organic substrate inserted in micromachined cavities. First, circuits have been characterized on wafer in G band in S parameters and noise. An amplified noise source made of a Schottky diode polarized in avalanche regime in series with a LNA has been designed and characterized in noise and S parameters in G band, demonstrating available ENR levels from 0 dB to 37 dB. This noise source is compatible with silicon packaging integration and offers an output matching better than -8 dB whatever the diode biasing current value and frequency considered. Besides, multi-impedance noise characterization approach has been sustained based on pre-matched bipolar transistors. 16 structures of matching networks allow the extraction of 4 noise parameters of a SiGe BiCMOS 55 nm bipolar transistor using Lane\u2019s algorithm.Finally, assembly trials of developed noise source have been led. Several package prototypes and substrates were machined for the corresponding circuits functions. A WR5 flange permits the connection of this package to commercially available probes such as Infinity Waveguide Probe. This paves the way to noise figure and noise parameters extraction of a DUT for various circuit technologies in G band following an industrial approach.<\/div>\n<\/div>\n<div class=\"col-lg-5\">\n<div class=\"keywords\">\n<div><\/div>\n<\/div>\n<\/div>\n<div class=\"row\">\n<div class=\"col-lg-5\"><\/div>\n<\/div>\n<div class=\"viewer panel-doc d-none d-sm-block\"><\/div>\n<div class=\"row\">\n<div class=\"col-md-2\">\n<div id=\"list-thumbnail-viewer\"><\/div>\n<\/div>\n<\/div>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[316],"tags":[],"class_list":["post-56851","post","type-post","status-publish","format-standard","hentry","category-theses-2022"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/56851","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=56851"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/56851\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=56851"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=56851"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=56851"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}