{"id":38642,"date":"2019-12-13T11:55:41","date_gmt":"2019-12-13T09:55:41","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=38642"},"modified":"2020-01-10T16:08:11","modified_gmt":"2020-01-10T14:08:11","slug":"38642","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/actualites\/38642.html","title":{"rendered":"Soutenance de th\u00e8se : Mohamed-Reda IREKTI \u2013 Fabrication de transistors HEMTs AlGaN\/GaN de haute fiabilit\u00e9 sur substrat free-standing GaN de haute qualit\u00e9"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_1td0rmy3pduyr\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-38642'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_heading-ff65d6c288e1c4774839db9e7923a5c6\">\n#top .av-special-heading.av-av_heading-ff65d6c288e1c4774839db9e7923a5c6{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-av_heading-ff65d6c288e1c4774839db9e7923a5c6 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-av_heading-ff65d6c288e1c4774839db9e7923a5c6 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-av_heading-ff65d6c288e1c4774839db9e7923a5c6 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : Fabrication de transistors HEMTs AlGaN\/GaN de haute fiabilit\u00e9 sur substrat free-standing GaN de haute qualit\u00e9<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<h5><strong style=\"font-size: 16px;\">Mohamed-Reda IREKTI<\/strong><\/h5>\n<p><strong>Jeudi 19 d\u00e9cembre 2019 <\/strong><strong>\u00e0 10h00<br \/>\n<\/strong>Amphitheatre of the IEMN-Laboratoire central - Villeneuve d'Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury :<\/span><\/strong><\/h5>\n<ul>\n<li>Jean-Claude\u00a0DE JAEGER,\u00a0Professeur,\u00a0Universit\u00e9 de Lille, IEMN UMR 8520\u00a0(Directeur de th\u00e8se)<\/li>\n<li>Jean Paul \u00a0SALVESTRINI,\u00a0Professeur adjoint,\u00a0Georgia Institute of Technology (Rapporteur)<\/li>\n<li>Bertrand \u00a0BOUDART,\u00a0Professeur,\u00a0Universit\u00e9 de CAEN Normandie \/ Laboratoire GREYC UMR CNRS 6072 (Rapporteur)<\/li>\n<li>Jean-Guy\u00a0TARTARIN,\u00a0Professeur,\u00a0Universit\u00e9 Paul Sabatier Toulouse \/ Laboratoire LAAS UPR CNRS 8001 (Laboratoire d&rsquo;analyse et d&rsquo;architecture des syst\u00e8mes) (Co Directeur de th\u00e8se)<\/li>\n<li>Marie\u00a0LESECQ,\u00a0Ma\u00eetre de Conf\u00e9rences,\u00a0Universit\u00e9 de Lille \/ IEMN UMR 8520 (Examinateur)<\/li>\n<li>Yvon\u00a0CORDIER,\u00a0Directeur de Recherche,\u00a0Laboratoire CRHEA (Centre de Recherche sur l&rsquo;H\u00e9t\u00e9ro-Epitaxie et ses Applications) UPR CNRS 010 (Examinateur)<\/li>\n<\/ul>\n<h5>Summary:<\/h5>\n<p>Le nitrure de gallium (GaN) constitue le meilleur candidat pour la r\u00e9alisation de transistors de type HEMT de puissance fonctionnant \u00e0 haute fr\u00e9quence. A l\u2019heure actuelle, en raison de la faible disponibilit\u00e9 de substrats GaN, la plupart des dispositifs sont fabriqu\u00e9s par h\u00e9t\u00e9ro-\u00e9pitaxie sur des substrats Si, SiC, ou saphir. Jusqu&rsquo;\u00e0 pr\u00e9sent, aucun de ces substrats n\u2019a permis la croissance directe de GaN de haute qualit\u00e9 cristalline.<\/p>\n<p>Par cons\u00e9quent, le d\u00e9veloppement de ces technologies doit faire face \u00e0 de nombreux d\u00e9fauts (densit\u00e9s de dislocations de l\u2019ordre de 108-1010cm-2) et \u00e0 des contraintes m\u00e9caniques notables (plusieurs centaines de MPa) apparaissant dans le mat\u00e9riau entrainant de nombreuses questions quant \u00e0 la fiabilit\u00e9 des dispositifs. Le but de cette th\u00e8se est de qualifier de nouveaux dispositifs \u00e9lectroniques de type HEMT pour les applications RF \u00e0 partir d&rsquo;une nouvelle strat\u00e9gie de substrat GaN pr\u00e9sentant une haute qualit\u00e9 cristalline. A partir de substrats GaN free-standing, la croissance d\u2019une couche tampon de GaN suffisamment \u00e9paisse et \u00e9lectriquement r\u00e9sistive est faite par MOCVD. Cette couche a pour utilit\u00e9 de limiter le couplage du substrat avec l\u2019h\u00e9t\u00e9rostructure AlGaN\/GaN et ainsi minimiser les courants de fuite et les pertes de propagation RF.<\/p>\n<p>La croissance de l\u2019h\u00e9t\u00e9rostructure HEMT AlGaN\/GaN est ensuite d\u00e9velopp\u00e9e sur ces substrats. Le proc\u00e9d\u00e9 technologique de fabrication des composants HEMTs AlGaN\/GaN sur substrat GaN pour des applications RF est ensuite d\u00e9velopp\u00e9 dans le cadre de ces travaux de th\u00e8se. Celui-ci a n\u00e9cessit\u00e9 le d\u00e9veloppement et l\u2019optimisation des diff\u00e9rentes \u00e9tapes technologiques. La lithographie \u00e9lectronique permet de r\u00e9aliser des composants avec des longueurs de grilles en T ultra-courtes (jusqu\u2019\u00e0 70 nm). Les caract\u00e9ristiques I-V en r\u00e9gimes DC et Puls\u00e9 et des mesures de param\u00e8tres S sont effectu\u00e9es pour d\u00e9terminer les fr\u00e9quences de coupure des transistors ainsi que des mesures de puissance hyperfr\u00e9quence. Un r\u00e9sultat \u00e0 l\u2019\u00e9tat de l\u2019art des HEMTs sur substrats GaN a \u00e9t\u00e9 obtenu avec une densit\u00e9 de puissance de 2W\/mm \u00e0 40GHz. Enfin, des mesures thermiques utilisant la cam\u00e9ra infra-rouge ont \u00e9t\u00e9 effectu\u00e9es pour \u00e9valuer la r\u00e9sistance thermique des transistors.<\/p>\n<h5>Abstract:<\/h5>\n<p>Gallium nitride is the best candidate for the fabrication of High Electron Mobility Transistors for high power \/ high frequency applications. Due to the lack of availability of GaN substrates, most of the devices are currently fabricated by hetero-epitaxy on Si, SiC or sapphire substrates. None of these substrates permits the direct growth of high quality GaN crystal. Therefore, many defects (TDD 108-1010 cm-2) and significant mechanical stress appear in the material leading many questions about the reliability of the devices.<\/p>\n<p>The aim of this work is to overcome these limitations and qualify new electronic devices for RF applications using GaN substrate with a high crystalline quality. Thick and electrically resistive GaN buffer layer is grown by MOCVD in order to limit leakage current and RF losses. AlGaN\/GaN HEMT Heterostructures is grown from these substrates.<\/p>\n<p>Technological process is developed during this thesis to fabricate AlGaN\/GaN devices on GaN substrate for RF applications. It necessitates the development and the optimization of the different technological steps. E-beam lithography based process is used to fabricate transistors with short gate-length down to 70nm. DC, pulsed characteristics and S-parameters measurements are performed to determine cut-off frequency of the transistors and microwave power measurements as well. A state-of-the-art result for HEMTs on GaN substrates was obtained with a power density of 2W\/mm at 40GHz. Finally, thermal measurement using infra-red camera were performed to evaluate transistor thermal resistance.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":38632,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[8],"tags":[],"class_list":["post-38642","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/38642","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=38642"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/38642\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/38632"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=38642"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=38642"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=38642"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}