Physics of electron g-factors in semiconductor nanostructures
The manipulation of the electron spin in semiconductor nanostructures requires the knowledge of the electron g-factor. In this work, we revisit the physics of the electron g-factor in nanostructures of various shape, size, dimensionality (0D-3D) and composition. Our investigation is based on a combination of atomistic and analytical calculations.
Athmane Tadjine (doctorant dans le groupe physique)
Salle du conseil, mardi 16 novembre 2017, 14h00.
We show that, for a given compound, the electron g-factors follow a universal law that just depends on the energy gap, in particular along rotational symmetry axes. We demonstrate that the orbital magnetic moment density strongly depends on the shape of the nanostructure but the total (integrated) magnetic moment is independent of the shape and therefore of the electron envelope wavefunction. The physical origin of this non-trivial behavior is explained.
We deduce that the bulk component of the g-factor is isotropic and that g-factor anisotropies entirely come from surface effects.
Athmane Tadjine (1), Yann-Michel Niquet (2), and Christophe Delerue (1)
1 Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520-IEMN,F-59000 Lille, nFrance
2 Université Grenoble Alpes, INAC-MEM, L Sim, Grenoble, France and CEA, INAC-MEM, L Sim, 38000 Grenoble, France
Reference: A. Tadjine, Y.-M. Niquet, and C. Delerue, Phys. Rev. B 95, 235437 (2017).