{"id":44621,"date":"2021-03-05T15:01:34","date_gmt":"2021-03-05T13:01:34","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=44621"},"modified":"2021-03-12T15:02:03","modified_gmt":"2021-03-12T13:02:03","slug":"vers-des-transistors-de-puissance-a-haut-rendement-en-gamme-dondes-millimetriques","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/newsletter\/vers-des-transistors-de-puissance-a-haut-rendement-en-gamme-dondes-millimetriques.html","title":{"rendered":"Vers des transistors de puissance \u00e0 haut rendement en gamme d\u2019ondes millim\u00e9triques"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_one_full  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_27_1b06j1gk9qjeg\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div 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l'IEMN<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-44621'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-oqvuwd-13cf37f580d563e1d1578a3f804b6a20\">\n.flex_column.av-oqvuwd-13cf37f580d563e1d1578a3f804b6a20{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-oqvuwd-13cf37f580d563e1d1578a3f804b6a20 av_one_full  avia-builder-el-1  el_after_av_layerslider  el_before_av_one_full  avia-builder-el-first  first flex_column_div av-zero-column-padding'     ><section  class='av_textblock_section av-klway7b1-892a4c644e2ecb0961d760bc323e0be7'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><h4 style=\"text-align: center;\">Vers des transistors de puissance \u00e0 haut rendement en gamme d\u2019ondes millim\u00e9triques<\/h4>\n<hr \/>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/03\/visuel_fm_1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-44622 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/03\/visuel_fm_1.jpg\" alt=\"\" width=\"600\" height=\"326\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/03\/visuel_fm_1.jpg 600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/03\/visuel_fm_1-300x163.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/03\/visuel_fm_1-16x9.jpg 16w\" sizes=\"auto, (max-width: 600px) 100vw, 600px\" \/><\/a><\/p>\n<p>The growing demand for bandwidth and data transmission speed for future applications such as 5G networks, satellite communications or radar requires the manufacture of components delivering increased performance in the millimetre wave range. Silicon-based integrated circuits are limited to output powers of the order of a few watts in the Ka band (26-40 GHz). Combined with a silicon carbide (SiC) substrate with high thermal conductivity, gallium nitride (GaN) offers considerable advantages for power applications, such as a voltage withstand 5 to 10 times better than traditional semiconductors based on silicon or gallium arsenide, as well as better thermal dissipation. However, the main limitations of this technology are power added efficiency (PAE), which defines the energy efficiency of amplifiers, the control of trap effects, which is essential in RADAR applications, and the reliability of transistors with reduced dimensions (ultra-short sub-150 nm gates).<\/p>\n<p>Researchers at the IEMN, in collaboration with SOITEC-Belgium, have developed an approach that makes it possible to reduce the dimensions of GaN transistors while fully exploiting the potential of this emerging material. This work was supported by the Renatech network, the European Defence Agency (EUGANIC project) and the DGA\/AID (French Ministry of Defence). Support from these partners has enabled the acquisition of an expensive narrow-band (40 GHz) power amplifier delivering high power (&gt; 10 W), as well as the associated components (connectors, couplers, pulsed generators, etc.). The functionalities of this NVNA power bench at the IEMN in this frequency band (i.e. high-power active load pull measurements in pulsed and CW mode) give the IEMN a status that is virtually unique in Europe.<\/p>\n<p>In this context, a specific heterostructure has been developed to overcome the technological hurdles in terms of reliability, exacerbated trap effects and efficiency for 100 nm gate GaN transistors operating at voltages above 15 V. This solution is based on the implementation of an ultra-thin AlN barrier layer. With a thickness of less than 5 nm, this layer is conducive to frequency rise while delivering a high electron density. A layer of SiN, grown in situ, covers the barrier. This not only increases the robustness of the surface under high electric field and\/or temperature conditions, but also greatly reduces the effects of traps. Finally, the buffer layers have been designed to promote heat dissipation. The combination of these elements, together with an optimised manufacturing process, has made it possible to demonstrate unprecedented efficiencies of more than 70 % at 40 GHz at high power density (&gt; 5 W\/mm). The absence of degradation during preliminary reliability measurements over several tens of hours at different temperatures is also noteworthy. These results pave the way for a new range of millimetre-wave power components. They offer real potential for applications in terrestrial and satellite communications, such as 5G, with optimal coverage of rural areas, for example.<\/p>\n<\/div><\/section><\/div>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-klwb97dn-e345b3900a5636c66d374b9ab115d74b\">\n.flex_column.av-klwb97dn-e345b3900a5636c66d374b9ab115d74b{\nborder-radius:px px px px;\npadding:10px 10px 10px 10px;\nbackground-color:#edd5b1;\n}\n<\/style>\n<div  class='flex_column av-klwb97dn-e345b3900a5636c66d374b9ab115d74b av_one_full  avia-builder-el-3  el_after_av_one_full  el_before_av_one_full  first flex_column_div  column-top-margin'     ><section  class='av_textblock_section av-klwb8i3l-ac80b69fda48569a00e716f0b8424621'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><h5>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-973012d98f8bbb22dd043be76ebf5329\">\n.av_font_icon.av-13ewzjw-973012d98f8bbb22dd043be76ebf5329{\ncolor:#761713;\nborder-color:#761713;\n}\n.av_font_icon.av-13ewzjw-973012d98f8bbb22dd043be76ebf5329 .av-icon-char{\nfont-size:40px;\nline-height:40px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-973012d98f8bbb22dd043be76ebf5329 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue842' data-av_iconfont='entypo-fontello' ><\/span><\/span><br \/>\nReferences<\/h5>\n<p>\u00b7\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 GaN\u2010Based HEMTs for Millimeter\u2010wave Applications, Kathia Harrouche, and Farid Medjdoub, Chapter 3 from Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices book, <a href=\"https:\/\/doi.org\/10.1002\/9783527825264.ch3\" target=\"_blank\" rel=\"noopener\">https:\/\/doi.org\/10.1002\/9783527825264.ch3<\/a><\/p>\n<p>\u00b7\u00a0\u00a0\u00a0\u00a0\u00a0\u00a0 High Performance and Highly Robust AlN\/GaN HEMTs for Millimeter-Wave Operation, K. Harrouche, R. Kabouche, E. Okada, and F. Medjdoub, IEEE J. of the Elec. Devices Soc. (7) <a href=\"https:\/\/doi.org\/10.1109\/JEDS.2019.2952314\" target=\"_blank\" rel=\"noopener\">https:\/\/doi.org\/10.1109\/JEDS.2019.2952314<\/a><\/p>\n<\/div><\/section><\/div><\/p>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-25b0r1-fc742d32358a6eb83cbb3974bfe81779\">\n.flex_column.av-25b0r1-fc742d32358a6eb83cbb3974bfe81779{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-25b0r1-fc742d32358a6eb83cbb3974bfe81779 av_one_full  avia-builder-el-6  el_after_av_one_full  avia-builder-el-last  first flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-klwbt0ex-ab1ca2399cf61a5a9a2c478f68aae4ac'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='avia-button-wrap av-rpqvoq-fdc13dcb4c5500d8f83cd148a8f1d264-wrap avia-button-left  avia-builder-el-8  avia-builder-el-no-sibling'><a href='mailto:farid.medjdoub@univ-lille.fr'  class='avia-button av-rpqvoq-fdc13dcb4c5500d8f83cd148a8f1d264 av-link-btn avia-icon_select-yes-left-icon avia-size-small avia-position-left avia-color-silver'   aria-label=\"farid.medjdoub@univ-lille.fr\"><span class='avia_button_icon avia_button_icon_left' aria-hidden='true' data-av_icon='\ue805' data-av_iconfont='entypo-fontello'><\/span><span class='avia_iconbox_title' >farid.medjdoub@univ-lille.fr<\/span><\/a><\/div>\n<\/div><\/section><\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[297],"tags":[],"class_list":["post-44621","post","type-post","status-publish","format-standard","hentry","category-newsletter"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/44621","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=44621"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/44621\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=44621"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=44621"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=44621"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}