{"id":4671,"date":"2013-10-09T11:32:12","date_gmt":"2013-10-09T09:32:12","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=4671"},"modified":"2013-10-09T11:33:13","modified_gmt":"2013-10-09T09:33:13","slug":"seminaire-du-groupe-physique","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/news\/seminaire-du-groupe-physique.html","title":{"rendered":"S\u00e9minaire du Groupe Physique"},"content":{"rendered":"

Characterization of Phosphorus Doped Silicon Nanocrystals Embedded in SiO2<\/h2>\n

October 17, 2013 \u2013\u00a0at 2pm\u00a0\u2013 IEMN, LCI \u2013 Salle du Conseil<\/span><\/p>\n

Presenter
\n<\/strong><\/span>Sebastian Gutsch \u2013 University of Freiburg
\nsebastian.gutsch@imtek.uni-freiburg.de<\/a><\/span><\/p>\n

Abstract
\n<\/strong><\/span>Phosphorus (P) doped silicon nanocrystals (Si NCs)\u00a0\u00a0 are prepared by deposition and annealing of P doped silicon-rich oxide \/\u00a0\u00a0 silicon oxide (SiO2) multilayers. The chemical environment of P is\u00a0\u00a0 determined from X-ray photoelectron and X-ray absorption near edge\u00a0\u00a0 spectroscopy. It is found that P is incorporated into the Si NCs down to\u00a0\u00a0 diameters of about 2.5 nm. However, the results suggest that essentially no\u00a0\u00a0 free electrons are generated in this doping process. Using atom probe\u00a0\u00a0 tomography, it is further found that large amounts of the dopants segregate\u00a0\u00a0 at the Si NC \/ SiO2 interface. In addition, photoluminescence\u00a0\u00a0 spectroscopy and electrical characterization of the multilayers indicate that\u00a0\u00a0 the majority of incorporated P atoms have only a small impact on the optical\u00a0\u00a0 and electronic properties. It is shown that less than 1% of the doped P atoms\u00a0\u00a0 occupy a substituitional site and that the donor ionization energy\u00a0\u00a0 significantly exceeds kT at room temperature.<\/p>","protected":false},"excerpt":{"rendered":"

Characterization of Phosphorus Doped Silicon Nanocrystals Embedded in SiO2 October 17, 2013 - at 2pm - IEMN, LCI - Salle du Conseil Presenter Sebastian Gutsch - University of Freiburg sebastian.gutsch@imtek.uni-freiburg.de Abstract Phosphorus (P) doped silicon nanocrystals (Si NCs) are prepared by deposition and annealing of P doped silicon-rich oxide \/ silicon oxide (SiO2) multilayers. The chemical environment [...]<\/p>","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[12],"tags":[],"class_list":["post-4671","post","type-post","status-publish","format-standard","hentry","category-news"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/4671","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=4671"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/4671\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=4671"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=4671"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=4671"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}