{"id":38284,"date":"2019-11-21T13:09:55","date_gmt":"2019-11-21T11:09:55","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=38284"},"modified":"2019-11-28T15:57:25","modified_gmt":"2019-11-28T13:57:25","slug":"soutenance-de-these-loris-pace-caracterisation-et-modelisation-de-composants-gan-pour-la-conception-des-convertisseurs-statiques-haute-frequence","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/actualites\/soutenance-de-these-loris-pace-caracterisation-et-modelisation-de-composants-gan-pour-la-conception-des-convertisseurs-statiques-haute-frequence.html","title":{"rendered":"Soutenance de th\u00e8se : Loris PACE, Caract\u00e9risation et mod\u00e9lisation de composants GaN pour la conception des convertisseurs statiques haute fr\u00e9quence"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_125sl02ocydx7\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-38284'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-k38lwplm-6c07b63bc19374ecf2df3ca6a476ea24\">\n#top .av-special-heading.av-k38lwplm-6c07b63bc19374ecf2df3ca6a476ea24{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-k38lwplm-6c07b63bc19374ecf2df3ca6a476ea24 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-k38lwplm-6c07b63bc19374ecf2df3ca6a476ea24 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-k38lwplm-6c07b63bc19374ecf2df3ca6a476ea24 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : Caract\u00e9risation et mod\u00e9lisation de composants GaN pour la conception des convertisseurs statiques haute fr\u00e9quence<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<h5><strong style=\"font-size: 16px;\">Loris PACE<\/strong><\/h5>\n<p><strong>Lundi 25 novembre 2019 \u00e0 10h00<br \/>\n<\/strong>Amphith\u00e9\u00e2tre ATRIUM, B\u00e2timent ESPRIT , Cit\u00e9 Scientifique\u00a0 Villeneuve d&rsquo;Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury:<\/span><\/strong><\/h5>\n<ul>\n<li>Nadir\u00a0IDIR, Professeur des Universit\u00e9s,\u00a0Laboratoire L2EP (Directeur de th\u00e8se)<\/li>\n<li>Jean-Christophe\u00a0NALLATAMBY,\u00a0Professeur des Universit\u00e9s,\u00a0Laboratoire XLIM (Rapporteur)<\/li>\n<li>Nathalie\u00a0BATUT,\u00a0Ma\u00eetre de Conf\u00e9rences,\u00a0Polytech Tours D\u00e9partement \u00c9lectronique et Energie (Rapporteur)<\/li>\n<li>Zoubir\u00a0KHATIR,\u00a0Directeur de Recherche,\u00a0IFSTTAR (Examinateur)<\/li>\n<li>Marina\u00a0DENG,\u00a0Ma\u00eetre de Conf\u00e9rences,\u00a0Laboratoire IMS (Examinateur)<\/li>\n<li>Jean-Claude\u00a0DE JAEGER,\u00a0Professeur des Universit\u00e9s,\u00a0IEMN (Co Directeur de th\u00e8se)<\/li>\n<li>Nicolas\u00a0DEFRANCE,\u00a0Ma\u00eetre de Conf\u00e9rences,\u00a0IEMN (Examinateur)<\/li>\n<li>Arnaud\u00a0VIDET,\u00a0Ma\u00eetre de Conf\u00e9rences,\u00a0Laboratoire L2EP (Examinateur)<\/li>\n<\/ul>\n<h5>Summary:<\/h5>\n<p>La mont\u00e9e en fr\u00e9quence de commutation des transistors de puissance \u00e0 base de Nitrure de Gallium (GaN) pr\u00e9sente une avanc\u00e9e technologique conduisant \u00e0 la r\u00e9duction de la taille, du poids et du volume des syst\u00e8mes de conversion de l\u2019\u00e9nergie. En effet, les propri\u00e9t\u00e9s physiques des transistors de type HEMT bas\u00e9s sur l\u2019h\u00e9t\u00e9rostructure AlGaN\/GaN pr\u00e9sentent un fort potentiel pour le d\u00e9veloppement de convertisseurs statiques haute fr\u00e9quence. Avec l\u2019augmentation toujours croissante de la part de l\u2019\u00e9lectronique de puissance dans les syst\u00e8mes \u00e9lectriques actuels, cette fili\u00e8re technologique, associ\u00e9e \u00e0 la fili\u00e8re du Carbure de Silicium (SiC), vise aujourd\u2019hui \u00e0 remplacer les composants de puissance \u00e0 base de Silicium (Si) notamment pour des raisons de tension de claquage \u00e9lev\u00e9e, de robustesse vis-\u00e0-vis des conditions s\u00e9v\u00e8res de fonctionnement et d\u2019int\u00e9gration de puissance.<\/p>\n<p>La conception optimale des convertisseurs haute fr\u00e9quence implique une connaissance pr\u00e9cise du fonctionnement des composants de puissance au sein de ces syst\u00e8mes. Ainsi, la conception de ces dispositifs repose sur des \u00e9tapes d\u2019analyse et de simulations men\u00e9es \u00e0 partir des mod\u00e8les des semi-conducteurs de puissance et des \u00e9l\u00e9ments environnants. L\u2019objectif de ce travail de th\u00e8se est de proposer une m\u00e9thodologie de mod\u00e9lisation comportementale de transistors de puissance GaN en boitier bas\u00e9e exclusivement sur des m\u00e9thodes de caract\u00e9risation non-intrusives.<\/p>\n<p>Les techniques de caract\u00e9risation \u00e9lectriques utilis\u00e9es pour la mod\u00e9lisation de transistors fonctionnant en gammes radiofr\u00e9quences, telles que la mesure des param\u00e8tres S ou les mesures courant\/tension en r\u00e9gime puls\u00e9, sont ici adapt\u00e9es \u00e0 la caract\u00e9risation du transistor de puissance GaN encapsul\u00e9. A partir des r\u00e9sultats de caract\u00e9risation, les diff\u00e9rents \u00e9l\u00e9ments lin\u00e9aires et non lin\u00e9aires du mod\u00e8le \u00e9lectrique du transistor sont obtenus et un mod\u00e8le \u00e9lectrique complet rassemblant ces \u00e9l\u00e9ments est impl\u00e9ment\u00e9 dans le logiciel de simulation ADS. Un banc de test Double Pulse est alors con\u00e7u afin de mettre en application le mod\u00e8le \u00e9lectrique d\u00e9velopp\u00e9. Apr\u00e8s mod\u00e9lisation de l\u2019environnement du transistor, y compris du circuit imprim\u00e9, les r\u00e9sultats de simulation des formes d\u2019onde de commutation sont confront\u00e9s aux r\u00e9sultats exp\u00e9rimentaux.<\/p>\n<p>Afin de tenir compte des effets de la temp\u00e9rature sur le fonctionnement du transistor, une m\u00e9thodologie est propos\u00e9e permettant d\u2019obtenir le mod\u00e8le thermique du composant \u00e0 partir de mesures de puissance dissip\u00e9e et d\u2019une proc\u00e9dure d\u2019optimisation. \u00c0 partir du mod\u00e8le obtenu, un convertisseur DC\/DC utilisant le transistor GaN mod\u00e9lis\u00e9 a \u00e9t\u00e9 con\u00e7u et r\u00e9alis\u00e9. Les r\u00e9sultats de simulation des formes d\u2019onde de commutation sont confront\u00e9s aux r\u00e9sultats exp\u00e9rimentaux pour diff\u00e9rentes temp\u00e9ratures de fonctionnement du transistor et une pr\u00e9diction du fonctionnement en continu du convertisseur est r\u00e9alis\u00e9e.<\/p>\n<h5>Abstract:<\/h5>\n<p>The high frequency operation of GaN power transistors is of great interest in order to reduce size, weight and volume of power converters. Indeed, GaN HEMT power transistors show very good physical properties for the development of high frequency power converters. Within the constant rise of the amount of power electronics in electrical systems, the GaN technology, associated with the Silicon Carbide (SiC) one, aims to replace the Silicium (Si) power devices especially in terms of robustness in harsh conditions and of power integration.<br \/>\nThe optimal design of high frequency power converters involves an accurate knowledge of power devices operations in the systems. Therefore, before the fabrication of converters, simulations steps based on semi-conductor and surrounding elements models are required. This research work focuses on the development of a modeling methodology of packaged GaN power transistors, exclusively based on non-intrusive characterization techniques.<\/p>\n<p>In this work, electrical characterization techniques used for radiofrequency transistors modeling, such as S-parameters and pulsed current\/voltage measurements, are adapted to characterize the packaged GaN power transistor. Based on the characterization results, linear and nonlinear elements of the transistor\u2019s electrical equivalent circuit are determined and a complet electrical model of the device is implemented in the ADS software. A Double Pulse test bench is made in order to apply the developed electrical model. After having modeled the whole test bench, including the printed circuit board, simulation results of the switching waveforms are compared to experimental results.<\/p>\n<p>Considering the effects of transistor\u2019s temperature on its operation in power converters, a methodology is proposed to extract the thermal model of the device using dissipated power measurements and an optimization procedure. The obtained thermal circuit and its influence of thermal-dependent elements are added to the previous electrical model in order to build the complete electro-thermal model of the GaN power transistor. Based on the developed model, a DC to DC converter using the studied transistor has been designed and fabricated. Then, the simulation results are compared to experimental results for several operating temperatures and a prediction of the continuous operation of the converter is achieved.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":38253,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[8],"tags":[],"class_list":["post-38284","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/38284","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=38284"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/38284\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/38253"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=38284"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=38284"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=38284"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}