{"id":55693,"date":"2022-12-09T17:49:33","date_gmt":"2022-12-09T15:49:33","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=55693"},"modified":"2022-12-09T17:51:03","modified_gmt":"2022-12-09T15:51:03","slug":"these-quentin-fornasiero-fabrication-et-caracterisation-de-diodes-et-de-transistors-hemt-a-base-de-gan-pour-la-conversion-de-tension-dc-dc-en-electronique-de-puissance","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/agenda\/these-quentin-fornasiero-fabrication-et-caracterisation-de-diodes-et-de-transistors-hemt-a-base-de-gan-pour-la-conversion-de-tension-dc-dc-en-electronique-de-puissance.html","title":{"rendered":"THESE : Quentin Fornasiero \u2013 \u00ab\u00a0Fabrication et caract\u00e9risation de diodes et de transistors HEMT \u00e0 base de GaN pour la conversion de tension DC-DC en \u00e9lectronique de puissance\u00a0\u00bb"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading 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https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-55693'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-lbgolgvo-e47fe8005f847ed21082d7a5e4833898\">\n#top .av-special-heading.av-lbgolgvo-e47fe8005f847ed21082d7a5e4833898{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-lbgolgvo-e47fe8005f847ed21082d7a5e4833898 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-lbgolgvo-e47fe8005f847ed21082d7a5e4833898 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-lbgolgvo-e47fe8005f847ed21082d7a5e4833898 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : Quentin Fornasiero \u2013 \u00ab\u00a0Fabrication et caract\u00e9risation de diodes et de transistors HEMT \u00e0 base de GaN pour la conversion de tension DC-DC en \u00e9lectronique de puissance\u00a0\u00bb<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>Quentin Fornasiero<\/strong><\/p>\n<p>Soutenance : <strong>14 D\u00e9cembre 2022 \u00e0 10H<br \/>\n<\/strong>IRCICA \u2013 Villeneuve d\u2019Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<ul>\n<li>Nathalie Malbert (rapporteure), IMS \u2013 Professeur de l\u2019Universit\u00e9 de Bordeaux<\/li>\n<li>Jean-Christophe Nallatamby (rapporteur), XLIM \u2013 Professeur de l\u2019Universit\u00e9 de Limoges<\/li>\n<li>Dominique Planson (examinateur), INSA Lyon, AMPERE- Professeur<\/li>\n<li>Erwan Morvan (invit\u00e9), Ing\u00e9nieur au CEA-LETI \u2013 Grenoble<\/li>\n<li>Jean-Claude De Jaeger (directeur de th\u00e8se), IEMN \u2013 Professeur \u00e9m\u00e9rite \u00e0 l\u2019Universit\u00e9 de Lille<\/li>\n<li>Nadir Idir (co-directeur de th\u00e8se), L2EP \u2013 professeur \u00e0 l\u2019Universit\u00e9 de Lille<\/li>\n<li>Nicolas Defrance (encadrant), IEMN \u2013 Maitre de conf\u00e9rence \u00e0 l\u2019Universit\u00e9 de Lille<\/li>\n<\/ul>\n<h5>Summary:<\/h5>\n<p>Ce travail de th\u00e8se s\u2019inscrit dans une probl\u00e9matique constante d\u2019int\u00e9grabilit\u00e9 des syst\u00e8mes \u00e9lectroniques \u00e0 fortes densit\u00e9s de puissance et \u00e0 haut rendement pour l\u2019\u00e9lectronique de puissance dans les secteurs civil, industriel et militaire: transports individuels et urbains, a\u00e9ronautique et spatiale, high-tech. En cela, le Nitrure de Gallium (GaN) est un mat\u00e9riau couvrant une large \u00e9tendue d\u2019applications. C\u2019est un candidat id\u00e9al pour le remplacement de la fili\u00e8re Silicium dont les limites sont aujourd\u2019hui atteintes. Sa robustesse en milieu hostile \u2013 face \u00e0 des temp\u00e9ratures extr\u00eames de plus de 200 \u00b0C, ou sous fort niveau de radiation \u2013 et ses propri\u00e9t\u00e9s de conduction \u00e9lectrique et thermique exceptionnelles en font un mat\u00e9riau de premier choix pour une nouvelle g\u00e9n\u00e9ration de composants pour l\u2019\u00e9lectronique de puissance. Aujourd\u2019hui, le principal verrou technologique s\u2019opposant \u00e0 son essor sur le march\u00e9 est induit par des m\u00e9canismes complexes de pi\u00e9geages des porteurs de charges \u00e9lectriques, limitant les performances en commutation \u00e0 haute tension. Ainsi, les objectifs de cette th\u00e8se consistent en la r\u00e9alisation conjointe de diodes et de transistors HEMT de puissance sur h\u00e9t\u00e9rojonction AlGaN\/GaN, plus sp\u00e9cifiquement adapt\u00e9s aux syst\u00e8mes de conversion de tensions DC-DC. Le d\u00e9veloppement d\u2019un proc\u00e9d\u00e9 de fabrication de technologies normally-off est au c\u0153ur de ce travail, notamment les proc\u00e9d\u00e9s de traitement de surface AlGaN par plasma SF<sub>6<\/sub> et de d\u00e9p\u00f4t d\u2019oxyde pour la r\u00e9alisation de grille MOS. Enfin, la caract\u00e9risation \u00e9lectrique et physique des composants et des h\u00e9t\u00e9rostructures \u00e0 base de GaN apporte des informations essentielles \u00e0 la compr\u00e9hension des m\u00e9canismes de transport des charges \u00e9lectriques en vue de l\u2019optimisation des proc\u00e9d\u00e9s de d\u00e9veloppement technologique d\u00e9di\u00e9s \u00e0 l\u2019\u00e9lectronique de puissance.<\/p>\n<h5>Abstract:<\/h5>\n<p>This thesis work fits into a constant need of integrability of high power and high efficiency systems dedicated to power electronic, in civil, industrial and military fields: individual and urban transports, aeronautics and space, high-tech\u2026 In this frame, Gallium Nitride-based (GaN) material covers a wide application range, and is set as an ideal candidate in order to replace the silicon industry, which reached its theorical limits. This material ruggedness in hostile environments \u2013 high temperature over 200\u00b0C, or high level radiative environment \u2013 and its great electrical and thermal conductivity set GaN in a leading place for the emerging of novel power electronic devices.<span style=\"mso-spacerun: yes;\">\u00a0 <\/span>Nowadays, the main technological lock regarding GaN systems industrial expansion is induced by hard charge-trapping mechanisms limiting switching performance at high voltage. Thus, the objectives of this thesis work consist in the simultaneous fabrication of GaN-based diodes and HEMT transistors on AlGaN\/GaN heterojunction, specifically dedicated to DC-DC voltage conversion for supply systems. The main topic of this work is to elaborate the development process steps of normally-off devices, especially the SF<sub>6<\/sub> plasma for AlGaN surface treatment and oxide deposition for MOS-gated HEMT process. Then, electrical and physical characterization of GaN-based devices and heterostructures bring an enhanced feedback for comprehensive carrier transport mechanisms, and thus, technological optimization for power electronic devices.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":55633,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[65,87,84,316],"tags":[],"class_list":["post-55693","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-agenda","category-agenda-en","category-agenda-en-en","category-theses-2022"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/55693","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=55693"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/55693\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/55633"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=55693"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=55693"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=55693"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}