{"id":49191,"date":"2022-01-03T16:06:49","date_gmt":"2022-01-03T14:06:49","guid":{"rendered":"https:\/\/www.iemn.fr\/?page_id=49191"},"modified":"2022-02-03T18:54:50","modified_gmt":"2022-02-03T16:54:50","slug":"quentin-fornasiero","status":"publish","type":"page","link":"https:\/\/www.iemn.fr\/en\/quentin-fornasiero","title":{"rendered":"Quentin FORNASIERO"},"content":{"rendered":"<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_heading-ec7ec1c4aa7f9fd54293da65f68a7c5e\">\n#top .av-special-heading.av-av_heading-ec7ec1c4aa7f9fd54293da65f68a7c5e{\npadding-bottom:10px;\n}\nbody .av-special-heading.av-av_heading-ec7ec1c4aa7f9fd54293da65f68a7c5e .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-av_heading-ec7ec1c4aa7f9fd54293da65f68a7c5e .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-av_heading-ec7ec1c4aa7f9fd54293da65f68a7c5e av-special-heading-h3  avia-builder-el-0  el_before_av_one_full  avia-builder-el-first'><h3 class='av-special-heading-tag'  itemprop=\"headline\"  >Quentin FORNASIERO<\/h3><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-vepcw7-799a890a9306dfeded52f3275079cba3\">\n.flex_column.av-vepcw7-799a890a9306dfeded52f3275079cba3{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-vepcw7-799a890a9306dfeded52f3275079cba3 av_one_full  avia-builder-el-1  el_after_av_heading  avia-builder-el-last  first flex_column_div av-zero-column-padding'     ><p>\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-kxytbwwv-ce55fd67729314fa52b64e5d779bd19d\">\n#top .hr.hr-invisible.av-kxytbwwv-ce55fd67729314fa52b64e5d779bd19d{\nheight:1px;\n}\n<\/style>\n<div  class='hr av-kxytbwwv-ce55fd67729314fa52b64e5d779bd19d hr-invisible  avia-builder-el-2  el_before_av_textblock  avia-builder-el-first'><span class='hr-inner'><span class=\"hr-inner-style\"><\/span><\/span><\/div><br \/>\n<section  class='av_textblock_section av-kxyrb9tt-e94eb6ddb41981b39dc797a814111222'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div class='avia_textblock'  itemprop=\"text\" ><h5 style=\"text-align: center;\">Sujet de th\u00e8se :<\/h5>\n<h5 style=\"text-align: center;\">\u00a0\u00bb Fabrication And Caracterisation Of GaN Power Diodes And Transistors For DC-DC Voltage Converter \u00ab\u00a0<a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero2.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-49195 alignright\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero2.jpg\" alt=\"\" width=\"155\" height=\"117\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero2.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero2-16x12.jpg 16w\" sizes=\"auto, (max-width: 155px) 100vw, 155px\" \/><\/a><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-49194 alignleft\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero1.jpg\" alt=\"\" width=\"112\" height=\"106\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero1.jpg 225w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero1-13x12.jpg 13w\" sizes=\"auto, (max-width: 112px) 100vw, 112px\" \/><\/a><\/h5>\n<p><span style=\"color: #0000ee;\"><br \/>\n<\/span>This thesis work fits into a need of integrability of energy conversion circuit with high power density. The temperature tolerance and conduction properties of GaN devices enable high electrical efficiency and a significant volume decrease of embedded systems. The target application is the DC-DC voltage conversion, and the primary active devices fabrication processes for making a switching cell \u2013 an AlGaN\/GaN High Electron Mobility Transistor (HEMT) and a field-effect rectifier diode \u2013 are the main goal. A power charge supply until a kilowatt is waiting.<br \/>\nThe first technological lock in the HEMT development is to plan a specific process allowing its normally-off (enhancement mode) behavior, that is essential for a security need in this purpose.<br \/>\nTherefore, the main part of this work aims to find out a stable fluorinated plasma treatment of the AlGaN surface layer.<a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero3.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"wp-image-49196 aligncenter\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero3-300x135.jpg\" alt=\"\" width=\"364\" height=\"165\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero3-300x135.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero3-18x8.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2022\/01\/Quentin-Fornasiero3.jpg 454w\" sizes=\"auto, (max-width: 364px) 100vw, 364px\" \/><\/a>The second challenge is the realization of a low power consumption field-effect rectifier. The process-controlled channel pinch-off lets avoid the basic constraints of the GaN Schottky diode, by reducing the on state-voltage threshold, the reverse leakage current and the anode capacitance.<\/p>\n<\/div><\/section><\/p><\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-49191","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/49191","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=49191"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/49191\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=49191"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}