{"id":3399,"date":"2012-12-04T13:41:12","date_gmt":"2012-12-04T11:41:12","guid":{"rendered":"https:\/\/www.iemn.fr\/?p=3399"},"modified":"2013-05-31T11:58:11","modified_gmt":"2013-05-31T09:58:11","slug":"la-premiere-demonstration-de-la-fabrication-de-transistors-de-puissance-en-onde-millimetrique-de-type-hemt-algangan-sur-substrat-silicium-110","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/actualites\/la-premiere-demonstration-de-la-fabrication-de-transistors-de-puissance-en-onde-millimetrique-de-type-hemt-algangan-sur-substrat-silicium-110.html","title":{"rendered":"La premi\u00e8re d\u00e9monstration de la fabrication de transistors de puissance en onde millim\u00e9trique de type HEMT AlGaN\/GaN sur substrat silicium (110)"},"content":{"rendered":"<p><strong>La premi\u00e8re d\u00e9monstration de la fabrication de transistors de puissance en onde millim\u00e9trique de type HEMT AlGaN\/GaN sur substrat silicium (110) hautement r\u00e9sistif a \u00e9t\u00e9 r\u00e9alis\u00e9e \u00e0 l\u2019IEMN en collaboration avec le CRHEA [A. SOLTANI et <em>al<\/em>., IEEE Electron Device Letters, publi\u00e9 en ligne le 7mars 2013].<\/strong><\/p>\n<p>Usuellement, ces h\u00e9t\u00e9rostructures sont obtenus par \u00e9pitaxie par jet mol\u00e9culaire sur substrat silicium orient\u00e9 (111). Cependant la croissance des phases wurtzite AlN\/GaN semble plus favorable sur silicium orient\u00e9 (110) et permet d\u2019obtenir des couches libres de craquelures et une qualit\u00e9 mat\u00e9riau am\u00e9lior\u00e9e.<\/p>\n<p>L\u2019\u00e9pitaxie pr\u00e9sente d\u2019excellentes caract\u00e9ristiques de transport \u00e9lectronique avec une r\u00e9sistance carr\u00e9e de 245 W\/\u00ff, une mobilit\u00e9 de 2045 cm<sup>2<\/sup>\/V.s et une densit\u00e9 de porteurs dans le puits de 1.21\u00b410<sup>13<\/sup> cm<sup>-2<\/sup>. Des transistors ayant une longueur de grille de 60nm et un recess de grille de 10nm ont d\u00e9montr\u00e9 les potentialit\u00e9s de ces structures pour un fonctionnement en bande Ka avec une densit\u00e9 de puissance hyperfr\u00e9quence de 3.3W\/mm associ\u00e9e \u00e0 un rendement en puissance ajout\u00e9 de 20.1% et un gain en puissance de 10.6dB \u00e0 40GHz. Ces transistors pr\u00e9sentent un courant drain-source de 1.55A\/mm et une transconductance maximale de 476mS\/mm.<\/p>\n<p style=\"text-align: center;\"><span style=\"color: #ffffff;\">__<\/span><\/p>\n<p style=\"text-align: center;\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2013\/04\/Structure_of_AlGaNGaN.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter size-full wp-image-3453\" title=\"Structure_of_AlGaNGaN\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2013\/04\/Structure_of_AlGaNGaN.jpg\" alt=\"\" width=\"500\" height=\"326\" \/><\/a><em><\/em><\/p>\n<p style=\"text-align: center;\"><em>Fig.1: Structure of the AlGaN\/GaN HEMT on (110) oriented silicon substrate.<\/em><\/p>\n<p style=\"text-align: center;\"><span style=\"color: #ffffff;\">__<\/span><\/p>\n<p style=\"text-align: center;\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2013\/04\/photo_sem.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter  wp-image-3459\" title=\"photo_sem\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2013\/04\/photo_sem.jpg\" alt=\"\" width=\"500\" height=\"120\" \/><\/a><span style=\"color: #ffffff;\">__<\/span><\/p>\n<p style=\"text-align: center;\"><em>Fig.2: SEM picture of the T-shaped 60 nm gate length fabricated with the nitride-gate technology<\/em><\/p>\n<p style=\"text-align: center;\">\u00a0<span style=\"color: #ffffff;\">__<\/span><\/p>\n<p style=\"text-align: left;\"><a href=\"http:\/\/www.semiconductor-today.com\/news_items\/2013\/MAR\/IEMN_210313.html\" target=\"_blank\">http:\/\/www.semiconductor-today.com\/news_items\/2013\/MAR\/IEMN_210313.html<\/a><\/p>\n<p style=\"text-align: left;\"><em><strong>Author(s):<\/strong> <strong>Soltani, A. <\/strong><\/em><br \/>\n<em> Institut d\u2019Electronique, de Micro\u00e9lectronique et de Nanotechnologie, Centre National de Recherche Scientifique (IEMN\/CNRS), Villeneuve d\u2019Ascq, France <\/em><br \/>\n<em> Gerbedoen, J.-C.; Cordier, Y.; Ducatteau, D.; Rousseau, M.; Chmielowska, M.; Ramdani, M.; De Jaeger, J.-C.<\/em><\/p>\n<p style=\"text-align: left;\">","protected":false},"excerpt":{"rendered":"<p>The first demonstration of the fabrication of millimetre-wave power transistors of the HEMT AlGaN\/GaN type on highly resistive silicon (110) substrate was carried out at the IEMN in collaboration with the CRHEA [A. SOLTANI et al, IEEE Electron Device Letters, published online on 7March 2013]. Typically, these heterostructures are obtained by epitaxy [...].<\/p>","protected":false},"author":2,"featured_media":0,"comment_status":"closed","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[8],"tags":[28],"class_list":["post-3399","post","type-post","status-publish","format-standard","hentry","category-actualites","tag-iemn-nanotechnologie-transistors-hemt"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/3399","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=3399"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/3399\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=3399"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=3399"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=3399"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}