{"id":43771,"date":"2021-01-21T11:07:53","date_gmt":"2021-01-21T09:07:53","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=43771"},"modified":"2021-06-14T10:34:36","modified_gmt":"2021-06-14T08:34:36","slug":"43771","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/breves\/43771.html","title":{"rendered":"III-V semiconductor quantum well with honeycomb structuring for the production of quantum materials"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_one_full  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_52_gl9qez3l6jzu\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/11\/sliders_groupe_physique.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/11\/sliders_groupe_physique.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/11\/sliders_groupe_physique-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/11\/sliders_groupe_physique-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/11\/sliders_groupe_physique-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/11\/sliders_groupe_physique-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/11\/sliders_groupe_physique-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;background-position:0% 0%;background-repeat:no-repeat;mix-blend-mode:normal;top:231px;left:0px;height:30px;width:350px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-user-circle\" style=\"color:#f2f2f2;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>GROUPE DE RECHERCHE : PHYSIQUE<\/ls-layer><\/div><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/12\/sliders_groupe_physique2.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/12\/sliders_groupe_physique2.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/12\/sliders_groupe_physique2-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/12\/sliders_groupe_physique2-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/12\/sliders_groupe_physique2-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/12\/sliders_groupe_physique2-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/12\/sliders_groupe_physique2-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;background-position:0% 0%;background-repeat:no-repeat;mix-blend-mode:normal;top:231px;left:0px;height:30px;width:350px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-user-circle\" style=\"color:#f2f2f2;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>GROUPE DE RECHERCHE : PHYSIQUE<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-43771'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-ih6dwm-d040680b9001186d814d2fff8ec5bb58\">\n@keyframes av_boxShadowEffect_av-ih6dwm-d040680b9001186d814d2fff8ec5bb58-column {\n0%   { box-shadow:  0 0 0 0 #6b545a; opacity: 1; }\n100% { box-shadow:  0 0 10px 0 #6b545a; opacity: 1; }\n}\n.flex_column.av-ih6dwm-d040680b9001186d814d2fff8ec5bb58{\nbox-shadow: 0 0 10px 0 #6b545a;\nborder-radius:5px 5px 5px 5px;\npadding:5px 5px 5px 5px;\nbackground-color:#8c2020;\n}\n<\/style>\n<div  class='flex_column av-ih6dwm-d040680b9001186d814d2fff8ec5bb58 av_one_full  avia-builder-el-1  el_after_av_layerslider  el_before_av_one_full  avia-builder-el-first  first flex_column_div shadow-not-animated'     ><section  class='av_textblock_section av-kfqs577w-b7c3550467f47dce013a812928e5cad4'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><h3 style=\"text-align: center;\"><span style=\"color: #ffffff;\"><br \/>\nIII-V semiconductor quantum well with honeycomb structuring for the elaboration of quantum materials.<\/span><\/h3>\n<h3 style=\"text-align: center;\"><\/h3>\n<\/div><\/section><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-ikoudi-ce719c7151c34a2a581a30a09f49589c\">\n.flex_column.av-ikoudi-ce719c7151c34a2a581a30a09f49589c{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-ikoudi-ce719c7151c34a2a581a30a09f49589c av_one_full  avia-builder-el-3  el_after_av_one_full  el_before_av_one_third  first flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-kfqrakvy-93df2165636767a713382d76673ffecb'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-43776 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_1.jpg\" alt=\"\" width=\"794\" height=\"318\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_1.jpg 794w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_1-300x120.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_1-768x308.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_1-16x6.jpg 16w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_1-705x282.jpg 705w\" sizes=\"auto, (max-width: 794px) 100vw, 794px\" \/><\/a><\/p>\n<blockquote>\n<p>The last decade has seen the discovery of many materials with extraordinary electronic properties reflecting original quantum effects induced by their dimensionality and topology. Following the example of the physical effects found in graphene, can these properties be induced in semiconductor materials, the main components of the microelectronics industry? This is what IEMN researchers have just shown, in collaboration with colleagues from Utrecht, Shanghai, Bordeaux and Paris-Saclay, thanks to innovative nanotechnological approaches on III-V semiconductors.<\/p>\n<\/blockquote>\n<p>When a crystal is reduced to two dimensions, electrons have totally unusual and counterintuitive quantum properties. In some materials such as graphene, electrons can behave as relativistic massless particles, much like photons. On the other hand, in other materials, electrons can be placed in totally flat electronic strips, giving them an infinite mass. These flat-band electronic systems are currently attracting considerable interest from physicists. Indeed, since electrons have zero kinetic energy, very original quantum phases can be formed, for example superfluid phases.<\/p>\n<p>Can these effects be induced in artificial materials, whose properties would result from their manufacture and thus from electronic band engineering? This is the question that researchers from the IEMN and the Debye Institute in Utrecht have addressed. The track explored is to start from a medium in which electrons are originally perfectly free to move in two dimensions. Thanks to the application of a periodic potential, the electron waves are scattered by the potential, inducing the desired band dispersions under the effect of quantum interference. This approach requires to structure the free electron gas with a periodicity close to the electron wavelength, from a few nanometers to a few tens of nanometers depending on the chosen materials. It has been recently validated in Utrecht, in collaboration with the IEMN, in the case of electrons localized on a copper surface subjected to a periodic array of CO molecules displaced by means of a tunneling tip [1].<\/p>\n<p>Inducing these same effects in a conventional semiconductor, such as those used by the microelectronics industry, would obviously open up fascinating prospects for integratable quantum platforms compatible with microelectronic technologies. A first step towards this goal has just been taken and published in the journal Nano Letters [2]. A honeycomb lattice has been fabricated in an InGaAs quantum well using an original nanostructuring technique developed at the LCPO in Bordeaux, the block copolymer lithography which allows to reach lattice parameters of the order of 21 nm. Tunneling spectroscopy measurements performed at IEMN and Utrecht demonstrate a profound modification of the electronic band structure, as predicted. In particular, despite the disorder effects inherent to nano-lithography, the spectra have the expected characteristics by the formation of flat bands with a very high density of electronic states. This feat, which required pushing the limits of current lithography techniques, opens the way to the generation of non-trivial quantum phases in the most common semiconductor materials.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_2.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignleft wp-image-43782\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_2-300x201.jpg\" alt=\"\" width=\"328\" height=\"220\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_2-300x201.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_2-768x516.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_2-16x12.jpg 16w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_2-705x473.jpg 705w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2021\/01\/visuel_2.jpg 800w\" sizes=\"auto, (max-width: 328px) 100vw, 328px\" \/><\/a>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-925aad50f22a2afd6226a98946929556\">\n.av_font_icon.av-13ewzjw-925aad50f22a2afd6226a98946929556{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-13ewzjw-925aad50f22a2afd6226a98946929556 .av-icon-char{\nfont-size:40px;\nline-height:40px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-925aad50f22a2afd6226a98946929556 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue803' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/p>\n<h5><span style=\"color: #800000;\">Read more<\/span><\/h5>\n<p><em>[1] p Orbital Flat Band and Dirac Cone in the Electronic Honeycomb Lattice<\/em><br \/>\n<em>T.S. Gardenier, J.J. van den Broeke, J.R. Moes, I. Swart, C. Delerue, M.R. Slot, C. Morais Smith, and D. Vanmaekelbergh. ACS Nano 14 (10), 13638-13644 (2020).<\/em><br \/>\n<a href=\"https:\/\/dx.doi.org\/10.1021\/acsnano.0c05747\">https:\/\/dx.doi.org\/10.1021\/acsnano.0c05747<\/a><\/p>\n<p><em>[2] Engineering a Robust Flat Band in III\u2013V Semiconductor Heterostructures<\/em><br \/>\n<em>N.A. Franchina Vergel, L. Christiaan Post, D. Sciacca, M. Berthe, F. Vaurette, Y. Lambert, D. Yarekha, D. Troadec, C. Coinon, G. Fleury, G. Patriarche, T. Xu, L. Desplanque, X. Wallart, D. Vanmaekelbergh, C. Delerue, and B. Grandidier. Nano Letters\u00a0 21 (1), 680-685 (2021).<\/em><br \/>\n<a href=\"https:\/\/dx.doi.org\/10.1021\/acs.nanolett.0c04268\">https:\/\/dx.doi.org\/10.1021\/acs.nanolett.0c04268<\/a><\/p>\n<p>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-d7fc5bb5f69d7332ca6789112e6409b7\">\n.av_font_icon.av-13ewzjw-d7fc5bb5f69d7332ca6789112e6409b7{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-13ewzjw-d7fc5bb5f69d7332ca6789112e6409b7 .av-icon-char{\nfont-size:20px;\nline-height:20px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-d7fc5bb5f69d7332ca6789112e6409b7 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue89a' data-av_iconfont='entypo-fontello' ><\/span><\/span>supports ANR : ANR-16-CE24-0007-01 et ANR-17-CE09-0021-03<\/p>\n<\/div><\/section><\/div>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" 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