{"id":12811,"date":"2017-02-12T11:29:09","date_gmt":"2017-02-12T09:29:09","guid":{"rendered":"https:\/\/www.iemn.fr\/last-news\/seminaire-nanostructured-gan-devices-for-power-applications-and-beyond-2.html"},"modified":"2019-09-06T10:22:18","modified_gmt":"2019-09-06T08:22:18","slug":"seminaire-nanostructured-gan-devices-for-power-applications-and-beyond","status":"publish","type":"post","link":"https:\/\/www.iemn.fr\/en\/news\/seminaire-nanostructured-gan-devices-for-power-applications-and-beyond.html","title":{"rendered":"S\u00e9minaire : Nanostructured GaN devices for power applications and beyond \u2013 Pr. Elison Matioli"},"content":{"rendered":"

Dans le cadre du th\u00e8me GaN, l\u2019IEMN accueille :
\n<\/span><\/p>\n

Lundi 27 Mars 2017 \u2013 IEMN LCI Villeneuve d\u2019Ascq, Salle du conseil \u2013 10:30<\/strong>
\nNanostructured GaN devices for power applications and beyond<\/span><\/strong>
\nElison Matioli, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL)<\/em><\/span><\/p><\/blockquote>\n

\"\"<\/a>In this talk, I will present some of the nanowire-based technologies developed in our group to significantly enhance the performance of high-voltage GaN power devices, such as Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs). This presentation will cover high-performance AlGaN\/GaN HEMTs on silicon substrate based on nanowire tri-gate architectures. The optimized tri-gate geometry led to reduced off-state leakage current (Ioff<\/sub>) and sub-threshold slope (SS), increased on\/off ratio, and improved breakdown voltage (Vbr<\/sub>) of the device. With a gate-to-drain separation (LGD<\/sub>) of 15 \u03bcm, hard Vbr<\/sub> up to 1755 V at Ioff<\/sub> of 45 \u03bcA\/mm with high soft Vbr<\/sub> of 1370 V at Ioff<\/sub> = 1 \u03bcA\/mm were achieved, rendering an excellent high-power figure of merit (FOM) up to 1.25 GW\/cm2<\/sup>.<\/span><\/p>\n

These nanowire-based technologies were also applied for AlGaN\/GaN SBDs on silicon substrates. An optimized hybrid of tri-anode and tri-gate architectures led to SBDs exhibiting high Vbr<\/sub>, low reverse leakage current (IR<\/sub>), and small turn-on voltage (VON<\/sub>) of 0.76 \u00b1 0.05 V since the tri-anode architecture formed a direct Schottky contact to the 2D electron gas (2DEG). The reverse characteristics were controlled electrostatically by an embedded tri-gate transistor, instead of relying only on the Schottky barrier, which resulted in low IR<\/sub> below 10 nA\/mm at large reverse biases up to 500 V. In addition, these devices exhibited record Vbr<\/sub> up to 1325 V at IR <\/sub>of 1 \u03bcA\/mm, rendering an excellent high-power FOM of 939 MW\/cm2<\/sup>. These results unveil the significant potential of nanostructured GaN transistors for future power applications.<\/span><\/p>\n

Finally, I will discuss the application of these nanostructures to better understand the electron transport in GaN-based heterostructures, which was exploited to demonstrate new ballistic devices operating at room temperature. The fast transport of ballistic electrons could offer a pathway for future room-temperature high-frequency ballistic devices.<\/span><\/p>\n

Biography: <\/strong>Elison Matioli is an assistant professor in the institute of electrical engineering at Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne<\/em> (EPFL). He received a B.Sc. degree in applied physics and applied mathematics from Ecole Polytechnique<\/em> (Palaiseau, France) in 2006 and a Ph.D. degree from the Materials Department at the University of California, Santa Barbara <\/em>(UCSB) in 2010. He was a post-doctoral fellow in the Department of Electrical Engineering and Computer Science at the Massachusetts Institute of Technology <\/em>(MIT) until 2014. <\/em>His expertise is in semiconductor and nanostructure growth by metal-organic chemical vapor deposition (MOCVD), device fabrication and development of advanced numerical models to simulate device properties. He has received the Outstanding Graduate Student \u2013 Scientific Achievement Award <\/em>for his Ph.D. thesis, the IEEE Electron Devices Society George Smith Award<\/em> for his demonstration of high-efficiency nanostructured power electronic devices and the ERC Starting Grant in 2015<\/em>.<\/p>\n

 <\/p>","protected":false},"excerpt":{"rendered":"

As part of the GaN theme, IEMN hosts: Monday 27 March 2017 - IEMN LCI Villeneuve d'Ascq, Salle du conseil - 10:30 Nanostructured GaN devices for power applications and beyond Elison Matioli, Ecole Polytechnique F\u00e9d\u00e9rale de Lausanne (EPFL) In this talk, I will present some of the nanowire-based technologies developed in our group to [...].<\/p>","protected":false},"author":2,"featured_media":23287,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[12],"tags":[],"class_list":["post-12811","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/12811","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=12811"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/posts\/12811\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media\/23287"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=12811"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/categories?post=12811"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/tags?post=12811"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}