{"id":44628,"date":"2021-03-05T15:01:34","date_gmt":"2021-03-05T13:01:34","guid":{"rendered":"https:\/\/www.iemn.fr\/articles-temporaires-anglais\/vers-des-transistors-de-puissance-a-haut-rendement-en-gamme-dondes-millimetriques-2.html"},"modified":"2021-03-05T15:22:40","modified_gmt":"2021-03-05T13:22:40","slug":"vers-des-transistors-de-puissance-a-haut-rendement-en-gamme-dondes-millimetriques-2","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/newsletter\/vers-des-transistors-de-puissance-a-haut-rendement-en-gamme-dondes-millimetriques-2.html","title":{"rendered":"GaN\u2010Based HEMTs for Millimeter\u2010wave Applications"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_one_full  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_27_eb4ckm06tgm7\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" 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https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/06\/Slider_CMNF4-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/06\/Slider_CMNF4-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/06\/Slider_CMNF4-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/06\/Slider_CMNF4-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;height:30px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);width:260px;\" class=\"ls-l ls-ib-icon ls-text-layer\"><i class=\"fa fa-user-circle\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>LA RECHERCHE \u00e0 l'IEMN<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-44628'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-oqvuwd-13cf37f580d563e1d1578a3f804b6a20\">\n.flex_column.av-oqvuwd-13cf37f580d563e1d1578a3f804b6a20{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-oqvuwd-13cf37f580d563e1d1578a3f804b6a20 av_one_full  avia-builder-el-1  el_after_av_layerslider  el_before_av_one_full  avia-builder-el-first  first flex_column_div av-zero-column-padding'     ><section  class='av_textblock_section av-klway7b1-892a4c644e2ecb0961d760bc323e0be7'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><h4 class=\"citation__title\" style=\"text-align: center;\"><u>Development of AlN\/GaN HEMTs at IEMN <\/u><\/h4>\n<hr \/>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/03\/visuel_fm_1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-44622 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/03\/visuel_fm_1.jpg\" alt=\"\" width=\"600\" height=\"326\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/03\/visuel_fm_1.jpg 600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/03\/visuel_fm_1-300x163.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/03\/visuel_fm_1-16x9.jpg 16w\" sizes=\"auto, (max-width: 600px) 100vw, 600px\" \/><\/a><\/p>\n<p>The increasing demand for bandwidth and data transmission speed for future applications such as 5G networks, satellite communications or radar requires the manufacturing of components delivering increased performance in the millimeter wave range. Silicon-based integrated circuits are limited to output powers in the order of a few watts up to Ka-band (26-40 GHz). Gallium nitride (GaN), in combination with a highly thermally conductive silicon carbide (SiC) substrate, offers significant advantages in power applications, such as a voltage withstand capability 5 to 10 times higher than traditional silicon or gallium arsenide based semiconductors, as well as improved heat dissipation. Nevertheless, the main limitations of this die are the power added efficiency (PAE) which defines the energy efficiency of the amplifiers, the control of trap effects which is essential in RADAR applications, as well as the reliability of transistors with reduced dimensions (ultra-short sub-150 nm gates). Researchers at IEMN in collaboration with SOITEC-Belgium have developed an approach offering the possibility of reducing the dimensions of GaN transistors while fully exploiting the potential of this emerging material. This work was supported by the Renatech network, the European Defense Agency (EUGANIC project) and the DGA\/AID (French Ministry of Defence). The support of these partners enabled the acquisition of an expensive narrow-band power amplifier (40 GHz) delivering high power (&gt; 10 W) as well as the associated elements (connectors, couplers, pulsed generators etc.). This important update makes the functionalities of this NVNA power bench at IEMN on this frequency band almost unique in Europe (i.e. high power active load pull type measurements in pulsed and CW regime).<\/p>\n<p>In this context, a specific heterostructure has been developed in order to overcome the technological bottlenecks in terms of reliability, exacerbated trap effects and efficiency for 100 nm gate GaN transistors operating at voltages higher than 15 V. This solution is based on the implementation of an ultra-thin AlN barrier layer. This layer with a thickness of less than 5 nm is favorable for frequency rise while delivering a high electron density. An SiN layer grown in-situ covers the barrier. It not only increases the robustness of the surface under strong electric field and\/or temperature but also strongly reduces the effects of traps. Finally, the buffer layers have been designed to promote heat dissipation. The combination of these elements combined with an optimized manufacturing process has allowed to demonstrate unprecedented efficiencies of more than 70% at 40 GHz under high power density (&gt; 5 W\/mm). The absence of degradation during preliminary reliability measurements over a few tens of hours at different temperatures can also be noted. These results therefore open the way to a new range of millimeter wave power components, towards high efficiency power transistors in the millimeter wave range.<\/p>\n<\/div><\/section><\/div>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-klwb97dn-e345b3900a5636c66d374b9ab115d74b\">\n.flex_column.av-klwb97dn-e345b3900a5636c66d374b9ab115d74b{\nborder-radius:px px px px;\npadding:10px 10px 10px 10px;\nbackground-color:#edd5b1;\n}\n<\/style>\n<div  class='flex_column av-klwb97dn-e345b3900a5636c66d374b9ab115d74b av_one_full  avia-builder-el-3  el_after_av_one_full  el_before_av_one_full  first flex_column_div  column-top-margin'     ><section  class='av_textblock_section av-klwb8i3l-ac80b69fda48569a00e716f0b8424621'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><h5>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-973012d98f8bbb22dd043be76ebf5329\">\n.av_font_icon.av-13ewzjw-973012d98f8bbb22dd043be76ebf5329{\ncolor:#761713;\nborder-color:#761713;\n}\n.av_font_icon.av-13ewzjw-973012d98f8bbb22dd043be76ebf5329 .av-icon-char{\nfont-size:40px;\nline-height:40px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-973012d98f8bbb22dd043be76ebf5329 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue842' data-av_iconfont='entypo-fontello' ><\/span><\/span><br \/>\nReferences<\/h5>\n<p>\u00b7\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 GaN\u2010Based HEMTs for Millimeter\u2010wave Applications, Kathia Harrouche, and Farid Medjdoub, Chapter 3 from Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices book, <a href=\"https:\/\/doi.org\/10.1002\/9783527825264.ch3\" target=\"_blank\" rel=\"noopener\">https:\/\/doi.org\/10.1002\/9783527825264.ch3<\/a><\/p>\n<p>\u00b7\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 High Performance and Highly Robust AlN\/GaN HEMTs for Millimeter-Wave Operation, K. Harrouche, R. Kabouche, E. Okada, and F. Medjdoub, IEEE J. of the Elec. Devices Soc. (7) <a href=\"https:\/\/doi.org\/10.1109\/JEDS.2019.2952314\" target=\"_blank\" rel=\"noopener\">https:\/\/doi.org\/10.1109\/JEDS.2019.2952314<\/a><\/p>\n<\/div><\/section><\/div><\/p>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_one_full-25347b0a799d5b9f7058434b2a9c3182\">\n.flex_column.av-av_one_full-25347b0a799d5b9f7058434b2a9c3182{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-av_one_full-25347b0a799d5b9f7058434b2a9c3182 av_one_full  avia-builder-el-6  el_after_av_one_full  avia-builder-el-last  first flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-klwbv41z-70becd18c56468699ccd21b36cc626ac'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='avia-button-wrap av-rpqvoq-fdc13dcb4c5500d8f83cd148a8f1d264-wrap avia-button-left  avia-builder-el-8  avia-builder-el-no-sibling'><a href='mailto:farid.medjdoub@univ-lille.fr'  class='avia-button av-rpqvoq-fdc13dcb4c5500d8f83cd148a8f1d264 av-link-btn avia-icon_select-yes-left-icon avia-size-small avia-position-left avia-color-silver'   aria-label=\"farid.medjdoub@univ-lille.fr\"><span class='avia_button_icon avia_button_icon_left' aria-hidden='true' data-av_icon='\ue805' data-av_iconfont='entypo-fontello'><\/span><span class='avia_iconbox_title' >farid.medjdoub@univ-lille.fr<\/span><\/a><\/div>\n<\/div><\/section><\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[297],"tags":[],"class_list":["post-44628","post","type-post","status-publish","format-standard","hentry","category-newsletter"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/44628","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=44628"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/44628\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=44628"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=44628"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=44628"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}