{"id":47631,"date":"2021-09-20T09:38:02","date_gmt":"2021-09-20T07:38:02","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=47631"},"modified":"2021-10-15T12:50:50","modified_gmt":"2021-10-15T10:50:50","slug":"these-de-caroline-maye-developpement-dun-banc-de-mesure-load-pull-en-bande-g-140-220-ghz-et-application-a-la-caracterisation-des-transistors-hbts-en-technologie-bicmos-55-nm","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/actualites\/these-de-caroline-maye-developpement-dun-banc-de-mesure-load-pull-en-bande-g-140-220-ghz-et-application-a-la-caracterisation-des-transistors-hbts-en-technologie-bicmos-55-nm.html","title":{"rendered":"Th\u00e8se de Caroline Maye \u2013 D\u00e9veloppement d\u2019un banc de mesure Load-Pull en bande G [140-220 GHz] et application \u00e0 la caract\u00e9risation des transistors HBTs en technologie BiCMOS 55 nm"},"content":{"rendered":"<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-16bajzj-6b66a00b594b2abe281a24744b1532c9\">\n.flex_column.av-16bajzj-6b66a00b594b2abe281a24744b1532c9{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-16bajzj-6b66a00b594b2abe281a24744b1532c9 av_one_full  avia-builder-el-0  avia-builder-el-no-sibling  first flex_column_div av-zero-column-padding'     ><section  class='av_textblock_section av-ktscw6np-94d4ce5cc5bd7d72a1dd09367d884ccc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><h3>Th\u00e8se \u2013 D\u00e9veloppement d\u2019un Banc de Mesure Load-Pull en Bande G [140-220 GHz] et Application \u00e0 la Caract\u00e9risation des Transistors HBTs en Technologie BiCMOS 55 nm<\/h3>\n<blockquote>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-mp4bdb-4604f5748400f7c578f21a4ec39885b9\">\n.av_font_icon.av-mp4bdb-4604f5748400f7c578f21a4ec39885b9 .av-icon-char{\nfont-size:40px;\nline-height:40px;\n}\n<\/style>\n<span  class='av_font_icon av-mp4bdb-4604f5748400f7c578f21a4ec39885b9 avia_animate_when_visible av-icon-style- avia-icon-pos-left av-no-color avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p>Caroline MAYE<\/p>\n<p><strong>Thesis defence<\/strong> : 21 septembre 2021 \u00e0 10h<\/p>\n<p>Amphitheater of the IEMN - Central Laboratory - Villeneuve d'Ascq<\/p>\n<\/blockquote>\n<h5><span style=\"color: #ffffff;\">e<\/span><br \/>\nJury :<\/h5>\n<p>\u2013 Mme Nathalie DELTIMPLE, Professeur des Universit\u00e9s, Bordeaux, Rapportrice<\/p>\n<p>\u2013 M. Denis Barataud, Professeur des Universit\u00e9s, Limoges, Rapporteur<\/p>\n<p>\u2013 M. Philippe FERRAI, Professeur des Universit\u00e9s, Grenoble-Alpes, Examinateur<\/p>\n<p>\u2013 M. Christophe LOYEZ, directeur de recherche au CNRS, IEMN, Examinateur<\/p>\n<p>\u2013 M. Daniel GLORIA, Ing\u00e9nieur \u00e0 ST Microelectronics, Crolles, Invit\u00e9<\/p>\n<p>\u2013 M. Fr\u00e9d\u00e9ric GAILLARD, Ing\u00e9nieur \u00e0 CEA, Grenoble, Invit\u00e9<\/p>\n<p>\u2013 M. Guillaume Ducournau, Professeur des Universit\u00e9s, IEMN, Universit\u00e9 de Lille, Co-directeur de th\u00e8se<\/p>\n<p>\u2013 M. Christophe GAQUIERE, Professeur des Universit\u00e9s, IEMN, Universit\u00e9 de Lille, Directeur de th\u00e8se<\/p>\n<h5>Summary:<\/h5>\n<p>La technologie BiCMOS 55 nm, fabriqu\u00e9 par STMicroelectronics, montre un fort potentiel pour les applications dans les gammes de fr\u00e9quences millim\u00e9triques et sub-millim\u00e9triques. Elle dispose d\u2019un transistor bipolaire \u00e0 h\u00e9t\u00e9rojonction (HBT) dont les fr\u00e9quences caract\u00e9ristiques, ft et fmax, atteignent 320 et 370 GHz respectivement. Son d\u00e9veloppement engage des processus longs de fabrication et de validation. Dans ces travaux, il est ainsi question de d\u00e9velopper un banc de caract\u00e9risation load-pull aux fr\u00e9quences sup\u00e9rieures \u00e0 140 GHz. La r\u00e9alisation de ce banc est encore limit\u00e9e par les performances en puissance des sources, des d\u00e9tecteurs et des synth\u00e9tiseurs d\u2019imp\u00e9dance disponibles dans le commerce. \u00c0 travers un \u00e9tat de l\u2019art des solutions pr\u00e9c\u00e9demment r\u00e9alis\u00e9es, une solution hybride est propos\u00e9e. Pour une utilisation p\u00e9renne du banc de mesure, la source, semblable \u00e0 l\u2019architecture d\u2019une t\u00eate d\u2019extension d\u2019un VNA, ainsi que les d\u00e9tecteurs, sont conserv\u00e9s off-wafer. Une attention particuli\u00e8re est donn\u00e9e aux \u00e9tapes de calibrage au cours desquelles est mise en \u00e9vidence la difficult\u00e9 de la mesure scalaire aux fr\u00e9quences millim\u00e9triques. D\u2019autre part, le tuner d\u2019imp\u00e9dance est int\u00e9gr\u00e9 sur puce avec le HBT afin de s\u2019affranchir des pertes de la sonde RF. Ce tuner est design\u00e9 en technologie BiCMOS 55 nm. Le nombre de commandes est volontairement minimis\u00e9 afin d\u2019envisager une mise en boitier pour une utilisation \u00e0 long terme. Une architecture innovante est \u00e9galement pr\u00e9sent\u00e9e. En parall\u00e8le, un programme d\u2019automatisation est mis en place pour am\u00e9liorer la pr\u00e9cision de mesure, effectuer le calcul des param\u00e8tres du composant et r\u00e9duire le temps de mesure. Finalement, des mesures load-pull sont r\u00e9alis\u00e9es \u00e0 185 GHz sur le transistor bipolaire \u00e0 h\u00e9t\u00e9rojonction et pour plusieurs dimensions.<br \/>\n<span style=\"color: #ffffff;\">e<\/span><\/p>\n<h5>Abstract:<\/h5>\n<p>The 55nm BiCMOS technology, manufactured by STMicroelectronics, shows great potential for applications in the millimetre and sub-millimetre frequency ranges. It features a heterojunction bipolar transistor (HBT) with characteristic frequencies, , f_t and f_max, of 320 and 370 GHz respectively. Its development involves lengthy manufacturing and validation processes. In this work, the aim is to develop a load-pull characterisation bench at frequencies above 140 GHz. The realisation of this bench is still limited by the power performance of the sources, detectors and impedance synthesizers available on the market. Through a state of the art of the solutions previously realized, a hybrid solution is proposed. The source, similar to the architecture of a VNA extension head, as well as the detectors are kept off-wafer for a perennial use of the measurement bench. Particular attention is given to the calibration steps, during which the difficulty of scalar measurement at millimetre frequencies is highlighted. In addition, the impedance tuner is integrated on-chip with the HBT in order to avoid the losses of the RF probe. This tuner is designed in the BiCMOS 55 nm technology. The number of control voltages is deliberately minimised in order to allow for long-term use in a box. An innovative architecture is also presented. In parallel, an automation program is implemented to improve the measurement accuracy, perform the calculation of the component parameters and reduce the measurement time. Finally, load-pull measurements are performed at 185 GHz on the heterojunction bipolar transistor and for several dimensions.<\/p>\n<\/div><\/section><\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":47634,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[8,40],"tags":[],"class_list":["post-47631","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites","category-articles-temporaires-anglais"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/47631","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=47631"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/47631\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/47634"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=47631"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=47631"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=47631"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}