{"id":49383,"date":"2022-01-06T17:15:44","date_gmt":"2022-01-06T15:15:44","guid":{"rendered":"https:\/\/www.iemn.fr\/?page_id=49383"},"modified":"2025-01-25T12:46:24","modified_gmt":"2025-01-25T10:46:24","slug":"projects","status":"publish","type":"page","link":"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-wind\/projects","title":{"rendered":"Projects"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_submenu  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_59_fl4o2gtw9j3v\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2560\" height=\"266\" 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srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/slider_wind3-scaled.jpg 2560w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/slider_wind3-300x31.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/slider_wind3-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/slider_wind3-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/slider_wind3-1536x160.jpg 1536w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/slider_wind3-2048x213.jpg 2048w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/slider_wind3-18x2.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/slider_wind3-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/slider_wind3-705x73.jpg 705w\" sizes=\"auto, (max-width: 2560px) 100vw, 2560px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;border-style:solid;border-color:#000;background-position:0% 0%;background-repeat:no-repeat;mix-blend-mode:normal;top:231px;left:0px;height:30px;width:300px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-user-circle\" style=\"color:#f2f2f2;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>GROUPE DE RECHERCHE : WIND<\/ls-layer><\/div><\/div><\/div>\n<div class='clear'><\/div><div id='sub_menu1'  class='av-submenu-container av-ky4gnwwq-8adae6a023918213dfd9fcc43b9712b3 footer_color  avia-builder-el-1  el_after_av_layerslider  el_before_av_heading  av-sticky-submenu submenu-not-first container_wrap sidebar_right' style='z-index:301' ><div class='container av-menu-mobile-disabled av-submenu-pos-center'><ul id='av-custom-submenu-1' class='av-subnav-menu' role='menu'>\n<li class='menu-item av-3nxzfgn-de5ccb0a5195d3d83843b292b8f79e6f menu-item-top-level menu-item-top-level-1' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-wind'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Introduction<\/span><\/a><\/li>\n<li class='menu-item av-343h4dj-d33cc2fa7a03ec7b00d7e9661be63836 menu-item-top-level menu-item-top-level-2' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-wind\/wind-members'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Members<\/span><\/a><\/li>\n<li class='menu-item av-2qd9747-176de4ac784557e2d4e2142aa9f3a1ac menu-item-top-level menu-item-top-level-3' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-wind\/news'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>News<\/span><\/a><\/li>\n<li class='menu-item av-267wstj-a151d4dab85356b40291e20204cf17de menu-item-top-level menu-item-top-level-4' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-wind\/projects'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Projects<\/span><\/a><\/li>\n<li class='menu-item av-1or7207-53be1fddd6384e802f7f27f49748a5cf menu-item-top-level menu-item-top-level-5' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-wind\/facilities'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Faclities<\/span><\/a><\/li>\n<li class='menu-item av-1kl1j8n-0c1683712dbc4be643f769c364380dbc menu-item-top-level menu-item-top-level-6' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-wind\/job-opening'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Job opening<\/span><\/a><\/li>\n<li class='menu-item av-6f5j53-e76287a92a659c2e08dc623b6f62fdaa menu-item-top-level menu-item-top-level-7' role='menuitem'><a href=''  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Contact Us<\/span><\/a><\/li>\n<\/ul><\/div><\/div><div class='sticky_placeholder'><\/div><div id='after_submenu_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-49383'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-ldwzlnlm-40b98dcb663f07c2fbd70464c2d3e0c3\">\n#top .av-special-heading.av-ldwzlnlm-40b98dcb663f07c2fbd70464c2d3e0c3{\npadding-bottom:10px;\n}\nbody .av-special-heading.av-ldwzlnlm-40b98dcb663f07c2fbd70464c2d3e0c3 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-ldwzlnlm-40b98dcb663f07c2fbd70464c2d3e0c3 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-ldwzlnlm-40b98dcb663f07c2fbd70464c2d3e0c3 av-special-heading-h3  avia-builder-el-2  el_after_av_submenu  el_before_av_toggle_container  avia-builder-el-first'><h3 class='av-special-heading-tag'  itemprop=\"headline\"  >Current Projects<\/h3><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n<div  class='togglecontainer av-m6c2b2ma-9876f71cf61b834110fea0dc0a40a971 av-elegant-toggle  avia-builder-el-3  el_after_av_heading  el_before_av_heading  toggle_close_all' >\n<section class='av_toggle_section av-m6c2adgw-88c3ca1ec2d1bbe5584643b1c1c3e4cd'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-1' data-fake-id='#toggle-id-1' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-1' data-slide-speed=\"200\" data-title=\"AGAMI_EURIGAMI (EUROPEAN DEFENCE FUND)\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: AGAMI_EURIGAMI (EUROPEAN DEFENCE FUND)\" data-aria_expanded=\"Click to collapse: AGAMI_EURIGAMI (EUROPEAN DEFENCE FUND)\">AGAMI_EURIGAMI (EUROPEAN DEFENCE FUND)<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-1' aria-labelledby='toggle-toggle-id-1' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span>AGAMI_EURIGAMI :<\/u><br \/>\n<\/strong><strong>European Innovative GaN Advanced Microwave Integration - European project EDF (EUROPEAN DEFENCE FUND)<\/strong><\/p>\n<ul>\n<li><strong><span style=\"color: #800000\">IEMN Project Sponsor:<\/span> F. Medjdoub<\/strong><\/li>\n<li><strong><strong><span style=\"color: #800000\">Coordinator:<\/span>\u00a0UMS\u00a0<\/strong>GmbH<\/strong><\/li>\n<li><strong><span style=\"color: #800000\">Partners:<\/span> Fraunhofer IAF, Fraunhofer IZM, UMS SAS, CEA LETI, 3-5 Lab, University of Roma Tor Vergata, MC2, University of Vigo, Universidad Polit\u00e9cnica de Madrid, University Zagreb, SOITEC, SweGaN, Sencio, IMT Bucharest, Slovak Academy of Science (SAV), Chalmers University, FORTH, Leonardo, Synergie CAD, Hensoldt, Indra, MEC, Thales NL, Thales DMS, University of Roma La Sapienza, BPTI, Saab, University Padova, Circuit Integrated Ltd., Airbus-Spain, National Research Council, CNRS-IEMN, TNO, Elettronica<\/strong><\/li>\n<\/ul>\n<p style=\"text-align: center\"><strong><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel2-1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-54626 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel2-1.jpg\" alt=\"\" width=\"800\" height=\"304\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel2-1.jpg 800w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel2-1-300x114.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel2-1-768x292.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel2-1-18x7.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel2-1-705x268.jpg 705w\" sizes=\"auto, (max-width: 800px) 100vw, 800px\" \/><\/a><\/strong><\/p>\n<p>The project \u201cEuropean Innovative GaN Advanced Microwave Integration\u201d (AGAMI_EURIGAMI) covers the complete supply chain for Gallium Nitride (GaN) starting from epitaxy up to the component packaging and integration in modern electronic defence systems. The project focusses on the improvement of the technology and of the resilience against electrical and environmental threats. The final GaN components and devices will demonstrate an improved performance and protection of the devices in harsh environments.<\/p>\n<p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1\">\n.av_font_icon.av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1 .av-icon-char{\nfont-size:20px;\nline-height:20px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue885' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/u><span style=\"color: #800000\">The main technological or characterization means that will be necessary to carry out the project:<\/span><\/strong><\/p>\n<ul>\n<li style=\"font-weight: 400\">CNMF\u00a0: Centrale de micro et nano fabrication<\/li>\n<li style=\"font-weight: 400\">Plateforme CHOP\u00a0: caract\u00e9risation DC, puls\u00e9e, RF, non-lin\u00e9aire (Load-pull)<\/li>\n<\/ul>\n<p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1\">\n.av_font_icon.av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1 .av-icon-char{\nfont-size:20px;\nline-height:20px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue885' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/u><span style=\"color: #800000\">Flagship projects concerned:<\/span><\/strong><\/p>\n<ul>\n<li style=\"font-weight: 400\">Telecom UHD<\/li>\n<li style=\"font-weight: 400\">Micro-nano-devices<\/li>\n<\/ul>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_3.jpg\">\u00a0<\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-m6c2aqj5-13eb51faeebda4223bb2fe247ff486fd'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-2' data-fake-id='#toggle-id-2' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-2' data-slide-speed=\"200\" data-title=\"ACTION (ANR PRCE)\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: ACTION (ANR PRCE)\" data-aria_expanded=\"Click to collapse: ACTION (ANR PRCE)\">ACTION (ANR PRCE)<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-2' aria-labelledby='toggle-toggle-id-2' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span>ACTION<\/u>\u00a0:<br \/>\n<\/strong><strong>Novel AlGaN channel transistors for high voltage applications<\/strong><\/p>\n<ul>\n<li><strong><span style=\"color: #800000\">IEMN Project Sponsor:<\/span> F. Medjdoub<\/strong><\/li>\n<li><strong><span style=\"color: #800000\">Coordinator:<\/span> IEMN<br \/>\n<\/strong><\/li>\n<li><strong><span style=\"color: #800000\">Partners:<\/span> Institut N\u00e9el, soci\u00e9t\u00e9 EasyGaN, laboratoire CRHEA<\/strong><\/li>\n<\/ul>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel1-1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-54620 size-full aligncenter\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel1-1.jpg\" alt=\"\" width=\"1000\" height=\"282\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel1-1.jpg 1000w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel1-1-300x85.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel1-1-768x217.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel1-1-18x5.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/09\/visuel1-1-705x199.jpg 705w\" sizes=\"auto, (max-width: 1000px) 100vw, 1000px\" \/><\/a><\/p>\n<ul>\n<li>The ACTION project aims to explore and develop a new breed of transistors using an ultra-wide bandgap AlGaN channel. This PRCE project is made up of three academic laboratories, CRHEA, IEMN and the N\u00e9el Institute, and the startup EasyGaN as the industrial partner.<\/li>\n<li>These AlGaN transistors will make it possible to lay the foundations for a future generation of power components that will offer higher operation voltage and temperature stability beyond the limits of GaN. The targeted performances will compete with contemporary SiC-based transistors. Thanks to the increased efficiency at high voltage operation (1200V), currently inaccessible to GaN-on-Silicon transistors, these components will reduce the losses that occur during the multiple transformations of electrical energy from its production to our daily use. The key point of the project is the development by molecular beam epitaxy (MBE) of AlGaN\/AlGaN heterostructures on large diameter silicon substrates. These novel and CMOS compatible semiconductors will strengthen the current efforts of the main French players in the field. In the context of decarbonization and therefore a massive electrification, the ACTION project will play an important and strategic role in the creation of a new generation of semiconductor components improving energy management.<\/li>\n<li>This project is based on remarkable preliminary results since a breakdown field greater than 2.5 MV\/cm has already been measured on extremely simple AlGaN channel HEMT structures. This breakdown field value is already beyond the state of the art of GaN-on-silicon HEMTs, which is typically around 1.5 MV\/cm. These promising results confirm the interest of this approach, especially since these extremely simple structures (without strain engineering or defect density reduction) have been epitaxially grown on a silicon substrate. The ACTION project aims to develop AlGaN channel HEMT structures optimized in terms of defects and strain engineering on large diameter silicon substrates based on the unique CRHEA know-how of more than 20 years of MBE epitaxy. Part of this know-how has been already transferred to the startup EasyGaN. In particular, a patent which makes it possible to reduce the density of dislocations in the AlGaN alloy has been licensed to EasyGaN. Another key point of the ACTION project is the optimization of the different processing steps and the realization of the device. The team of Farid Medjdoub (IEMN) is at the state of the art in this field. Their expertise will make it possible to optimize the performance of the structures grown in the project. Julien Pernot's team (Institut N\u00e9el), recognized as a leader in the field of ultra-wide-gap materials, will provide an in-depth study of the properties of the AlGaN. In particular, the team will provide expertise on the electron transport properties which are the core of the project. All things considered, the ACTION project will enable EasyGaN to add a high value and strategic product to its catalogue.<\/li>\n<li>The partnership offers perfect complementarity by bringing unique know-how to carry out this ambitious project aimed at innovative power components. The project will also benefit from the expertise of external partners such as: - the company Knowmade specialized in patent analysis and consulting in technology watch and intellectual property strategy, - the University of Padua for dynamic measurements, - the University of Bristol for thermal analyzes and, - the SME Riber for developments and technical support around MBE growth on 8\" substrates.<\/li>\n<\/ul>\n<p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1\">\n.av_font_icon.av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1 .av-icon-char{\nfont-size:20px;\nline-height:20px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue885' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/u><span style=\"color: #800000\">The main technological or characterization means that will be necessary to carry out the project:<\/span><\/strong><\/p>\n<ul>\n<li style=\"font-weight: 400\">CNMF\u00a0: Centrale de micro et nano fabrication<\/li>\n<li style=\"font-weight: 400\">Plateforme CHOP\u00a0: caract\u00e9risation DC, puls\u00e9e, haute tension<\/li>\n<\/ul>\n<p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1\">\n.av_font_icon.av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1 .av-icon-char{\nfont-size:20px;\nline-height:20px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-d43de6004d5edc90354a4c3e1df77cb1 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue885' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/u><span style=\"color: #800000\">Flagship projects concerned:<\/span><\/strong><\/p>\n<ul>\n<li style=\"font-weight: 400\">Transportation<\/li>\n<li style=\"font-weight: 400\">Smart energy<\/li>\n<li style=\"font-weight: 400\">Micro-nano-devices<\/li>\n<\/ul>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-d6e6d6f02261f85cbdc1da97dbd5fec1'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-3' data-fake-id='#toggle-id-3' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-3' data-slide-speed=\"200\" data-title=\"LABEX GANEXT\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: LABEX GANEXT\" data-aria_expanded=\"Click to collapse: LABEX GANEXT\">LABEX GANEXT<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-3' aria-labelledby='toggle-toggle-id-3' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span> LABEX GANEXT : <\/u><\/strong><\/p>\n<p><strong>Duration: 2020 \u2013 2025<\/strong><br \/>\n<strong>Coordinator of RF and power electronics: Farid Medjdoub<\/strong><\/p>\n<p><strong><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignleft wp-image-49388 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_1.jpg\" alt=\"\" width=\"400\" height=\"372\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_1.jpg 400w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_1-300x279.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_1-13x12.jpg 13w\" sizes=\"auto, (max-width: 400px) 100vw, 400px\" \/><\/a>Objectives:<\/strong><\/p>\n<p>GANEXT is a French national network including industrials and academics working on nitrides materials and devices.<br \/>\nA funding close to 4 M\u20ac for 4 years has been granted by the ministry of research.<br \/>\nMain part of the activities are focusing on power and RF electronics. Funded projects aim at significantly supporting the roadmap of French industrials in this frame.<\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-1b491f2fe42a4a497b33f8373ae6b504'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-4' data-fake-id='#toggle-id-4' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-4' data-slide-speed=\"200\" data-title=\"DGA\/CNRS contract GREAT \" data-title-open=\"\" data-aria_collapsed=\"Click to expand: DGA\/CNRS contract GREAT \" data-aria_expanded=\"Click to collapse: DGA\/CNRS contract GREAT \">DGA\/CNRS contract GREAT <span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-4' aria-labelledby='toggle-toggle-id-4' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/u>DGA\/CNRS contract GREAT :<br \/>\n<\/strong><strong>High frequency GaN electronics<\/strong><\/p>\n<p><strong>Duration: 2021 \u2013 2025<br \/>\n<\/strong><strong>Coordinator : Farid Medjdoub<\/strong><\/p>\n<p>As a strategic technology, GREAT has ben jointly funded by DGA and CNRS to improve millimeter-wave GaN transistors for future radar systems.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_2.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignleft wp-image-49391 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_2.jpg\" alt=\"\" width=\"400\" height=\"267\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_2.jpg 400w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_2-300x200.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_2-18x12.jpg 18w\" sizes=\"auto, (max-width: 400px) 100vw, 400px\" \/><\/a><strong>Objectives:<\/strong><\/p>\n<p>\u2022Develop a robust GaN technology (TRL 4) up to W-band<br \/>\n\u2022Support the optimization of UMS next generation of GaN transistors (GH10)<br \/>\n\u2022Understand the parasitic phenomena and related device degradation under high electric field of ultrashort GaN transistors<br \/>\n\u2022Analytical physical modelling and simulation of devices and circuits<br \/>\n\u2022Ka-band circuit design to validate benefit of the developed technology at the circuit level<\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-f6340aa78a67474831a28da0781bd82e'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-5' data-fake-id='#toggle-id-5' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-5' data-slide-speed=\"200\" data-title=\"Contract PEPR ELETRONIQUE VERTIGO\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: Contract PEPR ELETRONIQUE VERTIGO\" data-aria_expanded=\"Click to collapse: Contract PEPR ELETRONIQUE VERTIGO\">Contract PEPR ELETRONIQUE VERTIGO<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-5' aria-labelledby='toggle-toggle-id-5' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span> <\/u><u><b>Contract PEPR ELETRONIQUE VERTIGO <\/b><\/u><br \/>\n<\/strong><strong><span style=\"color: #ff0000\">VERTI<\/span>cal <span style=\"color: #ff0000\">G<\/span>an for high v<span style=\"color: #ff0000\">O<\/span>ltage<br \/>\n<\/strong><\/p>\n<p><strong>Duration: 2022 \u2013 2026<\/strong><\/p>\n<p><strong>Coordinator : Cyril Buttay<\/strong><\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/02\/wind-p.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignleft wp-image-56152 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/02\/wind-p.jpg\" alt=\"\" width=\"854\" height=\"442\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/02\/wind-p.jpg 854w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/02\/wind-p-300x155.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/02\/wind-p-768x397.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/02\/wind-p-18x9.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2023\/02\/wind-p-705x365.jpg 705w\" sizes=\"auto, (max-width: 854px) 100vw, 854px\" \/><\/a><\/p>\n<p><strong>Objectives<\/strong><\/p>\n<p>The proposed VERTIGO project aims to develop AlGaN nitride power transistors with a vertical geometry. Today\u2019s technology for GaN power transistors is based on lateral HEMT where the voltage rise is obtained by increasing the space between the gate and the drain, to the detriment of the current and power density. In addition, these lateral-architecture components are necessarily sensitive to surface phenomena.The vertical geometry makes it possible to gain in current density, and the rise in voltage (the project targets 1200 V, with chips of a caliber of 50 A) is obtained with thicker layers. Finally, the increase in frequency is allowed by the important mobilities that the project will target by working on the conduction channel and exploiting all the possibilities offered by heterostructures. The project aims to reach a large increase (x10) in electronic mobility compared to current published results in the field.<\/p>\n<p>Adequacy with the national Electronics plan:<\/p>\n<p>VERTIGO aims to provide vertical power components in silicon GaN that offer the performance required by the industry, especially automotive. It relies on French research actors from the material to the system. In particular, the high voltage GaN is identified by automotive manufacturers as necessary to accompany the rise in voltage of on-board networks beyond 400 V (800 V targeted by several manufacturers), because it should make it possible to produce components at a lower cost than SiC technology.<\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-d26089f5f4eb99b43ca20968480a6e10'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-6' data-fake-id='#toggle-id-6' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-6' data-slide-speed=\"200\" data-title=\"Industrial project SmartGaN\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: Industrial project SmartGaN\" data-aria_expanded=\"Click to collapse: Industrial project SmartGaN\">Industrial project SmartGaN<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-6' aria-labelledby='toggle-toggle-id-6' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p>The objective of this project is the study of vertical and lateral GaN power components produced on the so-called \u00ab\u00a0SmartGaN for Power\u00a0\u00bb substrate currently being developed at Soitec.<br \/>\nThe principle of such a substrate is the transfer of a thin layer of monocrystalline GaN material (&lt; 1 \u00b5m) onto a substrate called \u201cbase\u201d via a bonding process. This bonding process may itself require a so-called \u201cbonding layer\u201d with electrical and thermal properties different from those of the base and the GaN layer.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1.png\"><img loading=\"lazy\" decoding=\"async\" class=\"size-full wp-image-68258 alignnone\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1.png\" alt=\"\" width=\"266\" height=\"134\" \/><\/a><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1.png\"><img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-68263 aligncenter\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-300x81.png\" alt=\"\" width=\"300\" height=\"81\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-300x81.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1030x278.png 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-768x207.png 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1536x414.png 1536w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-2048x553.png 2048w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-18x5.png 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1500x405.png 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-705x190.png 705w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-9f4312f7804a29a138cba398d315a302'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-7' data-fake-id='#toggle-id-7' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-7' data-slide-speed=\"200\" data-title=\"PEPR GOTEN\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: PEPR GOTEN\" data-aria_expanded=\"Click to collapse: PEPR GOTEN\">PEPR GOTEN<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-7' aria-labelledby='toggle-toggle-id-7' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p>OBJECTIVE<br \/>\nPushing the limits of power electronics by means of Gallium oxide, the next generation power semiconductor<\/p>\n<p>CHALLENGE<br \/>\nDemonstrate the viability of a French technology of vertical components based on gallium oxide (Ga2O3), covering the entire value chain ranging from epitaxial growth to thermal management of packaged components.<\/p>\n<p style=\"text-align: center\">\u00a0 \u00a0 \u00a0 <a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1.png\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-medium wp-image-68266\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1-300x130.png\" alt=\"\" width=\"300\" height=\"130\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1-300x130.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1-1030x445.png 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1-768x332.png 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1-1536x664.png 1536w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1-2048x885.png 2048w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1-18x8.png 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1-1500x648.png 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Picture1-1-705x305.png 705w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-w4jkp3-e51ef031e320ef33e46ff7d5e38c968c\">\n#top .av-special-heading.av-w4jkp3-e51ef031e320ef33e46ff7d5e38c968c{\npadding-bottom:10px;\n}\nbody .av-special-heading.av-w4jkp3-e51ef031e320ef33e46ff7d5e38c968c .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-w4jkp3-e51ef031e320ef33e46ff7d5e38c968c .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-w4jkp3-e51ef031e320ef33e46ff7d5e38c968c av-special-heading-h3  avia-builder-el-13  el_after_av_toggle_container  el_before_av_toggle_container'><h3 class='av-special-heading-tag'  itemprop=\"headline\"  >Completed Projects<\/h3><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n<div  class='togglecontainer av-m6c29sou-de01982843988fed58bfd0078549da19 av-elegant-toggle  avia-builder-el-14  el_after_av_heading  avia-builder-el-last  toggle_close_all' >\n<section class='av_toggle_section av-m6c27wcx-b7557ca8f6944b1f786b9ad9d2c95448'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-8' data-fake-id='#toggle-id-8' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-8' data-slide-speed=\"200\" data-title=\"EU ECSEL YesVGaN European Contract (Horizon 2020)\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: EU ECSEL YesVGaN European Contract (Horizon 2020)\" data-aria_expanded=\"Click to collapse: EU ECSEL YesVGaN European Contract (Horizon 2020)\">EU ECSEL YesVGaN European Contract (Horizon 2020)<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-8' aria-labelledby='toggle-toggle-id-8' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/u>Contract EU ECSEL YesVGaN :<br \/>\n<\/strong><strong>Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost<\/strong><\/p>\n<p><strong>Duration: 2021 \u2013 2025<br \/>\n<\/strong><strong>Responsible for IEMN: Farid Medjdoub<\/strong><\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_3.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49393 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_3.jpg\" alt=\"\" width=\"700\" height=\"407\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_3.jpg 700w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_3-300x174.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_3-18x10.jpg 18w\" sizes=\"auto, (max-width: 700px) 100vw, 700px\" \/><\/a><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_4.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49394 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_4.jpg\" alt=\"\" width=\"700\" height=\"401\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_4.jpg 700w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_4-300x172.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_4-18x10.jpg 18w\" sizes=\"auto, (max-width: 700px) 100vw, 700px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-c9c2f715e3b5c2fceed521172a98d5e7'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-9' data-fake-id='#toggle-id-9' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-9' data-slide-speed=\"200\" data-title=\"ESA European Contract (European Space Agency)\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: ESA European Contract (European Space Agency)\" data-aria_expanded=\"Click to collapse: ESA European Contract (European Space Agency)\">ESA European Contract (European Space Agency)<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-9' aria-labelledby='toggle-toggle-id-9' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/u>ESA European Contract (European Space Agency)<\/strong><\/p>\n<p><strong>Duration: 2022<\/strong><br \/>\n<strong>Coordinator : Farid Medjdoub<\/strong><\/p>\n<p><strong>Objectives:<\/strong><\/p>\n<p>The proposed work aims to assess and quantify performances of new materials and device topologies of mmW GaN-based transistors allowing frequency extension up to W-band with the aim of achieving new stretch targets, especially in terms of ways to improve both power-added-efficiency and linearity. The novelty lies on an extensive survey of advanced concepts studied worldwide with respect to the whole figure of merits while including theoretical investigations of the most promising concepts based on TCAD simulations and checking the manufacturability of each approach with main EU epi-suppliers and foundries. The outputs from this study will allow ESA to focus its future GaN process development efforts to help enable a European supply chain for state of art mmW GaN MMIC technology.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_20.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49509 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_20.jpg\" alt=\"\" width=\"1000\" height=\"269\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_20.jpg 1000w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_20-300x81.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_20-768x207.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_20-18x5.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_20-705x190.jpg 705w\" sizes=\"auto, (max-width: 1000px) 100vw, 1000px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-a67c27bc4422e6b6cfab6720b006c5ce'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-10' data-fake-id='#toggle-id-10' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-10' data-slide-speed=\"200\" data-title=\"Contract ANR DGA (ASTRID) CROCUS\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: Contract ANR DGA (ASTRID) CROCUS\" data-aria_expanded=\"Click to collapse: Contract ANR DGA (ASTRID) CROCUS\">Contract ANR DGA (ASTRID) CROCUS<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-10' aria-labelledby='toggle-toggle-id-10' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span>Contract ANR DGA (ASTRID) CROCUS :<br \/>\n<\/u>Circuits for robust Communication system in the millimeter wave range based on GaN-on-Si substrate<\/strong><\/p>\n<p><strong>Duration: 2014 \u2013 2017<\/strong><br \/>\n<strong>Responsible for IEMN: Farid Medjdoub<\/strong><\/p>\n<p><strong><u>Objectives:<\/u><\/strong><\/p>\n<p>This project proposes to design, realize in hybrid integration and test some key Ka band circuits such as power amplifier (HPA), Low noise amplifier (LNA) and mixer, using EpiGaN epitaxies. These circuits will be developed with respect to Thales communication (military communication systems) and BLUWAN specifications (Civilian LMDS &amp; Satellite applications).<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_5.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49408 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_5.jpg\" alt=\"\" width=\"951\" height=\"483\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_5.jpg 951w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_5-300x152.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_5-768x390.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_5-18x9.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_5-705x358.jpg 705w\" sizes=\"auto, (max-width: 951px) 100vw, 951px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-6097b0c62c31382e90e2b34a317d4881'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-11' data-fake-id='#toggle-id-11' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-11' data-slide-speed=\"200\" data-title=\"Contract ANR DGA (ASTRID) COMPACT\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: Contract ANR DGA (ASTRID) COMPACT\" data-aria_expanded=\"Click to collapse: Contract ANR DGA (ASTRID) COMPACT\">Contract ANR DGA (ASTRID) COMPACT<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-11' aria-labelledby='toggle-toggle-id-11' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span>Contract ANR DGA (ASTRID) COMPACT :<br \/>\n<\/u>Understanding and optimization of trapping effects in the frame of the development of next generation of power devices for Ka band applications<\/strong><\/p>\n<p><strong>Duration: 2018 \u2013 2021<\/strong><br \/>\n<strong>Responsible for IEMN: Farid Medjdoub<\/strong><\/p>\n<p><strong><u>Objectives:<\/u><\/strong><\/p>\n<p>This project aims to solve inherent GaN technology issues related to electron trapping effects and thus optimizing key figures of merits such as power-added-efficiency and associated output power for transistors with sub-150 nm gate lengths.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_6.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49410 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_6.jpg\" alt=\"\" width=\"1024\" height=\"458\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_6.jpg 1024w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_6-300x134.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_6-768x344.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_6-18x8.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_6-705x315.jpg 705w\" sizes=\"auto, (max-width: 1024px) 100vw, 1024px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-17acfad06a7ce0eefe6975678393fd50'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-12' data-fake-id='#toggle-id-12' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-12' data-slide-speed=\"200\" data-title=\"Contract ANR LHOM \" data-title-open=\"\" data-aria_collapsed=\"Click to expand: Contract ANR LHOM \" data-aria_expanded=\"Click to collapse: Contract ANR LHOM \">Contract ANR LHOM <span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-12' aria-labelledby='toggle-toggle-id-12' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span>Contract ANR LHOM:<br \/>\n<\/u>AlInN Layers and AlInN Heterostructures for Optimized high electron Mobility transistors<\/strong><\/p>\n<p><strong>Duration: 2014 \u2013 2017<\/strong><br \/>\n<strong>Responsible for IEMN: Farid Medjdoub<\/strong><\/p>\n<p><strong><u>Objectives:<\/u><\/strong><\/p>\n<p>The LHOM research effort establishes a strongly iterative methodology for sustaining the production of the next generation AlInN based high frequency high mobility electron transistors (HEMTs). In this project, three public institutions and a private company are to carry out an extensive investigation extending from the optimization of the growth of the layers and heterostructures to the fabrication and performance validation of the HEMTs for high power millimeter-wave range applications.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_7-1.png\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49415 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_7-1.png\" alt=\"\" width=\"769\" height=\"506\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_7-1.png 769w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_7-1-300x197.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_7-1-18x12.png 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_7-1-705x464.png 705w\" sizes=\"auto, (max-width: 769px) 100vw, 769px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-1255e8eea5ed9df6e40021279b361fee'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-13' data-fake-id='#toggle-id-13' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-13' data-slide-speed=\"200\" data-title=\"Contract ANR BREAkuP\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: Contract ANR BREAkuP\" data-aria_expanded=\"Click to collapse: Contract ANR BREAkuP\">Contract ANR BREAkuP<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-13' aria-labelledby='toggle-toggle-id-13' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span>Contract ANR <\/u><u>BREAkuP<\/u><u>:<br \/>\n<\/u>Ultra-wide Bandgaps for futuRE high power electronic ApPlications<\/strong><\/p>\n<p><strong>Duration: 2018 \u2013 2021<\/strong><br \/>\n<strong>Coordinator : Farid Medjdoub<\/strong><\/p>\n<p><strong><u>Objectives:<\/u><\/strong><\/p>\n<p>To develop <strong>novel robust and reliable<\/strong> AlN-based power devices for high and medium power electronic systems targeting <strong>energy conversion efficiency as well as high frequency<\/strong> applications and bringing the Ultra-Wide-Bandgap semiconductors power devices another step towards the <strong>wide usability<\/strong> in the <strong>energy saving environment and next generation of millimeter-wave devices.<\/strong><\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_8.png\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49417 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_8.png\" alt=\"\" width=\"630\" height=\"291\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_8.png 630w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_8-300x139.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_8-18x8.png 18w\" sizes=\"auto, (max-width: 630px) 100vw, 630px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-c3e2cd93fb73688f4b9b0eb9f060b4a4'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-14' data-fake-id='#toggle-id-14' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-14' data-slide-speed=\"200\" data-title=\"Contract FUI VeGaN \" data-title-open=\"\" data-aria_collapsed=\"Click to expand: Contract FUI VeGaN \" data-aria_expanded=\"Click to collapse: Contract FUI VeGaN \">Contract FUI VeGaN <span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-14' aria-labelledby='toggle-toggle-id-14' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span>Contract FUI <\/u><u>VeGaN<\/u><u>:<br \/>\n<\/u>Very Efficient GaN Amplifiers for Networks<\/strong><\/p>\n<p><strong>Duration: 2015 \u2013 2019<\/strong><br \/>\n<strong>Responsible for IEMN: Farid Medjdoub<\/strong><\/p>\n<p><strong><u>Objectives:<\/u><\/strong><\/p>\n<p>The aim of VeGaN is to contribute to the technology development for high frequency applications and enable the competitiveness of the critical GaN device EU industry, which is key for future telecommunication wireless systems.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_9.png\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49419 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_9.png\" alt=\"\" width=\"600\" height=\"373\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_9.png 600w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_9-300x187.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_9-18x12.png 18w\" sizes=\"auto, (max-width: 600px) 100vw, 600px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-866fefa8d26d4e1fd244fc4104f4ae00'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-15' data-fake-id='#toggle-id-15' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-15' data-slide-speed=\"200\" data-title=\"Contract EU EDA (European Defense Agency) EUGANIC\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: Contract EU EDA (European Defense Agency) EUGANIC\" data-aria_expanded=\"Click to collapse: Contract EU EDA (European Defense Agency) EUGANIC\">Contract EU EDA (European Defense Agency) EUGANIC<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-15' aria-labelledby='toggle-toggle-id-15' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span>Contract EU EDA (European Defense Agency) EUGANIC:<br \/>\n<\/u>European GaN Integrated Circuits<\/strong><\/p>\n<p><strong>Duration: 2016 \u2013 2020<\/strong><br \/>\n<strong>Responsible for IEMN: Farid Medjdoub<\/strong><\/p>\n<p><strong><u>Objectives:<\/u><\/strong><\/p>\n<p>The main objective of the project is to close the European supply chain for military GaN-based electronics in order to secure the availability of GaN devices for strategic European defense projects. Therefore, European commercial suppliers of SiC substrates and state-of-the-art epitaxially grown wafers (epi-wafer) with HEMT (High Electron Mobility Transistor) layer structures suitable for microwave transistors and circuits shall be developed. With all these activities the project aims to create a leading-edge industrial supply chain for GaN-based electronics for the needs and applications of the European defense industry.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_10.png\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49421 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_10.png\" alt=\"\" width=\"1021\" height=\"522\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_10.png 1021w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_10-300x153.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_10-768x393.png 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_10-18x9.png 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_10-705x360.png 705w\" sizes=\"auto, (max-width: 1021px) 100vw, 1021px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-ae0b4b23ac7f4e542dc50f7d7c3a95f7'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-16' data-fake-id='#toggle-id-16' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-16' data-slide-speed=\"200\" data-title=\"Contract EU H2020 Inrel-NPower \" data-title-open=\"\" data-aria_collapsed=\"Click to expand: Contract EU H2020 Inrel-NPower \" data-aria_expanded=\"Click to collapse: Contract EU H2020 Inrel-NPower \">Contract EU H2020 Inrel-NPower <span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-16' aria-labelledby='toggle-toggle-id-16' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong><u>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span>Contract EU H2020 <\/u><u>Inrel-NPower<\/u><u>:<br \/>\n<\/u>Innovative Reliable Nitride based Power Devices and Applications<\/strong><\/p>\n<p><strong>Duration: 2017 \u2013 2020<\/strong><br \/>\n<strong>Responsible for IEMN: Farid Medjdoub<\/strong><\/p>\n<p><strong>The project has the following main objectives:<\/strong><\/p>\n<div class=\"O0\">1.Development of <strong>robust and reliable 650 V 10A<\/strong>, class GaN-on-Si devices for application in high efficiency power conversion;<\/div>\n<div class=\"O0\">2.Understanding <strong>degradation modes and physical mechanisms in GaN-on-Si devices<\/strong> to identify degradation processes, acceleration laws and activation energies, for device lifetime estimation;<\/div>\n<div class=\"O0\">3.Developing advanced GaN-on-Si device architectures (substrate removal) to drastically improve device performance and reliability with respect to current technologies<strong> (breakdown larger than 2kV, 100A current capability, on resistance (Ron) less than 10 m\u03a9);<\/strong><\/div>\n<div class=\"O0\">4.Explore new material systems ((Al)GaN-on-AlN) for devices with very low <strong>sheet resistance, Rsh&lt;300 \u03a9\/sq, very high breakdown&gt;2.5kV<\/strong> and proven reliability;<\/div>\n<div class=\"O0\">5.Advanced <strong>packaging with low parasitic inductance and, at least, 30% reduction of the thermal resistance,<\/strong> with beneficial effects on the system reliability;<\/div>\n<div class=\"O0\">6.Developing an <strong>industrial motor drive inverter<\/strong> (demonstrator) <strong>with 60 % less power losses, more than 30 % reduction in volume and 50% higher power density<\/strong> (if compared with the state of the art Si-based inverter)<\/div>\n<div><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_11.png\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49423 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_11.png\" alt=\"\" width=\"666\" height=\"321\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_11.png 666w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_11-300x145.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_11-18x9.png 18w\" sizes=\"auto, (max-width: 666px) 100vw, 666px\" \/><\/a><\/div>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-c3c0a132af244c22f9119f138da27a71'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-17' data-fake-id='#toggle-id-17' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-17' data-slide-speed=\"200\" data-title=\"Industrial (UMS) bilateral contract ALIEN \" data-title-open=\"\" data-aria_collapsed=\"Click to expand: Industrial (UMS) bilateral contract ALIEN \" data-aria_expanded=\"Click to collapse: Industrial (UMS) bilateral contract ALIEN \">Industrial (UMS) bilateral contract ALIEN <span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-17' aria-labelledby='toggle-toggle-id-17' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><u><strong>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06\">\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06{\ncolor:#800000;\nborder-color:#800000;\n}\n.av_font_icon.av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 .av-icon-char{\nfont-size:30px;\nline-height:30px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-2595d27a15bc8a542ca40dfe0f7bda06 avia_animate_when_visible av-icon-style- avia-icon-pos-left avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue881' data-av_iconfont='entypo-fontello' ><\/span><\/span>Industrial (UMS) bilateral contract ALIEN:<\/strong> <\/u><\/p>\n<p><strong>Duration: 2018 \u2013 2020<\/strong><br \/>\n<strong>Responsible for IEMN: Farid Medjdoub<\/strong><\/p>\n<p><strong><u>Objectives:<\/u><\/strong><\/p>\n<p>This project covers the evaluation of the AlN\/GaN by developing a preindustrial process shared between IEMN and the foundry UMS on 4-inch SiC substrate including the uniformity, device size and reliability issues.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_13.png\"><img loading=\"lazy\" decoding=\"async\" class=\"aligncenter wp-image-49428 size-full\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_13.png\" alt=\"\" width=\"1000\" height=\"339\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_13.png 1000w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_13-300x102.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_13-768x260.png 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_13-18x6.png 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/project_13-705x239.png 705w\" sizes=\"auto, (max-width: 1000px) 100vw, 1000px\" \/><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"parent":49282,"menu_order":20,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-49383","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/49383","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=49383"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/49383\/revisions"}],"up":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/49282"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=49383"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}