{"id":46614,"date":"2021-07-08T08:55:16","date_gmt":"2021-07-08T06:55:16","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=46614"},"modified":"2021-10-11T16:49:10","modified_gmt":"2021-10-11T14:49:10","slug":"46614","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/actualites\/46614.html","title":{"rendered":"Idriss ABID's thesis - New electronic components based on AlN material for future power applications"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_zm128e83xcc1\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-46614'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-kqujrmnj-eb5e8dbcf8fbe71c32bbe2f42d5f4f05\">\n#top .av-special-heading.av-kqujrmnj-eb5e8dbcf8fbe71c32bbe2f42d5f4f05{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-kqujrmnj-eb5e8dbcf8fbe71c32bbe2f42d5f4f05 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-kqujrmnj-eb5e8dbcf8fbe71c32bbe2f42d5f4f05 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-kqujrmnj-eb5e8dbcf8fbe71c32bbe2f42d5f4f05 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : Idriss ABID \u2013 Nouveaux composants \u00e9lectroniques \u00e0 base du mat\u00e9riau AlN pour les futures applications de puissance<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>Idriss ABID<\/strong><\/p>\n<p>Soutenance : 12 juillet 2021 \u00e0 10h30<strong><br \/>\n<\/strong>IEMN Amphitheatre - Central Laboratory - Villeneuve d'Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<ul>\n<li>Mme Nathalie LABAT, Professeur des Universit\u00e9s, Universit\u00e9 de Bordeaux, Rapporteuse<\/li>\n<li>M. Fr\u00e9d\u00e9ric MORANCHO, Professeur des Universit\u00e9s, Universit\u00e9 de Toulouse, Rapporteur<\/li>\n<li>M. Abdallah OUGAZZADEN, Professeur, Georgia Institute of Technology (GIT)\/School of ECE , Examinateur<\/li>\n<li>M. Yvon CORDIER, Directeur de recherche CNRS, CRHEA, Valbonne, Examinateur<\/li>\n<li>M. Katir ZIOUCHE, Professeur, Universit\u00e9 de Lille, Lille, Examinateur<\/li>\n<li>M. Farid MEDJDOUB, Chercheur CNRS, IEMN, Villeneuve d\u2019Ascq, Directeur de th\u00e8se<\/li>\n<\/ul>\n<h5>Summary:<\/h5>\n<p>Les semiconducteurs \u00e0 large bande interdite tels que le GaN et SiC sont des mat\u00e9riaux de choix pour les applications de forte puissance. En effet, les propri\u00e9t\u00e9s du mat\u00e9riau GaN, notamment la haute densit\u00e9 et mobilit\u00e9 des \u00e9lectrons du gaz bidimensionnel des h\u00e9t\u00e9rostructures associ\u00e9es permettent de r\u00e9aliser un excellent compromis entre la r\u00e9sistance \u00e0 l\u2019\u00e9tat passant (Ron) et la tension de claquage. De plus, les r\u00e9cents progr\u00e8s en mati\u00e8re de croissance de GaN sur substrat silicium (111) laissent esp\u00e9rer l\u2019int\u00e9gration future de composants de forte puissance \u00e0 bas co\u00fbt avec des technologies matures de type CMOS. Afin de repousser davantage les limites des transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) en GaN pour la conversion de puissance, l\u2019un des d\u00e9fis est de repousser la tenue en tension de cette fili\u00e8re.<br \/>\nDans ce cadre, nous avons, tout d\u2019abord, \u00e9tudi\u00e9 \u00e9lectriquement les couches tampons (buffer) par d\u00e9composition de l\u2019empilement. Plusieurs h\u00e9t\u00e9rostructures ont \u00e9t\u00e9 analys\u00e9es avec une croissance stopp\u00e9e \u00e0 diff\u00e9rents stades. De cette mani\u00e8re, nous avons \u00e9t\u00e9 en mesure d\u2019\u00e9valuer s\u00e9par\u00e9ment le processus de conduction et de claquage de la couche de nucl\u00e9ation d\u2019AlN, du buffer AlGaN et de l\u2019empilement des couches jusqu\u2019\u00e0 une couche GaN dop\u00e9e carbone. Une seconde \u00e9tude a permis de d\u00e9velopper un buffer \u00e0 base de super-r\u00e9seaux (pairs AlN\/GaN ultrafins). Afin de mettre en \u00e9vidence les avantages obtenus avec ce type de buffer, non seulement en termes de tenue en tension mais aussi d\u2019effets de pi\u00e8ges r\u00e9duits, une comparaison des caract\u00e9risations \u00e9lectriques avec un buffer standard a \u00e9t\u00e9 r\u00e9alis\u00e9e.<br \/>\nEnsuite, nous avons d\u00e9velopp\u00e9 une approche innovante bas\u00e9e sur l\u2019introduction d\u2019une couche \u00e9paisse d\u2019AlN au sein de tranches grav\u00e9es suivie d\u2019un d\u00e9p\u00f4t par \u00e9lectrolyse de cuivre \u00e9pais en face arri\u00e8re. Le mat\u00e9riau AlN constitue une barri\u00e8re de potentiel apr\u00e8s le d\u00e9p\u00f4t de l\u2019\u00e9lectrode m\u00e9tallique sur la face-arri\u00e8re, \u00e9tape indispensable dans les convertisseurs de puissance de type DC\/DC par exemple. Apr\u00e8s avoir v\u00e9rifi\u00e9 le b\u00e9n\u00e9fice de cette solution au niveau de la tension de claquage, nous avons analys\u00e9 son impact sur les pi\u00e8ges, la dissipation thermique et les contraintes m\u00e9caniques.<br \/>\nEnfin, partant du principe que l\u2019\u00e9lectronique \u00e0 base de mat\u00e9riaux \u00e0 grands gaps tels que le GaN et le SiC arrive \u00e0 maturit\u00e9, les mat\u00e9riaux \u00e0 ultra large bande interdite tels que l\u2019AlN (6,2 eV) ou l\u2019AlGaN riche en Al, pourraient permettre de repousser les limites en tension ou en temp\u00e9rature. En outre, l\u2019utilisation d\u2019un buffer AlN permettrait \u00e0 la fois d\u2019augmenter le confinement des \u00e9lectrons dans le canal du transistor mais aussi d\u2019am\u00e9liorer la dissipation thermique. Nous avons donc men\u00e9 une \u00e9tude pr\u00e9liminaire sur diff\u00e9rentes configurations de transistors \u00e0 base d\u2019AlN et de canaux en AlGaN, qui montre toutes les promesses de cette fili\u00e8re \u00e9mergente.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":46615,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[8],"tags":[],"class_list":["post-46614","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/46614","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=46614"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/46614\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/46615"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=46614"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=46614"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=46614"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}