{"id":38002,"date":"2019-10-03T11:49:09","date_gmt":"2019-10-03T09:49:09","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=38002"},"modified":"2019-10-16T11:44:53","modified_gmt":"2019-10-16T09:44:53","slug":"ingenierie-de-substrat-par-micro-usinage-laser-pour-lamelioration-des-performances-de-composants-et-fonctions-rf-integrees-en-technologie-soi-cmos","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/actualites\/ingenierie-de-substrat-par-micro-usinage-laser-pour-lamelioration-des-performances-de-composants-et-fonctions-rf-integrees-en-technologie-soi-cmos.html","title":{"rendered":"Soutenance de th\u00e8se : Arun BHASKAR, Ing\u00e9nierie de substrat par micro-usinage laser pour l\u2019am\u00e9lioration des performances de composants et fonctions RF int\u00e9gr\u00e9es en technologie SOI-CMOS"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_heading  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_58_100q80kpdaloc\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg\" class=\"ls-bg\" alt=\"\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1.jpg 2600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2019\/01\/sliders_news1-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;width:180px;height:30px;left:0px;top:231px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-quote-right\" style=\"color:#ffffff;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>ACTUALITES<\/ls-layer><\/div><\/div><\/div><div id='after_layer_slider_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-38002'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-k1ahy78g-007eebaa3a7f28874c4a59af2ee1b982\">\n#top .av-special-heading.av-k1ahy78g-007eebaa3a7f28874c4a59af2ee1b982{\nmargin:0 0 10px 0;\npadding-bottom:4px;\n}\nbody .av-special-heading.av-k1ahy78g-007eebaa3a7f28874c4a59af2ee1b982 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-k1ahy78g-007eebaa3a7f28874c4a59af2ee1b982 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-k1ahy78g-007eebaa3a7f28874c4a59af2ee1b982 av-special-heading-h2  avia-builder-el-1  el_after_av_layerslider  el_before_av_hr  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >THESE : Substrate engineering using laser micromachining for improvement of RF devices and systems integrated in SOI-CMOS technology <\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-18u73nj-dad6a947580930e400fc42ba200e80f1\">\n#top .hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1{\nmargin-top:5px;\nmargin-bottom:5px;\n}\n.hr.av-18u73nj-dad6a947580930e400fc42ba200e80f1 .hr-inner{\nwidth:100%;\n}\n<\/style>\n<div  class='hr av-18u73nj-dad6a947580930e400fc42ba200e80f1 hr-custom  avia-builder-el-2  el_after_av_heading  el_before_av_textblock  hr-left hr-icon-no'><span class='hr-inner inner-border-av-border-thin'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<section  class='av_textblock_section av-jriy64i8-2f4600354c0449b610997916bbd9b6bc'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" >\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-13ewzjw-68e036126b913e5028f77311dc66b825\">\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825{\ncolor:#bfbfbf;\nborder-color:#bfbfbf;\n}\n.av_font_icon.av-13ewzjw-68e036126b913e5028f77311dc66b825 .av-icon-char{\nfont-size:60px;\nline-height:60px;\n}\n<\/style>\n<span  class='av_font_icon av-13ewzjw-68e036126b913e5028f77311dc66b825 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue8c9' data-av_iconfont='entypo-fontello' ><\/span><\/span>\n<h5><strong style=\"font-size: 16px;\">Arun BHASKAR<\/strong><\/h5>\n<p><strong>Lundi 07 octobre 2019 &#8211; 10h30<br \/>\n<\/strong>Amphitheatre of the IEMN-Laboratoire central - Villeneuve d'Ascq<\/p>\n<\/div><\/section>\n<section  class='av_textblock_section av-jtefqx33-628129dba2299b2ecd65ebfc92eac29d'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock'  itemprop=\"text\" ><div  class='hr av-kjh3zw-4dff888f744b728a1aca9b3a0971493a hr-default  avia-builder-el-6  avia-builder-el-no-sibling'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div>\n<h5><strong><span style=\"color: #800000;\">Jury:<\/span><\/strong><\/h5>\n<ul>\n<li>\n<p style=\"margin-bottom: .0001pt; line-height: normal;\">Emmanuel DUBOIS, Directeur de Recherche, Universit\u00e9 de Lille, Directeur de th\u00e8se<\/p>\n<\/li>\n<li>\n<p style=\"margin-bottom: .0001pt; line-height: normal;\">Christophe GAQUIERE, Professeur des Universit\u00e9s, Universit\u00e9 de Lille, Co Directeur de th\u00e8se<\/p>\n<\/li>\n<li>\n<p style=\"margin-bottom: .0001pt; line-height: normal;\">Olivier UTEZA, Directeur de Recherche, Universit\u00e9 d\u2019Aix Marseille, Examinateur<\/p>\n<\/li>\n<li>\n<p style=\"margin-bottom: .0001pt; line-height: normal;\">Christine RAYNAUD, Strategic Marketing Manager RF Technologies, CEA-LETI, Examinateur<\/p>\n<\/li>\n<li>\n<p style=\"margin-bottom: .0001pt; line-height: normal;\">Daniel GLORIA, Ing\u00e9nieur de Recherche, ST Microelectronics, Examinateur<\/p>\n<\/li>\n<li>\n<p style=\"margin-bottom: .0001pt; line-height: normal;\">Jean-Fran\u00e7ois ROBILLARD, Professeur assistant ,Universit\u00e9 de Lille, Examinateur<\/p>\n<\/li>\n<li>\n<p style=\"margin-bottom: .0001pt; line-height: normal;\">Florence GARRELIE, Professeur des Universit\u00e9s, Universit\u00e9 Jean Monnet, Rapporteur<\/p>\n<\/li>\n<li>\n<p style=\"margin-bottom: .0001pt; line-height: normal;\">Pierre BLONDY, Professeur des Universit\u00e9s,Universit\u00e9 de Limoges, XLIM,Rapporteur<\/p>\n<\/li>\n<\/ul>\n<h5>Summary:<\/h5>\n<p>Dans l&rsquo;industrie des semi-conducteurs, l&rsquo;approche More-than-Moore constitue un facteur cl\u00e9 pour am\u00e9liorer les performances du syst\u00e8me, l&rsquo;int\u00e9gration et la diversification des applications. Dans le domaine des syst\u00e8mes RF\/hyperfr\u00e9quences, il est essentiel de d\u00e9velopper des fonctionnalit\u00e9s optimis\u00e9es pour diverses exigences comme la lin\u00e9arit\u00e9, les pertes, la sensibilit\u00e9, etc. Bien que la technologie silicium-sur-isolant (SOI) offre des solutions concurrentielles pour le march\u00e9 des radiofr\u00e9quences et des hyperfr\u00e9quences, il a \u00e9t\u00e9 d\u00e9montr\u00e9 dans des \u00e9tudes ant\u00e9rieures que l&rsquo;ing\u00e9nierie des substrats SOI permet d&rsquo;am\u00e9liorer encore les performances. Dans ce contexte, l&rsquo;objet sp\u00e9cifique de ce travail de th\u00e8se a \u00e9t\u00e9 d&rsquo;\u00e9tudier le traitement des substrats porteurs de tranches SOI (Silicium-sur-Isolant). L&rsquo;objectif a consist\u00e9 \u00e0 enlever le substrat de silicium sous la zone active des fonctions RF pour obtenir des membranes SOI menant \u00e0 des pertes RF r\u00e9duites et une am\u00e9lioration de la lin\u00e9arit\u00e9. Nous avons donc d\u00e9velopp\u00e9 le proc\u00e9d\u00e9 de micro-usinage et de gravure assist\u00e9e par laser femtoseconde FLAME (Femtosecond Laser Assisted Micromachining and Etch) pour suspendre en membrane les fonctions RF int\u00e9gr\u00e9es sur un substrat SOI. Un taux d&rsquo;ablation sp\u00e9cifique \u00e9lev\u00e9 de 8,5 x 106 \u00b5m3 s-1 a \u00e9t\u00e9 obtenu pour produire des membranes dont la surface varie de quelques centaines de \u00b5m2 \u00e0 plusieurs mm2. La caract\u00e9risation RF a \u00e9t\u00e9 r\u00e9alis\u00e9e sur diff\u00e9rentes fonctions RF suspendues : commutateurs, inductances et amplificateurs \u00e0 faible bruit (LNA). Une comparaison avec des substrats SOI \u00e0 haute r\u00e9sistivit\u00e9 montre des performances sup\u00e9rieures pour les fonctions RF int\u00e9gr\u00e9es en membranes. Pour le commutateur, les mesures de distorsion harmonique ont montr\u00e9 une am\u00e9lioration de 23 dB et 6 dB des secondes et troisi\u00e8mes harmoniques, respectivement. Des mesures en r\u00e9gime petit signal d&rsquo;inductance sur membranes ont r\u00e9v\u00e9l\u00e9 un quasi-doublement du facteur de qualit\u00e9 Q jusqu&rsquo;\u00e0 3,2 nH. L&rsquo;\u00e9limination du substrat de l&rsquo;inductance d&rsquo;adaptation d&rsquo;entr\u00e9e des LNA entraine une r\u00e9duction du facteur de bruit de ~0,1 dB. Ces r\u00e9sultats mettent en \u00e9vidence le potentiel important que constitue l\u2019ing\u00e9nierie des substrats pour l&rsquo;am\u00e9lioration des performances RF des technologies CMOS. De plus, pour les besoins d&rsquo;analyse en boucle courte, la m\u00e9thode FLAME permet de quantifier tr\u00e8s rapidement l&rsquo;influence du substrat sur les pertes et la lin\u00e9arit\u00e9 sans avoir recours \u00e0 des techniques d\u2019\u00e9limination compl\u00e8te. Un autre avantage distinctif de cette m\u00e9thode est la possibilit\u00e9 de quantifier l&rsquo;effet du substrat sur un circuit complet en suspendant un composant sp\u00e9cifique sans affecter les autres. Les m\u00e9thodes de fabrication d\u00e9velopp\u00e9es sont \u00e9galement applicables aux capteurs en technologie SOI, ce qui apporte une valeur ajout\u00e9e globale en ligne avec le paradigme More-than-Moore.<\/p>\n<h5>Abstract:<\/h5>\n<p>In semiconductor industry, the More-than-Moore approach is a key enabler for enhanced system performance, better integration and improved diversity of applications. Within the focus area of RF\/microwave systems, it is essential to develop different functionalities which are optimized for various requirements like linearity, losses, sensitivity etc. While Silicon-on-Insulator (SOI) technology offers competitive solutions for RF\/microwave market, it has been demonstrated in previous studies that SOI substrate engineering results in further performance gains. In this context, the specific goal of our work is the investigation of substrate processing of SOI RF functions using femtosecond laser ablation. The objective is to remove silicon handler substrate under the active area of the RF functions to obtain SOI membranes which have reduced RF losses and improved linearity. In this work, we have developed the Femtosecond Laser Assisted Micromachining and Etch (FLAME) process to suspend RF functions integrated on a SOI substrate. A high specific ablation rate of 8.5 x 106 \u00b5m3 s-1 has been achieved to produce membranes with a surface area ranging from few hundreds \u00b5m2 to several mm2. RF characterization has been performed on different suspended RF functions: switches, inductors and low noise amplifiers (LNA). A comparison with high-resistivity SOI substrates shows superior performance of RF functions integrated in suspended membranes. For the SP9T switch, harmonic distortion measurements showed an improvement of 23 dB and 6 dB of the second and third harmonic, respectively. Small signal measurements of inductors on membranes revealed a near doubling of the quality factor of inductors up to 3.2 nH. Substrate removal of input matching inductor on LNA resulted in reduction of noise figure by ~0.1 dB. These results highlight the great potential for use of substrate processing for improvement of RF performance in CMOS technology. In addition, for short loop analysis needs, the FLAME method allows to quantify the influence of the substrate on losses and linearity very quickly without the need for total substrate removal. Another distinctive advantage of this methodology is the ability to quantify the substrate effect on a full circuit by suspending a specific component while keeping other components unaffected. The developed fabrication methods are equally usable for sensor applications on SOI technology, which provides an overall added value in line with the More-than-Moore paradigm.<\/p>\n<\/div><\/section>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":38004,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[8],"tags":[],"class_list":["post-38002","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/38002","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=38002"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/38002\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/38004"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=38002"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=38002"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=38002"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}