Projet ANR –

Analyseur de signaux intégré sur sonde coplanaire pour composants millimètriques et THz

The aim of the GOSPELS project is to design and demonstrate a new vertical power diode in p-MgNiO/n-AlGa2O3, optimized for power electronics. This will require the design and development of devices with appropriate architectures and controlled thermal, electrical and structural properties for layers and interfaces. The ambition and innovative nature of the GOSPELS project are linked both to the fundamental exploration of the emerging semiconductor potential of these oxide materials and to the demonstration of a vertical power device (Al)Ga2O3/(Mg)NiO, obtained by PLD (Pulsed Laser Deposition). Thermal management will be achieved by transferring the device layer to a heat sink using laser lift-off. This project brings together partners who are international benchmarks in their fields of expertise. It will be based on optimization loops between modeling, material, manufacturing process and characterization within the consortium, in order to progressively/rapidly resolve technological barriers and enable the manufacture of Ga2O3 power devices for the first time in France.


Institut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN

Coordinateur : Nicolas Defrance

Responsable scientifique : Dave Rogers

Responsable scientifique : Henri Jaffres

Responsable scientifique : Antonino Alessi

Responsable scientifique : Stefan Kubsky

Recently published by partner IEMN