{"id":25963,"date":"2018-10-12T11:07:26","date_gmt":"2018-10-12T09:07:26","guid":{"rendered":"https:\/\/www.iemn.fr\/?page_id=25963"},"modified":"2025-04-17T13:57:59","modified_gmt":"2025-04-17T11:57:59","slug":"research","status":"publish","type":"page","link":"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research","title":{"rendered":"Research"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_submenu  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_44_1gaackj7j92dz\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"bgposition:50% 50%;duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" 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menu-item-top-level menu-item-top-level-1' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Introduction<\/span><\/a><\/li>\n<li class='menu-item av-1t3cjwr-a5702274dfa7b6f7c8653d0137a5684a menu-item-top-level menu-item-top-level-2' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/members'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Members<\/span><\/a><\/li>\n<li class='menu-item av-46xxvv-8e4b34625e0523616516b854b39c251b menu-item-top-level menu-item-top-level-3' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Research Highlights<\/span><\/a><\/li>\n<li class='menu-item av-lxn84xkh-de8acd69afabdc439a45ee1ff0e1182a menu-item-top-level menu-item-top-level-4' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/projets-europeens-internationaux-pia-anr'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>European \/ international \/ PIA \/ ANR projects<\/span><\/a><\/li>\n<li class='menu-item av-lxt1kd7p-8e8e58fa2c0692b19311b120914524ca menu-item-top-level menu-item-top-level-5' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/actualites-du-groupe-puissance'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>News<\/span><\/a><\/li>\n<\/ul><\/div><\/div><div class='sticky_placeholder'><\/div><div id='after_submenu_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-25963'><div class='entry-content-wrapper clearfix'>\n<div  class='togglecontainer av-m9lb3n6i-1a71167d92cfa096e903d8434edd5607  avia-builder-el-2  el_after_av_submenu  avia-builder-el-no-sibling  toggle_close_all' >\n<section class='av_toggle_section av-m9lb3ext-220dad18b3b6c7bd801062966d014015'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-1' data-fake-id='#toggle-id-1' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-1' data-slide-speed=\"200\" data-title=\"2025 : HEMTs ScAlN\/GaN sur Si pour applications RF\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: 2025 : HEMTs ScAlN\/GaN sur Si pour applications RF\" data-aria_expanded=\"Click to collapse: 2025 : HEMTs ScAlN\/GaN sur Si pour applications RF\">2025 : HEMTs ScAlN\/GaN sur Si pour applications RF<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-1' aria-labelledby='toggle-toggle-id-1' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong>HEMTs ScAlN \/ GaN sur Si pour applications RF<\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><strong>2025 <\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><em>Ce r\u00e9sultat a \u00e9t\u00e9 obtenu dans le cadre d\u2019une collaboration entre l\u2019IEMN et le Centre de Recherche sur l&rsquo;H\u00e9t\u00e9ro-Epitaxie et ses Applications (CRHEA). <\/em><\/p>\n<p><em>\u00a0<\/em><\/p>\n<p>Le ScAlN, semi-conducteur \u00e0 large bande interdite, est un mat\u00e9riau barri\u00e8re prometteur pour les transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) de la prochaine g\u00e9n\u00e9ration, plus performant que l&rsquo;AlGaN en raison de la possibilit\u00e9 d&rsquo;induire un gaz \u00e9lectronique bidimensionnel (2DEG) avec une densit\u00e9 de porteurs plus \u00e9lev\u00e9e et une barri\u00e8re plus fine, tout en maintenant un d\u00e9saccord de maille plus faible par rapport au GaN. Son int\u00e9gration sur des substrats de silicium permettra des applications RF \u00e0 faible co\u00fbt et \u00e0 haute performance. Dans ce travail, une h\u00e9t\u00e9rostructure ScAlN\/GaN avec une barri\u00e8re d\u2019\u00e9paisseur inf\u00e9rieure \u00e0 10 nm, est obtenue par \u00e9pitaxie par jets mol\u00e9culaires \u00e0 la source d&rsquo;ammoniac (NH<sub>3<\/sub>-MBE) sur substrat silicium (111). La densit\u00e9 de 2DEG est d&rsquo;environ 1.6 x 10<sup>13<\/sup> cm<sup>-2<\/sup> avec une mobilit\u00e9 \u03bc \u223c 621 cm<sup>2<\/sup>\/V.s. Une densit\u00e9 maximale de courant de drain de 1.35 A\/mm \u00e0 V<sub>G<\/sub>=0V et une transconductance maximale de ~284 mS\/mm \u00e0 V<sub>G<\/sub>=-3.5V sont obtenues. Sur un transistor \u00e0 courte longueur de grille (75 nm), une fr\u00e9quence de coupure du gain de courant (f<sub>T<\/sub>) de 82 GHz et une fr\u00e9quence d&rsquo;oscillation maximale (f<sub>MAX<\/sub>) de 112 GHz sont obtenues. Ces r\u00e9sultats pr\u00e9liminaires d\u00e9montrent le potentiel des HEMT \u00e0 base de ScAlN\/GaN sur des substrats de silicium \u00e0 faible co\u00fbt.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2025\/04\/Image1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-73240\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2025\/04\/Image1-300x225.jpg\" alt=\"\" width=\"271\" height=\"203\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2025\/04\/Image1-300x225.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2025\/04\/Image1-16x12.jpg 16w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2025\/04\/Image1.jpg 375w\" sizes=\"auto, (max-width: 271px) 100vw, 271px\" \/><\/a> <a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2025\/04\/Image2.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-73241\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2025\/04\/Image2-300x270.jpg\" alt=\"\" width=\"264\" height=\"238\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2025\/04\/Image2-300x270.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2025\/04\/Image2-13x12.jpg 13w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2025\/04\/Image2.jpg 348w\" sizes=\"auto, (max-width: 264px) 100vw, 264px\" \/><\/a><\/p>\n<p>Reference :<\/p>\n<p>[1] ScAlN\/GaN-on-Si (111) HEMTs for RF applications.<\/p>\n<p>S. El Whibi, N. Bhat, Y. Fouzi, N. Defrance, J-C De Jaeger, Z. Bougrioua, F. Bartoli, M. Hugues, Y. Cordier, M. Lesecq, <em>Applied Physics Express<\/em>, 2025, 18 (4), pp.046501.\u00a0<a href=\"https:\/\/dx.doi.org\/10.35848\/1882-0786\/adc5db\">\u27e810.35848\/1882-0786\/adc5db\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-05008937v1\">\u27e8hal-05008937\u27e9<\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-4847e3ee8f15b2d00946547b4a1dea58'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-2' data-fake-id='#toggle-id-2' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-2' data-slide-speed=\"200\" data-title=\"2024 : Mod\u00e9lisation non lin\u00e9aire d\u2018un MIS-HEMT SiN\/AlN\/GaN compatible CMOS sur Si 200 mm fonctionnant \u00e0 des fr\u00e9quences d\u2019ondes millim\u00e9triques\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: 2024 : Mod\u00e9lisation non lin\u00e9aire d\u2018un MIS-HEMT SiN\/AlN\/GaN compatible CMOS sur Si 200 mm fonctionnant \u00e0 des fr\u00e9quences d\u2019ondes millim\u00e9triques\" data-aria_expanded=\"Click to collapse: 2024 : Mod\u00e9lisation non lin\u00e9aire d\u2018un MIS-HEMT SiN\/AlN\/GaN compatible CMOS sur Si 200 mm fonctionnant \u00e0 des fr\u00e9quences d\u2019ondes millim\u00e9triques\">2024: Non-linear modelling of a CMOS-compatible SiN\/AlN\/GaN MIS-HEMT on Si 200 mm operating at millimetre-wave frequencies<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-2' aria-labelledby='toggle-toggle-id-2' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong>Non-linear modelling of a CMOS-compatible SiN\/AlN\/GaN MIS-HEMT on 200 mm Si operating at millimetre-wave frequencies<\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><strong>2024<\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><em>This result was obtained as part of a collaboration between IEMN and CEA-LETI. <strong>&#8211;<\/strong> French Atomic Energy and Alternative Energies Commission - Electronics and Information Technology Laboratory<\/em><em>. <\/em><\/p>\n<p><em>\u00a0<\/em><\/p>\n<p>The performance of a CMOS-compatible SiN\/AlN\/GaN MIS-HEMT on a 200 mm silicon substrate with high Ka-band power capabilities is evaluated. The devices have F<sub>t<\/sub> \/ F<sub>max<\/sub> 80\/170 GHz for a 2x50x0.15 \u00b5m topology<sup>2<\/sup>The devices also offer exceptional and competitive large-signal performance compared with GaN\/SiC at 40 GHz. The devices have a PAE power-added efficiency of 40 % and a saturated output power (P<sub>sat<\/sub>) of 6.6 W\/mm. To take full advantage of the capabilities of this new technology, an empirical Angelov model has been modified to accurately describe the electrical behaviour of the devices. The proposed model has been validated by comparing power measurements at 40 GHz with the simulation. It will be used to design future MMIC power amplifiers dedicated to Ka-Ku band applications.<\/p>\n<p>Reference :<\/p>\n<p><em>Nonlinear Modeling of CMOS Compatible SiN\/AlN\/GaN MIS-HEMT on 200mm Si Operating at mm-Wave Frequencies <\/em><\/p>\n<p>Y. Fouzi, E. Morvan, Y. Gobil, F. Morisot, Etienne Okada, S. Bollaert, N. Defrance, 2024 19th European Microwave Integrated Circuits Conference (EuMIC), Sep 2024, Paris, France. pp.303-306, <u><a href=\"https:\/\/dx.doi.org\/10.23919\/EuMIC61603.2024.10732270\">\u27e810.23919\/EuMIC61603.2024.10732270\u27e9<\/a><\/u><u><a href=\"https:\/\/hal.science\/hal-04765665v1\">\u27e8hal-04765665\u27e9<\/a><\/u><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-df530e6b69e1bb936a20ff99d882c979'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-3' data-fake-id='#toggle-id-3' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-3' data-slide-speed=\"200\" data-title=\"2023 : Am\u00e9lioration des performances des HEMTs AlGaN\/GaN sur substrat 6H-SiC gr\u00e2ce \u00e0 la technologie de contacts ohmiques non alli\u00e9s \" data-title-open=\"\" data-aria_collapsed=\"Click to expand: 2023 : Am\u00e9lioration des performances des HEMTs AlGaN\/GaN sur substrat 6H-SiC gr\u00e2ce \u00e0 la technologie de contacts ohmiques non alli\u00e9s \" data-aria_expanded=\"Click to collapse: 2023 : Am\u00e9lioration des performances des HEMTs AlGaN\/GaN sur substrat 6H-SiC gr\u00e2ce \u00e0 la technologie de contacts ohmiques non alli\u00e9s \">2023 : Am\u00e9lioration des performances des HEMTs AlGaN\/GaN sur substrat 6H-SiC gr\u00e2ce \u00e0 la technologie de contacts ohmiques non alli\u00e9s <span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-3' aria-labelledby='toggle-toggle-id-3' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong>Am\u00e9lioration des performances des HEMTs AlGaN\/GaN sur substrat 6H-SiC gr\u00e2ce \u00e0 la technologie de contacts ohmiques non alli\u00e9s <\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><strong>2023 <\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><em>Ce r\u00e9sultat a \u00e9t\u00e9 obtenu dans le cadre d\u2019une collaboration entre l\u2019IEMN, le Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications (CRHEA) et le Groupe de Recherche en Mat\u00e9riaux, Micro\u00e9lectronique, Acoustique, Nanotechnologies (GREMAN). <\/em><\/p>\n<p><em>\u00a0<\/em><\/p>\n<p>Pour repousser les limites en fr\u00e9quence des dispositifs HEMTs \u00e0 base de GaN, il est essentiel de r\u00e9duire la r\u00e9sistance R<sub>C<\/sub> des contacts ohmiques de source et de drain. Dans ce contexte, nous avons d\u00e9velopp\u00e9 un proc\u00e9d\u00e9 de contacts ohmiques non alli\u00e9s obtenus par recroissance de GaN dop\u00e9 sur des HEMTs AlGaN\/GaN \u00e9pitaxi\u00e9s sur substrat 6H-SiC.<\/p>\n<p>Les performances sont notablement am\u00e9lior\u00e9es par rapport \u00e0 une technologie de contacts ohmiques alli\u00e9s (r\u00e9sultats entre parenth\u00e8se donn\u00e9s \u00e0 titre comparatif). Une faible r\u00e9sistance de contact de 0,13 \u03a9.mm (vs 0,35 \u03a9.mm) est obtenue. Le dispositif avec une grille 75 nm pr\u00e9sente une densit\u00e9 de courant maximale de 1,1 A\/mm (vs 0.96 A\/mm) \u00e0 V<sub>GS<\/sub> = 1 V et une transconductance g<sub>m_MAX<\/sub> de 464 mS\/mm (vs 280 mS\/mm). Des fr\u00e9quences f<sub>T<\/sub>\/f<sub>MAX<\/sub> de 80\/150 GHz (vs 70\/110 GHz) sont atteintes. A V<sub>DS<\/sub> = 25 V, une densit\u00e9 de puissance de sortie de 3,8 W\/mm est obtenue \u00e0 40 GHz, associ\u00e9e \u00e0 un rendement de puissance ajout\u00e9e de 42,8 % et \u00e0 un gain de puissance lin\u00e9aire de 6 dB.<\/p>\n<p>Les effets de pi\u00e9geages (drain lag et gate lag) sont drastiquement r\u00e9duits (voir tableau Fig.1).<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image5.png\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-medium wp-image-66346\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image5-300x271.png\" alt=\"\" width=\"300\" height=\"271\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image5-300x271.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image5-1030x929.png 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image5-768x693.png 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image5-1536x1386.png 1536w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image5-13x12.png 13w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image5-1500x1354.png 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image5-705x636.png 705w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image5.png 1659w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image6.png\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-medium wp-image-66347\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image6-300x277.png\" alt=\"\" width=\"300\" height=\"277\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image6-300x277.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image6-1030x952.png 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image6-768x710.png 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image6-1536x1420.png 1536w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image6-13x12.png 13w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image6-1500x1386.png 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image6-705x652.png 705w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image6.png 1675w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a><\/p>\n<p>R\u00e9f\u00e9rences\u00a0:<\/p>\n<p>[1] <a href=\"https:\/\/hal.science\/hal-04084512\"><em>Performance improvement with non-alloyed ohmic contacts technology on AlGaN\/GaN High Electron Mobility Transistors on 6H-SiC substrate<\/em><\/a><\/p>\n<p>M. Lesecq, Y. Fouzi, A. Abboud, N. Defrance, F. Vaurette, S. Ouendi, E. Okada, M. Portail, M. Bah, D. Alquier, J-C. de Jaeger, E. Frayssinet, Y. Cordier, Microelectronic Engineering, 2023, 276, pp.111998. <a href=\"https:\/\/dx.doi.org\/10.1016\/j.mee.2023.111998\">\u27e810.1016\/j.mee.2023.111998\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-04084512\">\u27e8hal-04084512\u27e9<\/a><\/p>\n<p>[2] <a href=\"https:\/\/hal.science\/hal-04039596\"><em>Performance improvement with non-alloyed ohmic contacts technology on AlGaN\/GaN High Electron Mobility Transistors on 6H-SiC substrate<\/em><\/a><\/p>\n<p>M. Lesecq, Y. Fouzi, A. Abboud, N. Defrance, F. Vaurette, S. Ouendi, E. Okada, M. Portail, M. Bah, D. Alquier, J.C. de Jaeger, E. Frayssinet, Y. Cordier, <em>European Materials Research Society 2022 Fall meeting, (E-MRS 2022)<\/em>, Sep 2022, Warsaw, Poland, <a href=\"https:\/\/hal.science\/hal-04039596\">\u27e8hal-04039596\u27e9<\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-03a92a86cced6c909f69d78a4078f22e'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-4' data-fake-id='#toggle-id-4' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-4' data-slide-speed=\"200\" data-title=\"2022 : HEMTs AlGaN\/GaN sur substrat composite 3C-SiC\/Si\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: 2022 : HEMTs AlGaN\/GaN sur substrat composite 3C-SiC\/Si\" data-aria_expanded=\"Click to collapse: 2022 : HEMTs AlGaN\/GaN sur substrat composite 3C-SiC\/Si\">2022 : HEMTs AlGaN\/GaN sur substrat composite 3C-SiC\/Si<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-4' aria-labelledby='toggle-toggle-id-4' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong>HEMTs AlGaN\/GaN sur substrat composite 3C-SiC\/Si <\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><strong>2022 <\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><em>Ce r\u00e9sultat a \u00e9t\u00e9 obtenu dans le cadre d\u2019une collaboration entre l\u2019IEMN, le Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications (CRHEA) et le Groupe de Recherche en Mat\u00e9riaux, Micro\u00e9lectronique, Acoustique, Nanotechnologies (GREMAN). <\/em><\/p>\n<p><em>\u00a0<\/em><\/p>\n<p>Les performances des HEMTs AlGaN\/GaN sont fortement li\u00e9es aux propri\u00e9t\u00e9s du substrat utilis\u00e9 pour la croissance de l\u2019h\u00e9t\u00e9rostrusture. Les technologies sur silicium pr\u00e9sentent de bonnes performances avec un co\u00fbt moins \u00e9lev\u00e9 que celles sur SiC mais souffrent de la difficult\u00e9 \u00e0 produire des couches de GaN de haute qualit\u00e9 cristalline. G\u00e9n\u00e9ralement, la structure d\u2019un HEMT AlGaN\/GaN commence par la croissance d\u2019une couche de nucl\u00e9ation AlN. Les param\u00e8tres de croissance de cette couche influencent fortement les pertes de propagation en raison du risque de diffusion de l\u2019Al et\/ou du Ga dans le substrat Si. L\u2019utilisation d\u2019une couche interm\u00e9diaire cubique (3C-SiC) comme tremplin pour la croissance d\u2019h\u00e9t\u00e9rostructures HEMT AlGaN\/GaN limite les risques de g\u00e9n\u00e9ration de fissures, am\u00e9liore la qualit\u00e9 cristalline du film de GaN et limite la d\u00e9gradation de la r\u00e9sistivit\u00e9 du substrat de silicium permettant de pr\u00e9server de faibles pertes de propagation RF. Dans ce contexte, la croissance d\u2019un HEMT AlGaN\/GaN a \u00e9t\u00e9 r\u00e9alis\u00e9e sur une couche de 3C-SiC de 0,8 \u00b5m d\u2019\u00e9paisseur sur un substrat de silicium hautement r\u00e9sistif. Les pertes de propagation sont de 0,41 dB\/mm \u00e0 40 GHz. Malgr\u00e9 une r\u00e9sistance de contact ohmique de 0,6 \u03a9.mm, une densit\u00e9 maximale de courant de 0,7 A\/mm est obtenue \u00e0 V<sub>GS<\/sub> =+1V pour un HEMT de longueur de grille \u00e9gale \u00e0 75 nm. Un pic de transconductance sup\u00e9rieur \u00e0 250 mS\/mm et des fr\u00e9quences de f<sub>T<\/sub>\/f<sub>max<\/sub> de 60\/98 GHz ont \u00e9t\u00e9 mesur\u00e9es.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-67080\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-300x195.jpg\" alt=\"\" width=\"422\" height=\"274\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-300x195.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-768x500.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-18x12.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-705x459.jpg 705w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1.jpg 860w\" sizes=\"auto, (max-width: 422px) 100vw, 422px\" \/><\/a><\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image2.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-67081\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image2-300x235.jpg\" alt=\"\" width=\"417\" height=\"327\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image2-300x235.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image2-768x602.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image2-15x12.jpg 15w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image2-705x553.jpg 705w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image2.jpg 923w\" sizes=\"auto, (max-width: 417px) 100vw, 417px\" \/><\/a><\/p>\n<p>R\u00e9f\u00e9rences\u00a0:<\/p>\n<p>[1] <em><a href=\"https:\/\/hal.science\/hal-03741438\">AlGaN\/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC\/Si(111) for RF Applications<\/a><\/em>,<\/p>\n<p>M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T-H. Ngo, M. Abou Daher, M. Zielinski, D. Alquier, J-C. de Jaeger, Y. Cordier, Materials Science Forum, 2022, 1062, pp.482-486. <a href=\"https:\/\/dx.doi.org\/10.4028\/p-2wi7o8\">\u27e810.4028\/p-2wi7o8\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-03741438\">\u27e8hal-03741438\u27e9<\/a><\/p>\n<p>[2] <em><a href=\"https:\/\/hal.science\/hal-02929058\">Metalorganic chemical vapor phase epitaxy growth of buffer layers on 3C-SiC\/Si(111) templates for AlGaN\/GaN high electron mobility transistors with low RF losses<\/a><\/em><\/p>\n<p>E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T. Huong Ngo, M. Zielinski, M. Portail, J-C de Jaeger, Y. Cordier, <em>physica status solidi (a)<\/em>, 2020, 217 (7), pp.1900760.\u00a0<a href=\"https:\/\/dx.doi.org\/10.1002\/pssa.201900760\">\u27e810.1002\/pssa.201900760\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-02929058\">\u27e8hal-02929058\u27e9<\/a><\/p>\n<p>[3] <em><a href=\"https:\/\/hal.science\/hal-04037282\">Comparison of AlGaN\/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC\/Si(111), Si(111) and 6H-SiC for RF applications<\/a><\/em><\/p>\n<p>M. Lesecq, E. Frayssinet, M. Portail, M Bah, N. Defrance, T-H. Ngo, M. Abou Daher, Y. Fouzi, Y. Cordier, A. Abboud, J-C. de Jaeger, M. Zielinski, D. Alquier, <em>International Workshop on Nitride Semi-conductors, IWN 2022<\/em>, Oct 2022, Berlin, Germany, <a href=\"https:\/\/hal.science\/hal-04037282\">\u27e8hal-04037282\u27e9<\/a><\/p>\n<p>[4] <em><a href=\"https:\/\/hal.science\/hal-04038119\">AlGaN\/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC\/Si(111) for RF Applications<\/a><\/em><\/p>\n<p>M. Lesecq, E. Frayssinet, M. Portail, M. Bah, N. Defrance, T-H. Ngo, M. Abou Daher, M. Zielinski, D. Alquier, J-C. de Jaeger, Y. Cordier, <em>13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020)<\/em>, Oct 2021, Tours, France, <a href=\"https:\/\/hal.science\/hal-04038119\">\u27e8hal-04038119\u27e9<\/a><\/p>\n<p>[5] <em><a href=\"https:\/\/hal.science\/hal-04039430\">Low RF loss buffer layers on 3C-SiC\/Si(111) templates for AlGaN\/GaN High Electron Mobility Transistors<\/a><\/em><\/p>\n<p>E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, R. Comyn, M. Zielinski, M. Portail, J-C. de Jaeger, Y. Cordier, <em>13th International Conference on Nitride Semiconductors (ICNS 2019)<\/em>, Jul 2019, Washington, Seattle, United States, <a href=\"https:\/\/hal.science\/hal-04039430\">\u27e8hal-04039430\u27e9<\/a><\/p>\n<p>[6] <em><a href=\"https:\/\/hal.science\/hal-04038786\">MOVPE growth of buffer layers on 3C-SiC\/Si(111) templates for AlGaN\/GaN high electron mobility transistors with low RF losses<\/a><\/em><\/p>\n<p>E. Frayssinet, L. Nguyen, M. Lesecq, N. Defrance, M. Garcia Barros, R. Comyn, T. Huong Ngo, M. Zielinski, M. Portail, J-C. de Jaeger, Y. Cordier, <em>43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019<\/em>, Jun 2019, Cabourg, France, <a href=\"https:\/\/hal.science\/hal-04038786\">\u27e8hal-04038786\u27e9<\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-43749375fdbf37840366db7c6534092c'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-5' data-fake-id='#toggle-id-5' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-5' data-slide-speed=\"200\" data-title=\"2020 : D\u00e9veloppement de d\u00e9tecteurs de puissance en technologie BiCMOS 55 nm pour les applications 5G\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: 2020 : D\u00e9veloppement de d\u00e9tecteurs de puissance en technologie BiCMOS 55 nm pour les applications 5G\" data-aria_expanded=\"Click to collapse: 2020 : D\u00e9veloppement de d\u00e9tecteurs de puissance en technologie BiCMOS 55 nm pour les applications 5G\">2020 : D\u00e9veloppement de d\u00e9tecteurs de puissance en technologie BiCMOS 55 nm pour les applications 5G<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-5' aria-labelledby='toggle-toggle-id-5' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong>D\u00e9veloppement de d\u00e9tecteurs de puissance en technologie BiCMOS 55nm pour les applications 5G<\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p>Les principaux objectifs de la 5G sont de fournir des d\u00e9bits de donn\u00e9es plus \u00e9lev\u00e9s, une plus faible latence, une couverture sans faille, une faible consommation d\u2019\u00e9nergie et des communications plus fiables. Plusieurs gammes de fr\u00e9quences d\u2019ondes millim\u00e9triques sont utilis\u00e9es dans les syst\u00e8mes 5G pour la liaison descendante (jusqu\u2019\u00e0 100 GHz), ce qui permet de fournir des d\u00e9bits de donn\u00e9es plus \u00e9lev\u00e9s et une latence plus faible que la 4G. Cependant, une plus grande consommation d\u2019\u00e9nergie est n\u00e9cessaire, d\u2019autant plus que le fait de travailler \u00e0 des fr\u00e9quences \u00e9lev\u00e9es pose le probl\u00e8me de l\u2019effet thermique. Dans ce contexte, plusieurs m\u00e9thodes existent pour r\u00e9duire cette consommation. La technique \u00ab\u00a0enveloppe tracking\u00a0\u00bb est une solution prometteuse pour augmenter l\u2019efficacit\u00e9 des dispositifs 5G. Pour cette technique, plusieurs topologies de d\u00e9tecteurs de puissance sont propos\u00e9es. Ces d\u00e9tecteurs sont con\u00e7us en utilisant la technologie SiGe 55-nm BiCMOS de STMicroelectronics dans la bande de fr\u00e9quence 35 -55 GHz permettant de couvrir plusieurs bandes 5G.<\/p>\n<ul>\n<li>Conception et caract\u00e9risation d\u2019un d\u00e9tecteur accordable bas\u00e9 sur une diode PN avec ajustement de la polarisation en courant (mod\u00e8le valid\u00e9 jusque 110 GHz, sensibilit\u00e9 entre 500 et 1400 V\/W pour une variation de courant entre 100 nA et 10 \u00b5A, consommation inf\u00e9rieure \u00e0 60 nW)<\/li>\n<li>Conception et caract\u00e9risation d\u2019un d\u00e9tecteur \u00ab\u00a0zero bias\u00a0\u00bb (faible puissance \u00e9quivalente de bruit de ).<\/li>\n<li>Conception et caract\u00e9risation d\u2019un d\u00e9tecteur \u00ab zero bias \u00bb bas\u00e9 sur un stack de six transistors, (sensibilit\u00e9 de 1380 V\/W mais puissance \u00e9quivalente de bruit de )<\/li>\n<li>Conception et caract\u00e9risation d\u2019un d\u00e9tecteur \u00ab zero bias \u00bb compens\u00e9 en temp\u00e9rature en temps r\u00e9el (Sensibilit\u00e9 entre 1400 et 1650 V\/W entre 20 et 90\u00b0C \u00e0 43 GHz).<\/li>\n<\/ul>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-68048\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-1-300x156.jpg\" alt=\"\" width=\"519\" height=\"270\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-1-300x156.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-1-768x399.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-1-18x9.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-1-705x367.jpg 705w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/07\/Image1-1.jpg 902w\" sizes=\"auto, (max-width: 519px) 100vw, 519px\" \/><\/a><\/p>\n<p>References<\/p>\n<p>[1] <em>Temperature compensated power detector towards power consumption optimization in 5G devices <\/em><\/p>\n<p>I. Alaji, E. Okada, D. Gloria, G. Ducournau, C. Gaqui\u00e8re, Microelectronics Journal, 2022, 120, pp.105351. <a href=\"https:\/\/dx.doi.org\/10.1016\/j.mejo.2021.105351\">\u27e810.1016\/j.mejo.2021.105351\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-03592954\">\u27e8hal-03592954\u27e9<\/a><\/p>\n<p>[2] <em>Design of zero bias power detectors towards power consumption optimization in 5G devices<\/em><\/p>\n<p>I. Alaji, W. Aouimeur, H. Ghanem, E. Okada, S. Lepilliet, D. Gloria, G. Ducournau, C. Gaqui\u00e8re, Microelectronics Journal, 2021, 111, pp.105035. <a href=\"https:\/\/dx.doi.org\/10.1016\/j.mejo.2021.105035\">\u27e810.1016\/j.mejo.2021.105035\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-03542166\">\u27e8hal-03542166\u27e9<\/a><\/p>\n<p>[3] <em>Design and characterization of (140-220) GHz frequency compensated power detector<\/em><\/p>\n<p>I. Alaji, S. Lepilliet, D. Gloria, G. Ducournau, C. Gaqui\u00e8re, IEEE Transactions on Microwave Theory and Techniques, 2021, 69 (4), pp.2352-2356. <a href=\"https:\/\/dx.doi.org\/10.1109\/TMTT.2021.3062054\">\u27e810.1109\/TMTT.2021.3062054\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-03390228\">\u27e8hal-03390228\u27e9<\/a><\/p>\n<p>[4] Design of tunable power detector towards 5G applications<\/p>\n<p>I. Alaji, W. Aouimeur, H. Ghanem, E. Okada, S. Lepilliet, D. Gloria, G. Ducournau, C. Gaqui\u00e8re, Microwave and Optical Technology Letters, 2021, 63 (3), pp.823-828. <a href=\"https:\/\/dx.doi.org\/10.1002\/mop.32685\">\u27e810.1002\/mop.32685\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-03135959\">\u27e8hal-03135959\u27e9<\/a><\/p>\n<p>[5] Modeling and analysis of a broadband Schottky diode noise source up to 325 GHz based on 55-nm SiGe BiCMOS technology<\/p>\n<p>I. Alaji, W. Aouimeur, S. Lepilliet, D. Gloria, C. Gaqui\u00e8re, F. Danneville, G. Ducournau, H. Ghanem, J. Carlos Azevedo Goncalves, P. Chevalier, IEEE Transactions on Microwave Theory and Techniques, 2020, 68 (6), pp.2268-2277. <a href=\"https:\/\/dx.doi.org\/10.1109\/TMTT.2020.2980513\">\u27e810.1109\/TMTT.2020.2980513\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-03141657\">\u27e8hal-03141657\u27e9<\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-89239773cce1964ccf34457904d65f6d'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-6' data-fake-id='#toggle-id-6' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-6' data-slide-speed=\"200\" data-title=\"2020 : Transfert de HEMTs AlGaN\/GaN sur substrat diamant par collage AlN\/AlN\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: 2020 : Transfert de HEMTs AlGaN\/GaN sur substrat diamant par collage AlN\/AlN\" data-aria_expanded=\"Click to collapse: 2020 : Transfert de HEMTs AlGaN\/GaN sur substrat diamant par collage AlN\/AlN\">2020 : Transfert de HEMTs AlGaN\/GaN sur substrat diamant par collage AlN\/AlN<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-6' aria-labelledby='toggle-toggle-id-6' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong>Transfert de HEMTs AlGaN\/GaN sur substrat diamant par collage AlN\/AlN<\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><strong>2020<\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><em>Ce r\u00e9sultat a \u00e9t\u00e9 obtenu dans le cadre d\u2019une collaboration entre l\u2019IEMN, le Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications (CRHEA) et le Laboratoire d\u2019Analyse et d\u2019Architecture des Syst\u00e8mes (LAAS). <\/em><\/p>\n<p><em>\u00a0<\/em><\/p>\n<p>Le transfert de transistors de type HEMT sur substrat de diamant repr\u00e9sente une opportunit\u00e9 pour am\u00e9liorer la dissipation thermique lorsque le dispositif fonctionne \u00e0 des niveaux de puissance RF \u00e9lev\u00e9s. Dans ce contexte, la premi\u00e8re d\u00e9monstration de HEMT AlGaN\/GaN sur substrat de diamant obtenue par une technologie de transfert est pr\u00e9sent\u00e9e. Ce transfert est rendu possible par un collage \u00e0 base de fines couches de nitrure d\u2019aluminium (couches AlN obtenues par pulv\u00e9risation cathodique \u00e0 basse temp\u00e9rature).<\/p>\n<p>Divers dispositifs sont d\u2019abord fabriqu\u00e9s par microtechnologie \u00e0 partir d\u2019une h\u00e9t\u00e9rostructure AlGaN\/GaN \u00e9pitaxi\u00e9e sur un substrat de silicium (Si). Ensuite, les couches minces d\u2019AlGaN\/GaN avec les dispositifs sont lib\u00e9r\u00e9s de leur substrat Si et transf\u00e9r\u00e9s \u00e0 160\u00b0C sur un substrat en diamant gr\u00e2ce \u00e0 une liaison AlN-sur-AlN (voir \u00e9tapes fig. 2).<\/p>\n<p>Nous constatons que les transistors pr\u00e9sentent une l\u00e9g\u00e8re am\u00e9lioration de la densit\u00e9 maximale de courant continu (+14%) et de la r\u00e9sistance R<sub>ON<\/sub> (-16%) apr\u00e8s le transfert sur diamant. Le dispositif sur diamant de longueur de grille L<sub>G<\/sub>=80 nm d\u00e9livre une densit\u00e9 de courant maximum de 690 mA.mm<sup>-1<\/sup> \u00e0 V<sub>GS<\/sub> = 0 V. Des fr\u00e9quences f<sub>T<\/sub>\/f<sub>MAX<\/sub> de 85\/106 GHz sont obtenues sans d\u00e9gradation apr\u00e8s transfert sur diamant.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-66785\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1-300x205.jpg\" alt=\"\" width=\"400\" height=\"274\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1-300x205.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1-18x12.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1.jpg 688w\" sizes=\"auto, (max-width: 400px) 100vw, 400px\" \/><\/a><\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-66786\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-1-300x190.jpg\" alt=\"\" width=\"399\" height=\"253\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-1-300x190.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-1-1030x651.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-1-768x486.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-1-18x12.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-1-705x446.jpg 705w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-1.jpg 1230w\" sizes=\"auto, (max-width: 399px) 100vw, 399px\" \/><\/a><\/p>\n<p>R\u00e9f\u00e9rences\u00a0:<\/p>\n<p><a href=\"https:\/\/hal.science\/hal-03249292\">[1] <em>Electrical and thermal analysis of AlGaN\/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer<\/em><\/a><\/p>\n<p>M. Abou Daher, M. Lesecq, N. Defrance, E. Okada, B. Boudart, Y. Guhel, J-G Tartarin, J-C de Jaeger, Microwave and Optical Technology Letters, 2021, 63 (9), pp.2376-2380. <a href=\"https:\/\/dx.doi.org\/10.1002\/mop.32919\">\u27e810.1002\/mop.32919\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-03249292\">\u27e8hal-03249292\u27e9<\/a><\/p>\n<p>[2] <a href=\"https:\/\/hal.science\/hal-02929037\"><em>AlGaN\/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology<\/em><\/a><\/p>\n<p>M. Abou Daher, M. Lesecq, P. Tilmant, N. Defrance, M. Rousseau, Y. Cordier, J-C. de Jaeger, J-G. Tartarin, Journal of Vacuum Science &amp; Technology B, Nanotechnology and Microelectronics, 2020, 38 (3), p.033201. <a href=\"https:\/\/dx.doi.org\/10.1116\/1.5143418\">\u27e810.1116\/1.5143418\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-02929037\">\u27e8hal-02929037\u27e9<\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-3666736942461cf0fea69bafd683a5f7'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-7' data-fake-id='#toggle-id-7' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-7' data-slide-speed=\"200\" data-title=\"2019 : M\u00e9thodes innovantes de caract\u00e9risation et de mod\u00e9lisation de composants GaN d\u00e9di\u00e9s \u00e0 l\u2019\u00e9lectronique de puissance\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: 2019 : M\u00e9thodes innovantes de caract\u00e9risation et de mod\u00e9lisation de composants GaN d\u00e9di\u00e9s \u00e0 l\u2019\u00e9lectronique de puissance\" data-aria_expanded=\"Click to collapse: 2019 : M\u00e9thodes innovantes de caract\u00e9risation et de mod\u00e9lisation de composants GaN d\u00e9di\u00e9s \u00e0 l\u2019\u00e9lectronique de puissance\">2019 : M\u00e9thodes innovantes de caract\u00e9risation et de mod\u00e9lisation de composants GaN d\u00e9di\u00e9s \u00e0 l\u2019\u00e9lectronique de puissance<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-7' aria-labelledby='toggle-toggle-id-7' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong>M\u00e9thodes innovantes de caract\u00e9risation et de mod\u00e9lisation de composants GaN d\u00e9di\u00e9s \u00e0 l\u2019\u00e9lectronique de puissance<\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><strong>2019<\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p>Au sein de l\u2019\u00e9quipe PUISSANCE, des m\u00e9thodologies innovantes de caract\u00e9risation et de mod\u00e9lisation de composants en nitrure de gallium (GaN) d\u00e9di\u00e9s \u00e0 l\u2019\u00e9lectronique de puissance incluant des diodes et des transistors, ont \u00e9t\u00e9 mises au point. Ces travaux r\u00e9pondent \u00e0 deux d\u00e9fis majeurs : la mont\u00e9e en fr\u00e9quence des composants de puissance et la difficult\u00e9 de produire des mod\u00e8les pr\u00e9cis sur une large bande de fr\u00e9quence. Les nouvelles techniques de caract\u00e9risation reposent sur l\u2019utilisation de m\u00e9thodes traditionnellement r\u00e9serv\u00e9es aux composants RF, notamment la mesure en param\u00e8tres S. Pour ce faire, l\u2019adaptation des composants de puissance a \u00e9t\u00e9 n\u00e9cessaire afin de les rendre compatibles avec les outils de mesure disponibles, tels que l\u2019analyseur de r\u00e9seau vectoriel. Cette adaptation a impliqu\u00e9 la cr\u00e9ation de dispositifs de caract\u00e9risation respectant l\u2019imp\u00e9dance caract\u00e9ristique de 50\u03a9. L\u2019utilisation de dispositifs de caract\u00e9risation sp\u00e9cifiques a n\u00e9cessit\u00e9 le d\u00e9veloppement de m\u00e9thodes d\u2019\u00e9talonnage pr\u00e9cises. Cela a inclus la cr\u00e9ation de dispositifs de calibration permettant de soustraire les \u00e9l\u00e9ments parasites induits par les dispositifs, afin d\u2019obtenir des mesures de param\u00e8tres S directement au niveau du plan du composant. En compl\u00e9ment de ces d\u00e9veloppements, un banc de mesure a \u00e9t\u00e9 mis au point pour enrichir le mod\u00e8le \u00e9lectrique avec des donn\u00e9es relatives aux effets thermiques et aux ph\u00e9nom\u00e8nes de pi\u00e9geage, aspects critiques dans les technologies GaN. Ces analyses sont essentielles pour garantir la pr\u00e9cision des mod\u00e8les sous diverses conditions op\u00e9rationnelles. Les mod\u00e8les obtenus, impl\u00e9ment\u00e9s sous le logiciel ADS, ont ensuite permis la conception et la r\u00e9alisation de convertisseurs de puissance haute fr\u00e9quence. Ces convertisseurs b\u00e9n\u00e9ficient directement des avanc\u00e9es r\u00e9alis\u00e9es en termes de caract\u00e9risation et de mod\u00e9lisation, assurant des performances optimales.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1-1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-66787\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1-1-300x242.jpg\" alt=\"\" width=\"400\" height=\"323\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1-1-300x242.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1-1-15x12.jpg 15w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1-1-495x400.jpg 495w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image1-1.jpg 576w\" sizes=\"auto, (max-width: 400px) 100vw, 400px\" \/><\/a><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-2.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-66788\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-2-300x242.jpg\" alt=\"\" width=\"400\" height=\"323\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-2-300x242.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-2-15x12.jpg 15w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-2-495x400.jpg 495w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-2.jpg 578w\" sizes=\"auto, (max-width: 400px) 100vw, 400px\" \/><\/a><\/p>\n<p>R\u00e9f\u00e9rences:<\/p>\n<p>[1] Extraction of packaged GaN power transistors parasitics using S-parameters<\/p>\n<p>L. Pace, N. Defrance, A. Videt, N. Idir, J-C. de Jaeger, V. Avramovic, IEEE Transactions on Electron Devices, 2019, 66 (6), pp.2583-2588. <a href=\"https:\/\/dx.doi.org\/10.1109\/TED.2019.2909152\">\u27e810.1109\/TED.2019.2909152\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-03140657\">\u27e8hal-03140657\u27e9<\/a><\/p>\n<p>[2] Investigation of Current Collapse Mechanism on AlGaN\/GaN Power Diodes<\/p>\n<p>Doublet, N. Defrance, E. Okada, L. Pace, T. Duquesne, E. Bouyssou, A. Yvon, N. Idir, J-C. de Jaeger, Electronics, 2023, 12 (9), pp.2007. <a href=\"https:\/\/dx.doi.org\/10.3390\/electronics12092007\">\u27e810.3390\/electronics12092007\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-04107504\">\u27e8hal-04107504\u27e9<\/a><\/p>\n<p>[3] Parasitic Loop Inductances Reduction of the PCB Layout in GaN-Based Power Converters Using S-Parameters and EM Simulations<\/p>\n<p>L. Pace, N. Idir, T. Duquesne, J.C. De Jaeger<\/p>\n<p><a href=\"https:\/\/www.mdpi.com\/about\/journals\">Journal<\/a> <a href=\"https:\/\/www.mdpi.com\/journal\/energies\">Energies<\/a>, <a href=\"https:\/\/www.mdpi.com\/1996-1073\/14\">Volume 14<\/a>, <a href=\"https:\/\/www.mdpi.com\/1996-1073\/14\/5\">Issue 5<\/a>, <a href=\"https:\/\/www.mdpi.com\/1996-1073\/14\/5\/1495?utm_campaign=releaseissue_energiesutm_medium=emailutm_source=releaseissueutm_term=titlelink104\">10.3390\/en14051495<\/a>, (March-1 2021), <a href=\"https:\/\/hal.science\/hal-03168976\">\u27e8hal-03168976\u27e9<\/a>.<\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-e55e49fe99248f338e856c9a4f0c66b0'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-8' data-fake-id='#toggle-id-8' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-8' data-slide-speed=\"200\" data-title=\"2019 : Densit\u00e9 de puissance record de 2W\/mm pour des transistors HEMTs AlGaN\/GaN sur substrat free-standing GaN\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: 2019 : Densit\u00e9 de puissance record de 2W\/mm pour des transistors HEMTs AlGaN\/GaN sur substrat free-standing GaN\" data-aria_expanded=\"Click to collapse: 2019 : Densit\u00e9 de puissance record de 2W\/mm pour des transistors HEMTs AlGaN\/GaN sur substrat free-standing GaN\">2019 : Densit\u00e9 de puissance record de 2W\/mm pour des transistors HEMTs AlGaN\/GaN sur substrat free-standing GaN<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-8' aria-labelledby='toggle-toggle-id-8' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p><strong>Densit\u00e9 de puissance record de 2W\/mm pour des transistors HEMTs AlGaN\/GaN sur substrat free-standing GaN. <\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><strong>2019 <\/strong><\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><em>Ce r\u00e9sultat a \u00e9t\u00e9 obtenu dans le cadre d\u2019une collaboration entre l\u2019IEMN, le Centre de Recherche sur l\u2019H\u00e9t\u00e9ro-Epitaxie et ses Applications (CRHEA) et le Laboratoire d\u2019Analyse et d\u2019Architecture des Syst\u00e8mes (LAAS). <\/em><\/p>\n<p><em>\u00a0<\/em><\/p>\n<p>Une performance en puissance record \u00e0 40 GHz a \u00e9t\u00e9 obtenue sur un transistor \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) AlGaN\/GaN \u00e9pitaxi\u00e9 sur substrat de GaN autosupport\u00e9 peu disloqu\u00e9 (substrat de Saint-Gobain Lumilog).<\/p>\n<p>Une densit\u00e9 de puissance de sortie de 2 W.mm<sup>-1<\/sup> associ\u00e9e \u00e0 une efficacit\u00e9 en puissance ajout\u00e9e de 20,5 % et \u00e0 un gain en puissance lin\u00e9aire (G<sub>p<\/sub>) de 4,2 dB est d\u00e9montr\u00e9e pour un dispositif de longueur de grille de 70 nm. Le dispositif pr\u00e9sente une densit\u00e9 de courant de drain DC maximale de 950 mA.mm<sup>-1<\/sup> et une transconductance extrins\u00e8que maximale (g<sub>m Max<\/sub>) de 300 mS.mm<sup>-1<\/sup> \u00e0 V<sub>DS<\/sub> = 6 V.<\/p>\n<p>Une fr\u00e9quence de coupure intrins\u00e8que maximale f<sub>T<\/sub> de 100 GHz et une fr\u00e9quence d\u2019oscillation intrins\u00e8que maximale f<sub>Max<\/sub> de 125 GHz sont obtenues \u00e0 partir des mesures de param\u00e8tres S.<\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone wp-image-66349\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-300x147.jpg\" alt=\"\" width=\"424\" height=\"208\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-300x147.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-768x376.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-18x9.jpg 18w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2-705x345.jpg 705w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image2.jpg 911w\" sizes=\"auto, (max-width: 424px) 100vw, 424px\" \/><\/a><\/p>\n<p><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3.png\"><img loading=\"lazy\" decoding=\"async\" class=\"alignnone size-medium wp-image-66350\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3-300x293.png\" alt=\"\" width=\"300\" height=\"293\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3-300x293.png 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3-1030x1006.png 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3-768x750.png 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3-1536x1500.png 1536w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3-12x12.png 12w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3-36x36.png 36w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3-1500x1465.png 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3-705x689.png 705w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/06\/Image3.png 1551w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a><\/p>\n<p>R\u00e9f\u00e9rences\u00a0:<\/p>\n<p>[1] <a href=\"https:\/\/hal.science\/hal-02929065\"><em>2 W \/ mm power density of an AlGaN\/GaN HEMT grown on free-standing GaN substrate at 40 GHz<\/em><\/a><\/p>\n<p>M-R. Irekti, M. Lesecq, N. Defrance, E. Okada, E. Frayssinet, Y. Cordier, J-G. Tartarin, J-C. de Jaeger, Semiconductor Science and Technology, 2019, 34 (12), pp.12LT01.\u00a0<a href=\"https:\/\/dx.doi.org\/10.1088\/1361-6641\/ab4e74\">\u27e810.1088\/1361-6641\/ab4e74\u27e9<\/a>.\u00a0<a href=\"https:\/\/hal.science\/hal-02929065\">\u27e8hal-02929065\u27e9<\/a><\/p>\n<p>[2] <a href=\"https:\/\/hal.science\/hal-04039402\"><em>Development of AlGaN\/GaN RF HEMT technology on free-standing GaN substrate<\/em><\/a><\/p>\n<p>M.R. Irekti, M. Lesecq, N. Defrance, M. Boucherta, E. Frayssinet, Y. Cordier, J.G. Tartarin, J-C. de Jaeger, <em>43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019<\/em>, Jun 2019, Cabourg, France, <a href=\"https:\/\/hal.science\/hal-04039402\">\u27e8hal-04039402\u27e9<\/a><\/p>\n<p>[3] <a href=\"https:\/\/www.semiconductor-today.com\/news_items\/2019\/dec\/stgobain-121219.shtml\"><em>Record power density aluminium gallium nitride barrier transistors (semiconductor-today.com)<\/em><\/a><\/p>\n<\/div><\/div><\/div><\/section>\n<\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"parent":25722,"menu_order":10,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-25963","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25963","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=25963"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25963\/revisions"}],"up":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25722"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=25963"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}