{"id":38278,"date":"2019-11-20T16:04:00","date_gmt":"2019-11-20T14:04:00","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=38278"},"modified":"2019-11-26T15:19:35","modified_gmt":"2019-11-26T13:19:35","slug":"soutenance-de-these-alexandre-bucamp","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/actualites\/soutenance-de-these-alexandre-bucamp.html","title":{"rendered":"Soutenance de th\u00e8se : Alexandre BUCAMP, Croissance s\u00e9lective et caract\u00e9risation de nanostructures de mat\u00e9riaux III-V \u00e9labor\u00e9es par \u00e9pitaxie par jets mol\u00e9culaires"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_phovul14gfrj\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-38278'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-k37cz700-fa38bb0a19c6cad9eab3125a9dc700a6\">\n#top .av-special-heading.av-k37cz700-fa38bb0a19c6cad9eab3125a9dc700a6{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-k37cz700-fa38bb0a19c6cad9eab3125a9dc700a6 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-k37cz700-fa38bb0a19c6cad9eab3125a9dc700a6 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-k37cz700-fa38bb0a19c6cad9eab3125a9dc700a6 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE :Croissance s\u00e9lective et caract\u00e9risation de nanostructures de mat\u00e9riaux III-V \u00e9labor\u00e9es par \u00e9pitaxie par jets mol\u00e9culaires<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<h5><strong style=\"font-size: 16px;\">Alexandre BUCAMP<\/strong><\/h5>\n<p><strong>Vendredi 22 novembre 2019 \u00e0 10h30<br \/>\n<\/strong>Amphitheatre of the IEMN-Laboratoire central - Villeneuve d'Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury:<\/span><\/strong><\/h5>\n<ul>\n<li>Ludovic\u00a0DESPLANQUE,\u00a0Ma\u00eetre de Conf\u00e9rences,\u00a0Universit\u00e9 de Lille (Directeur de th\u00e8se)<\/li>\n<li>Laurent\u00a0CERUTTI,\u00a0Ma\u00eetre de Conf\u00e9rences,\u00a0Universit\u00e9 de Montpellier (Rapporteur)<\/li>\n<li>Bassem\u00a0SALEM,\u00a0Charg\u00e9 de Recherche CNRS (Rapporteur)<\/li>\n<li>Chantal\u00a0FONTAINE, Directeur de Recherche CNRS (Examinateur)<\/li>\n<li>Sylvain\u00a0BOLLAERT,\u00a0Professeur des Universit\u00e9s,\u00a0Universit\u00e9 de Lille (Examinateur)<\/li>\n<li>Xavier\u00a0WALLART,\u00a0Directeur de Recherche CNRS (Co Directeur de th\u00e8se)<\/li>\n<\/ul>\n<h5>Summary:<\/h5>\n<p>Que ce soit pour la fabrication de transistors ultimes fonctionnant \u00e0 haute fr\u00e9quence et faible consommation d\u2019\u00e9nergie ou pour celle de composants quantiques exploitant le transport balistique d\u2019\u00e9lectrons, l\u2019\u00e9laboration de nanostructures de semiconducteurs III-V \u00e0 faible masse effective \u00e9lectronique est aujourd\u2019hui un enjeu majeur. Diff\u00e9rentes approches existent pour atteindre des dimensions caract\u00e9ristiques largement sub-100nm. Les nanostructures peuvent \u00eatre d\u00e9finies par une approche descendante en combinant gravure s\u00e8che anisotrope et amincissement chimique digital d\u2019une couche semiconductrice ou par une approche ascendante en \u00e9laborant directement les nanostructures d\u00e9sir\u00e9es. Dans le deuxi\u00e8me cas, la croissance de nanofils catalys\u00e9e par une bille m\u00e9tallique nanom\u00e9trique a connu un engouement important ces quinze derni\u00e8res ann\u00e9es. La fabrication de composants utilisant ce proc\u00e9d\u00e9 reste cependant tr\u00e8s compliqu\u00e9e et n\u00e9cessite souvent le report des nanofils sur un substrat h\u00f4te rendant extr\u00eamement difficile la r\u00e9alisation de circuits complexes. L\u2019approche par croissance s\u00e9lective dans les ouvertures d\u2019un masque di\u00e9lectrique offre au contraire des perspectives plus int\u00e9ressantes. Si l\u2019\u00e9pitaxie \u00e0 base d\u2019organom\u00e9talliques en phase vapeur a d\u00e9montr\u00e9 son efficacit\u00e9 pour ce type de croissance, l\u2019\u00e9pitaxie par jets mol\u00e9culaires peut permettre d\u2019am\u00e9liorer encore la puret\u00e9 des nanostructures. C\u2019est dans ce contexte que nous avons \u00e9tudi\u00e9 les propri\u00e9t\u00e9s \u00e9lectriques de nanostructures III-V \u00e9pitaxi\u00e9es s\u00e9lectivement sur substrat InP. L\u2019utilisation d\u2019un flux d\u2019hydrog\u00e8ne atomique pendant la croissance permet d\u2019obtenir une bonne s\u00e9lectivit\u00e9 de croissance. Son impact sur les propri\u00e9t\u00e9s optiques et \u00e9lectriques du semiconducteur a d\u2019abord \u00e9t\u00e9 \u00e9tudi\u00e9 puis l\u2019utilisation de proc\u00e9d\u00e9s de nanofabrication a permis l\u2019\u00e9laboration et la caract\u00e9risation \u00e9lectrique de nanostructures. Des composants en InGaAs de type TLM, multi-branches ou MOSFET ont d\u00e9montr\u00e9 la qualit\u00e9 des mat\u00e9riaux \u00e9pitaxi\u00e9s puisque des mobilit\u00e9s effectives \u00e0 l\u2019\u00e9tat de l\u2019art pour ce type de mat\u00e9riau ont \u00e9t\u00e9 obtenues. Gr\u00e2ce \u00e0 l\u2019utilisation de croissance s\u00e9lectives multiples, nous avons pu \u00e9laborer des h\u00e9t\u00e9rostructures originales telles que des nanofils planaires \u00e0 c\u0153ur InGaAs et coquille InP ou des h\u00e9t\u00e9rojonctions InGaAs\/GaSb radiales ou axiales. Pour ces derni\u00e8res, l\u2019obtention de caract\u00e9ristiques courant-tension pr\u00e9sentant une r\u00e9sistance diff\u00e9rentielle n\u00e9gative montre une bonne qualit\u00e9 d\u2019interface, offrant des perspectives int\u00e9ressantes pour la fabrication de nano-h\u00e9t\u00e9rojonction tunnel.<\/p>\n<h5>Abstract:<\/h5>\n<p>The fabrication of nanoscale devices such as high frequency and low energy consumption transistors or quantum devices exploiting ballistic electrons transport requires the development of nanostructures with low effective mass III-V materials. Several technologies exist to reach typical dimensions well below the 100-nm range. The nanostructures can be defined by a top-down approach through a combination of anisotropic dry etching and digital chemical thinning of a semiconductor layer, or by a bottom-up approach with a direct elaboration of the nanostructures. In the second case, metal-catalyst-assisted nanowire growth has been widespread since the last fifteen years. However, the fabrication of devices based on this process is still tricky and often requires the transfer of the nanowires to a host substrate for device processing, preventing any complex circuit production. The approach by selective area growth inside dielectric mask openings exhibits a better scalability. If the organometallic vapor phase epitaxy (MOVPE) has proved its efficiency for this type of growth, molecular beam epitaxy (MBE) may further improve the nanostructure purity. Within this context, we study the electrical properties of selectively grown III-V materials on InP substrate by MBE. We demonstrate that the use, an atomic hydrogen flux during the growth ensures a good selectivity with respect to the dielectric mask and has a positive impact on the optical and electrical properties of the grown semiconductor. The electrical characterization of InGaAs nanostructures is performed thanks to the development of dedicated process such as TLM, branched nanowires or MOSFET devices. It reveals good transport properties with the state-of-the-art effective mobility for this kind of alloy. We then show that selective area epitaxy is also a valuable tool to develop original heterostructures such as in-plane InGaAs\/InP core-shell nanowires with raised contacts and radial or axial InGaAs\/GaSb heterojunctions. For these latter, the negative differential resistance observed on the current-voltage characteristics demonstrates a good interface quality, offering interesting possibilities for tunnel nano-heterojunction development.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":38282,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[8],"tags":[],"class_list":["post-38278","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/38278","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=38278"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/38278\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/38282"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=38278"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=38278"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=38278"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}