{"id":25897,"date":"2018-10-11T13:57:08","date_gmt":"2018-10-11T11:57:08","guid":{"rendered":"https:\/\/www.iemn.fr\/?page_id=25897"},"modified":"2019-02-11T14:55:51","modified_gmt":"2019-02-11T12:55:51","slug":"nanoribbon","status":"publish","type":"page","link":"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/nanoribbon","title":{"rendered":"Nanoribbon-channel AlGaN\/GaN HEMTs"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_submenu  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_44_lfztvyj8pv3w\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"bgposition:50% 50%;duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" width=\"2600\" height=\"270\" 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role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Introduction<\/span><\/a><\/li>\n<li class='menu-item av-av_submenu_item-3762c67ab807f47fd80996be2a86bd89 menu-item-top-level menu-item-top-level-2' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/members'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Members<\/span><\/a><\/li>\n<li class='menu-item av-av_submenu_item-664aefac49ff25646967d270a040f9d0 menu-item-top-level menu-item-top-level-3' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Research<\/span><\/a><\/li>\n<li class='menu-item av-kbk05k-5c5944fac313107f26dddee0ba9e2d5b menu-item-top-level menu-item-top-level-4' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Other groups<\/span><\/a><\/li>\n<\/ul><\/div><\/div><div id='after_submenu_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-25897'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_heading-bad7351a2b571bfb9d7cd265074a0e44\">\n#top .av-special-heading.av-av_heading-bad7351a2b571bfb9d7cd265074a0e44{\npadding-bottom:10px;\n}\nbody .av-special-heading.av-av_heading-bad7351a2b571bfb9d7cd265074a0e44 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-av_heading-bad7351a2b571bfb9d7cd265074a0e44 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-av_heading-bad7351a2b571bfb9d7cd265074a0e44 av-special-heading-h3  avia-builder-el-2  el_after_av_submenu  el_before_av_textblock  avia-builder-el-first'><h3 class='av-special-heading-tag'  itemprop=\"headline\"  >Nanoribbon-channel AlGaN\/GaN HEMTs<\/h3><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n<section  class='av_textblock_section av-jn4j6bt3-a9bf6374ce25c28c3c3f0a093559a8b5'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div class='avia_textblock'  itemprop=\"text\" ><p>AlGaN\/GaN high electron mobility transistor (HEMT) with a nanoribbon (NR) channel design permits to improve the transconductance linearity, reduce on-resistance (RON) and increase drain current density (IDS). The objective is applications in microwave and logic circuits.<\/p>\n<p>The fabrication is based on top-down and bottom-up approaches. In the top-down process the nanoribbons consist of multiple parallel channels with nanoscales width made by etching (trigate structure) or by partial nitrogen ion-implantation isolation on the HEMT epitaxy. In the bottom-up approach, the nanoribbons are obtained by a localized regrowth of AlGaN\/GaN epitaxy by MOCVD on a GaN\/substrate after a resist deposition defining these nanoribbons.<\/p>\n<p>Devices with a gate length (Lg) of 300 nm and a source-to-drain spacing (LSD) of 5 \u03bcm were fabricated. A conventional device was also fabricated on the same epilayer for comparison. It is observed that the nanoribbons structure permits to reduce the access resistance, and thereby improve the device gm linearity. The electrical properties of the nanoribbon channel have been characterized by static measurement, and compared with similar conventional devices fabricated in close proximity of the epilayer. For a nanoribbon structure, it is observed an improvement of the current density compared with planar transistors. These results show the great potential of the planar nanoribbon GaN HEMT to be used in high linearity RF applications.<\/p>\n<\/div><\/section>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-2n7cgyx-3eef50bf0c3e14f59d6f944db3c4524e\">\n.flex_column.av-2n7cgyx-3eef50bf0c3e14f59d6f944db3c4524e{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-2n7cgyx-3eef50bf0c3e14f59d6f944db3c4524e av_one_half  avia-builder-el-4  el_after_av_textblock  el_before_av_one_half  first flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-28fqix5-5671d8d1c74a31e0563e04a6222c5989'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div class='avia_textblock'  itemprop=\"text\" ><div id=\"attachment_25900\" style=\"width: 677px\" class=\"wp-caption alignnone\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/nanoribbon_fig1.jpg\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-25900\" class=\"wp-image-25900 size-full\" title=\"Fig.1: SEM view of a NR transistor with a gate of 200nm obtained by etching (top-down process)\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/nanoribbon_fig1.jpg\" alt=\"Fig.1: SEM view of a NR transistor with a gate of 200nm obtained by etching (top-down process)\" width=\"667\" height=\"500\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/nanoribbon_fig1.jpg 667w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/nanoribbon_fig1-300x225.jpg 300w\" sizes=\"auto, (max-width: 667px) 100vw, 667px\" \/><\/a><p id=\"caption-attachment-25900\" class=\"wp-caption-text\">Fig.1: SEM view of a NR transistor with a gate of 200nm obtained by etching (top-down process)<\/p><\/div>\n<\/div><\/section><\/div>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-1qkunwp-76c4528f435157ec7584a7c931c91c67\">\n.flex_column.av-1qkunwp-76c4528f435157ec7584a7c931c91c67{\nborder-radius:0px 0px 0px 0px;\npadding:0px 0px 0px 0px;\n}\n<\/style>\n<div  class='flex_column av-1qkunwp-76c4528f435157ec7584a7c931c91c67 av_one_half  avia-builder-el-6  el_after_av_one_half  el_before_av_textblock  flex_column_div av-zero-column-padding  column-top-margin'     ><section  class='av_textblock_section av-1asmk5l-e18387912b3aabd36ea62c248244006f'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div class='avia_textblock'  itemprop=\"text\" ><div id=\"attachment_25903\" style=\"width: 536px\" class=\"wp-caption alignnone\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/nanoribbon_fig2.png\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-25903\" class=\"wp-image-25903 size-full\" title=\"Fig.2: Comparison of the drain\u2013current versus drain\u2013voltage characteristics of passivated (SiO2\/SiN = 150 nm) NR (trigate) and planar HEMTs fabricated on the same \" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/nanoribbon_fig2.png\" alt=\"Fig.2: Comparison of the drain\u2013current versus drain\u2013voltage characteristics of passivated (SiO2\/SiN = 150 nm) NR (trigate) and planar HEMTs fabricated on the same \" width=\"526\" height=\"388\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/nanoribbon_fig2.png 526w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/nanoribbon_fig2-300x221.png 300w\" sizes=\"auto, (max-width: 526px) 100vw, 526px\" \/><\/a><p id=\"caption-attachment-25903\" class=\"wp-caption-text\">Fig.2: Comparison of the drain\u2013current versus drain\u2013voltage characteristics of passivated (SiO2\/SiN = 150 nm) NR (trigate) and planar HEMTs fabricated on the same<\/p><\/div>\n<\/div><\/section><\/div>\n<section  class='av_textblock_section av-un6mrt-031a7516d46c44d3795ff1af5d8e0647'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div class='avia_textblock'  itemprop=\"text\" ><hr \/>\n<p><em>[1] BOUCHERTA M. et al, E-MRS 2018, Warsaw, Poland, September 2018.<\/em><\/p>\n<\/div><\/section>\n<div  class='av_promobox av-js09a3uo-95c6a6ac9fb24e9e4d24e2dec1561c1b avia-button-no  avia-builder-el-9  el_after_av_textblock  avia-builder-el-last'><div class='avia-promocontent'><p>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-av_font_icon-46b4270e2aa10b934ea9f40492984a14\">\n.av_font_icon.av-av_font_icon-46b4270e2aa10b934ea9f40492984a14 .av-icon-char{\nfont-size:25px;\nline-height:25px;\n}\n<\/style>\n<span  class='av_font_icon av-av_font_icon-46b4270e2aa10b934ea9f40492984a14 avia_animate_when_visible av-icon-style- avia-icon-pos-left av-no-color avia-icon-animate'><span class='av-icon-char' aria-hidden='true' data-av_icon='\ue87f' data-av_iconfont='entypo-fontello' ><\/span><\/span><\/p>\n<p><strong>PUISSANCE Group : OTHER ACTIVITIES<\/strong><\/p>\n<ul>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/algan\/\">AlGaN\/GaN HEMT thermal modeling and characterization<\/a><\/li>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/measurement-above-110ghz\/\">Measurement above 110GHz<\/a><\/li>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/modelling-gan\/\">Modelling of GaN-HEMT for high efficiency power converters<\/a><\/li>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/new-technological-routes\/\">New technological routes to improve thermal managements in GaN HEMTs<\/a><\/li>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/power-performance\/\">Power performance at 40GHz of AlGaN\/GaN HEMTs on silicon substrate<\/a><\/li>\n<li><a href=\"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-puissance\/research\/temperature-monitoring\/\">Temperature monitoring of operating AlGaN\/GaN HEMTs<\/a><\/li>\n<\/ul>\n<p>\n<\/div><\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"parent":25963,"menu_order":25,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-25897","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25897","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=25897"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25897\/revisions"}],"up":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25963"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=25897"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}