{"id":3404,"date":"2012-12-05T09:00:52","date_gmt":"2012-12-05T07:00:52","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=3404"},"modified":"2013-04-09T08:15:31","modified_gmt":"2013-04-09T06:15:31","slug":"new-orientation-for-gallium-nitride-on-silicon-transistors","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/news\/new-orientation-for-gallium-nitride-on-silicon-transistors.html","title":{"rendered":"New orientation for gallium nitride on silicon transistors"},"content":{"rendered":"<p>The first millimeter-wave power demonstration of aluminium gallium nitride\/gallium nitride (AlGaN\/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a\u00a0 French team of researchers [A. Soltani et al, IEEE Electron Device Letters,\u00a0 published online 7 March 2013]. The team consists of workers from Institut d\u2019Electronique, de Micro\u00e9lectronique et de Nanotechnologie (IEMN) and Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications (CRHEA).<\/p>\n<p style=\"text-align: center;\"><span style=\"color: #ffffff;\">__<\/span><\/p>\n<p style=\"text-align: center;\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2013\/04\/Structure_of_AlGaNGaN.jpg\"><img loading=\"lazy\" decoding=\"async\" title=\"Structure_of_AlGaNGaN\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2013\/04\/Structure_of_AlGaNGaN.jpg\" alt=\"\" width=\"500\" height=\"326\" \/><\/a><em><\/em><\/p>\n<p style=\"text-align: center;\"><em>Fig.1: Structure of the AlGaN\/GaN HEMT on (110) oriented silicon substrate.<\/em><\/p>\n<p style=\"text-align: center;\"><span style=\"color: #ffffff;\">__<\/span><\/p>\n<p style=\"text-align: center;\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2013\/04\/photo_sem.jpg\"><img loading=\"lazy\" decoding=\"async\" title=\"photo_sem\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2013\/04\/photo_sem.jpg\" alt=\"\" width=\"500\" height=\"120\" \/><\/a><\/p>\n<p style=\"text-align: center;\"><span style=\"color: #ffffff;\">__<\/span><\/p>\n<p style=\"text-align: center;\"><em>Fig.2: SEM picture of the T-shaped 60 nm gate length fabricated with the nitride-gate technology<\/em><\/p>\n<p><span style=\"color: #ffffff;\">\u00a0__<\/span><\/p>\n<p><a href=\"http:\/\/www.semiconductor-today.com\/news_items\/2013\/MAR\/IEMN_210313.html\" target=\"_blank\">http:\/\/www.semiconductor-today.com\/news_items\/2013\/MAR\/IEMN_210313.html<\/a><\/p>\n<p><em><strong>Author(s):<\/strong> <strong>Soltani, A. <\/strong><\/em><br \/>\n<em> Institute of Electronics, Microelectronics and Nanotechnology, Centre National de Recherche Scientifique (IEMN\/CNRS), Villeneuve d\u2019Ascq, France <\/em><br \/>\n<em> Gerbedoen, J.-C.; Cordier, Y.; Ducatteau, D.; Rousseau, M.; Chmielowska, M.; Ramdani, M.; De Jaeger, J.-C.<\/em><\/p>\n<p>&nbsp;<\/p>","protected":false},"excerpt":{"rendered":"<p>The first millimeter-wave power demonstration of aluminium gallium nitride\/gallium nitride (AlGaN\/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a\u00a0 French team of researchers [A. Soltani et al, IEEE Electron Device Letters,\u00a0 published online 7 March 2013]. The team consists of workers from Institut d\u2019Electronique, de Micro\u00e9lectronique et de Nanotechnologie [&hellip;]<\/p>","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[12],"tags":[],"class_list":["post-3404","post","type-post","status-publish","format-standard","hentry","category-news"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/3404","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=3404"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/3404\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=3404"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=3404"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=3404"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}