{"id":46301,"date":"2021-06-22T08:42:59","date_gmt":"2021-06-22T06:42:59","guid":{"rendered":"https:\/\/www.iemn.fr\/articles-temporaires-anglais\/46274-2.html"},"modified":"2021-07-20T10:33:49","modified_gmt":"2021-07-20T08:33:49","slug":"46274-2","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/newsletter\/46274-2.html","title":{"rendered":"SiGe BiCMOS Technologies \u2013 The future for millimeter band applications, today"},"content":{"rendered":"<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_heading-e2e01ce5c506d2f0703e10cc2cdb2410\">\n#top .av-special-heading.av-av_heading-e2e01ce5c506d2f0703e10cc2cdb2410{\npadding-bottom:10px;\n}\nbody .av-special-heading.av-av_heading-e2e01ce5c506d2f0703e10cc2cdb2410 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-av_heading-e2e01ce5c506d2f0703e10cc2cdb2410 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-av_heading-e2e01ce5c506d2f0703e10cc2cdb2410 av-special-heading-h2 blockquote modern-quote modern-centered  avia-builder-el-0  el_before_av_one_third  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >SiGe BiCMOS Technologies \u2013 The future for millimeter band applications, today<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-11pf5sy-b821f7f5de32520c2f49c4e68b1de5ba\">\n.flex_column.av-11pf5sy-b821f7f5de32520c2f49c4e68b1de5ba{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-11pf5sy-b821f7f5de32520c2f49c4e68b1de5ba av_one_third  avia-builder-el-1  el_after_av_heading  el_before_av_two_third  first flex_column_div av-zero-column-padding'     ><section  class='av_textblock_section av-kq7oq3hp-92a5f806a16a59b3951321423b38006b'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-46275 alignleft\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG-300x238.jpg\" alt=\"\" width=\"300\" height=\"238\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG-300x238.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG-16x12.jpg 16w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG.jpg 488w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a><\/p>\n<\/div><\/section><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-wlxd5u-7f83301b021f4c8b89050ef801d0bc7e\">\n.flex_column.av-wlxd5u-7f83301b021f4c8b89050ef801d0bc7e{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-wlxd5u-7f83301b021f4c8b89050ef801d0bc7e av_two_third  avia-builder-el-3  el_after_av_one_third  el_before_av_one_full  flex_column_div av-zero-column-padding'     ><section  class='av_textblock_section av-kq7oqid0-c9e437770f789127c7b2ed8133f9e0ee'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><blockquote>\n<p><strong>Thanks to new advances in industrial BiCMOS SiGe technologies, these technologies show great promise for millimeter band applications. In the framework of the TARANTO project, IEMN has contributed to the demonstration of the performance of the 55nm BiCMOS technology from STMicroelectronics reaching cut-off frequencies of<\/strong> <a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/formuleCG2.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"size-full wp-image-46296 alignnone\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/formuleCG2.jpg\" alt=\"\" width=\"73\" height=\"20\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/formuleCG2.jpg 73w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/formuleCG2-16x4.jpg 16w\" sizes=\"auto, (max-width: 73px) 100vw, 73px\" \/><\/a><strong> of 480GHz and 600 GHz respectively, as well as the design and characterization of circuits in the 30-300 GHz band<\/strong><\/p>\n<\/blockquote>\n<\/div><\/section><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13lakrm-3b89401fb89d22bf2ee3d89e664d6022\">\n.flex_column.av-13lakrm-3b89401fb89d22bf2ee3d89e664d6022{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-13lakrm-3b89401fb89d22bf2ee3d89e664d6022 av_one_full  avia-builder-el-5  el_after_av_two_third  el_before_av_textblock  first flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-k4ryea-fe326c9ff79037030a9476e033f93f79'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><\/div><\/section><\/div>\n<section  class='av_textblock_section av-kq7oj7iq-47c9ab26b665303f17ddf26a5a4dd8ca'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><p><strong>The millimeter frequency band, between 30 and 300 GHz, is attracting more and more attention in the solid state integrated circuit community with numerous applications. These include medical, security and telecom applications that take advantage of the increased spatial resolution or frequency bandwidth in this frequency range.<\/strong><br \/>\n<strong> Historically, circuits for applications in this frequency band have been designed based on III-V technologies, because silicon-based technologies were not able to meet the noise figure and power. Thanks to the European efforts in the SiGe BiCMOS field, this technology is now able to meet the needs in the millimeter band.<\/strong><br \/>\n<strong> This work [1] was conducted within the Power and THz teams of the IEMN, in the framework of the TARANTO project which gathered more than 30 European partners from 6 different countries. In [1], the main milestones of this project are presented, covering a wide range of results, from the design and characterization of heterojunction transistors (HBTs), through circuits to complete telecommunication systems.<\/strong><\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG_2.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-46276 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG_2.jpg\" alt=\"\" width=\"800\" height=\"353\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG_2.jpg 800w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG_2-300x132.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG_2-768x339.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG_2-16x7.jpg 16w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/visuel_article_bicmos_CG_2-705x311.jpg 705w\" sizes=\"auto, (max-width: 800px) 100vw, 800px\" \/><\/a><\/p>\n<\/div><\/section>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-14ldg0y-97210d4d566f6450aa0b240e5ff4cd4d\">\n.flex_column.av-14ldg0y-97210d4d566f6450aa0b240e5ff4cd4d{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-14ldg0y-97210d4d566f6450aa0b240e5ff4cd4d av_one_half  avia-builder-el-8  el_after_av_textblock  el_before_av_one_half  first flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-kq7okkdz-cb1c3e0ae8da7e68fe35d82b98f15d87'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08\">\n.av_font_icon.av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08 .av-icon-char{\nfont-size:20px;\nline-height:20px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue871' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p>Regarding transistors, cutoff frequencies <a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/formuleCG.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-46294 size-full alignnone\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/formuleCG.jpg\" alt=\"\" width=\"54\" height=\"15\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/formuleCG.jpg 54w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/06\/formuleCG-16x4.jpg 16w\" sizes=\"auto, (max-width: 54px) 100vw, 54px\" \/><\/a>of 320\/370 GHz have been measured on the commercial 55 nm BiCMOS technology from STMicroelectronics. It is underlined that much better performances have been measured in terms of cut-off frequencies in SiGe technologies that do not integrate field effect transistors (CMOS) via the partner IHP (Leibniz Institute for High Performance Microelectronics). The IEMN has been strongly involved in the characterization phase of these transistors through power and noise measurements, which have been improved through the design of noise generators and impedance tuners integrated into the components to be measured. These developments have shown that not only this technology is capable of meeting the needs in the millimeter frequency band with very promising performances but also that the tools and methods of characterization implemented in the laboratory by the Power and Photonics-THz teams in collaboration with the Central Micro Nano Fabrication Platform (CMNF) are more efficient than off-chip solutions thanks to the physical proximity of the measurement elements with the device under test<\/p>\n<\/div><\/section><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-ohu3s2-5f5203a3cce35b1b132b353c9bed89dd\">\n.flex_column.av-ohu3s2-5f5203a3cce35b1b132b353c9bed89dd{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-ohu3s2-5f5203a3cce35b1b132b353c9bed89dd av_one_half  avia-builder-el-11  el_after_av_one_half  el_before_av_one_full  flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-kq7okyk8-8b08e5b71253b1be0c3c33146c2133fe'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08\">\n.av_font_icon.av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08 .av-icon-char{\nfont-size:20px;\nline-height:20px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue871' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p>Concerning the demonstrators, two examples can be cited. The first, a direct conversion mixer in W band (91-100 GHz) with +5 dB of conversion gain. This mixer has as a particularity its low power consumption, which amounts to 21.8 mW. The second, an active frequency quadrupler. This device has an output power of -26 dBm over a very wide range of frequencies between 120 and 160 GHz for a conversion gain of +4 dB.<\/p>\n<p>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08\">\n.av_font_icon.av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08 .av-icon-char{\nfont-size:20px;\nline-height:20px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-d9a3c433f95a8ada0341ef5516a26d08 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue871' data-av_iconfont='entypo-fontello' ><\/span><\/span>Finally, the compact models developed during this project have allowed the design of telecommunication systems, such as a demonstrator integrating frequency multiplication, I\/Q modulation, power amplification, mixing\u2026 These systems have been integrated on a PCB (printed circuit board) allowing the transmission of telecom signals at 140 GHz with an equivalent isotropic radiated power (EIRP) of 27 dBm.<\/p>\n<\/div><\/section><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-i8yole-11f80c71dd7a6f07de83822ed48a8a4b\">\n.flex_column.av-i8yole-11f80c71dd7a6f07de83822ed48a8a4b{\nborder-radius:5px 5px 5px 5px;\npadding:5px 5px 5px 5px;\nbackground-color:#e8e8e8;\n}\n<\/style>\n<div  class='flex_column av-i8yole-11f80c71dd7a6f07de83822ed48a8a4b av_one_full  avia-builder-el-15  el_after_av_one_half  el_before_av_textblock  first flex_column_div  column-top-margin'     ><section  class='av_textblock_section av-kq7olztb-7ed5c705637575474737c2cca5d30411'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><p><em>[1] T. Zimmer et al., \u00ab\u00a0SiGe HBTs and BiCMOS Technology for Present and Future Millimeter-Wave Systems,\u00a0\u00bb in <a href=\"https:\/\/ieeexplore.ieee.org\/document\/9318746\/authors#authors\" target=\"_blank\" rel=\"noopener\"><strong>IEEE Journal of Microwaves, vol. 1, no. 1, pp. 288-298, winter 2021, doi: 10.1109\/JMW.2020.3031831.<\/strong><\/a><\/em><\/p>\n<\/div><\/section><\/div>\n<section  class='av_textblock_section av-krbsv5wx-6b20287e4cf46e2575c15411953a70e0'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='avia-button-wrap av-rpqvoq-5c413d937622b92e399321cb589ef64b-wrap avia-button-left  avia-builder-el-18  avia-builder-el-no-sibling'><a href='mailto:christophe.gaquiere@univ-lille.fr'  class='avia-button av-rpqvoq-5c413d937622b92e399321cb589ef64b av-link-btn avia-icon_select-yes-left-icon avia-size-small avia-position-left avia-color-silver'   aria-label=\"christophe.gaquiere@univ-lille.fr\"><span class='avia_button_icon avia_button_icon_left' aria-hidden='true' data-av_icon='\ue805' data-av_iconfont='entypo-fontello'><\/span><span class='avia_iconbox_title' >christophe.gaquiere@univ-lille.fr<\/span><\/a><\/div>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[297],"tags":[],"class_list":["post-46301","post","type-post","status-publish","format-standard","hentry","category-newsletter"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/46301","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=46301"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/46301\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=46301"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=46301"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=46301"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}