{"id":25907,"date":"2018-10-11T14:13:03","date_gmt":"2018-10-11T12:13:03","guid":{"rendered":"https:\/\/www.iemn.fr\/?page_id=25907"},"modified":"2019-02-11T14:57:13","modified_gmt":"2019-02-11T12:57:13","slug":"new-technological-routes","status":"publish","type":"page","link":"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/new-technological-routes","title":{"rendered":"New technological routes to improve thermal managements in GaN HEMTs"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_submenu  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_44_1bsocojujpemo\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"bgposition:50% 50%;duration:6000;transition2d:5;\"><img loading=\"lazy\" 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role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Introduction<\/span><\/a><\/li>\n<li class='menu-item av-av_submenu_item-3762c67ab807f47fd80996be2a86bd89 menu-item-top-level menu-item-top-level-2' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/members'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Members<\/span><\/a><\/li>\n<li class='menu-item av-av_submenu_item-664aefac49ff25646967d270a040f9d0 menu-item-top-level menu-item-top-level-3' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Research<\/span><\/a><\/li>\n<li class='menu-item av-kbk05k-5c5944fac313107f26dddee0ba9e2d5b menu-item-top-level menu-item-top-level-4' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Other groups<\/span><\/a><\/li>\n<\/ul><\/div><\/div><div id='after_submenu_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-25907'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_heading-2b6ce235c79e407333087222f54ebdf8\">\n#top .av-special-heading.av-av_heading-2b6ce235c79e407333087222f54ebdf8{\npadding-bottom:10px;\n}\nbody .av-special-heading.av-av_heading-2b6ce235c79e407333087222f54ebdf8 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-av_heading-2b6ce235c79e407333087222f54ebdf8 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-av_heading-2b6ce235c79e407333087222f54ebdf8 av-special-heading-h3  avia-builder-el-2  el_after_av_submenu  el_before_av_textblock  avia-builder-el-first'><h3 class='av-special-heading-tag'  itemprop=\"headline\"  >New technological routes to improve thermal managements in GaN HEMTs<\/h3><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n<section  class='av_textblock_section av-jn4jsl4t-05c1de465a9c060257e999422db9ea88'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div class='avia_textblock'  itemprop=\"text\" ><p>For two years, a new activity was started concerning the improvement of thermal management in GaN HEMTs since performance and reliability are strongly linked to this phenomenon.<\/p>\n<p>The first approach concerns the use of free-standing GaN substrate allowing homoepitaxy of the active AlGaN\/GaN layers of HEMTs. The heat dissipation via the substrate is enhanced due to the absence of nucleation and strain adaptation layers which introduce thermal barrier. Technological process based on e-beam lithography was developed and first DC measurement was performed on AlGaN\/GaN HEMT with LG=300nm (fig. 5a) showing the potentiality of GaN substrate.<\/p>\n<p>The second approach address the thermal management improvement of HEMTs thanks to a layer transfer technology on high thermal conductive substrate such as diamond. For that, the HEMT epilayer growth on silicon substrate is followed by device fabrication and bonding onto host substrate after the removal of silicon growth substrate. Technological process is under development with success to remove silicon substrate with limiting cracks in GaN layer (fig. 5b). Different bonding techniques are under study.<\/p>\n<\/div><\/section>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-2g8c4c3-0cd000131c0140b43834b998bcd1946e\">\n.flex_column.av-2g8c4c3-0cd000131c0140b43834b998bcd1946e{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-2g8c4c3-0cd000131c0140b43834b998bcd1946e av_one_half  avia-builder-el-4  el_after_av_textblock  el_before_av_one_half  first flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-28p56ab-509014b271a57fb8d82fb3e4f4c2125b'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div class='avia_textblock'  itemprop=\"text\" ><div id=\"attachment_25913\" style=\"width: 613px\" class=\"wp-caption alignnone\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/technological_routes_fig5a.jpg\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-25913\" class=\"wp-image-25913 size-full\" title=\"Fig.5a: IDS(VDS) DC characteristics measured on 300nm gate length AlGaN\/GaN HEMT on GaN substrate\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/technological_routes_fig5a.jpg\" alt=\"Fig.5a: IDS(VDS) DC characteristics measured on 300nm gate length AlGaN\/GaN HEMT on GaN substrate\" width=\"603\" height=\"439\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/technological_routes_fig5a.jpg 603w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/technological_routes_fig5a-300x218.jpg 300w\" sizes=\"auto, (max-width: 603px) 100vw, 603px\" \/><\/a><p id=\"caption-attachment-25913\" class=\"wp-caption-text\">Fig.5a: IDS(VDS) DC characteristics measured on 300nm gate length AlGaN\/GaN HEMT on GaN substrate<\/p><\/div>\n<\/div><\/section><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-1r6tk4z-89a0843ddf6de63eaca19a224fd34f10\">\n.flex_column.av-1r6tk4z-89a0843ddf6de63eaca19a224fd34f10{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-1r6tk4z-89a0843ddf6de63eaca19a224fd34f10 av_one_half  avia-builder-el-6  el_after_av_one_half  el_before_av_textblock  flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-dndqr-201f490c5c99b2b4e59bb5e1e8084dd9'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div class='avia_textblock'  itemprop=\"text\" ><div id=\"attachment_25916\" style=\"width: 377px\" class=\"wp-caption alignnone\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/technological_routes_fig5b.png\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-25916\" class=\"wp-image-25916 size-full\" title=\"Fig.5b : backside view of AGaN\/GaN HEMT (through GaN layer) after silicon substrate removal\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/technological_routes_fig5b.png\" alt=\"Fig.5b : backside view of AGaN\/GaN HEMT (through GaN layer) after silicon substrate removal\" width=\"367\" height=\"199\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/technological_routes_fig5b.png 367w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/technological_routes_fig5b-300x163.png 300w\" sizes=\"auto, (max-width: 367px) 100vw, 367px\" \/><\/a><p id=\"caption-attachment-25916\" class=\"wp-caption-text\">Fig.5b : backside view of AGaN\/GaN HEMT (through GaN layer) after silicon substrate removal<\/p><\/div>\n<\/div><\/section><\/div>\n<section  class='av_textblock_section av-2qfiab-7c715db56cbaf9465c1b0f754c570991'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div class='avia_textblock'  itemprop=\"text\" ><p>In the future, components operating at very high frequency (E,W bands) will be studied in collaboration with III-V lab. InAlGaN\/GaN or AlN\/GaN epitaxies will be considered on SiC, GaN substrates or reported on diamond. For this purpose, non-alloy ohmic contacts and\/or self-aligned technologies will be carried out. The activity will be based on transistor processing, characterization and reliability tests for telecommunication applications.<\/p>\n<\/div><\/section>\n<div  class='av_promobox av-js09a3uo-95c6a6ac9fb24e9e4d24e2dec1561c1b avia-button-no  avia-builder-el-9  el_after_av_textblock  avia-builder-el-last'><div class='avia-promocontent'><p>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-46b4270e2aa10b934ea9f40492984a14\">\n.av_font_icon.av-av_font_icon-46b4270e2aa10b934ea9f40492984a14 .av-icon-char{\nfont-size:25px;\nline-height:25px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-46b4270e2aa10b934ea9f40492984a14 avia_animate_when_visible av-icon-style- avia-icon-pos-left av-no-color avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue87f' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/p>\n<p><strong>PUISSANCE Group : OTHER ACTIVITIES<\/strong><\/p>\n<ul>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/algan\/\">AlGaN\/GaN HEMT thermal modeling and characterization<\/a><\/li>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/measurement-above-110ghz\/\">Measurement above 110GHz<\/a><\/li>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/modelling-gan\/\">Modelling of GaN-HEMT for high efficiency power converters<\/a><\/li>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/nanoribbon\/\">Nanoribbon-channel AlGaN\/GaN HEMTs<\/a><\/li>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/power-performance\/\">Power performance at 40GHz of AlGaN\/GaN HEMTs on silicon substrate<\/a><\/li>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/temperature-monitoring\/\">Temperature monitoring of operating AlGaN\/GaN HEMTs<\/a><\/li>\n<\/ul>\n<p>\n<\/div><\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"parent":25963,"menu_order":30,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-25907","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25907","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=25907"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25907\/revisions"}],"up":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25963"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=25907"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}