{"id":25631,"date":"2018-10-01T16:54:04","date_gmt":"2018-10-01T14:54:04","guid":{"rendered":"https:\/\/www.iemn.fr\/?page_id=25631"},"modified":"2024-09-17T14:40:00","modified_gmt":"2024-09-17T12:40:00","slug":"solid-state-thz-electronic-activities","status":"publish","type":"page","link":"https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-anode\/solid-state-thz-electronic-activities","title":{"rendered":"Solid State THz Electronic Activities"},"content":{"rendered":"<div id='layer_slider_1'  class='avia-layerslider main_color avia-shadow  avia-builder-el-0  el_before_av_submenu  avia-builder-el-first  container_wrap sidebar_right'  style='height: 261px;'  ><div id=\"layerslider_42_18btdawzx3x5n\" data-ls-slug=\"homepageslider\" class=\"ls-wp-container fitvidsignore ls-selectable\" style=\"width:1140px;height:260px;margin:0 auto;margin-bottom: 0px;\"><div class=\"ls-slide\" data-ls=\"bgposition:50% 50%;duration:6000;transition2d:5;\"><img loading=\"lazy\" decoding=\"async\" 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https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/sliders_groupe_anode-768x80.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/sliders_groupe_anode-1030x107.jpg 1030w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/sliders_groupe_anode-1500x156.jpg 1500w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/sliders_groupe_anode-705x73.jpg 705w\" sizes=\"auto, (max-width: 2600px) 100vw, 2600px\" \/><ls-layer style=\"font-size:14px;text-align:left;font-style:normal;text-decoration:none;text-transform:none;font-weight:700;letter-spacing:0px;background-position:0% 0%;background-repeat:no-repeat;mix-blend-mode:normal;top:231px;left:0px;height:30px;width:320px;line-height:32px;color:#ffffff;border-radius:6px 6px 6px 6px;padding-left:50px;background-color:rgba(0, 0, 0, 0.57);\" class=\"ls-l ls-ib-icon ls-text-layer\" data-ls=\"minfontsize:0;minmobilefontsize:0;\"><i class=\"fa fa-user-circle\" style=\"color:#f2f2f2;margin-right:0.8em;font-size:1em;transform:translateY( -0.125em );\"><\/i>GROUPE DE RECHERCHE : ANODE<\/ls-layer><\/div><\/div><\/div>\n<div id='sub_menu1'  class='av-submenu-container av-jrqfadqy-ce2f2ab09b07c9cd48b0b2cdd423b7d9 footer_color  avia-builder-el-1  el_after_av_layerslider  el_before_av_heading  submenu-not-first container_wrap sidebar_right' style='z-index:301' ><div class='container av-menu-mobile-disabled av-submenu-pos-left'><ul id='av-custom-submenu-1' class='av-subnav-menu' role='menu'>\n<li class='menu-item av-2nzbzl4-dd30c1a64892c4ee2e87157aeb7be687 menu-item-top-level menu-item-top-level-1' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-anode'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Introduction<\/span><\/a><\/li>\n<li class='menu-item av-2ae1ync-b4ed92654495626754e5d1f77699bf33 menu-item-top-level menu-item-top-level-2' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-anode\/team-members'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Members<\/span><\/a><\/li>\n<li class='menu-item av-1l5r25k-a6582f398e52e6499c6ec8b0e2214b82 menu-item-top-level menu-item-top-level-3' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-anode\/solid-state-thz-electronic-activities'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Solid State THz - Electronic activities<\/span><\/a><\/li>\n<li class='menu-item av-yr0pgo-286fde3b578cabc174447cd3c87ea6ad menu-item-top-level menu-item-top-level-4' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-anode\/ultra-low-power-biomimetic-sensors'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Ultra Low Power Biomimetic Sensors<\/span><\/a><\/li>\n<li class='menu-item av-vk8c14-3df87ecbbd9f0f3cf0410e55c33041b1 menu-item-top-level menu-item-top-level-5' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes\/groupe-anode\/nano-device-characterization'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Nano-Device Characterization<\/span><\/a><\/li>\n<li class='menu-item av-13o2vdr-27c56c10a20863da3e8490a276c34c61 menu-item-top-level menu-item-top-level-6' role='menuitem'><a href='https:\/\/www.iemn.fr\/en\/la-recherche\/les-groupes'  ><span class='avia-bullet'><\/span><span class='avia-menu-text'>Other groups<\/span><\/a><\/li>\n<\/ul><\/div><\/div><div id='after_submenu_1'  class='main_color av_default_container_wrap container_wrap sidebar_right'  ><div class='container av-section-cont-open' ><div class='template-page content  av-content-small alpha units'><div class='post-entry post-entry-type-page post-entry-25631'><div class='entry-content-wrapper clearfix'>\n\n<style type=\"text\/css\" data-created_by=\"avia_inline_auto\" id=\"style-css-av-mk1nr3-0a0abe9095a0cf9862cbb1a7a0247799\">\n#top .av-special-heading.av-mk1nr3-0a0abe9095a0cf9862cbb1a7a0247799{\npadding-bottom:10px;\n}\nbody .av-special-heading.av-mk1nr3-0a0abe9095a0cf9862cbb1a7a0247799 .av-special-heading-tag .heading-char{\nfont-size:25px;\n}\n.av-special-heading.av-mk1nr3-0a0abe9095a0cf9862cbb1a7a0247799 .av-subheading{\nfont-size:15px;\n}\n<\/style>\n<div  class='av-special-heading av-mk1nr3-0a0abe9095a0cf9862cbb1a7a0247799 av-special-heading-h2  avia-builder-el-2  el_after_av_submenu  el_before_av_textblock  avia-builder-el-first'><h2 class='av-special-heading-tag'  itemprop=\"headline\"  >Solid State THz Electronic Activities<\/h2><div class=\"special-heading-border\"><div class=\"special-heading-inner-border\"><\/div><\/div><\/div>\n<section  class='av_textblock_section av-jmqf36f4-dd9e857a9ec63da1443fe5fef10d685e'   itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div class='avia_textblock'  itemprop=\"text\" ><p>According to the Copper's Law, wireless communication systems capacities have doubled every 30 months since 1900 and with a clear accelerated rhythm these last three decades where the capacity has doubled every 18 months. Needs and new services cover as of now many new aspects of our lives, as a result needs and exigencies are huge. THz solid state components whatever the functionality... amplification, detection, generation, systems... Whatever the device... transistor, diode, photodiode are in the centre of the future challenges. Anode group through its competencies in III-V technologies responds, faces, to this challenge.<\/p>\n<\/div><\/section>\n<div  class='togglecontainer av-m16f3qqr-830ced06222b85b4ab732cf03f9c8753  avia-builder-el-4  el_after_av_textblock  avia-builder-el-last  toggle_close_all' >\n<section class='av_toggle_section av-av_toggle-08e3d869b67ccb31ebf9a15805b30f16'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-1' data-fake-id='#toggle-id-1' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-1' data-slide-speed=\"200\" data-title=\"THz High Electron Mobility and Heterojunction Bipolar Transistor\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: THz High Electron Mobility and Heterojunction Bipolar Transistor\" data-aria_expanded=\"Click to collapse: THz High Electron Mobility and Heterojunction Bipolar Transistor\">THz High Electron Mobility and Heterojunction Bipolar Transistor<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-1' aria-labelledby='toggle-toggle-id-1' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p>III-V technologies on InP substrate, making use of Indium and Gallium alloys, have shown their capabilities for high performance electronic and photonic applications, by demonstration of their superiority for high-speed communication and sensing. These excellent performances are related to the high mobility of III-V materials and possibilities of energy band engineering. This technology is considered for the next mobile network 6G where a high bit data rate of 100Gbit\/s is targeted and is also at the heart of many THz devices. This data rate increase is mandatory to meet the growing demand from remote work, online education, shopping, entertainment, and recently by Internet of Things (IoT) needs. Indeed, the IOT will require the deployment of connected objects, whose number is expected to increase from 30 billions in 2020 to 100 billions in 2050. This is in this framework Anode group develops THz Transistors. The objective is to obtain maximum oscillation frequency F<sub>MAX<\/sub> beyond 1THz and to develop tools for measurements of this frequency. Preliminary result reports a F<sub>MAX<\/sub> around 1 THz on an InP-HEMT. Specific on wafer S-parameters characterizations were developed using multiline-TRL calibration technique up to 1.1THz.<\/p>\n<p>Concerning the HBT (Fig. 2), on an InP\/InGaAs structure grown in InP substrate with a device area of 0.2\u00d72.6\u00a0\u00b5m<sup>2<\/sup>the achieved performances are a F<sub>T<\/sub> of 350 GHz and F<sub>MAX<\/sub> of 650 GHz. In power at 94 GHz, this device delivered an output power of 12 dBm and P.A.E of 30%.<\/p>\n<p><div id=\"attachment_25634\" style=\"width: 410px\" class=\"wp-caption aligncenter\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig1_substrate.jpg\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-25634\" class=\"wp-image-25634\" title=\"Fig. 1: 75 nm LG - AlInAs\/InGaAs HEMT on InP Substrate\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig1_substrate.jpg\" alt=\"Fig. 1: 75 nm LG - AlInAs\/InGaAs HEMT on InP Substrate\" width=\"400\" height=\"355\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig1_substrate.jpg 400w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig1_substrate-300x266.jpg 300w\" sizes=\"auto, (max-width: 400px) 100vw, 400px\" \/><\/a><p id=\"caption-attachment-25634\" class=\"wp-caption-text\">Fig. 1: 75 nm LG - AlInAs\/InGaAs HEMT on InP Substrate<\/p><\/div><br \/>\n<div id=\"attachment_25638\" style=\"width: 410px\" class=\"wp-caption aligncenter\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig2_substrate-1.png\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-25638\" class=\"wp-image-25638\" title=\"Fig. 2: InP\/InGaAs HBT on InP Substrate.\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig2_substrate-1.png\" alt=\"Fig. 2: InP\/InGaAs HBT on InP Substrate.\" width=\"400\" height=\"299\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig2_substrate-1.png 692w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig2_substrate-1-300x224.png 300w\" sizes=\"auto, (max-width: 400px) 100vw, 400px\" \/><\/a><p id=\"caption-attachment-25638\" class=\"wp-caption-text\">Fig. 2: InP\/InGaAs HBT on InP Substrate.<\/p><\/div><\/p>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-m16f34m3-dd122e941ca923e76bd8c6b1afbbc021'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-2' data-fake-id='#toggle-id-2' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-2' data-slide-speed=\"200\" data-title=\"GaN Schottky diode for THz generation\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: GaN Schottky diode for THz generation\" data-aria_expanded=\"Click to collapse: GaN Schottky diode for THz generation\">GaN Schottky diode for THz generation<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-2' aria-labelledby='toggle-toggle-id-2' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p>Frequency multipliers are solid-state devices widely used for signal generation in the millimeter wave range up to several THz. These sources rely mainly on the non-linear voltage-capacitance characteristic of a varactor diode. Traditionally, GaAs-based has been the cornerstone for producing these diodes dedicated to frequency multiplication.<\/p>\n<p>However, recent advancements in III-Nitride (GaN) technology present compelling opportunities for enhancing the performance of frequency multipliers. GaN\u2019s wider bandgap and higher breakdown voltage offer inherent advantages over GaAs, promising significantly higher output power\u2014potentially surpassing current state-of-the-art GaAs devices by an order of magnitude.<\/p>\n<p>We have collaborated with the University of Darmstadt, jointly supervising PhD student Chong Jin under the guidance of Prof. Dimitri Pavlidis. This collaboration has been instrumental in advancing our understanding and capabilities in GaN-based frequency multipliers.<\/p>\n<p>Furthermore, our group has successfully secured funding from the French National Research Agency (ANR) for the SchoGaN project (2017-2022). This project focuses on developing GaN Schottky diodes tailored for THz generation. Currently, in collaboration with LERMA-Observatoire de Paris, our goal is to develop a GaN-based radiometer capable of studying the atmosphere of Venus under extreme conditions, such as temperatures up to 500\u00b0C.<\/p>\n<p>Through these initiatives, we aim to leverage the superior material properties of GaN to push the boundaries of high-frequency and high-power signal generation, contributing to both fundamental research and practical applications in THz technology.<\/p>\n<div id=\"attachment_70895\" style=\"width: 410px\" class=\"wp-caption aligncenter\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/09\/22071807.jpg\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-70895\" class=\"wp-image-70895\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/09\/22071807-495x400.jpg\" alt=\"\" width=\"400\" height=\"300\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/09\/22071807-300x225.jpg 300w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/09\/22071807-768x576.jpg 768w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/09\/22071807-16x12.jpg 16w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/09\/22071807-705x529.jpg 705w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2024\/09\/22071807.jpg 1024w\" sizes=\"auto, (max-width: 400px) 100vw, 400px\" \/><\/a><p id=\"caption-attachment-70895\" class=\"wp-caption-text\">GaN Schottky diode<\/p><\/div>\n<\/div><\/div><\/div><\/section>\n<section class='av_toggle_section av-av_toggle-5910d1261dbacaaf44582610925b4307'  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/CreativeWork\" ><div role=\"tablist\" class=\"single_toggle\" data-tags=\"{All} \"  ><p id='toggle-toggle-id-3' data-fake-id='#toggle-id-3' class='toggler  av-title-above'  itemprop=\"headline\"  role='tab' tabindex='0' aria-controls='toggle-id-3' data-slide-speed=\"200\" data-title=\"UTC for THz generation\" data-title-open=\"\" data-aria_collapsed=\"Click to expand: UTC for THz generation\" data-aria_expanded=\"Click to collapse: UTC for THz generation\">UTC for THz generation<span class=\"toggle_icon\"><span class=\"vert_icon\"><\/span><span class=\"hor_icon\"><\/span><\/span><\/p><div id='toggle-id-3' aria-labelledby='toggle-toggle-id-3' role='region' class='toggle_wrap  av-title-above'  ><div class='toggle_content invers-color'  itemprop=\"text\" ><p>In the framework of an IEMN internal collaboration with Photonique THz group, Anode group co-supervises PhD students since 2004. The scope of this activity concerns the generation of terahertz signals. The part of the electromagnetic spectrum - 100 GHz at 10 THz - is sorely lacking in compact, efficient and powerful sources. One possible way is the use of fast nano-photonics. UTC (Uni-Travelling Carrier) photodiode is a PIN-type diode where the optical absorption and the transport of the photo-carriers occur in two distinct zones, a p-type zone and an intrinsic-type zone. Photo-generated electrons in the p region diffuse to the intrinsic zone for collection. The technology of this device comes from that optimized for the HBT. Anode group has co-supervised a second and a third thesis and have been defended by F. Pavanello and P. Latzel.<\/p>\n<p>Many technological aspects have been optimized (ohmic contacts, top metal contact, etchings). In particular, an original solution based on the concept of extraordinary transmission (Fig. 4) has been developed and allows a lighting from the top, well easier to perform. An RF power of 2 mW at 50 GHz and 400 \u03bcW at 300 GHz was measured on UTC-PD of 6 and 3 \u03bcm side. In addition, the state of the art in optical efficiency with 0.2% was reached at 300 GHz. In order to increase generated power, a transferred UTC process on a high resistivity silicon substrate has been developed to ensure a better heat dissipation. A strong performance improvement at 300 GHz was reported with 700 \u03bcW and an optical efficiency of 0.76%. This shared activity continues today through several ANR contracts and industrial collaborations (Rohde &amp; Schwarz and RP GmbH). Our UTC is used for THz wireless telecommunication applications. Thus, in indoor, we have demonstrated for the first time of single channel 100 Gbit\/s THz transmission in QAM- 16 modulation format. A fourth thesis is ongoing. The subject is \u00ab\u00a0300 GHz signal generation for Wireless THz telecommunication\u00a0\u00bb. It is supported by DGA.<\/p>\n<div id=\"attachment_25649\" style=\"width: 650px\" class=\"wp-caption aligncenter\"><a href=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig4_photodiode-1.png\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-25649\" class=\"wp-image-25649 size-full\" title=\"Fig. 4: UTC photodiode fabricated on InP substrate.\" src=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig4_photodiode-1.png\" alt=\"Fig. 4: UTC photodiode fabricated on InP substrate.\" width=\"640\" height=\"435\" srcset=\"https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig4_photodiode-1.png 640w, https:\/\/www.iemn.fr\/wp-content\/uploads\/2018\/10\/anode_-fig4_photodiode-1-300x204.png 300w\" sizes=\"auto, (max-width: 640px) 100vw, 640px\" \/><\/a><p id=\"caption-attachment-25649\" class=\"wp-caption-text\">Fig. 4: UTC photodiode fabricated on InP substrate.<\/p><\/div>\n<\/div><\/div><\/div><\/section>\n<\/div>","protected":false},"excerpt":{"rendered":"","protected":false},"author":2,"featured_media":0,"parent":25623,"menu_order":10,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"class_list":["post-25631","page","type-page","status-publish","hentry"],"_links":{"self":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25631","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/comments?post=25631"}],"version-history":[{"count":0,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25631\/revisions"}],"up":[{"embeddable":true,"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/pages\/25623"}],"wp:attachment":[{"href":"https:\/\/www.iemn.fr\/en\/wp-json\/wp\/v2\/media?parent=25631"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}