{"id":55571,"date":"2022-12-01T16:52:01","date_gmt":"2022-12-01T14:52:01","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=55571"},"modified":"2022-12-01T16:52:22","modified_gmt":"2022-12-01T14:52:22","slug":"these-g-di-gioia-diode-schottky-gan-pour-la-generation-thz","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/these\/these-2021\/these-g-di-gioia-diode-schottky-gan-pour-la-generation-thz.html","title":{"rendered":"THESE : G. DI GIOIA \u2013 Diode Schottky GaN pour la g\u00e9n\u00e9ration THz"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_1ort1z89d14ls\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-55571'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-lb572g9f-5cb38ae54faa90136b4242f6b2ec6a28\">\n#top .av-special-heading.av-lb572g9f-5cb38ae54faa90136b4242f6b2ec6a28{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-lb572g9f-5cb38ae54faa90136b4242f6b2ec6a28 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-lb572g9f-5cb38ae54faa90136b4242f6b2ec6a28 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-lb572g9f-5cb38ae54faa90136b4242f6b2ec6a28 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : G. DI GIOIA \u2013 Diode Schottky GaN pour la g\u00e9n\u00e9ration THz <\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>DI GIOIA G.<br \/>\n<\/strong><\/p>\n<p>Soutenance : <strong>13 d\u00e9cembre 2021<br \/>\n<\/strong>Th\u00e8se de doctorat en Electronique, micro\u00e9lectronique, nano\u00e9lectronique et micro-ondes, Universit\u00e9 de Lille, ENGSYS Sciences de l\u2019ing\u00e9nierie et des syst\u00e8mes,<br \/>\nAssociated project: RENATECH<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5>Summary:<\/h5>\n<p>La science t\u00e9rahertz a de nombreux domaines d\u2019applications, tels que l\u2019astronomie, la s\u00e9curit\u00e9, l\u2019analyse biom\u00e9dicale et les t\u00e9l\u00e9communications sans fil. Cependant, l\u2019application de la technologie THz a \u00e9t\u00e9 entrav\u00e9e par le manque de sources t\u00e9rahertz adapt\u00e9es, fiables, compactes et rentables. Bien qu\u2019il existe de nombreuses fa\u00e7ons de g\u00e9n\u00e9rer un signal aux fr\u00e9quences THz, bon nombre de ces sources souffrent de plusieurs inconv\u00e9nients et limitations, tels qu\u2019une puissance de sortie limit\u00e9e, le besoin de temp\u00e9ratures cryog\u00e9niques pour fonctionner, une taille excessive, une complexit\u00e9 et un co\u00fbt prohibitif. Parmi les sources THz actuelles, un type de technologie \u00e0 semi-conducteurs se distingue : le multiplicateur de fr\u00e9quence. L\u2019\u00e9tat de l\u2019art actuel de la technologie des multiplicateurs de fr\u00e9quence est d\u00e9tenu par les multiplicateurs de fr\u00e9quence \u00e0 diodes GaAs Schottky. Il s\u2019agit d\u2019une technologie bien connue, qui a \u00e9t\u00e9 utilis\u00e9e avec succ\u00e8s, mais comme les exigences de fr\u00e9quence de sortie deviennent de plus en plus \u00e9lev\u00e9es, elle est face, \u00e0 pr\u00e9sent, \u00e0 un goulot d\u2019\u00e9tranglement d\u00fb aux limitations physiques intrins\u00e8ques du GaAs en termes de tension de claquage et de conductivit\u00e9 thermique, qui affectent la puissance de sortie du multiplicateur de fr\u00e9quence. Le GaN, gr\u00e2ce \u00e0 son champ de claquage plus \u00e9lev\u00e9 et \u00e0 sa conductivit\u00e9 thermique plus \u00e9lev\u00e9e, peut en th\u00e9orie offrir des capacit\u00e9s de tenu \u00e0 la puissance de pompe plus \u00e9lev\u00e9es pour les multiplicateurs de fr\u00e9quence par rapport au GaAs. Ces capacit\u00e9s peuvent conduire \u00e0 des conceptions simplifi\u00e9es de multiplicateurs de fr\u00e9quence, par rapport \u00e0 l\u2019\u00e9tat de l\u2019art des multiplicateurs de fr\u00e9quence GaAs. En th\u00e9orie, huit diodes GaAs sont n\u00e9cessaires pour un doubleur de 200 GHz avec une puissance d\u2019entr\u00e9e de 150 mW, tandis qu\u2019une diode GaN avec une surface d\u2019anode similaire est capable de g\u00e9rer cette puissance de pompe en entr\u00e9e. Dans cette th\u00e8se, des diodes GaN Schottky quasi-verticales sont fabriqu\u00e9es et caract\u00e9ris\u00e9es, afin d\u2019\u00e9tudier leurs param\u00e8tres et performances pour des applications de multiplication de fr\u00e9quence. Le proc\u00e9d\u00e9 de fabrication est r\u00e9alis\u00e9 sur trois types diff\u00e9rents d\u2019\u00e9pitaxie GaN : GaN sur saphir, GaN sur Si et GaN sur SiC. Les diodes sont fabriqu\u00e9es avec une structure en pont d\u2019air pour r\u00e9duire les composants parasites \u00e0 haute fr\u00e9quence.<\/p>\n<h5>Abstract:<\/h5>\n<p>Terahertz science has many application areas, such as astronomy, security, biomedical analysis, and wireless telecommunications. However, the application of THz technology has been hampered by the lack of suitable, reliable, compact and cost-effective terahertz sources. Although there are many ways to generate a signal at THz frequencies, many of these sources suffer from several drawbacks and limitations, such as limited output power, the need for cryogenic temperatures to operate, excessive size, complexity and prohibitive cost. Among current THz sources, one type of solid-state technology stands out: the frequency multiplier. The current state of the art in frequency multiplier technology is held by GaAs Schottky diode frequency multipliers. This is a well known technology that has been used successfully, but as the output frequency requirements become higher and higher, it is now facing a bottleneck due to the intrinsic physical limitations of GaAs in terms of breakdown voltage and thermal conductivity, which affect the output power of the frequency multiplier. GaN, due to its higher breakdown field and higher thermal conductivity, can theoretically offer higher pump power holding capabilities for frequency multipliers compared to GaAs. These capabilities can lead to simplified frequency multiplier designs compared to the state of the art GaAs frequency multipliers. Theoretically, eight GaAs diodes are required for a 200 GHz doubler with an input power of 150 mW, while a GaN diode with similar anode area is capable of handling this input pump power. In this thesis, quasi-vertical GaN Schottky diodes are fabricated and characterized, in order to study their parameters and performance for frequency multiplication applications. The fabrication process is performed on three different types of GaN epitaxy: GaN on sapphire, GaN on Si and GaN on SiC. The diodes are fabricated with an air-bridge structure to reduce high frequency spurious components.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[317],"tags":[],"class_list":["post-55571","post","type-post","status-publish","format-standard","hentry","category-these-2021"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/55571","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=55571"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/55571\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=55571"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=55571"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=55571"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}