{"id":41877,"date":"2020-07-01T11:17:49","date_gmt":"2020-07-01T09:17:49","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=41877"},"modified":"2020-12-01T10:53:57","modified_gmt":"2020-12-01T08:53:57","slug":"impression-3d-sous-ultra-vide-pour-composants-mesoscopiques","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/newsletter\/impression-3d-sous-ultra-vide-pour-composants-mesoscopiques.html","title":{"rendered":"Impression 3D sous ultra-vide pour composants mesoscopiques"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_one_full  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_27_1kxxtxz2xdp62\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" 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class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-41877'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-u6a9it-47bc047f9b34f3d4a8e3d489ac9533f9\">\n.flex_column.av-u6a9it-47bc047f9b34f3d4a8e3d489ac9533f9{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-u6a9it-47bc047f9b34f3d4a8e3d489ac9533f9 av_one_full  avia-builder-el-1  el_after_av_layerslider  avia-builder-el-no-sibling  first flex_column_div av-zero-column-padding'     ><section  class='av_textblock_section av-kc35c5xv-2fe507a0a954740334acfd47d5160eea'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><h4>Impression 3D sous ultra-vide pour composants mesoscopiques<\/h4>\n<p>Un contr\u00f4le tr\u00e8s pr\u00e9cis des cristaux semiconducteurs \u00e0 l\u2019\u00e9chelle nanom\u00e9trique est devenu essentiel pour la fabrication des composants \u00e9lectroniques avanc\u00e9s ou pour certaines technologies quantiques. Dans ce contexte, les nanofils \u00e0 base de semiconducteurs III-V \u00e0 faible masse \u00e9lectronique pr\u00e9sentent des propri\u00e9t\u00e9s particuli\u00e8rement int\u00e9ressantes. La fabrication de circuits \u00e9lectroniques bas\u00e9s sur de tels objets n\u00e9cessite cependant leur mise en \u0153uvre sous forme d\u2019architectures complexes (r\u00e9seaux crois\u00e9s) de mani\u00e8re robuste et fiable tout en pr\u00e9servant leurs propri\u00e9t\u00e9s intrins\u00e8ques.<\/p>\n<blockquote>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2020\/07\/visuel.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-41878 alignleft\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2020\/07\/visuel-300x293.jpg\" alt=\"\" width=\"359\" height=\"346\" \/><\/a>Dans ce contexte, l\u2019\u00e9pitaxie par jets mol\u00e9culaires s\u00e9lective permet d\u2019\u00e9laborer des nano-cristaux localis\u00e9s pr\u00e9cis\u00e9ment \u00e0 la surface du substrat gr\u00e2ce \u00e0 l\u2019utilisation d\u2019un masque di\u00e9lectrique.\u00a0 Dans ce travail*, nous montrons comment cette m\u00e9thode de croissance peut \u00eatre utilis\u00e9e pour fabriquer des nanofils planaires compos\u00e9s d\u2019un c\u0153ur en InGaAs et d\u2019une coquille en InP. Une deuxi\u00e8me \u00e9tape de croissance s\u00e9lective permet \u00e9galement de parer ces nanofils de zones de contact fortement dop\u00e9es pour pouvoir fabriquer des transistors dont l\u2019espacement source\/drain peut \u00eatre ajust\u00e9 jusqu\u2019\u00e0 moins de 30 nm. Avec cette m\u00e9thode de fabrication ascendante \u00e9vitant toute \u00e9tape de gravure du semiconducteur, des composants avec diff\u00e9rentes longueurs ont \u00e9t\u00e9 fabriqu\u00e9s. Ils ont permis d\u2019\u00e9tudier les propri\u00e9t\u00e9s de transport \u00e9lectronique dans les nanofils jusqu\u2019\u00e0 tr\u00e8s basse temp\u00e9rature dans un r\u00e9gime de transport o\u00f9 les \u00e9lectrons sont susceptibles d\u2019\u00eatre balistiques.<\/p>\n<\/blockquote>\n<p><em>* \u00ab\u00a0Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts\u00a0\u00bb, A.Bucamp, C.Coinon, D.Troadec, S.Lepilliet, G.Patriarche, X.Wallart and L.Desplanque, Nano Research 13, p61\u201366 (2020) <\/em><a href=\"https:\/\/doi.org\/10.1007\/s12274-019-2572-8\"><em>https:\/\/doi.org\/10.1007\/s12274-019-2572-8<\/em><\/a><\/p>\n<\/div><\/section><\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[297],"tags":[],"class_list":["post-41877","post","type-post","status-publish","format-standard","hentry","category-newsletter"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/41877","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=41877"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/41877\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=41877"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=41877"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=41877"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}