{"id":41852,"date":"2020-06-30T10:27:25","date_gmt":"2020-06-30T08:27:25","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=41852"},"modified":"2020-06-30T10:30:48","modified_gmt":"2020-06-30T08:30:48","slug":"these-mahmoud-abou-daher-realisation-et-optimisation-de-transistors-hemt-gan-forte-puissance-et-haute-frequence-par-technologie-de-transfert-de-couches-sur-substrat-hote-analyse-de-robustesse-com","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/these\/these-mahmoud-abou-daher-realisation-et-optimisation-de-transistors-hemt-gan-forte-puissance-et-haute-frequence-par-technologie-de-transfert-de-couches-sur-substrat-hote-analyse-de-robustesse-com.html","title":{"rendered":"THESE : Mahmoud ABOU DAHER \u2013 R\u00e9alisation et optimisation de Transistors HEMT GaN forte puissance et haute fr\u00e9quence par technologie de transfert de couches sur substrat h\u00f4te, analyse de robustesse comparative avec solutions concurrentielles GaN"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_eh0u2vu2cktr\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, 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class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-41852'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-kc1o42qy-dc56f75db90911b6b7893a1ce987978a\">\n#top .av-special-heading.av-kc1o42qy-dc56f75db90911b6b7893a1ce987978a{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-kc1o42qy-dc56f75db90911b6b7893a1ce987978a .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-kc1o42qy-dc56f75db90911b6b7893a1ce987978a .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-kc1o42qy-dc56f75db90911b6b7893a1ce987978a av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : Mahmoud ABOU DAHER \u2013 R\u00e9alisation et optimisation de Transistors HEMT GaN forte puissance et haute fr\u00e9quence par technologie de transfert de couches sur substrat h\u00f4te, analyse de robustesse comparative avec solutions concurrentielles GaN<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<p><strong>Mahmoud ABOU DAHER<\/strong><\/p>\n<p>Soutenance : 20 juin 2020 \u00e0 10h00<strong><br \/>\n<\/strong>IEMN Amphitheatre - Central Laboratory - Villeneuve d'Ascq<br \/>\nCette th\u00e8se est en <strong>collaboration entre le LAAS de Toulouse et l\u2019IEMN<\/strong>.<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<ul>\n<li>Jean Guy TARTARIN, Directeur de Th\u00e8se, Professeur \u00e0 l\u2019universit\u00e9 de Toulouse<\/li>\n<li>Jean-Claude DE JAEGER, Professeur \u00e0 l\u2019Universit\u00e9 de Lille, Co-Directeur<\/li>\n<li>Marie LESECQ, Ma\u00eetre de conf\u00e9rences \u00e0 l\u2019universit\u00e9 de Lille, Encadrante<\/li>\n<li>Nathalie LABAT, Professeur \u00e0 l\u2019universit\u00e9 de Bordeaux, Rapporteur<\/li>\n<li>Yannick GUHEL, Ma\u00eetre de conf\u00e9rences HDR \u00e0 l\u2019universit\u00e9 de Caen, Rapporteur<\/li>\n<li>Jean-Pierre VILCOT, Directeur de recherches CNRS, IEMN, Examinateur<\/li>\n<li>Sylvain DELAGE, Ing\u00e9nieur de Recherches, THALES \u2013 III-V lab, Examinateur<\/li>\n<li>Benjamin DAMILANO, Charg\u00e9 de Recherches, CHREA (Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-\u00c9pitaxie et ses Applications), Examinateur<\/li>\n<\/ul>\n<h5>Summary:<\/h5>\n<p>Le march\u00e9 des t\u00e9l\u00e9communications tire profit des nouvelles technologies Nitrures qui sont en v\u00e9ritable rupture de performances par rapport aux technologies traditionnellement utilis\u00e9es. Les recherches actuelles ouvrent de nombreuses pistes et solutions alternatives afin de couvrir des contraintes parfois antagonistes de co\u00fbt, de performances et\/ou de fiabilit\u00e9. La plupart des HEMTs AlGaN \/ GaN est fabriqu\u00e9e sur un substrat de silicium hautement r\u00e9sistif \u00e0 faible co\u00fbt ou sur substrat SiC beaucoup plus on\u00e9reux et sensible du point de vue approvisionnement. Les contraintes de performances \u00e9lectriques requises lors de l\u2019int\u00e9gration de ces technologies dans les syst\u00e8mes radars, les satellites et en t\u00e9l\u00e9communication rendent les HEMTs tr\u00e8s d\u00e9pendants au param\u00e8tre de temp\u00e9rature de fonctionnement, essentiellement li\u00e9e \u00e0 la forte puissance dissip\u00e9e lors du transfert d\u2019\u00e9nergie statique\/dynamique. En effet, ces composants sont capables de g\u00e9n\u00e9rer des densit\u00e9s de puissance \u00e9lev\u00e9es dans le domaine des hyperfr\u00e9quences. Aussi, l\u2019augmentation de la fr\u00e9quence de fonctionnement s\u2019accompagne d\u2019une augmentation de la puissance dissip\u00e9e engendrant le ph\u00e9nom\u00e8ne d\u2019auto-\u00e9chauffement qui influe sur les performances des composants (I_(D,max), f_t, f_max\u2026).<\/p>\n<p>Dans ce contexte, plusieurs solutions ont d\u00e9j\u00e0 \u00e9t\u00e9 propos\u00e9es dans la litt\u00e9rature (utilisations des substrats composites, passivation des composants, etc\u2026). De plus, la technologie de transfert des HEMTs d\u2019un substrat de croissance initial vers un substrat h\u00f4te de bonne conductivit\u00e9 thermique (tel que le substrat de diamant) est une solution prometteuse, encore peu d\u00e9taill\u00e9e \u00e0 ce jour.<\/p>\n<p>L\u2019objectif de ce travail de th\u00e8se est d\u2019am\u00e9liorer la dissipation thermique et donc les performances et la fiabilit\u00e9 des transistors HEMT hautes fr\u00e9quences en utilisant la technologie de transfert de couche. Les h\u00e9t\u00e9rostructures AlGaN\/GaN sont d\u00e9velopp\u00e9es sur substrat de silicium par MOCVD au CHREA. Apr\u00e8s la fabrication des HEMTs sur substrat de silicium au sein du laboratoire IEMN, les composants (pour lesquels le substrat silicium a \u00e9t\u00e9 retir\u00e9) sont transf\u00e9r\u00e9s sur un substrat de diamant. Ce transfert est obtenu gr\u00e2ce \u00e0 un collage par thermocompression de couche d\u2019AlN pulv\u00e9ris\u00e9es sur chaque surface \u00e0 assembler (face arri\u00e8re des transistors et substrat diamant). Le proc\u00e9d\u00e9 de transfert d\u00e9velopp\u00e9 n\u2019a pas endommag\u00e9 la fonctionnalit\u00e9 des transistors HEMTs AlGaN\/GaN \u00e0 faible longueur de grille (L_g = 80 nm). Les transistors de d\u00e9veloppement 2\u00d735 \u00b5m transf\u00e9r\u00e9s sur diamant pr\u00e9sentent un courant I_(D,max) = 710 mA.mm-1, une fr\u00e9quence de coupure f_t de 85GHz et une fr\u00e9quence d\u2019oscillation f_max de 144GHz. Toutefois, la technique de transfert m\u00e9rite des phases d\u2019optimisations (notamment pour diminuer l\u2019\u00e9paisseur et am\u00e9liorer la qualit\u00e9 cristalline et la conductivit\u00e9 thermique des couches d\u2019AlN) afin de mieux satisfaire aux contraintes de r\u00e9duction de r\u00e9sistance thermique de cette couche d\u2019assemblage et ainsi limiter le ph\u00e9nom\u00e8ne d\u2019auto-\u00e9chauffement relev\u00e9 \u00e0 l\u2019issue de ces travaux de th\u00e8se.<\/p>\n<h5>Abstract:<\/h5>\n<p>Wireless telecommunication market largely benefits from new nitride technologies, which reach outstanding performance compared with traditional technologies. Current research is opening up many new strategies and alternative solutions to address simultaneously antagonist considerations such as cost, performances and\/or reliability. Most AlGaN \/ GaN HEMTs are fabricated on a low cost, highly resistive silicon substrate or on a much more expensive and supply sensitive SiC substrate. However, the electrical performance constraints required when these technologies are integrating into radar systems, satellites and in telecommunications systems make them dependent to the operating temperature parameter, mainly linked to the high power dissipation during static\/dynamic energy transfer. Indeed, these components are capable of generating high power densities in the microwave range. However, the operating frequency increase leads an increase of the power dissipation, generating the self-heating phenomenon which influences the devices performance (I_(D,max), f_t, f_max\u2026).<\/p>\n<p>In this context, several solutions were already proposed in the literature (use of composite substrates, passivation of devices, etc.).<br \/>\nFurthermore, the layer transfer technology to report HEMTs from growth substrate onto a host substrate with a good thermal conductivity (such as diamond substrate) is a promising solution, still poorly detailed to date.<\/p>\n<p>The objective of this thesis work is to improve the heat dissipation and thus the performance and reliability of high-frequency HEMT transistors by using a layer transfer technology. AlGaN \/ GaN heterostructures are grown on a silicon substrate by MOCVD at CHREA. After the fabrication of HEMTs on a silicon substrate, AlGaN \/ GaN devices (for which the silicon substrate has been removed) are transferred onto a CVD diamond substrate. This transfer is obtained by thermocompression bonding of sputtered AlN layers on each surface to be assembled (backside of the transistors and diamond substrate). This transfer process has not damaged the functionality of the transistors with short gate length (Lg = 80 nm). The AlGaN\/GaN HEMTs with a 2\u00d735 \u00b5m development transferred onto diamond of feature a current I_(D,max) = 710 mA .mm-1, a cutoff frequency f_t of 85GHz and an oscillation frequency f_max of 144GHz. However, this transfer technique requires optimization phases (especially to reduce thickness and improve the crystalline quality and thermal conductivity of AlN layers) in order to reduce the thermal resistance of this adhesion layer and to limit the self-heating phenomenon noted at the end of this thesis work.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[199],"tags":[],"class_list":["post-41852","post","type-post","status-publish","format-standard","hentry","category-these"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/41852","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=41852"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/41852\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=41852"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=41852"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=41852"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}