{"id":55314,"date":"2023-02-03T15:30:04","date_gmt":"2023-02-03T13:30:04","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=55314"},"modified":"2023-02-03T15:31:51","modified_gmt":"2023-02-03T13:31:51","slug":"these-katia-harrouche-conception-et-realisation-de-transistors-a-effet-de-champ-a-base-de-nitrure-de-gallium-pour-amplification-de-puissance-jusquen-bande-w","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/these\/these-2021\/these-katia-harrouche-conception-et-realisation-de-transistors-a-effet-de-champ-a-base-de-nitrure-de-gallium-pour-amplification-de-puissance-jusquen-bande-w.html","title":{"rendered":"THESE : Katia HARROUCHE \u2013 Conception et r\u00e9alisation de transistors \u00e0 effet de champ \u00e0 base de Nitrure de Gallium pour amplification de puissance jusqu\u2019en bande W"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap 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sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-55314'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-ldokdeh3-9ff9db761b33d1cfda291182978deaf0\">\n#top .av-special-heading.av-ldokdeh3-9ff9db761b33d1cfda291182978deaf0{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-ldokdeh3-9ff9db761b33d1cfda291182978deaf0 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-ldokdeh3-9ff9db761b33d1cfda291182978deaf0 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-ldokdeh3-9ff9db761b33d1cfda291182978deaf0 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : Katia HARROUCHE \u2013 Conception et r\u00e9alisation de transistors \u00e0 effet de champ \u00e0 base de Nitrure de Gallium pour amplification de puissance jusqu\u2019en bande W <\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>Katia HARROUCHE<br \/>\n<\/strong><\/p>\n<p>Soutenance : 16 D\u00e9cembre 2021<\/p>\n<p>Th\u00e8se de doctorat en Electronique, micro\u00e9lectronique, nano\u00e9lectronique et micro-ondes, Universit\u00e9 de Lille, ENGSYS Sciences de l\u2019ing\u00e9nierie et des syst\u00e8mes,<br \/>\nAssociated project: RENATECH<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5>Summary:<\/h5>\n<p>Au cours des derni\u00e8res d\u00e9cennies, des progr\u00e8s remarquables ont \u00e9t\u00e9 r\u00e9alis\u00e9s sur les transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique \u00e0 base de GaN (HEMTs GaN) destin\u00e9s aux applications d\u2019amplification et de commutation de puissance \u00e0 haute fr\u00e9quence. Actuellement, les HEMTs GaN les plus matures sont bas\u00e9s sur des h\u00e9t\u00e9rostructures AlGaN\/GaN. Plus r\u00e9cemment, les h\u00e9t\u00e9rostructures \u00e0 barri\u00e8res ultrafines (&lt;10 nm) (In)(Ga)AlN\/GaN riches en Al ont \u00e9galement pr\u00e9sent\u00e9es beaucoup d\u2019int\u00e9r\u00eat pour les applications en gamme d\u2019ondes millim\u00e9triques. En effet, contrairement aux structures AlGaN\/GaN, les barri\u00e8res ultrafines riches en Al peuvent fournir une densit\u00e9 d\u2019\u00e9lectrons (2DEG) deux fois plus \u00e9lev\u00e9e tout en offrant un rapport d\u2019aspect important (longueur de grille \/ distance grille-canal) y compris avec des grilles tr\u00e8s courtes inferieures \u00e0 100 nm. Par cons\u00e9quent, les HEMTs GaN \u00e0 barri\u00e8re ultrafine riche en Al permettent de fonctionner \u00e0 une fr\u00e9quence plus \u00e9lev\u00e9e de mani\u00e8re robuste. Dans ce contexte, plusieurs groupes de recherche ont d\u00e9montr\u00e9 une combinaison unique de puissance plus \u00e9lev\u00e9e et une bande passante plus large jusqu\u2019\u00e0 100 GHz par l\u2019utilisation de transistors GaN par rapport aux autres technologies (GaAs ou silicium). Cependant, la plupart des applications n\u00e9cessitent des amplificateurs de puissance \u00e0 tr\u00e8s haut rendement associ\u00e9 \u00e0 une fiabilit\u00e9 \u00e9prouv\u00e9e et une lin\u00e9arit\u00e9 accrue. L\u2019\u00e9tat de l\u2019art des HEMTs GaN est limit\u00e9 aujourd\u2019hui \u00e0 environ 50% de rendement PAE (Power Added Efficiency) et peu de travaux report\u00e9s sur la fiabilit\u00e9 des composants GaN utilisant des grilles courtes inferieures \u00e0 150 nm. N\u00e9anmoins, l\u2019une des limitations majeures des composants RF modernes est la dissipation thermique. En effet, la puissance dissip\u00e9e s\u2019am\u00e9liore de 80% lorsque le rendement PAE passe de 50% \u00e0 80%. L\u2019objectif de ce travail est de fournir une technologie de pointe dans ce domaine avec le d\u00e9veloppement et l\u2019optimisation de transistors GaN \u00e0 grille sub-150 nm pour les applications en gamme d\u2019ondes millim\u00e9triques. En particulier, nous avons effectu\u00e9 une optimisation des couches tampons (buffer) tout en optimisant une barri\u00e8re AlN ultrafine inf\u00e9rieure \u00e0 5 nm afin d\u2019augmenter le gain de puissance, d\u2019am\u00e9liorer le confinement des \u00e9lectrons sous fort champ \u00e9lectrique et de simultan\u00e9ment r\u00e9duire les effets de pi\u00e8ges. De plus, le d\u00e9veloppement d\u2019un banc de mesures de puissance \u00e0 94 GHz a permis de d\u00e9montrer une densit\u00e9 de puissance \u00e0 l\u2019\u00e9tat de l\u2019art en bande W avec les composants fabriqu\u00e9s. Ces travaux constituent une base de travail prometteuse pour garantir des performances \u00e9lev\u00e9es (notamment le rendement PAE) et fiables des HEMTs GaN pour l\u2019amplification de puissance en gamme d\u2019ondes millim\u00e9triques li\u00e9e aux futures applications de t\u00e9l\u00e9communication 5G, spatiales ou militaires.<\/p>\n<h5>Abstract:<\/h5>\n<p>Over the last decades, remarkable progress has been made on GaN-based high electron mobility transistors (GaN HEMTs) for high frequency power amplification and switching applications. Currently, the most mature GaN HEMTs are based on AlGaN\/GaN heterostructures. More recently, Al-rich (In)(Ga)AlN\/GaN ultra-thin barrier heterostructures (&lt;10 nm) have also shown great interest for millimeter-wave applications. Indeed, unlike AlGaN\/GaN structures, Al-rich ultrathin barriers can provide twice the electron density (2DEG) while offering a large aspect ratio (gate length\/gate-channel distance) even with very short gates below 100 nm. Therefore, Al-rich GaN ultra-thin barrier HEMTs allow to operate at higher frequency in a robust manner. In this context, several research groups have demonstrated a unique combination of higher power and wider bandwidth up to 100 GHz by using GaN transistors compared to other technologies (GaAs or silicon). However, most applications require power amplifiers with very high efficiency combined with proven reliability and increased linearity. The state of the art of GaN HEMTs is limited today to about 50% PAE (Power Added Efficiency) and little work has been reported on the reliability of GaN devices using short gates smaller than 150 nm. Nevertheless, one of the major limitations of modern RF devices is the thermal dissipation. Indeed, the power dissipation improves by 80% when the PAE efficiency increases from 50% to 80%. The objective of this work is to provide a state-of-the-art technology in this field with the development and optimization of sub-150 nm GaN gate transistors for millimeter-wave range applications. In particular, we have optimized the buffer layers while optimizing a sub-5 nm AlN barrier in order to increase the power gain, improve the electron confinement under high electric field and simultaneously reduce the trapping effects. In addition, the development of a power measurement bench at 94 GHz has allowed to demonstrate a state-of-the-art power density at W-band with the fabricated components. This work provides a promising basis for ensuring high (including PAE efficiency) and reliable performance of GaN HEMTs for power amplification in the millimeter-wave range related to future 5G telecommunication, space or military applications.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[317],"tags":[],"class_list":["post-55314","post","type-post","status-publish","format-standard","hentry","category-these-2021"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/55314","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=55314"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/55314\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=55314"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=55314"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=55314"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}