{"id":55311,"date":"2023-02-03T15:27:26","date_gmt":"2023-02-03T13:27:26","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=55311"},"modified":"2023-02-03T15:29:24","modified_gmt":"2023-02-03T13:29:24","slug":"these-abid-i-nouveaux-transistors-electroniques-a-base-du-materiau-aln-pour-les-futures-applications-de-puissance","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/these\/these-2021\/these-abid-i-nouveaux-transistors-electroniques-a-base-du-materiau-aln-pour-les-futures-applications-de-puissance.html","title":{"rendered":"THESE : ABID I. &#8211; Nouveaux transistors \u00e9lectroniques \u00e0 base du mat\u00e9riau AlN pour les futures applications de puissance"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_1bl4d1upwhvjp\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-55311'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_heading-208a4514cd7e89029d0fc0a5ad179714\">\n#top .av-special-heading.av-av_heading-208a4514cd7e89029d0fc0a5ad179714{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-av_heading-208a4514cd7e89029d0fc0a5ad179714 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-av_heading-208a4514cd7e89029d0fc0a5ad179714 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-av_heading-208a4514cd7e89029d0fc0a5ad179714 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : ABID I. &#8211; Nouveaux transistors \u00e9lectroniques \u00e0 base du mat\u00e9riau AlN pour les futures applications de puissance <\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>ABID Idriss<\/strong><\/p>\n<p>Soutenance : <strong>12 Juillet 2021<\/strong><\/p>\n<p>Th\u00e8se de doctorat en Electronique, micro\u00e9lectronique, nano\u00e9lectronique et micro-ondes, Universit\u00e9 de Lille,<br \/>\nAssociated project: RENATECH<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5>Summary:<\/h5>\n<p>Les semiconducteurs \u00e0 large bande interdite tels que le GaN et SiC sont des mat\u00e9riaux de choix pour les applications de forte puissance. En effet, les propri\u00e9t\u00e9s du mat\u00e9riau GaN, notamment la haute densit\u00e9 et mobilit\u00e9 des \u00e9lectrons du gaz bidimensionnel des h\u00e9t\u00e9rostructures associ\u00e9es permettent de r\u00e9aliser un excellent compromis entre la r\u00e9sistance \u00e0 l\u2019\u00e9tat passant (Ron) et la tension de claquage. De plus, les r\u00e9cents progr\u00e8s en mati\u00e8re de croissance de GaN sur substrat silicium (111) laissent esp\u00e9rer l\u2019int\u00e9gration future de composants de forte puissance \u00e0 bas co\u00fbt avec des technologies matures de type CMOS. Afin de repousser davantage les limites des transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) en GaN pour la conversion de puissance, l\u2019un des d\u00e9fis est de repousser la tenue en tension de cette fili\u00e8re. Dans ce cadre, nous avons, tout d\u2019abord, \u00e9tudi\u00e9 \u00e9lectriquement les couches tampons (buffer) par d\u00e9composition de l\u2019empilement. Plusieurs h\u00e9t\u00e9rostructures ont \u00e9t\u00e9 analys\u00e9es dont la croissance a \u00e9t\u00e9 stopp\u00e9e \u00e0 diff\u00e9rents stades. De cette mani\u00e8re, nous avons \u00e9t\u00e9 en mesure d&rsquo;\u00e9valuer s\u00e9par\u00e9ment le processus de conduction et de claquage de la couche de nucl\u00e9ation d&rsquo;AlN, du buffer AlGaN et de l&#8217;empilement des couches jusqu&rsquo;\u00e0 une couche GaN dop\u00e9e carbone. Une seconde \u00e9tude a permis de d\u00e9velopper un buffer \u00e0 base de super-r\u00e9seaux (pairs AlN\/GaN ultrafins). Afin de mettre en \u00e9vidence les avantages obtenus avec ce type de buffer une comparaison des caract\u00e9risations \u00e9lectriques avec un buffer standard a \u00e9t\u00e9 r\u00e9alis\u00e9e. Ensuite, nous avons d\u00e9velopp\u00e9 une approche innovante bas\u00e9e sur l\u2019introduction d\u2019une couche \u00e9paisse d\u2019AlN au sein de tranches grav\u00e9es suivie d\u2019un d\u00e9p\u00f4t par \u00e9lectrolyse de cuivre \u00e9pais en face arri\u00e8re. Le mat\u00e9riau AlN constitue une barri\u00e8re de potentiel apr\u00e8s le d\u00e9p\u00f4t de l\u2019\u00e9lectrode m\u00e9tallique sur la face-arri\u00e8re, \u00e9tape indispensable dans les convertisseurs de puissance de type DC\/DC par exemple. Apr\u00e8s avoir v\u00e9rifi\u00e9 le b\u00e9n\u00e9fice de cette solution en terme de tension de claquage, nous avons analys\u00e9 son impact sur les pi\u00e8ges et les contraintes m\u00e9caniques. Enfin, partant du principe que l&rsquo;\u00e9lectronique \u00e0 base de mat\u00e9riaux \u00e0 grands gaps tels que le GaN et le SiC arrivent \u00e0 maturit\u00e9, les mat\u00e9riaux \u00e0 ultra large bande interdite tels que l&rsquo;AlN (6,2 eV) ou l\u2019AlGaN riche en Al, pourraient permettre de repousser les limites en tension ou en temp\u00e9rature. En outre, l&rsquo;utilisation d&rsquo;un buffer AlN permettrait \u00e0 la fois d&rsquo;augmenter le confinement des \u00e9lectrons dans le canal du transistor mais aussi d&rsquo;am\u00e9liorer la dissipation thermique. Nous avons donc men\u00e9 une \u00e9tude pr\u00e9liminaire sur diff\u00e9rentes configurations de transistors \u00e0 base d\u2019AlN et de canaux en AlGaN.<\/p>\n<h5>Abstract:<\/h5>\n<p>Wide band gap semiconductors such as GaN and SiC are the materials of choice for high power applications. Indeed, the properties of the GaN material, in particular the high density and mobility of the electrons in the two-dimensional gas of the associated heterostructures, allow an excellent compromise between the on-state resistance (Ron) and the breakdown voltage. Moreover, recent progress in the growth of GaN on silicon substrate (111) gives hope for the future integration of high power low cost devices with mature CMOS technologies. In order to further push the limits of GaN high electron mobility transistors (HEMTs) for power conversion, one of the challenges is to push the voltage handling of this die. In this context, we first studied electrically the buffer layers by stack decomposition. Several heterostructures were analyzed and their growth was stopped at different stages. In this way, we were able to evaluate separately the conduction and breakdown process of the AlN nucleation layer, the AlGaN buffer and the stacking of the layers up to a carbon-doped GaN layer. In a second study, a buffer based on superlattices (ultrafine AlN\/GaN pairs) was developed. In order to highlight the advantages obtained with this type of buffer, a comparison of the electrical characterizations with a standard buffer was carried out. Then, we developed an innovative approach based on the introduction of a thick layer of AlN within etched wafers followed by an electrolytic deposition of thick copper on the back side. The AlN material constitutes a potential barrier after the deposition of the metal electrode on the backside, an essential step in DC\/DC power converters for example. After having verified the benefit of this solution in terms of breakdown voltage, we analyzed its impact on the traps and mechanical constraints. Finally, assuming that electronics based on large gap materials such as GaN and SiC are maturing, ultra wide band gap materials such as AlN (6.2 eV) or Al-rich AlGaN, could allow to push back the limits in voltage or temperature. In addition, the use of an AlN buffer would both increase the electron confinement in the transistor channel and improve the thermal dissipation. We have therefore conducted a preliminary study on different configurations of AlN-based transistors and AlGaN channels.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":20,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[317],"tags":[],"class_list":["post-55311","post","type-post","status-publish","format-standard","hentry","category-these-2021"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/55311","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/20"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=55311"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/55311\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=55311"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=55311"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=55311"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}